arXiv subjects

S. A. Tarasenko

Publications and source records attributed to S. A. Tarasenko.

At least 73 records · Page 4Linked to original sources

arXiv2011

Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems

We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical excitation produces holes, which lead to a decay of electron spin via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized electrons. By scanning the distance between the pump and probe beams, we observe the diffusion of spin-polarized electrons over more than 20 microns. For high pump intensity, the spin polarization in a distance of several microns from the pump beam is larger than at the pump spot, due to the reduced influence of photogenerated holes.

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arXiv2011

Weak localization of Dirac fermions in graphene beyond the diffusion regime

We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the weak localization in graphene and conducting surfaces of bulk topological insulators.

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arXiv2011

Spin-orbit Hanle effect in high-mobility quantum wells

We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is described by a Lorentzian with the width determined by the effective g-factor and the spin lifetime. In contrast, the magnetic field dependence of spin polarization in high-mobility quantum wells is nonmonotonic: The spin polarization rises with the magnetic field induction at small fields, reaches maximum and then decreases. We show that the position of the Hanle curve maximum can be used to directly measure the spin-orbit Rashba/Dresselhaus magnetic field.

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arXiv2010

Valley-Orbit Photocurrents in (111)-oriented Si-MOSFETs

We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, in this work by applying linearly polarized radiation as well as by introducing a nonequivalence of the valleys by disorientation, we approve that the pure valley currents can be converted into a measurable electric current.

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arXiv2010

Direct current driven by ac electric field in quantum wells

It is shown that the excitation of charge carriers by ac electric field with zero average driving leads to a direct electric current in quantum well structures. The current emerges for both linear and circular polarization of the ac electric field and depends on the field polarization and frequency. We present a micoscopic model and an analytical theory of such a nonlinear electron transport in quantum wells with structure inversion asymmetry. In such systems, dc current is induced by ac electric field which has both the in-plane and out-of-plane components. The ac field polarized in the interface plane gives rise to a direct current if the quantum well is subjected to an in-plane static magnetic field.

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arXiv2010

Circular ac Hall Effect

We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency.

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arXiv2010

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.

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arXiv2010

Photon helicity driven electric currents in graphene

We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We demonstrate that under oblique incidence the current is caused by the circular photon drag effect in the interior of graphene sheet. By contrast, the effect at normal incidence stems from the sample edges, which reduce the symmetry and result in an asymmetric scattering of carriers driven by the radiation field. Besides a photon helicity dependent current we also observe photocurrents in response to linearly polarized radiation. The microscopic mechanisms governing this effect are discussed.

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arXiv2009

Orbital photogalvanic effects in quantum-confined structures

We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.

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arXiv2009

Spin relaxation of conduction electrons in (110)-grown quantum wells

The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along the growth direction is characterized by two different lifetimes and leads to the appearance of an in-plane spin component. The magnitude and sign of the in-plane component are determined by the structure inversion asymmetry of the quantum well and can be tuned by the gate voltage. In an external magnetic field, the interplay of cyclotron motion of carriers and the Larmor precession of electron spin can result in a nonmonotonic dependence of the spin density on the magnetic field.

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arXiv2009

Nonlinear magneto-gyrotropic photogalvanic effect

We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models.

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arXiv2009

Conversion of hole states by acoustic solitons

The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence band splitting by local elastic strain. The conversion is studied here for heavy holes localized at shallow and deep acceptors in silicon quantum wells.

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arXiv2009

Magneto-gyrotropic photogalvanic effect and spin dephasing in (110)-grown GaAs/AlGaAs quantum well structures

We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of the delta-doping layer positions. For the in-plane magnetic field the photocurrent is only observed in asymmetric structures but vanishes in symmetrically doped QWs. Applying time-resolved Kerr rotation and polarized luminescence we investigate the spin relaxation in QWs for various excitation levels. Our data confirm that in symmetrically doped QWs the spin relaxation time is maximal, therefore, these structures set the upper limit of spin dephasing in GaAs/AlGaAs QWs.

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arXiv2009

Spin currents in diluted magnetic semiconductors (extended version)

Spin currents resulting in the zero-bias spin separation have been observed in unbiased diluted magnetic semiconductor structures (Cd,Mn)Te/(Cd,Mg)Te. The pure spin current generated due to the electron gas heating by terahertz radiation is converted into a net electric current by application of an external magnetic field. We demonstrate that polarization of the magnetic ion system enhances drastically the conversion due to the spin-dependent scattering by localized Mn(2+) ions and the giant Zeeman splitting.

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arXiv2008

Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs

We report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstrates that the circular photogalvanic effect in Si structures it is of pure orbital nature originating from the quantum interference of different pathways contributing to the light absorption.

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arXiv2008

Pure spin photocurrents

The pure spin currents, i.e., the counterflow of particles with opposite spin orientations, can be optically injected in semiconductors. Here, we develop a phenomenological theory, which describes the polarization dependencies of spin currents excited by linearly polarized light in bulk semiconductors and quantum well structures of various symmetries. We present microscopic descriptions of the pure spin photocurrents for interband optical transitions in undoped quantum wells as well as for direct intersubband and indirect intrasubband (Drude-like) transitions in n-doped quantum well structures. We also demonstrate that pure spin currents can be generated in structures of sufficiently low symmetries by simple electron gas heating. The theoretical results are compared with recent experimental observations.

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arXiv2008

Thermal orientation of electron spins

It is shown that the spin orientation of free electrons occurs in low-symmetry semiconductor structures if only the electron gas is driven out of thermal equilibrium with the crystal lattice. The proposed mechanism of such a thermal orientation of electron spins is based on spin dependence of the electron-phonon interaction which tends to restore equilibrium. The microscopic theory of the effect is developed here for asymmetric (110)-grown quantum wells where the electron gas heating leads to the spin orientation along the [1-10] axis in the quantum well plane.

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arXiv2007

Symmetry and spin dephasing in (110)-grown quantum wells

Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer position.

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