arXiv subjects

S. Das Sarma

Publications and source records attributed to S. Das Sarma.

At least 469 records · Page 26Linked to original sources

arXiv2005

Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen

We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in n-Si MOSFET and very different in n-GaAs 2D metallic systems.

cond-mat.str-el↗

arXiv2005

Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory

The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly parameter dependent such as temperature, doping, density of the carriers, and the strength of the carrier-local impurity spin exchange coupling. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism. We find that spin-disorder scattering, formation of bound state, and the population of the minority spin band are all operational in DMFT in different parameter range. We also develop a complementary Boltzmann transport theory for scattering by screened ionized impurities. The difference in the screening properties between paramagnetic ($T>T_c$) and ferromagnetic ($T<T_c$) states gives rise to the temperature dependence (increase or decrease) of resistivity, depending on the carrier density, as the system goes from the paramagnetic phase to the ferromagnetic phase. The metallic behavior below $T_c$ for optimally doped DMS samples can be explained in the Boltzmann theory by temperature dependent screening and thermal change of carrier spin polarization.

cond-mat.mtrl-sci↗

arXiv2005

The so-called two dimensional metal-insulator transition

We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms underlying the anomalous behavior of the two-dimensional effective metallic phase and the metal-insulator transition itself. We argue that a key feature of the 2D MIT physics is the long-range bare Coulombic disorder arising from the random distribution of charged impurities in the low-density 2D semiconductor structures.

cond-mat.dis-nn↗

arXiv2005

Metallic behavior in Si/SiGe 2D electron systems

We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by screened random charged Coulombic impurity centers. We obtain comprehensive agreement with existing experimental transport data, compellingly establishing that the observed 2D metallic behavior in low-density Si/SiGe systems arises from the peculiar nature of 2D screening of long-range impurity disorder. In particular, our theory correctly predicts the experimentally observed metallic temperature dependence of 2D resistivity in the fully spin-polarized system.

cond-mat.mes-hall↗

arXiv2005

Dispersion Instability in Strongly Interacting Electron Liquids

We show that the low-density strongly interacting electron liquid, interacting via the long-range Coulomb interaction, could develop a dispersion instability at a critical density associated with the approximate flattening of the quasiparticle energy dispersion. At the critical density the quasiparticle effective mass diverges at the Fermi surface, but the signature of this Fermi surface instability manifests itself away from the Fermi momentum at higher densities. For densities below the critical density the system is unstable since the quasiparticle velocity becomes negative. We show that one physical mechanism underlying the dispersion instability is the emission of soft plasmons by the quasiparticles. The dispersion instability occurs both in two and three dimensional electron liquids. We discuss the implications of the dispersion instability for experiments at low electron densities.

cond-mat.str-el↗

arXiv2005

Temperature dependent spin susceptibility in a two-dimensional metal

We consider a two-dimensional electron system with Coulomb interaction between particles at a finite temperature T. We show that the dynamic Kohn anomaly in the response function at 2K_F leads to a linear-in-T correction to the spin susceptibility, same as in systems with short-range interaction. We show that the singularity of the Coulomb interaction at q=0 does not invalidate the expansion in powers of r_s, but makes the expansion non-analytic. We argue that the linear temperature dependence is consistent with the general structure of Landau theory and can be viewed as originating from the non-analytic component of the Landau function near the Fermi surface.

cond-mat.str-el↗

arXiv2004

Temperature dependent weak field Hall resistance in 2D carrier systems

Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers. The temperature dependent 2D Hall coefficient shows striking non-monotonicity in strongly screened systems, and in particular, we qualitatively explain the recent puzzling experimental observation of a decreasing Hall resistance with increasing temperature in a dilute 2D hole system. We predict that the impurity scattering limited Hall coefficient will eventually increase with temperature at higher temperatures.

cond-mat.dis-nn↗

arXiv2004

Quasiparticle effective mass divergence in two dimensional electron systems

Within the infinite series of ring (or bubble) diagram approximation for the electronic self-energy as appropriate for the long-range Coulomb interaction, we calculate the density-dependent T=0 Fermi liquid quasiparticle effective mass renormalization in two dimensional (2D) electron systems in the random-phase-approximation (RPA). We find that the quasiparticle effective mass increases very strongly with increasing $r_s$, exhibiting an unexpected divergence at a critical $r_s$ value ($\sim 16$ in the ideal 2D system). We discuss the possibility for and the consequences of such an interaction induced effective mass divergence as the electron density decreases, and critically comment on the likely theoretical scenarios which could lead to such a low density effective mass divergence in electron liquids.

cond-mat.str-el↗

arXiv2004

Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence

We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multi-valley structure of the Si conduction band, we show that inter-valley quantum interference has important consequences for single-qubit operations of P$_2^+$ charge qubits. In particular, the valley interference leads to a tunnel-coupling strength distribution centered around zero. On the other hand, we find that the Si bandstructure does not dramatically affect the electron-phonon coupling and consequently, qubit coherence. We also critically compare charge qubit properties for Si:P$_2^+$ and GaAs double quantum dot quantum computer architectures.

cond-mat.mes-hall↗

arXiv2004

Spin quantum computation in silicon nanostructures

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals because of their long spin coherence times due to their limited interactions with their environments. For these spin qubits, shallow donor exchange gates are frequently invoked to perform two-qubit operations. We discuss in this review a particularly important spin decoherence channel, and bandstructure effects on the exchange gate control. Specifically, we review our work on donor electron spin spectral diffusion due to background nuclear spin flip-flops, and how isotopic purification of silicon can significantly enhance the electron spin dephasing time. We then review our calculation of donor electron exchange coupling in the presence of degenerate silicon conduction band valleys. We show that valley interference leads to orders of magnitude variations in electron exchange coupling when donor configurations are changed on an atomic scale. These studies illustrate the substantial potential that donor electron/nuclear spins in silicon have as candidates for qubits and simultaneously the considerable challenges they pose. In particular, our work on spin decoherence through spectral diffusion points to the possible importance of isotopic purification in the fabrication of scalable solid state quantum computer architectures. We also provide a critical comparison between the two main proposed spin-based solid state quantum computer architectures, namely, shallow donor bound states in Si and localized quantum dot states in GaAs.

cond-mat.mes-hall↗

arXiv2004

Spin swap gate in the presence of qubit inhomogeneity in a double quantum dot

We study theoretically the effects of qubit inhomogeneity on the quantum logic gate of qubit swap, which is an integral part of the operations of a quantum computer. Our focus here is to construct a robust pulse sequence for swap operation in the simultaneous presence of Zeeman inhomogeneity for quantum dot trapped electron spins and the finite-time ramp-up of exchange coupling in a double dot. We first present a geometric explanation of spin swap operation, mapping the two-qubit operation onto a single-qubit rotation. We then show that in this geometric picture a square-pulse-sequence can be easily designed to perform swap in the presence of Zeeman inhomogeneity. Finally, we investigate how finite ramp-up times for the exchange coupling $J$ negatively affect the performance of the swap gate sequence, and show how to correct the problems numerically.

cond-mat.mes-hall↗

arXiv2004

Double quantum dot turnstile as an electron spin entangler

We study the conditions for a double quantum dot system to work as a reliable electron spin entangler, and the efficiency of a beam splitter as a detector for the resulting entangled electron pairs. In particular, we focus on the relative strengths of the tunneling matrix elements, the applied bias and gate voltage, the necessity of time-dependent input/output barriers, and the consequence of considering wavepacket states for the electrons as they leave the double dot to enter the beam splitter. We show that a double quantum dot turnstile is, in principle, an efficient electron spin entangler or entanglement filter because of the exchange coupling between the dots and the tunable input/output potential barriers, provided certain conditions are satisfied in the experimental set-up.

cond-mat.mes-hall↗

arXiv2004

Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si conduction band, obtained from {\it ab initio} calculations within the density-functional and pseudopotential frameworks. Inter-valley interference between the conduction-band-edge states of Si leads to oscillatory behavior in the charge distribution of one-electron bound states and in the exchange coupling in two-electron states. The behavior in the donor electron charge distribution is strongly influenced by interference from the plane-wave and periodic parts of the Bloch functions. For two donors, oscillations in the exchange coupling calculated within the Heitler-London (HL) approach are due to the plane-wave parts of the Bloch functions alone, which are pinned to the impurity sites. The robustness of this result is assessed by relaxing the phase pinning to the donor sites. We introduce a more general theoretical scheme, the floating-phase HL, from which the previously reported donor exchange oscillatory behavior is qualitatively and quantitatively confirmed. The floating-phase formalism provides a ``handle'' on how to theoretically anticipate the occurrence of oscillatory behavior in electronic properties associated with electron bound states in more general confining potentials, such as in quantum dots.

cond-mat.mes-hall↗

arXiv2004

Mapping spatial persistent large deviations of nonequilibrium surface growth processes onto the temporal persistent large deviations of stochastic random walk processes

Spatial persistent large deviations probability of surface growth processes governed by the Edwards-Wilkinson dynamics, $P_x(x,s)$, with $-1 \leq s \leq 1$ is mapped isomorphically onto the temporal persistent large deviations probability $P_t(t,s)$ associated with the stochastic Markovian random walk problem. We show using numerical simulations that the infinite family of spatial persistent large deviations exponents $θ_x(s)$ characterizing the power law decay of $P_x(x,s)$ agrees, as predicted on theoretical grounds by Majumdar and Bray [Phys. Rev. Lett. {\bf 86}, 3700 (2001)] with the numerical measurements of $θ_t(s)$, the continuous family of exponents characterizing the long time power law behavior of $P_t(t,s)$. We also discuss the simulations of the spatial persistence probability corresponding to a discrete model in the Mullins-Herring universality class, where our discrete simulations do not agree well with the theoretical predictions perhaps because of the severe finite-size corrections which are known to strongly inhibit the manifestation of the asymptotic continuum behavior in discrete models involving large values of the dynamical exponent and the associated extremely slow convergence to the asymptotic regime.

cond-mat.stat-mech↗

arXiv2004

Chirality in Quantum Computation with Spin Cluster Qubits

We study corrections to the Heisenberg interaction between several lateral, single-electron quantum dots. We show, using exact diagonalization, that three-body chiral terms couple triangular configurations to external sources of flux rather strongly. The chiral corrections impact single qubit encodings utilizing loops of three or more Heisenberg coupled quantum dots.

cond-mat.mes-hall↗

arXiv2004

Silicon quantum computation based on magnetic dipolar coupling

A dipolar gate alternative to the exchange gate based Kane quantum computer is proposed where the qubits are electron spins of shallow group V donors in silicon. Residual exchange coupling is treated as gate error amenable to quantum error correction, removing the stringent requirements on donor positioning characteristic of all silicon exchange-based implementations [B. Koiller et al., Phys. Rev. Lett. 88, 027903 (2002)]. Contrary to common speculation, such a scheme is scalable with no overhead in gating time even though it is based on long-range dipolar inter-qubit coupling.

cond-mat.mes-hall↗

arXiv2004

In-plane magnetodrag in dilute bilayer two-dimensional systems: a Fermi liquid theory

Motivated by recent experimental results reporting anomalous drag resistance behavior in dilute bilayer two-dimensional (2D) hole systems in the presence of a magnetic field parallel to the 2D plane, we have carried out a many-body Fermi liquid theory calculation of bilayer magnetodrag comparing it to the corresponding single layer magnetoresistance. In qualitative agreement with experiment we find relatively similar behavior in our calculated magnetodrag and magnetoresistance arising from the physical effects of screening being similarly modified ("suppressed") by carrier spin polarization (at "low" field) and the conductivity effective mass being similarly modified ("enhanced") by strong magneto-orbital correction (at "high" fields) in both cases. We critically discuss agreement and disagreement between our theory and the experimental results, concluding that the magnetodrag data are qualitatively consistent with the Fermi liquid theory.

cond-mat.str-el↗

arXiv2004

Universal temperature corrections to Fermi liquid theory in an interacting electron system

We calculate analytically the effective mass and the quasiparticle renormalization factor in an electron liquid with long-range Coulomb interactions between electrons in two and three dimensions in the leading order density expansion. We concentrate on the temperature dependence of the effective mass in the limit (T/T_F)<<r_s<<1 and show that the leading temperature correction is linear in two dimensions and proportional to T^2 Log(1/T) in three dimensions (positive in both cases). We explicitly calculate the coefficients, which are shown to be universal density independent parameters of the order of unity. The singular temperature corrections are due to the singularity in the dynamic dielectric function. In two dimensions, we predict a non-monotonic effective mass temperature dependence and find that the maximum occurs at a temperature T* ~ (T_F r_s)/Log(1/r_s). We also study the quasiparticle renormalization factor in both three and two dimensions.

cond-mat.str-el↗