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S. Bals

Publications and source records attributed to S. Bals.

5 recordsLinked to original sources
arXiv2021

Analysing the linearised radially polarised light source for improved precision in strain measurement using micro-Raman spectroscopy

Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique with high sensitivity to mechanical stress that does not require any special sample preparation procedures in comparison to characterization involving transmission electron microscopy (TEM), making it suitable for inline strain measurement in the semiconductor industry. Indeed at present, strain measurements using Raman spectroscopy are already routinely carried out in semiconductor devices as it is cost effective, fast and non-destructive. In this paper we explore the usage of linearised-radially polarised light as an excitation source, which does provide significantly enhanced accuracy and precision as compared to linearly polarised light for this application. Numerical simulations are done to quantitatively evaluate the electric field intensities that contribute to this enhanced sensitivity. We benchmark the experimental results against TEM diffraction-based techniques like nano-beam diffraction and Bessel diffraction. Differences between both approaches are assigned to strain relaxation due to sample thinning required in TEM setups, demonstrating the benefit of Raman for nondestructive inline testing.

physics.optics↗
arXiv2013

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.

cond-mat.mtrl-sci↗
arXiv2008

Transport, magnetic, and structural properties of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films. Evidence for hole-doping

Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at $720 ^\circ$C and oxygen pressure $p_{O_2}=1-25 $Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO$_2$ as a secondary phase could be avoided for $p_{O_2}\ge 8 $Pa. However, transmission electron microscopy shows the presence of CeO$_2$ nanoclusters, even in those films which appear to be single phase in XRD. With O$_2$ annealing, the metal-to-insulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La$_{0.7}$Ce$_{0.3}$MnO$_3$ with mixed Mn$^{3+}$/Mn$^{2+}$ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-to-insulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn$^{3+}$ and Mn$^{4+}$, and only a small amount of Mn$^{2+}$ ions can be observed by XAS. Mn$^{2+}$ and Ce$^{4+}$ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.

cond-mat.str-el↗
arXiv2006

Study of Correlation Effects in the High Formal Oxidation State Compound Sr$_2$CoO$_4$

Two recent reports confirm that the newly synthesized Sr$_2$CoO$_4$ (formal oxidation state Co$^{4+}$) shows a high Curie temperature (~ 250 K), but they report different moments of 1.8 $μ_B$ and 1 $μ_B$ per Co. Using both commonly used functionals in the correlated band approach (LDA+U) as well as the local density approximation (LDA),the combined effects of correlation and hybridization with O 2p states are calculated and analyzed. Sr$_2$CoO$_2$ is already ferromagnetic within LDA (M=1.95 $μ_B$). Increasing U from zero, the two LDA+U schemes affect the moment oppositely out to a critical value $U_c$=2.5 eV, at which point they transform discontinuously from different states to the same large U state. Fixing U at $U_c$, fixed spin moment calculations show similar behavior out to a minimum at 1$μ_B$ (a half metallic state), beyond which the fully-localized-limit scheme jumps to a state with energy minimum very near 2$μ_B$ very close to the LDA moment). Although the energy minima occur very near integer values of the moment/Co (1$μ_B, 2$μ_B$), the strong 3d-2p mixing and resulting 3d orbital occupations seem to preclude any meaningful S=1/2 or S=1 assignment to the Co ion.

cond-mat.str-el↗