arXiv subjects

S. Couet

Publications and source records attributed to S. Couet.

At least 19 recordsLinked to original sources

arXiv2026

Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer

We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is detected via tunneling magnetoresistance (TMR). Simulations reveal that local modulation of perpendicular magnetic anisotropy (PMA) in one SAF sublayer leads to distinct switching characteristics. The switching field varies linearly with the anisotropy field, indicating voltage-controlled magnetic anisotropy (VCMA)-dominated dynamics similar to single free-layer devices. We then experimentally study the magnetic switching field of MTJ devices with SAF free layers under applied gate voltage. By varying the MgO tunnel barrier thickness to systematically modulate the resistance-area (RA) product, we enable quantitative separation of spin-transfer torque (STT), VCMA, and Joule heating contributions. Our findings indicate that VCMA dominates in devices with a high RA product, while low-RA devices exhibit nonlinear switching behavior due to enhanced contributions from STT and Joule heating. Furthermore, the effective fields derived from STT, VCMA, and Joule heating contributions under various gate voltages show minimal dependence on device critical dimensions, indicating favorable scaling behavior. This work presents a unified framework analyzing the roles of STT, VCMA, and Joule heating in SAF-based voltage-gated spin-orbit torque (SOT) MRAM, offering key insights for the optimization of performance, energy efficiency, and scalability in SOT-MRAM technologies.

cond-mat.mes-hall↗

arXiv2022

Manufacturing high-Q superconducting {\alpha}-tantalum resonators on silicon wafers

The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. {\alpha}-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor {\alpha}-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.

quant-ph↗

arXiv2022

Perspectives and Challenges of Scaled Boolean Spintronic Circuits Based on Magnetic Tunnel Junction Transducers

This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL combinational benchmark sets, synthesize them in 7 nm CMOS and in MTJ-based spintronic technologies, and compare the two implementation methods in terms of Energy-Delay-Product (EDP). To fully utilize the technologies potential, CMOS and spintronic implementations are built upon standard Boolean and Majority Gates, respectively. For the spintronic circuits, we assumed that domain conversion (electric/magnetic to magnetic/electric) is performed by means of MTJs and the computation is accomplished by domain wall based majority gates, and considered two EDP estimation scenarios: (i) Uniform Benchmarking, which ignores the circuit's internal structure and only includes domain transducers power and delay contributions into the calculations, and (ii) Majority-Inverter-Graph Benchmarking, which also embeds the circuit structure, the associated critical path delay and energy consumption by DW propagation. Our results indicate that for the uniform case, the spintronic route is better suited for the implementation of complex circuits with few inputs and outputs. On the other hand, when the circuit structure is also considered via majority and inverter synthesis, our analysis clearly indicates that in order to match and eventually outperform CMOS performance, MTJ efficiency has to be improved by 3-4 orders of magnitude. While it is clear that for the time being the MTJ-based-spintronic way cannot compete with CMOS, further transducer developments may tip the balance, which, when combined with information non-volatility, may make spintronic implementation for certain applications that require a large number of calculations and have a rather limited amount of interaction with the environment.

physics.app-ph↗

arXiv2021

Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient (ξ) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm devices used in this study. Further, the device-scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes.

cond-mat.mes-hall↗

arXiv2020

Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators

The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate the reappearance of microwave losses introduced by surface oxides that grow after exposure to the ambient environment. We find that losses in quantum devices are reduced by an order of magnitude, with internal Q-factors reaching up to 7 $\cdot$ 10$^6$ in the single photon regime, when devices are exposed to ambient conditions for 16 min. Furthermore, we observe that Nb2O5 is the only surface oxide that grows significantly within the first 200 hours, following the extended Cabrera-Mott growth model. In this time, microwave losses scale linearly with the Nb$_2$O$_5$ thickness, with an extracted loss tangent tan$δ$ = 9.9 $\cdot$ 10$^{-3}$. Our findings are of particular interest for devices spanning from superconducting qubits, quantum-limited amplifiers, microwave kinetic inductance detectors to single photon detectors.

physics.app-ph↗

arXiv2020

Back-hopping in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions

We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced back-hopping. Studying several material variants reveals that the back-hopping is a feature of the nominally fixed system of the tunnel junction. The back-hopping is found to proceed by two sequential switching events that lead to a final state P' of conductance close to --but distinct from-- that of the conventional parallel state. The P' state does not exist at remanence. It generally relaxes to the conventional antiparallel state if the current is removed. The P' state involves a switching of the sole spin-polarizing part of the fixed layers. The analysis of literature indicates that back-hopping occurs only when the spin-polarizing layer is too weakly coupled to the rest of the fixed system, which justifies a posteriori the mitigation strategies of back-hopping that were implemented empirically in spin-transfer-torque magnetic random access memories.

cond-mat.mtrl-sci↗

arXiv2019

Effect of Tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers

To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing robustness is typically ensured by the insertion of a spacer layer of the early transition metal series within the FeCoB layer. We study the influence of the spacer thickness and growth condition on the switching metrics of tunnel junctions thermally annealed at 400$^\circ$C for the case of 1-4 Å Ta spacers. Thick Ta spacer results in a large anisotropies indicative of a better defined top FeCoB/MgO interface, but this is achieved at the systematic expense of a stronger damping. For the best anisotropy-damping compromise, junctions of diameter 22 nm can still be stable and spin-torque switched. Coercivity and inhomogeneous linewidth broadening, likely arising from roughness at the FeCoB/Ta interface, can be reduced if a sacrificial Mg layer is inserted before the Ta spacer deposition.

cond-mat.mtrl-sci↗

arXiv2019

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.

physics.app-ph↗

arXiv2019

Offset fields in perpendicularly magnetized tunnel junctions

We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide. The free layer offset field is thus accompanied with a shift of the free layer and reference layer ferromagnetic resonance frequencies. The shifts depend on the mutual orientation of the two magnetizations. The offset field decreases with the resistance area product of the tunnel oxide. Patterning the tunnel junction into an STT-MRAM disk-shaped cell changes substantially the offset field, as the reduction of the lateral dimension comes with the generation of stray fields by the reference and the hard layer. The experimental offset field compares best with the spatial average of the sum of these stray fields, thereby providing guidelines for the offset field engineering.

cond-mat.mtrl-sci↗

arXiv2018

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.

cond-mat.mes-hall↗

arXiv2018

Deposition and patterning of magnetic atom trap lattices in FePt films with periods down to 200nm

We report on the epitaxial growth and the characterization of thin FePt films and the subsequent patterning of magnetic lattice structures. These structures can be used to trap ultracold atoms for quantum simulation experiments. We use Molecular Beam Epitaxy (MBE) to deposit monocrystalline FePt films with a thickness of 50 nm. The films are characterized with X-ray scattering and Mossbauer spectroscopy to determine the long range order parameter and the hard magnetic axes. A high monocrystalline fraction was measured as well as a strong remanent magnetization of M = 900 kA/m and coercivity of 0.4 T. Using Electron Beam Lithography (EBL) and argon ion milling we create lattice patterns with a period down to 200 nm, and a resolution of 30 nm. The resulting lattices are imaged in a Scanning Electron Microscope in cross-section created by a Focused Ion Beam. A lattice with continuously varying lattice constant ranging from 5 micrometer down to 250nm has been created to show the wide range of length scales that can now be created with this technique.

physics.atom-ph↗

arXiv2018

Gilbert damping of high anisotropy Co/Pt multilayers

Using broadband ferromagnetic resonance, we measure the damping parameter of [Co(5 Å)/Pt(3 Å)]${\times 6}$ multilayers whose growth was optimized to maximize the perpendicular anisotropy. Structural characterizations indicate abrupt interfaces essentially free of intermixing despite the miscible character of Co and Pt. Gilbert damping parameters as low as 0.021 can be obtained despite a magneto-crystalline anisotropy as large as $10^6~\textrm{J/m}^3$. The inhomogeneous broadening accounts for part of the ferromagnetic resonance linewidth, indicating some structural disorder leading to a equivalent 20 mT of inhomogenity of the effective field. The unexpectedly relatively low damping factor indicates that the presence of the Pt heavy metal within the multilayer may not be detrimental to the damping provided that intermixing is avoided at the Co/Pt interfaces.

cond-mat.mtrl-sci↗

arXiv2017

Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque operated memories. We study the influence of the boron content in MgO / FeCoB /Ta systems alloys on their Gilbert damping after crystallization annealing. Increasing the boron content from 20 to 30\% increases the crystallization temperature, thereby postponing the onset of elemental diffusion within the free layer. This reduction of the interdiffusion of the Ta atoms helps maintaining the Gilbert damping at a low level of 0.009 without any penalty on the anisotropy and the magneto-transport properties up to the 400$^\circ$C annealing required in CMOS back-end of line processing. In addition, we show that dual MgO free layers of composition MgO/FeCoB/Ta/FeCoB/MgO have a substantially lower damping than their MgO/FeCoB/Ta counterparts, reaching damping parameters as low as 0.0039 for a 3 Å thick Tantalum spacer. This confirms that the dominant channel of damping is the presence of Ta impurities within the FeCoB alloy. On optimized tunnel junctions, we then study the duration of the switching events induced by spin-transfer-torque. We focus on the sub-threshold thermally activated switching in optimal applied field conditions. From the electrical signatures of the switching, we infer that once the nucleation has occurred, the reversal proceeds by a domain wall sweeping though the device at a few 10 m/s. The smaller the device, the faster its switching. We present an analytical model to account for our findings. The domain wall velocity is predicted to scale linearly with the current for devices much larger than the wall width. The wall velocity depends on the Bloch domain wall width, such that the devices with the lowest exchange stiffness will be the ones that host the domain walls with the slowest mobilities.

cond-mat.mtrl-sci↗

arXiv2017

Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system

We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co reference layer and a FeCoB polarizing layer. Using conventional magnetometry and advanced broadband ferromagnetic resonance, we identify the properties of each sub-unit of the magnetic tunnel junction and demonstrate that this material option can ensure a satisfactory resilience to the 400$^\circ$C thermal annealing needed in solid-state magnetic memory applications. The dual MgO free layer possesses an anneal-robust 0.4 T effective anisotropy and suffers only a minor increase of its Gilbert damping from 0.007 to 0.010 for the toughest annealing conditions. Within the fixed system, the ferro-coupler and texture-breaking TaFeCoB layer keeps an interlayer exchange above 0.8 mJ/m$^2$, while the Ru antiferrocoupler layer within the synthetic antiferromagnet maintains a coupling above -0.5 mJ/m$^2$. These two strong couplings maintain the overall functionality of the tunnel junction upon the toughest annealing despite the gradual degradation of the thin Co layer anisotropy that may reduce the operation margin in spin torque memory applications. Based on these findings, we propose further optimization routes for the next generation magnetic tunnel junctions.

cond-mat.mtrl-sci↗

arXiv2017

Seed Layer Impact on Structural and Magnetic Properties of [Co/Ni] Multilayers with Perpendicular Magnetic Anisotropy

[Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied to provide the desired face-centered cubic (\textit{fcc}) texture to the [Co/Ni] to obtain PMA. The integration of [Co/Ni] in back-end-of-line (BEOL) processes also requires the PMA to survive post-annealing. In this paper, the impact of NiCr, Pt, Ru, and Ta seed layers on the structural and magnetic properties of [Co(0.3 nm)/Ni(0.6 nm)] multilayers is investigated before and after annealing. The multilayers were deposited \textit{in-situ} on different seeds via physical vapor deposition at room temperature. The as-deposited [Co/Ni] films show the required \textit{fcc}(111) texture on all seeds, but PMA is only observed on Pt and Ru. In-plane magnetic anisotropy (IMA) is obtained on NiCr and Ta seeds, which is attributed to strain-induced PMA loss. PMA is maintained on all seeds after post-annealing up to 400$^{\circ}$C. The largest effective perpendicular anisotropy energy ($K_U^{\mathrm{eff}}\approx 2\times10^5$J/m$^3$) after annealing is achieved on NiCr seed. The evolution of PMA upon annealing cannot be explained by further crystallization during annealing or strain-induced PMA, nor can the observed magnetization loss and the increased damping after annealing. Here we identify the diffusion of the non-magnetic materials from the seed into [Co/Ni] as the major driver of the changes in the magnetic properties. By selecting the seed and post-annealing temperature, the [Co/Ni] can be tuned in a broad range for both PMA and damping.

cond-mat.mtrl-sci↗

arXiv2016

Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy

We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W, Mo) to a very anisotropic [Co/Ni] multilayer embodied in a magnetic tunnel junction meant for spin torque memory applications. For this we use broadband ferromagnetic resonance to follow the field dependence of the acoustical and optical excitation of the composite free layer in both in-plane and out-of-plane applied fields. The modeling provides the interlayer exchange coupling, the anisotropies and the damping factors. The popular Ta spacer are outperformed by W and even more by Mo, which combines the strongest interlayer exchange coupling without sacrificing anisotropies, damping factors and transport properties.

cond-mat.mtrl-sci↗

arXiv2016

Evolution of perpendicular magnetized tunnel junctions upon annealing

We study the evolution of perpendicularly magnetized tunnel junctions under 300 to 400 $^{\circ}$C annealing. The hysteresis loops do not evolve much during annealing and they are not informative of the underlying structural evolutions. These evolutions are better revealed by the frequencies of the ferromagnetic resonance eigenmodes of the tunnel junction. Their modeling provides the exchange couplings and the layers' anisotropies within the stack which can serve as a diagnosis of the tunnel junction state after each annealing step. The anisotropies of the two CoFeB-based parts and the two Co/Pt-based parts of the tunnel junction decay at different rates during annealing. The ferromagnet exchange coupling through the texture-breaking Ta layer fails above 375$^{\circ}$C. The Ru spacer meant to promote a synthetic antiferromagnet behavior is also insufficiently robust to annealing. Based on these evolutions we propose optimization routes for the next generation tunnel junctions.

cond-mat.mtrl-sci↗

arXiv2016

Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions

We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the presence of domain walls in junctions of various sizes. In the antiparallel (AP) to parallel (P) switching, a nucleation phase is followed by an irreversible flow of a wall through the sample at an average velocity of 40 m/s with back and forth oscillation movements indicating a Walker propagation regime. A model with a single-wall locally responding to the spin-torque reproduces the essential dynamical signatures of the reversal. The P to AP transition has a complex dynamics with dynamical back-hopping whose probability increases with voltage. We attribute this back-hopping to the instability of the nominally fixed layers.

cond-mat.mes-hall↗