arXiv subjects

S. Buchberger

Publications and source records attributed to S. Buchberger.

4 recordsLinked to original sources

arXiv2025

Reconfigurable flat bands from cooperative moir\'e and charge order

The formation of flat electronic bands from long-wavelength superperiodic moir\'e potentials in van der Waals heterostructures underpins the creation and control of a host of highly-tunable correlated and topological phases. While the underlying moir\'e periodicity is typically a fixed property of the heterostructure, here we show how the development of a charge-density wave (CDW) in one of the constituent materials can create an emergent moir\'e lattice. We demonstrate this experimentally in TiSe$_2$/graphite epitaxial heterostructures, using angle-resolved photoemission and scanning-tunnelling microscopy and spectroscopy to directly image the resulting long-wavelength moir\'e potential and concomitant flat-band formation. We show how the intrinsically low-energy, deformable landscape of the CDW imparts significant tunability, stabilising quasi-one-dimensional moir\'e domains from symmetry breaking within the CDW, and allowing the complete suppression of flat-band formation by carrier doping across the CDW phase transition. Our findings thus open a new avenue for engineering moir\'e matter by exploiting the rich many-body states of the parent compounds of 2D heterostructures.

cond-mat.str-el↗

arXiv2025

Substrate pre-sputtering for layer-by-layer van der Waals epitaxy of 2D materials

Two-dimensional transition metal chalcogenides, with their atomically layered structure, favourable electronic and mechanical properties, and often strong spin-orbit coupling, are ideal systems for fundamental studies and for applications ranging from spintronics to optoelectronics. Their bottom-up synthesis via epitaxial techniques such as molecular-beam epitaxy (MBE) has, however, proved challenging. Here, we develop a simple substrate pre-treatment process utilising exposure to a low-energy noble gas plasma. We show how this dramatically enhances nucleation of an MBE-grown epilayer atop, and through this, realise a true layer-by-layer growth mode. We further demonstrate the possibility of tuning the resulting growth dynamics via control of the species and dose of the plasma exposure.

cond-mat.mtrl-sci↗

arXiv2025

Resonant interlayer coupling in NbSe$_2$-graphite epitaxial moir{\'e} superlattices

Moir{\'e} heterostructures, created by stacking two-dimensional (2D) materials together with a finite lattice mismatch or rotational twist, represent a new frontier of designer quantum materials. Typically, however, this requires the painstaking manual assembly of heterostructures formed from exfoliated materials. Here, we observe clear spectroscopic signatures of moir{\'e} lattice formation in epitaxial heterostructures of monolayer (ML) NbSe$_2$ grown on graphite substrates. Our angle-resolved photoemission measurements and theoretical calculations of the resulting electronic structure reveal moir{\'e} replicas of the graphite $\pi$ states forming pairs of interlocking Dirac cones. Interestingly, these intersect the NbSe$_2$ Fermi surface at the $\mathbf{k}$-space locations where NbSe$_2$'s charge-density wave (CDW) gap is maximal in the bulk. This provides a natural route to understand the lack of CDW enhancement for ML-NbSe$_2$/graphene as compared to a more than four-fold enhancement for NbSe$_2$ on insulating support substrates, and opens new prospects for using moir{\'e} engineering for controlling the collective states of 2D materials.

cond-mat.mtrl-sci↗

arXiv2022

Two-dimensional ferromagnetic extension of a topological insulator

Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficient overlap of TSS and the FM subsystem. Here, we take a different approach, namely FM extension, using a thin film of the 3D TI Bi$_2$Te$_3$, interfaced with a monolayer of the lattice-matched van der Waals ferromagnet MnBi$_2$Te$_4$. Robust 2D ferromagnetism with out-of-plane anisotropy and a critical temperature of $\text{T}_\text{c}\approx$~15 K is demonstrated by X-ray magnetic dichroism and electrical transport measurements. Using angle-resolved photoelectron spectroscopy, we observe the opening of a sizable magnetic gap in the 2D FM phase, while the surface remains gapless in the paramagnetic phase above T$_c$. This sizable gap indicates a relocation of the TSS to the FM ordered Mn moments near the surface, which leads to a large mutual overlap.

cond-mat.mtrl-sci↗