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S. Aloni

Publications and source records attributed to S. Aloni.

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Low-Gap Hf-HfOx-Hf Josephson Junctions for meV-Scale Particle Detection

Superconducting qubits have motivated the exploration of Josephson-junction technologies beyond quantum computing, with emerging applications in low-energy photon and phonon detection for astrophysics and dark matter searches. Achieving sensitivity at the THz (meV) scale requires materials with smaller superconducting gaps than those of conventional aluminum or niobium-based devices. Here, we report the fabrication and characterization of hafnium (Hf)-based Josephson junctions (Hf-HfOx-Hf), demonstrating Hf as a promising low-Tc material platform for ultra-low threshold single THz photon and single-phonon detection. Structural and chemical analyses reveal crystalline films and well-defined oxide barriers, while electrical transport measurements at both room and cryogenic temperatures exhibit clear Josephson behavior, enabling extraction of key junction parameters such as critical current, superconducting gap and normal-state resistance. This work presents the first comprehensive study of Hf-based junctions and their potential for next-generation superconducting detectors and qubit architectures leveraging low superconducting gap energies.

cond-mat.supr-con

Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

We exposed nitrogen-implanted diamonds to beams of swift uranium and gold ions (~1 GeV) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV- centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV- yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV-center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions enable the formation of three dimensional NV- assemblies over relatively large distances of tens of micrometers. Further, our results show that NV-center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.

cond-mat.mtrl-sci