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S. Cairns

Publications and source records attributed to S. Cairns.

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Wideband Josephson Parametric Isolator

The cryogenic hardware required to build a superconducting qubit based quantum computer demands a variety of microwave components. These elements include microwave couplers, filters, amplifiers, and circulators/isolators. Traditionally implemented as discrete components, integration of this peripheral hardware, in an effort to reduce overall footprint, thermal load, and added noise, is a key challenge to scaling modern quantum processors with qubit counts climbing over the 100+ mark. Ferrite--based microwave isolators, generally employed in the readout chain to decouple qubits and resonators from readout electronics, persist as one of the volumetrically largest devices still utilized as discrete components. Here we present an alternative two--port isolating integrated circuit derived from the DC Superconducting Quantum Interference Device (DC-SQUID). Non-reciprocal transmission is achieved using the three-wave microwave mixing properties of a flux-modulated DC--SQUID. We show that when multiple DC-SQUIDs are embedded in a multi--pole admittance inverting filter structure, the three-wave mixing derived from the flux pumping of the DC-SQUIDs can provide directional microwave power flow. For a three--pole filter device, we experimentally demonstrate a directionality greater than 15 dB over a 600 MHz bandwidth.

quant-ph

Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells: a practical route to hot carrier solar cells

InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elevated temperatures. At temperatures below 90 K photoluminescence measurements are consistent with type-I quantum wells that exhibit hole localization associated with alloy/interface fluctuations. At elevated temperatures hole delocalization reveals the true type-II band alignment; where it is observed that inhibited radiative recombination due to the spatial separation of the charge carriers dominates hot carrier relaxation. This decoupling of phonon-mediated relaxation results in robust hot carriers at higher temperatures even at lower excitation powers. These results indicate type-II quantum wells offer potential as practical hot carrier systems.

cond-mat.mtrl-sci