arXiv subjects

S. D. Mahanti

Publications and source records attributed to S. D. Mahanti.

24 records · Page 2Linked to original sources

arXiv2006

Simple microscopic model of the magneto-electric effect in non-collinear magnets

A 2-site 2-electron model with s- and p-states on each site, having constrained average site-spins S_a, S_b, with angle theta between them, simpler than the previous closely-related model of Katsura et al (KNB), is considered. Intra-site Coulomb repulsion and inter-site spin-orbit coupling V_(SO) are included. The ground state has an electric dipole moment pi consistent with the result of KNB, pi proportional to R x (S_a x S_b) = f, R connecting the two sites, and application to a spiral leads to ferroelectric polarization with direction f, also in agreement with the previous result. However, the present result shows the expected behavior pi goes to 0 as V_(SO) goes to 0, unlike the previous one.

cond-mat.other↗

arXiv2006

Ab initio studies of electronic structure of defects in PbTe

Understanding the detailed electronic structure of deep defect states in narrow band-gap semiconductors has been a challenging problem. Recently, self-consistent ab initio calculations within density functional theory (DFT) using supercell models have been successful in tackling this problem. In this paper, we carry out such calculations in PbTe, a well-known narrow band-gap semiconductor, for a large class of defects: cationic and anionic substitutional impurities of different valence, and cationic and anionic vacancies. For the cationic defects, we study a series of compounds RPb2n-1Te2n, where R is vacancy or monovalent, divalent, or trivalent atom; for the anionic defects, we study compounds MPb2nTe2n-1, where M is vacancy, S, Se or I. We find that the density of states (DOS) near the top of the valence band and the bottom of the conduction band get significantly modified for most of these defects. This suggests that the transport properties of PbTe in the presence of impurities can not be interpreted by simple carrier doping concepts, confirming such ideas developed from qualitative and semi-quantitative arguments.

cond-mat.mtrl-sci↗

arXiv2004

Resonant States in the Electronic Structure of the High Performance Thermoelectrics AgPb$_{m}SbTe$_{2+m}$ ; The Role of Ag-Sb Microstructures

Ab initio electronic structure calculations based on gradient corrected density functional theory were performed on a class of novel quaternary compounds AgPb$_{m}SbTe$_{2+m}$, which were found to be excellent high temperature thermoelctrics with large figure of merit ZT ~2.2 at 800K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be understood in terms of modified Te-Ag(Sb) bonds. Electronic structure near the gap depends sensitively on the microstructural arrangements of Ag-Sb atoms, suggesting that large ZT values may originate from the nature of these ordering arrangements.

cond-mat.mtrl-sci↗

arXiv2003

Temperature dependent total scattering structural study of CaCu3Ti4O12

X-ray and neutron powder diffraction data as a function of temperature are analyzed for the colossal dielectric constant material CaCu3Ti4O12. The local structure is studied using atomic pair distribution function analysis. No evidence is found for enhanced oxygen displacement parameters suggesting that short-range octahedral tilt disorder is minimal. However, an unusual temperature dependence for the atomic displacement parameters of calcium and copper is observed. Temperature dependent modeling of the structure, using bond valence concepts, suggests that the calcium atoms become underbonded below approximately 260 K, which provides a rationale for the unusually high Ca displacement parameters at low temperature.

cond-mat.mtrl-sci↗

arXiv2002

Scanning Tunneling Microscopy of Defect States in the Semiconductor Bi$_2$Se$_3$

Scanning tunneling spectroscopy images of Bi$_2$Se$_3$ doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model we show that the geometry of the defect states in Bi$_2$Se$_3$ can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.

cond-mat.mtrl-sci↗

arXiv2001

Structure of nanocrystalline materials using atomic pair distribution function analysis: study of LiMoS2

The structure of LiMoS2 has been experimentally determined for the first time. The approach of atomic pair distribution function (PDF) analysis was used because of the lack of well defined Bragg peaks due to the short structural coherence (~ 50 A) in this intercalation compound. This represents one of the first instances where the structure of such poorly diffracting material was determined from the total scattering including diffuse as well as Bragg scattering. The reduction of Mo by Li results in Mo-Mo bonding with the formation of chains of distorted Mo-S6 octahedra. Using the refined structural parameters the electronic band-structure for this material has been calculated and is in good agreement with observed material properties.

cond-mat.mtrl-sci↗