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S. A. Studenikin

Publications and source records attributed to S. A. Studenikin.

At least 19 recordsLinked to original sources

Magnetotransport Spectroscopy of Strongly Rashba-Split Hole Subbands Reveals Many-Body Interactions

We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG densities (from 0.7 $\times$ 10$^{15}$/m$^2$ to $2 \times 10^{15}$/m$^2$), Fourier analysis of low-field (B < 1 T) Shubnikov-de Haas oscillations reveals two spin-orbit-split heavy-hole (HH) subbands with distinct effective masses contributing to transport. Surprisingly, the lighter-mass HH subband exhibits a parabolic dispersion with Fermi wavevector below the anticrossing between the heavy-hole and light-hole subbands, while the heavier HH subband is non-parabolic throughout. Quantitative comparison with numerical calculations based on the Luttinger model reveals that both effective masses are enhanced by a common factor ($\approx$ 2.3), which we attribute to many-body interactions. This common scaling factor has a very weak dependence on the 2DHG density, likely due to band hybridization. Our measured hole masses are compared with published cyclotron resonance and magnetotransport values. We propose a cohesive framework reconciling the long-standing three-way discrepancy between Luttinger theory, magnetotransport, and cyclotron resonance measurements of density-dependent effective masses in partially spin-orbit-polarized heavy-hole systems in GaAs.

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Enhanced effective masses, spin-orbit polarization, and dispersion relations in 2D hole gases under strongly asymmetric confinement

The dispersion of Rashba-split heavy-hole subbands in GaAs two-dimensional hole gases (2DHGs) is difficult to access experimentally because strong heavy-hole-light-hole mixing produces non-parabolicity and breaks the usual correspondence between carrier density and Fermi wave vector. Here we use low-field magnetotransport (B < 1 T) to reconstruct the dispersions of the two spin-orbit-split heavy-hole branches (HH-, HH+) in undoped (100) GaAs/AlGaAs single heterojunction 2DHGs operated in an accumulation-mode field-effect geometry. The dopant-free devices sustain out-of-plane electric fields up to 26 kV/cm while maintaining mobilities up to 84 m$^2$/Vs and exhibiting a spin-orbit polarization as large as 36%. Fourier analysis of Shubnikov-de Haas (SdH) oscillations resolves the individual HH-/HH+ subband densities; fitting the temperature dependence of the corresponding Fourier amplitudes yields both branch-resolved SdH effective masses over the same magnetic field window. SdH regimes in which reliable subband parameters can be extracted are delineated. Over 2DHG densities (0.76-1.9) $\times$ 10$^{15}$ /m$^2$, the HH- mass is nearly density independent ($\approx 0.34m_e$), implying a near-parabolic HH- dispersion below the first LH+/HH- anticrossing, whereas HH+ exhibits strong non-parabolicity with an effective mass that increases with density. Combining the extracted dispersions yields a transport-based determination of the spin-orbit splitting energy $Δ_\text{HH}$ between HH and HH+ as a function of in-plane wave vector. Parameter-free Luttinger-model calculations reproduce the qualitative trends but underestimate both masses by a common factor $\approx$ 2, suggesting a many-body renormalization of the heavy-hole mass in this strongly asymmetric regime.

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Resonant Magneto-phonon Emission by Supersonic Electrons in Ultra-high Mobility Two-dimensional System

We investigate resonant acoustic phonon scattering in the magneto-resistivity of an ultra-high mobility two-dimensional electron gas system subject to DC current in the temperature range 10 mK to 3.9 K. For a DC current density of $\sim$1.1 A/m, the induced carrier drift velocity $v_{drift}$ becomes equal to the speed of sound $s \sim$ 3 km/s. When $v_{drift} \gtrsim s$ very strong resonant features with only weak temperature dependence are observed and identified as phonon-induced resistance oscillations at and above the "sound barrier". Their behavior contrasts with that in the subsonic regime ($v_{drift} < s$) where resonant acoustic phonon scattering is strongly suppressed when the temperature is reduced unless amplified with quasi-elastic inter-Landau-level scattering. Our observations are compared to recent theoretical predictions from which we can extract a dimensionless electron-phonon coupling constant of $g^{2}$=0.0016 for the strong non-linear transport regime. We find evidence for a predicted oscillation phase change ' effect on traversing the "sound barrier". Crossing the "sound barrier" fundamentally alters the resulting phonon emission processes, and the applied magnetic field results in pronounced and sharp resonant phonon emission due to Landau level quantization.

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Controllable single spin evolution at sub-harmonics of electric dipole spin resonance enhanced by four-level Landau-Zener-St{ü}ckelberg-Majorana interference

Sub-harmonics of electric dipole spin resonance (EDSR) mediated by Landau-Zener-St{ü}ckelberg-Majorana (LZSM) tunneling transitions are studied numerically and analytically in a Zeeman-split four level system with strong spin-orbit coupling that can be realized, for example, in a GaAs-based double quantum dot in a single-hole regime. The spin qubit is formed in one of the dots and the second dot is used as an auxiliary element to enhance functionality of the spin qubit. In particular, it is found that the spin rotation rate can be essentially enhanced due to the tunnel coupling with the auxiliary dot on both the main EDSR frequency and at its high sub-harmonics allowing the coherent spin $π$-rotations on a 10-ns time scale. Spin manipulation on high sub-harmonics is promising for new time-efficient schemes of the spin control and readout in qubit devices operating at high magnetic fields where the main harmonic is inaccessible due to hardware limitations.

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Single spin Landau-Zener-Stückelberg-Majorana interferometry of Zeeman-split states with strong spin-orbit interaction in a double quantum dot

Single spin state evolution induced by the Landau-Zener-Stückelberg-Majorana (LZSM) interference in a Zeeman-spit four level system in a periodically driven double quantum dot is studied theoretically by the Floquet stroboscopic method. An interplay between spin-conserving and spin-flip tunneling processes with the Electric Dipole Spin Resonance (EDSR) that is induced in an individual dot and enhanced by the LZSM multiple level crossings with the neighboring quantum dot is investigated as a function of the microwave (MW) frequency, driving amplitude, interdot detuning, and magnetic field. A number of special points in the parameter space are identified, out of which where all the three features are merged. Under this triple-crossing resonance condition the interdot tunneling is combined with a fast spin evolution in each dot at the EDSR frequency. Harmonics of the EDSR are revealed in the spin-dependent tunneling maps versus variable magnetic field and MW frequency. The results are applicable for both electron and hole systems with strong spin-orbit interaction and may be useful for developing new time-efficient schemes of the spin control and readout in qubit devices.

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Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.

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Microwave Photoresistance in an Ultrahigh Quality GaAs Quantum Well

The temperature dependence of microwave-induced resistance oscillations (MIRO), according to the theory, originates from electron-electron scattering. This scattering affects both the quantum lifetime, or the density of states, and the inelastic lifetime, which governs the relaxation of the nonequilibrium distribution function. Here, we report on MIRO in an ultrahigh mobility ($μ> 3 \times 10^7$ cm$^2$/Vs) 2D electron gas at $T$ between $0.3$ K and $1.8$ K. In contrast to theoretical predictions, the quantum lifetime is found to be $T$-independent in the whole temperature range studied. At the same time, the $T$-dependence of the inelastic lifetime is much \emph{stronger} than can be expected from electron-electron interactions.

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The visibility study of S-T$_+$ Landau-Zener-Stückelberg oscillations without applied initialization

Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not initializing the system between measurements. For this we utilize Landau-Zener-Stückelberg oscillations in a double quantum dot circuit. Experimental results are successfully compared to theoretical simulations.

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Long-range spin transfer in triple quantum dots

Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hopping between distant sites is possible via the virtual occupation of otherwise avoided intermediate states. Here we report the observation of long range transitions in the transport through three quantum dots coupled in series. A single electron is delocalized between the left and right quantum dots while the centre one remains always empty. Superpositions are formed and both charge and spin are exchanged between the outermost dots. Detection of the process is achieved via the observation of narrow resonances, insensitive to the transport Pauli spin blockade.

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Bipolar spin blockade and coherent state superpositions in a triple quantum dot

Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. Currently more complex spin qubit circuits including triple quantum dots are being developed. Here we show both experimentally and theoretically (a) that in a linear triple quantum dot circuit, the spin blockade becomes bipolar with current strongly suppressed in both bias directions and (b) that a new quantum coherent mechanism becomes relevant. Within this mechanism charge is transferred non-intuitively via coherent states from one end of the linear triple dot circuit to the other without involving the centre site. Our results have implications in future complex nano-spintronic circuits.

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Coherent control of three-spin states in a triple quantum dot

Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electrical operation, efficient spin busing across a quantum circuit, and to enable quantum error correction utilizing the three-spin Greenberger-Horn-Zeilinger quantum state. Towards these goals we demonstrate for the first time coherent manipulation between two interacting three-spin states. We employ the Landau-Zener-Stückelberg approach for creating and manipulating coherent superpositions of quantum states. We confirm that we are able to maintain coherence when decreasing the exchange coupling of one spin with another while simultaneously increasing its coupling with the third. Such control of pairwise exchange is a requirement of most spin qubit architectures but has not been previously demonstrated.

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Quantum interference and phonon-mediated back-action in lateral quantum dot circuits

Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure.

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Microwave-induced resistance oscillations in tilted magnetic fields

We have studied the effect of an in-plane magnetic field on microwave-induced resistance oscillations in a high mobility two-dimensional electron system. We have found that the oscillation amplitude decays exponentially with an in-plane component of the magnetic field $B_\parallel$. While these findings cannot be accounted for by existing theories, our analysis suggests that the decay can be explained by a $B_\parallel$-induced correction to the quantum scattering rate, which is quadratic in $B_\parallel$.

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Non-linear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs

This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance $r_{xx}=dV_{xx}/dI$ of high-mobility InGaAs/InP and GaAs/AlGaAs Hall bar samples driven by direct current, $\Idc$. Specifically, it is observed that Shubnikov -de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of $\Idc$. This phase inversion is explained as being due to an electron heating effect. In the quantum Hall effect regime the $r_{xx}$ oscillations transform into diamond-shaped patterns with different slopes corresponding to odd and even filling factors. The diamond-shaped features at odd filling factors can be used as a probe to determine spin energy gaps. A Zero Current Anomaly (ZCA) which manifests itself as a narrow dip in the $r_{xx}(\Idc)$ characteristics at zero current, is also observed. The ZCA effect strongly depends upon temperature, vanishing above 1 K while the transport diamonds persist to higher temperatures. The transport diamonds and ZCA are fully reproduced in a higher mobility GaAs/AlGaAs Hall bar structure confirming that these phenomena reflect intrinsic properties of two-dimensional systems.

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Enhanced charge detection of spin qubit readout via an intermediate state

We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this letter we apply this scheme to demonstrate a significant enhancement of the fringe contrast of coherent Landau-Zener-Stuckleberg oscillations between singlet S and triplet T+ two-spin states.

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Quantum interference between three two-spin states in a double quantum dot

Qubits based on the singlet (S) and the triplet (T0, T+) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling which confirm these theoretical predictions and identify the conditions under which this interference occurs. Density matrix calculations show that the interference pattern manifests primarily via the occupation of the common singlet state. The S/T0 qubit is found to have a much longer coherence time as compared to the S/T+ qubit.

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Few-electron quantum dots in III-V ternary alloys: role of fluctuations

We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For the InAsP quantum well, an incidental triple quantum dot forms also due to potential fluctuations within a single dot layout. Tunable quadruple points are observed via transport measurements.

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The 3D transport diagram of a triple quantum dot

We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple quantum dot circuit is only possible at six quadruple point locations. The results are consistent with an equivalent circuit model.

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