arXiv subjects

S. Ciraci

Publications and source records attributed to S. Ciraci.

At least 37 records · Page 2Linked to original sources

arXiv2012

Graphene coatings: An efficient protection from oxidation

We demonstrate that graphene coating can provide an efficient protection from oxidation by posing a high energy barrier to the path of oxygen atom, which could have penetrated from the top of graphene to the reactive surface underneath. Graphene bilayer, which blocks the diffusion of oxygen with a relatively higher energy barrier provides even better protection from oxidation. While an oxygen molecule is weakly bound to bare graphene surface and hence becomes rather inactive, it can easily dissociates into two oxygen atoms adsorbed to low coordinated carbon atoms at the edges of a vacancy. For these oxygen atoms the oxidation barrier is reduced and hence the protection from oxidation provided by graphene coatings is weakened. Our predictions obtained from the state of the art first-principles calculations of electronic structure, phonon density of states and reaction path will unravel how a graphene can be used as a corrosion resistant coating and guide further studies aiming at developing more efficient nanocoatings.

cond-mat.mes-hall↗

arXiv2012

Effects of static charging and exfoliation of layered crystals

Using first-principle plane wave method we investigate the effects of static charging on structural, elastic, electronic and magnetic properties of suspended, single layer graphene, graphane, fluorographene, BN and MoS2 in honeycomb structures. The limitations of periodic boundary conditions in the treatment of charged layers are clarified. Upon positive charging the band gaps between the conduction and valence bands increase, but the single layer materials become metallic owing to the Fermi level dipping below the maximum of valence band. Moreover, their bond lengths increase and their in-plane stiffness decreases. As a result, phonons are softened and frequencies of Raman active modes are lowered. High level of charging leads to instability. We showed that wide band gap BN and MoS2 slabs are metallized as a result of electron removal and their outermost layers are exfoliated once the charging exceeds a threshold value.

cond-mat.mes-hall↗

arXiv2011

Functionalization of Single Layer MoS$_2$ Honeycomb Structures

Based on the first-principles plane wave calculations, we studied the functionalization of the two-dimensional single layer MoS$_2$ structure via adatom adsorption and vacancy defect creation. Minimum energy adsorption sites are determined for sixteen different adatoms, each gives rise to diverse properties. Bare, single layer MoS$_2$, which is normally a nonmagnetic, direct band gap semiconductor, attains a net magnetic moment upon adsorption of specific transition metal atoms, as well as silicon and germanium atoms. The localized donor and acceptor states in the band gap expand the utilization of MoS$_2$ in nanoelectronics and spintronics. Specific adatoms, like C and O, attain significant excess charge upon adsorption to single layer MoS$_{2}$ which may be useful for its tribological applications. Each MoS$_{2}$-triple vacancy created in a single layer MoS$_{2}$ gives rise to a net magnetic moment, while other vacancy defects related with Mo and S atoms do not influence the nonmagnetic ground state. Present results are also relevant for the surface of graphitic MoS$_2$.

cond-mat.mtrl-sci↗

arXiv2011

Mechanical and Electronic Properties of MoS$_2$ Nanoribbons and Their Defects

We present our study on atomic, electronic, magnetic and phonon properties of one dimensional honeycomb structure of molybdenum disulfide (MoS$_2$) using first-principles plane wave method. Calculated phonon frequencies of bare armchair nanoribbon reveal the fourth acoustic branch and indicate the stability. Force constant and in-plane stiffness calculated in the harmonic elastic deformation range signify that the MoS$_2$ nanoribbons are stiff quasi one dimensional structures, but not as strong as graphene and BN nanoribbons. Bare MoS$_2$ armchair nanoribbons are nonmagnetic, direct band gap semiconductors. Bare zigzag MoS$_2$ nanoribbons become half-metallic as a result of the (2x1) reconstruction of edge atoms and are semiconductor for minority spins, but metallic for the majority spins. Their magnetic moments and spin-polarizations at the Fermi level are reduced as a result of the passivation of edge atoms by hydrogen. The functionalization of MoS$_2$ nanoribbons by adatom adsorption and vacancy defect creation are also studied. The nonmagnetic armchair nanoribbons attain net magnetic moment depending on where the foreign atoms are adsorbed and what kind of vacancy defect is created. The magnetization of zigzag nanoribbons due to the edge states is suppressed in the presence of vacancy defects.

cond-mat.mtrl-sci↗

arXiv2011

Carbon chains grown perpendicularly on graphene

Based on first-principles calculations we predict a peculiar growth process, where carbon adatoms adsorbed to graphene readily diffuse above room temperature and nucleate segments of linear carbon chains attached to graphene. These chains grow longer on graphene through insertion of carbon atoms one at a time from the bottom end and display a self-assembling behavior. Eventually, two allotropes of carbon, namely graphene and cumulene are combined to exhibit important functionalities. The segments of carbon chains on graphene become chemically active sites to bind foreign atoms or large molecules. When bound to the ends of carbon chains, transition metal atoms, Ti, Co and Au, attribute a magnetic ground state to graphene sheets and mediate stable contacts with interconnects. We showed that carbon chains can grow also on single wall carbon nanotubes.

cond-mat.mtrl-sci↗

arXiv2010

A first-principles systematic study of GaAs nanowires

In this paper we present a detailed analysis of the atomic and electronic structure of GaAs nanowires using first-principles pseudopotential calculations. We consider six different types of nanowires with different diameters all grown along [111] direction and reveal interesting trends between cohesive energy and nanowire type with varying diameters. Generally, the average cohesive energy of nanowires with wurtzite stacking is higher than those with zinc blende stacking for small diameters. We found that most of the bare nanowires considered here are semiconducting and continue to be semiconducting upon the passivation of surface dangling bonds with hydrogen atom. However, the surface states associated with the surface atoms having two dangling bonds in zinc blende stacking occur in the band gap and can decrease the band gap to change the nanowire from semiconducting to metallic state. These nanowires become semiconducting upon hydrogen passivation. Even if the band gap of some nanowires decreases with increasing diameter and hence reveals the quantum confinement effect, generally the band gap variation is rather complex and depends on the type and geometry, diameter, type of relaxation and also whether the dangling bonds of surface atoms are saturated with hydrogen.

cond-mat.mtrl-sci↗

arXiv2010

Armchair nanoribbons of silicon and germanium honeycomb structures

We present a first-principles study of bare and hydrogen passivated armchair nanoribbons of the puckered single layer honeycomb structures of silicon and germanium. Our study includes optimization of atomic structure, stability analysis based on the calculation of phonon dispersions, electronic structure and the variation of band gap with the width of the ribbon. The band gaps of silicon and germanium nanoribbons exhibit family behavior similar to those of graphene nanoribbons. The edges of bare nanoribbons are sharply reconstructed, which can be eliminated by the hydrogen termination of dangling bonds at the edges. Periodic modulation of the nanoribbon width results in a superlattice structure which can act as a multiple quantum wells. Specific electronic states are confined in these wells. Confinement trends are qualitatively explained by including the effects of the interface. In order to investigate wide and long superlattice structures we also performed empirical tight binding calculations with parameters determined from \textit{ab initio} calculations.

cond-mat.mes-hall↗

arXiv2010

Long ranged interactions in carbon atomic chains

Based on first-principles calculations we revealed fundamental properties of infinite and finite size monatomic chains of carbon atoms in equilibrium and under an applied strain. Distributions of bond lengths and magnetic moments at atomic sites exhibit interesting even-odd disparity depending on the number of carbon atoms in the chain and on the type of saturation of carbon atoms at both ends. It was shown that, the $π$-bands of carbon atomic chains behave as a one dimensional free electron system. A local perturbation created by a small displacement of the single carbon atom at the center of a long chain induces oscillations of atomic forces and charge density, which are carried to long distances over the chain. These long ranged oscillations are identified as Friedel oscillations showing $1/r$ decay rate in one dimensional systems.

cond-mat.mes-hall↗

arXiv2010

Functionalization of BN Honeycomb structure by Adsorption and Substitution of Foreign atoms

We carried out first-principles calculations within Density Functional Theory to investigate the structural, electronic and magnetic properties of boron-nitride (BN) honeycomb structure functionalized by adatom adsorption, as well as by the substitution of foreign atoms for B and N atoms. For periodic high density coverage, most of $3d$ transition metal atoms and some of group 3A, 4A, and 6A elements are adsorbed with significant binding energy and modify the electronic structure of bare BN monolayer. While bare BN monolayer is nonmagnetic, wide band gap semiconductor, at high coverage of specific adatoms it can achieve magnetic metallic, even half-metallic ground states. At low coverage, the bands associated with adsorbed atoms are flat and the band structure of parent BN is not affected significantly. Therefore, adatoms and substitution of foreign atoms at low coverage are taken to be the representative of impurity atoms yielding localized states in the band gap and resonance states in the band continua. Notably, the substitution of C for B and N yield donor and acceptor like magnetic states in the band gap. Localized impurity states occurring in the gap give rise to interesting properties for electronic and optical application of the single layer BN honeycomb structure.

cond-mat.mtrl-sci↗

arXiv2010

The response of mechanical and electronic properties of graphane to the elastic strain

Based on first-principles calculations, we resent a method to reveal the elastic properties of recently synthesized monolayer hydrocarbon, graphane. The in-plane stiffness and Poisson's ratio values are found to be smaller than those of graphene, and its yielding strain decreases in the presence of various vacancy defects and also at high ambient temperature. We also found that the band gap can be strongly modified by applied strain in the elastic range.

cond-mat.mtrl-sci↗

arXiv2010

A First-Principles Study of Defects and Adatoms in Silicon Carbide Honeycomb Structures

We present a study of mechanical, electronic and magnetic properties of two dimensional (2D), monolayer of silicon carbide (SiC) in honeycomb structure and its quasi 1D armchair nanoribbons using first-principles plane wave method. In order to reveal dimensionality effects, a brief study of 3D bulk and 1D atomic chain of SiC are also included. Calculated bond-lengths, cohesive energies, charge transfers and band gaps display a clear dimensionality effect. The stability analysis based on the calculation of phonon frequencies indicates that 2D SiC monolayer is stable in planar geometry. We found that 2D SiC monolayer in honeycomb structure and its bare and hydrogen passivated nanoribbons are ionic, non-magnetic, wide band gap semiconductors. The band gap is further increased upon self-energy corrections. The mechanical properties are investigated using the strain energy calculations. The effect of various vacancy defects, adatoms and substitutional impurities on electronic and magnetic properties in 2D SiC monolayer and in its armchair nanoribbons are also investigated. Some of these vacancy defects and impurities, which are found to influence physical properties and attain magnetic moments, can be used to functionalize SiC honeycomb structures.

cond-mat.mtrl-sci↗

arXiv2010

A First-Principles Study of Zinc Oxide Honeycomb Structures

We present a first-principles study of the atomic, electronic, and magnetic properties of two-dimensional (2D), single and bilayer ZnO in honeycomb structure and its armchair and zigzag nanoribbons. In order to reveal the dimensionality effects, our study includes also bulk ZnO in wurtzite, zincblende, and hexagonal structures. The stability of 2D ZnO, its nanoribbons and flakes are analyzed by phonon frequency, as well as by finite temperature ab initio molecular-dynamics calculations. 2D ZnO in honeycomb structure and its armchair nanoribbons are nonmagnetic semiconductors but acquire net magnetic moment upon the creation of zinc-vacancy defect. Zigzag ZnO nanoribbons are ferromagnetic metals with spins localized at the oxygen atoms at the edges and have high spin polarization at the Fermi level. However, they change to nonmagnetic metal upon termination of their edges with hydrogen atoms. From the phonon calculations, the fourth acoustical mode specified as twisting mode is also revealed for armchair nanoribbon. Under tensile stress the nanoribbons are deformed elastically maintaining honeycomblike structure but yield at high strains. Beyond yielding point honeycomblike structure undergo a structural change and deform plastically by forming large polygons. The variation in the electronic and magnetic properties of these nanoribbons have been examined under strain. It appears that plastically deformed nanoribbons may offer a new class of materials with diverse properties.

cond-mat.mtrl-sci↗

arXiv2009

Monolayer honeycomb structures of group IV elements and III-V binary compounds

Using first-principles plane wave calculations, we investigate two dimensional honeycomb structure of Group IV elements and their binary compounds, as well as the compounds of Group III-V elements. Based on structure optimization and phonon mode calculations, we determine that 22 different honeycomb materials are stable and correspond to local minima on the Born-Oppenheimer surface. We also find that all the binary compounds containing one of the first row elements, B, C or N have planar stable structures. On the other hand, in the honeycomb structures of Si, Ge and other binary compounds the alternating atoms of hexagons are buckled, since the stability is maintained by puckering. For those honeycomb materials which were found stable, we calculated optimized structures, cohesive energies, phonon modes, electronic band structures, effective cation and anion charges, and some elastic constants. The band gaps calculated within Density Functional Theory using Local Density Approximation are corrected by GW0 method. Si and Ge in honeycomb structure are semimetal and have linear band crossing at the Fermi level which attributes massless Fermion character to charge carriers as in graphene. However, all binary compounds are found to be semiconductor with band gaps depending on the constituent atoms. We present a method to reveal elastic constants of 2D honeycomb structures from the strain energy and calculate the Poisson's ratio as well as in-plane stiffness values. Preliminary results show that the nearly lattice matched heterostructures of ...

cond-mat.mtrl-sci↗

arXiv2009

High-capacity hydrogen storage by metallized graphene

First-principles plane wave calculations predict that Li can be adsorbed on graphene forming a uniform and stable coverage on both sides. A significant part of the electronic charge of the Li-$2s$ orbital is donated to graphene and is accommodated by its distorted $π^*$-bands. As a result, semimetallic graphene and semiconducting graphene ribbons change into good metals. It is even more remarkable that Li covered graphene can serve as a high-capacity hydrogen storage medium with each adsorbed Li absorbing up to four H$_2$ molecules amounting to a gravimetric density of 12.8 wt%.

cond-mat.mes-hall↗

arXiv2009

Hydrogen storage of calcium atoms adsorbed on graphene: First-principles plane wave calculations

Based on the first-principles plane wave calculations, we showed that Ca adsorbed on graphene can serve as a high-capacity hydrogen storage medium, which can be recycled by operations at room temperature. Ca is chemisorbed by donating part of its 4s-charge to the empty $π^*$-band of graphene. At the end adsorbed Ca atom becomes positively charged and the semi-metallic graphene change into a metallic state. While each of adsorbed Ca atoms forming the (4x4) pattern on the graphene can absorb up to five H_2 molecules, hydrogen storage capacity can be increased to 8.4 wt % by adsorbing Ca to both sides of graphene and by increasing the coverage to form the (2x2) pattern. Clustering of Ca atoms is hindered by the repulsive Coulomb interaction between charged Ca atoms.

cond-mat.mes-hall↗

arXiv2008

Two and One-dimensional Honeycomb Structure of Boron Nitride

This paper presents a systematic study of two and one dimensional honeycomb structure of boron nitride (BN) using first-principles plane wave method. Two-dimensional (2D) graphene like BN is a wide band gap semiconductor with ionic bonding. Phonon dispersion curves demonstrate the stability of 2D BN flakes. Quasi 1D armchair BN nanoribbon are nonmagnetic semiconductors with edge states. Upon passivation of B and N with hydrogen atoms these edge states disappear and band gap increases. Bare zigzag BN nanoribbons are metallic, but become a ferromagnetic semiconductor when their both edges are passivated with hydrogen. However, their magnetic ground state, electronic band structure and band gap are found to be strongly dependent on whether B- or N-edge of the ribbon is saturated with hydrogen. Vacancy defects in armchair and zigzag nanoribbons affects also magnetic state and electronic structure. In order to reveal dimensionality effects these properties are contrasted with those of various 3D BN crystals and 1D BN atomic chain.

cond-mat.mes-hall↗

arXiv2008

Monitoring of band gap and magnetic state of graphene nanoribbons through vacancies

Using first-principles plane wave calculations we predict that electronic and magnetic properties of graphene nanoribbons can be affected by defect-induced itinerant states. The band gaps of armchair nanoribbons can be modified by hydrogen saturated holes. Defects due to periodically repeating vacancy or divacancies induce metallization, as well as magnetization in non-magnetic semiconducting nanoribbons due to the spin-polarization of local defect states. Antiferromagnetic ground state of semiconducting zigzag ribbons can change to ferrimagnetic state upon creation of vacancy defects, which reconstruct and interact with edge states. Even more remarkable is that all these effects of vacancy defects are found to depend on their geometry and position relative to edges. It is shown that these effects can, in fact, be realized without really creating defects.

cond-mat.mes-hall↗

arXiv2008

Superlattice Structures of Graphene based Nanoribbons

Based on first-principles calculations we predict that periodically repeated junctions of armchair graphene nanoribbons of different widths form superlattice structures. In these superlattice heterostructures the width and the energy gap are modulated in real space and specific states are confined in certain segments. Orientation of constituent nanoribbons, their width and length, the symmetry of the junction are the structural parameters to engineer electronic properties of these quantum structures. Not only the size modulation, but also composition modulation, such as periodically repeated, commensurate heterojunctions of BN and graphene honeycomb nanoribbons result in a multiple quantum well structure. We showed that these graphene based quantum structures can introduce novel concepts to design nanodevices.

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