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S. Auffret

Publications and source records attributed to S. Auffret.

At least 19 recordsLinked to original sources

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall

Perpendicularly magnetized Tb/Co multilayers featuring tilted uniaxial anisotropy: Experiments and modeling

Rare earth/transition metal (RE/TM) multilayers with perpendicular magnetic anisotropy are key ingredients for the development of spintronic applications. Their compensation temperature depends on the ratio of the thicknesses of rare earth and transition metal, allowing their magnetic properties to be tuned with temperature while maintaining their anisotropy even in nanometer-scale devices. In this work, we performed a thorough structural characterization and systematically investigate the magnetic properties of a whole family of ferrimagnetic [Tb/Co]$_{\times 5}$ multilayers varying the Tb thickness in the range of 0.4 nm - 1.25 nm. A linear dependence of the compensation temperature on the Tb layer thickness was observed. Moreover, a uniaxial anisotropy constant of 330$\pm$30 kJ/m$^3$, which is close to the values reported by other authors, was estimated. Additionally, we proposed a model to gain a better understanding of the angular dependence of the magnetization loops and the linear dependence of the compensation temperature. We present strong evidence demonstrating that the perpendicular anisotropy must be tilted away from the perpendicular axis in order to explain the observed features, particularly the hysteresis in the in-plane loops. Our work advances the understanding of DC magnetic properties in thin RE/TM ferrimagnetic films, which has the potential to impact different fields where these materials are involved.

cond-mat.mtrl-sci

Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions

Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in a perpendicular magnetic tunnel junction. The nanofabricated magnetic tunnel junction devices have an optimized bottom reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to 74\% after patterning down to sub-100nm lateral dimensions. Experiments on continuous films reveal peculiar reversal patterns of concentric rings with opposite magnetic directions, above certain threshold fluence. These rings have been correlated to patterned device switching probability as a function of the applied laser fluence. Moreover, the magnetization reversal is independent on the duration of the laser pulse. According to our macrospin model, the underlying magnetization reversal mechanism can be attributed to an in-plane reorientation of the magnetization due to a fast reduction of the out-of-plane uniaxial anisotropy. These aspects are of great interest both for the physical understanding of the switching phenomenon and their consequences for all-optical-switching memory devices, since they allow for a large fluence operation window with high resilience to pulse length variability.

physics.app-ph

Penetration depth of Cooper pairs in the IrMn antiferromagnet

Suppression of superconductivity due to the proximity effect between a superconductor and a ferromagnet can be partially alleviated when a Cooper pair simultaneously samples different directions of the short-range exchange field. The superconductor's critical temperature, TC, is therefore expected to partially recover when the ferromagnet is in a multi-domain state, as opposed to a single-domain state. Here, we discuss series of experiments performed with ferromagnet(Pt/Co)/spacer(IrMn and Pt)/superconductor(NbN) heterostructures. By tuning the various parameters in play, e.g., superconducting coherence length-to-thicknesses ratio, and domain sizes, we obtained up to 10 percent recovery of the superconducting critical temperature {\Delta}TC/TC. This large-scale recovery made novel investigations possible. In particular, from the spacer thickness-dependence of {\Delta}TC/TC, it was possible to deduce the characteristic length for Cooper pair penetration in an IrMn antiferromagnet. This information is crucial for electronic transport, and up to now has been difficult to access experimentally for antiferromagnets.

cond-mat.mtrl-sci

Self-induced inverse spin Hall effect in ferromagnets: demonstration through non-monotonous temperature-dependence in permalloy

We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pumping experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew scattering, side-jump, and intrinsic contributions to the T-dependent spin Hall conductivity. Experimental data were similar whatever the material in contact with permalloy (oxides or metals), and revealed an increase of produced current with t, demonstrating a bulk origin of the effect.

cond-mat.mes-hall

Stacking order-dependent sign-change of microwave phase due to eddy currents in nanometer-scale NiFe/Cu heterostructures

In the field of spintronics, ferromagnetic/non-magnetic metallic multilayers are core building blocks for emerging technologies. Resonance experiments using stripline transducers are commonly used to characterize and engineer these stacks for applications. Up to now in these experiments, the influence of eddy currents on the excitation of the dynamics of ferromagnetic magnetization below the skin-depth limit was most often neglected. Here, using a coplanar stripline transducer, we experimentally investigated the broadband ferromagnetic resonance response of NiFe/Cu bilayers a few nanometers thick in the sub-skin-depth regime. Asymmetry in the absorption spectrum gradually built up as the excitation frequency and Cu-layer thickness increased. Most significantly, the sign of the asymmetry depended on the stacking order. Experimental data were consistent with a quantitative analysis considering eddy currents generated in the Cu layers and the subsequent phaseshift of the feedback magnetic field generated by the eddy currents. These results extend our understanding of the impact of eddy currents below the microwave magnetic skin-depth and explain the lineshape asymmetry and phase lags reported in stripline experiments.

cond-mat.mes-hall

Nearly isotropic spin-pumping related Gilbert damping in Pt/Ni$_{81}$Fe$_{19}$/Pt

A recent theory by Chen and Zhang [Phys. Rev. Lett. 114, 126602 (2015)] predicts strongly anisotropic damping due to interfacial spin-orbit coupling in ultrathin magnetic films. Interfacial Gilbert-type relaxation, due to the spin pumping effect, is predicted to be significantly larger for magnetization oriented parallel to compared with perpendicular to the film plane. Here, we have measured the anisotropy in the Pt/Ni$_{81}$Fe$_{19}$/Pt system via variable-frequency, swept-field ferromagnetic resonance (FMR). We find a very small anisotropy of enhanced Gilbert damping with sign opposite to the prediction from the Rashba effect at the FM/Pt interface. The results are contrary to the predicted anisotropy and suggest that a mechanism separate from Rashba spin-orbit coupling causes the rapid onset of spin-current absorption in Pt.

cond-mat.mtrl-sci

Spin pumping as a generic probe for linear spin fluctuations: demonstration with ferromagnetic and antiferromagnetic orders, metallic and insulating electrical states

We investigated spin injection by spin pumping from a spin-injector(NiFe) into a spin-sink to detect spin fluctuations in the spin-sink. By scanning the ordering-temperature of several magnetic transitions, we found that enhanced spin pumping due to spin fluctuations applies with several ordering states: ferromagnetic(Tb) and antiferromagnetic(NiO, NiFeOx, BiFeO3, exchange-biased and unbiased IrMn). Results also represent systematic experimental investigation supporting that the effect is independent of the metallic and insulating nature of the spin-sink, and is observed whether the spin current probe involves electronic or magnonic transport, facilitating advances in material characterization and engineering for spintronic applications.

cond-mat.mtrl-sci

Unraveling the influence of electronic and magnonic spin current injection near the magnetic ordering transition of IrMn metallic antiferromagnets

Although spin injection at room temperature in an IrMn metallic antiferromagnet strongly depends on the transport regime, and is more efficient in the case of magnonic transport, in this article, we present experimental data demonstrating that the enhanced efficiency of spin injection caused by spin fluctuations near the ordering temperature can be as efficient for the electronic and magnonic transport regimes. By selecting representative interacting environments, we also demonstrated that the amplification of spin injection near the ordering temperature of the IrMn antiferromagnet is independent of exchange coupling with an adjacent NiFe ferromagnet. In addition, our findings confirm that the spin current carried by magnons penetrates deeper than that transported by conduction electrons in IrMn. Finally, our data indicates that the value of the ordering temperature for the IrMn antiferromagnet is not significantly affected by either the electronic or magnonic nature of the spin current probe, or by exchange coupling.

cond-mat.mtrl-sci

Near-field magneto-caloritronic nanoscopy on ferromagnetic nanostructures

Near-field optical microscopy by means of infrared photocurrent mapping has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism arising when a conducting surface, exhibiting a magnetic moment, is exposed to a nanoscale heat source. The magneto-caloritronic response of the sample to near-field excitation of a localized thermal gradient leads to a contrast determined by the local state of magnetization. By comparing the measured electric response of a magnetic reference sample with numerical simulations we derive an estimate of the field enhancement and the corresponding temperature profile induced on the sample surface.

cond-mat.mes-hall

Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy

A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low damping material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter.

cond-mat.mtrl-sci

The skyrmion switch: turning magnetic skyrmion bubbles on and off with an electric field

Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric field gating, an easily integrable and potentially energetically efficient solution. We present a detailed stability diagram of the skyrmion bubbles in a Pt/Co/oxide trilayer and show that their stability can be controlled via an applied electric field. An analytical bubble model, with the Dzyaloshinskii-Moriya interaction imbedded in the domain wall energy, account for the observed electrical skyrmion switching effect. This allows us to unveil the origin of the electrical control of skyrmions stability and to show that both magnetic dipolar interaction and the Dzyaloshinskii-Moriya interaction play an important role in the skyrmion bubble stabilization.

cond-mat.mtrl-sci

Relaxation mechanism driven by spin angular momentum absorption throughout antiferromagnetic phase transition in NiFe surface oxides

We report an alternative mechanism for the physical origin of the temperature-dependent ferromagnetic relaxation of Permalloy (NiFe) thin films. Through spin-pumping experiments, we demonstrate that the peak in the temperature-dependence of NiFe damping can be understood in terms of enhanced spin angular momentum absorption at the magnetic phase transition in antiferromagnetic surface-oxidized layers. These results suggest new avenues for the investigation of an incompletely-understood phenomenon in physics.

cond-mat.mtrl-sci

Spin pumping damping and magnetic proximity effect in Pd and Pt spin-sink layers

We investigated the spin pumping damping contributed by paramagnetic layers (Pd, Pt) in both direct and indirect contact with ferromagnetic Ni$_{81}$Fe$_{19}$ films. We find a nearly linear dependence of the interface-related Gilbert damping enhancement $Δα$ on the heavy-metal spin-sink layer thicknesses t$_\textrm{N}$ in direct-contact Ni$_{81}$Fe$_{19}$/(Pd, Pt) junctions, whereas an exponential dependence is observed when Ni$_{81}$Fe$_{19}$ and (Pd, Pt) are separated by \unit[3]{nm} Cu. We attribute the quasi-linear thickness dependence to the presence of induced moments in Pt, Pd near the interface with Ni$_{81}$Fe$_{19}$, quantified using X-ray magnetic circular dichroism (XMCD) measurements. Our results show that the scattering of pure spin current is configuration-dependent in these systems and cannot be described by a single characteristic length.

cond-mat.mes-hall

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell.

cond-mat.mes-hall

Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet

The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material : controlling DW nucleation and stopping DW propagation at the edge of the electrode.

cond-mat.mtrl-sci

Pd magnetism induced by indirect interlayer exchange coupling

We show that very large paramagnetic moments are created in ultrathin Pd layers through indirect interlayer exchange coupling. Pd $L$-edge x-ray magnetic circular dichroism measurements show Pd moments in [Pd(2.5nm)/Cu(3nm)/Ni$_{81}$Fe$_{19}$(5nm)/Cu(3nm)]$_{20}$ superlattices which are ferromagnetically aligned with the applied field and nearly 3% the size of Pd moments created in directly exchange coupled [Pd(2.5nm)/Ni$_{81}$Fe$_{19}$(5nm)]$_{20}$ superlattices. The induced moment is two orders of magnitude larger than that expected from RKKY exchange acting on the bulk paramagnetic susceptibility of Pd.

cond-mat.mtrl-sci

Electrical spin injection and detection in Germanium using three terminal geometry

In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.

cond-mat.mtrl-sci