arXiv subjects

S. Das Sarma

Publications and source records attributed to S. Das Sarma.

At least 127 records · Page 7Linked to original sources

arXiv2015

Exponential Orthogonality Catastrophe in Single-Particle and Many-Body Localized Systems

We investigate the statistical orthogonality catastrophe (StOC) in single-particle and many-body localized systems by studying the response of the many-body ground state to a local quench. Using scaling arguments and exact numerical calculations, we establish that the StOC gives rise to a wave function overlap between the pre- and post-quench ground states that has an \emph{exponential} decay with the system size, in sharp contrast to the well-known power law Anderson orthogonality catastrophe in metallic systems. This exponential decay arises from a statistical charge transfer process where a particle can be effectively "transported" to an arbitrary lattice site. In a many-body localized phase, this non-local transport and the associated exponential StOC phenomenon persist in the presence of interactions. We study experimental consequences of the exponential StOC on Loschmidt echo and spectral function, establishing that this phenomenon should be observable in cold atomic experiments through Ramsey interference and radio-frequency spectroscopy.

cond-mat.str-el↗

arXiv2015

Many-body effects and ultraviolet renormalization in three-dimensional Dirac materials

We develop a theory for electron-electron interaction-induced many-body effects in three dimensional (3D) Weyl or Dirac semimetals, including interaction corrections to the polarizability, electron self-energy, and vertex function, up to second order in the effective fine structure constant of the Dirac material. These results are used to derive the higher-order ultraviolet renormalization of the Fermi velocity, effective coupling, and quasiparticle residue, revealing that the corrections to the renormalization group (RG) flows of both the velocity and coupling counteract the leading-order tendencies of velocity enhancement and coupling suppression at low energies. This in turn leads to the emergence of a critical coupling above which the interaction strength grows with decreasing energy scale. In addition, we identify a range of coupling strengths below the critical point in which the Fermi velocity varies non-monotonically as the low-energy, non-interacting fixed point is approached. Furthermore, we find that while the higher-order correction to the flow of the coupling is generally small compared to the leading order, the corresponding correction to the velocity flow carries an additional factor of the Dirac cone flavor number (the multiplicity of electron species, e.g. ground-state valley degeneracy arising from the band structure) relative to the leading-order result. Thus, for materials with a larger multiplicity, the regime of velocity non-monotonicity is reached for modest values of the coupling strength.

cond-mat.mes-hall↗

arXiv2015

Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal

We show that the emergence of the axial anomaly is a universal phenomenon for a generic three dimensional metal in the presence of parallel electric ($E$) and magnetic ($B$) fields. In contrast to the expectations of the classical theory of magnetotransport, this intrinsically quantum mechanical phenomenon gives rise to the longitudinal magnetoresistance for any three dimensional metal. However, the emergence of the axial anomaly does not guarantee the existence of negative longitudinal magnetoresistance. We show this through an explicit calculation of the longitudinal magnetoconductivity in the quantum limit using the Boltzmann equation, for both short-range neutral and long-range ionic impurity scattering processes. We demonstrate that the ionic scattering contributes a large positive magnetoconductivity $\propto B^2$ in the quantum limit, which can cause a strong negative magnetoresistance for any three dimensional or quasi-two dimensional metal. In contrast, the finite range neutral impurities and zero range point impurities can lead to both positive and negative longitudinal magnetoresistance depending on the underlying band structure. In the presence of both neutral and ionic impurities, the longitudinal magnetoresistance of a generic metal in the quantum limit initially becomes negative, and ultimately becomes positive after passing through a minimum. We discuss in detail the qualitative agreement between our theory and recent observations of negative longitudinal magnetoresistance in Weyl semimetals TaAs and TaP, Dirac semimetals Na$_3$Bi, Bi$_{1-x}$Sb$_x$, and ZrTe$_5$, and quasi-two dimensional metals PdCoO$_2$, $α$-(BEDT-TTF)$_2$I$_3$ which do not possess any bulk three dimensional Dirac or Weyl quasiparticles.

cond-mat.mes-hall↗

arXiv2015

Anderson localization and the quantum phase diagram of three dimensional disordered Dirac semimetals

We study the quantum phase diagram of a three dimensional non-interacting Dirac semimetal in the presence of either quenched axial or scalar potential disorder, by calculating the average and the typical density of states as well as the inverse participation ratio using numerically exact methods. We show that as a function of the disorder strength a half-filled (i.e. undoped) Dirac semimetal displays three distinct ground states, namely an incompressible semimetal, a compressible diffusive metal, and a localized Anderson insulator, in stark contrast to a conventional dirty metal that only supports the latter two phases. We establish the existence of two distinct quantum critical points, which respectively govern the semimetal-metal and the metal-insulator quantum phase transitions and also reveal their underlying multifractal nature. Away from half-filling the (doped) system behaves as a diffusive metal that can undergo Anderson localization only, which is shown by determining the mobility edge and the phase diagram in terms of energy and disorder.

cond-mat.dis-nn↗

arXiv2015

Screening and transport in 2D semiconductor systems at low temperatures

Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In the current work, we derive a number of simple analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic (i.e., arising purely from electronic effects and not from phonon scattering) metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the 2D resistivity can only be observed in high-quality and low-disorder (i.e., high-mobility) 2D samples and also why some high-quality 2D materials (i.e., n-GaAs) manifest much weaker metallicity than other materials. We also discuss effects of interaction and disorder on the 2D screening properties in this context as well as compare 2D and 3D screening functions to comment why such a strong intrinsic temperature dependence arising from screening cannot occur in 3D metallic carrier transport. Experimentally verifiable predictions are made about the quantitative magnitude of the maximum possible low-temperature metallicity in 2D systems and the scaling behavior of the temperature scale controlling the quantum to classical crossover where the system reverses the sign of the temperature derivative of the 2D resistivity at high temperatures.

cond-mat.mes-hall↗

arXiv2015

The 2D metal-insulator transition as a strong localization induced crossover phenomenon

Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. dρ/dT changes its sign at some nonuniversal sample-dependent critical carrier density n_c separating an effective 2D metal (dρ/dT >0) for n>n_c from an effective 2D insulator (dρ/dT<0) for n<n_c. We study the 2D MIT phenomenon as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, k_F l=1. Calculating the quantum mean free path (l) in the effective metallic phase from a realistic transport theory including disorder scattering effects, we solve the integral equation defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density n_c as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the n_c is the temperature and density dependence of the Coulomb disorder. Our calculated results for the crossover n_c appear to be in qualitative and semi-quantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We provide some results for graphene where a low-temperature 2D MIT becomes possible in the presence of intervalley scattering. We also provide an extensive comparison with the theoretical results obtained on the basis of 2D MIT being considered as a percolation transition.

cond-mat.mes-hall↗

arXiv2015

Robust quantum control using smooth pulses and topological winding

The greatest challenge in achieving the high level of control needed for future technologies based on coherent quantum systems is the decoherence induced by the environment. Here, we present an analytical approach that yields explicit constraints on the driving field which are necessary and sufficient to ensure that the leading-order noise-induced errors in a qubit's evolution cancel exactly. We derive constraints for two of the most common types of noise that arise in qubits: slow fluctuations of the qubit energy splitting and fluctuations in the driving field itself. By theoretically recasting a phase in the qubit's wavefunction as a topological winding number, we can satisfy the noise-cancelation conditions by adjusting driving field parameters without altering the target state or quantum evolution. We demonstrate our method by constructing robust quantum gates for two types of spin qubit: phosphorous donors in silicon and nitrogen-vacancy centers in diamond.

quant-ph↗

arXiv2015

Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate voltage to a 2D hole system at negative gate voltage. The electron (hole) conductivity manifests strong (moderate) metallic temperature dependence with the conductivity decreasing by a factor of 8 (2) between 0.3 K and 4.2 K with the peak electron mobility ($\sim 18$ m$^2$/Vs) being roughly 20 times larger than the peak hole mobility (in the same sample). Our theory explains the data well using RPA screening of background Coulomb disorder, establishing that the observed metallicity is a direct consequence of the strong temperature dependence of the effective screened disorder.

cond-mat.mes-hall↗

arXiv2015

Universal spin-triplet superconducting correlations of Majorana fermions

We establish that Majorana fermions on the boundary of topological superconductors have only spin-triplet superconducting correlations independent of whether the bulk superconducting gap is spin singlet or triplet. This is universal for time-reversal broken (respected) topological superconductors (TSCs) with an odd number of (pairs of) Majorana fermions on the boundary. Consequently, resonant Andreev reflection induced by Majorana fermions only occurs in spin-triplet channels and always injects spin-triplet Cooper pairs into the leads. This spin-triplet condensate results in a spin-orbit coupling (SOC) controlled oscillatory critical current without a $0$-$π$ transition in the TSC/SOC-semiconductor/TSC Josephson junction. The observation of this unique current-phase relation can serve as the definitive signal for Majorana fermions. Our study shows a technique for manipulating Majorana fermions based on their spin-triplet superconducting correlations.

cond-mat.supr-con↗

arXiv2015

Damping of long wavelength collective modes in spinor Bose-Fermi mixtures

Using an effective field theory we describe the low energy bosonic excitations in a three dimensional ultra-cold mixture of spin-1 bosons and spin-1/2 fermions. We establish an interesting fermionic excitation induced generic damping of the usual undamped long wavelength bosonic collective Goldstone modes. Two states with bosons forming either a ferromagnetic or polar superfluid are studied. The linear dispersion of the bosonic Bogoliubov excitations is preserved with a renormalized sound velocity. For the polar superfluid we find both gapless modes (density and spin) are damped, whereas in the ferromagnetic superfluid we find the density (spin) mode is (not) damped. We argue quite generally that this holds for any mixture of bosons and fermions that are coupled through at least a density-density interaction. We discuss the implications of our many-body interaction results for experiments on Bose-Fermi mixtures.

cond-mat.quant-gas↗

arXiv2015

Substrate-induced Majorana renormalization in topological nanowires

We theoretically consider the substrate-induced Majorana localization length renormalization in nanowires in contact with a bulk superconductor in the strong tunnel-coupled regime, showing explicitly that this renormalization depends strongly on the transverse size of the one-dimensional nanowires. For metallic (e.g. Fe on Pb) or semiconducting (e.g. InSb on Nb) nanowires, the renormalization effect is found to be very strong and weak respectively because the transverse confinement size in the two situations happens to be 0.5nm (metallic nanowire) and 20nm (semiconducting nanowire). Thus, the Majorana localization length could be very short (long) for metallic (semiconducting) nanowires even for the same values of all other parameters (except for the transverse wire size). We also show that any tunneling conductance measurements in such nanowires, carried out at temperatures and/or energy resolutions comparable to the induced superconducting energy gap, cannot distinguish between the existence of the Majorana modes or ordinary subgap fermionic states since both produce very similar broad and weak peaks in the subgap tunneling conductance independent of the localization length involved. Only low temperature (and high resolution) tunneling measurements manifesting sharp zero bias peaks can be considered to be signatures of Majorana modes in topological nanowires.

cond-mat.supr-con↗

arXiv2015

Interacting Dirac liquid in three-dimensional semimetals

We study theoretically the properties of the interacting Dirac liquid, a novel three-dimensional many-body system which was recently experimentally realized and in which the electrons have a chiral linear relativistic dispersion and a mutual Coulomb interaction. We find that the "intrinsic" Dirac liquid, where the Fermi energy lies exactly at the nodes of the band dispersion, displays unusual Fermi liquid properties similar to graphene, whereas the "extrinsic" system with finite detuning or doping behaves as a standard Landau Fermi liquid. We present analytical and numerical results for the self-energy and spectral function based on both Hartree-Fock and the random phase approximation (RPA) theories and compute the quasiparticle lifetime, residue, and renormalized Fermi velocity of the extrinsic Dirac liquid. A full numerical calculation of the extrinsic RPA spectral function indicates that the Fermi liquid description breaks down for large-energy excitations. Furthermore, we find an additional plasmaron quasiparticle sideband in the spectral function which is discontinuous around the Fermi energy. Our predictions should be observable in ARPES and STM measurements.

cond-mat.mes-hall↗

arXiv2015

Plasmon signature in Dirac-Weyl liquids

We consider theoretically as a function of temperature the plasmon mode arising in three-dimensional Dirac liquids, i.e., systems with linear chiral relativistic single-particle dispersion, within the random phase approximation. We find that whereas no plasmon mode exists in the intrinsic (undoped) system at zero temperature, there is a well-defined finite-temperature plasmon with superlinear temperature dependence, rendering the plasmon dispersion widely tunable with temperature. The plasmon dispersion contains a logarithmic correction due to the ultraviolet-logarithmic renormalization of the electron charge, manifesting a fundamental many-body interaction effect as in quantum electrodynamics. The plasmon dispersion of the extrinsic (doped) system displays a minimum at finite temperature before it crosses over to the superlinear intrinsic behavior at higher temperature, implying that the high-temperature plasmon is a universal feature of Dirac liquids irrespective of doping. This striking characteristic temperature dependence of intrinsic Dirac plasmons along with the logarithmic renormalization is a unique manifestation of the three-dimensional relativistic Dirac nature of quasiparticle excitations and serves as an experimentally observable signature of three-dimensional Dirac materials.

cond-mat.mes-hall↗

arXiv2015

Tunneling transport in NSN junctions made of Majorana nanowires across the topological quantum phase transition

We theoretically consider transport properties of a normal metal (N)- superconducting semiconductor nanowire (S)-normal metal (N) structure (NSN) in the context of the possible existence of Majorana bound states in disordered semiconductor-superconductor hybrid systems in the presence of spin-orbit coupling and Zeeman splitting induced by an external magnetic field. We study in details the transport signatures of the topological quantum phase transition as well as the existence of the Majorana bound states in the electrical transport properties of the NSN structure. Our theory includes the realistic nonperturbative effects of disorder, which is detrimental to the topological phase (eventually suppressing the superconducting gap completely), and the effects of the tunneling barriers (or the transparency at the tunneling NS contacts), which affect (and suppress) the zero bias conductance peak associated with the zero energy Majorana bound states. We show that in the presence of generic disorder and barrier transparency the interpretation of the zero bias peak as being associated with the Majorana bound state is problematic since the nonlocal correlations between the two NS contacts at two ends may not manifest themselves in the tunneling conductance through the whole NSN structure. We establish that a simple modification of the standard transport measurements using conductance differences (rather than the conductance itself as in a single NS junction) as the measured quantity can allow direct observation of the nonlocal correlations inherent in the Majorana bound states and enables the mapping out of the topological phase diagram (even in the presence of considerable disorder) by precisely detecting the topological quantum phase transition point.

cond-mat.mes-hall↗

arXiv2015

Improving the gate fidelity of capacitively coupled spin qubits

Capacitively coupled semiconductor spin qubits hold promise as the building blocks of a scalable quantum computing architecture with long-range coupling between distant qubits. However, the two-qubit gate fidelities achieved in experiments to date have been severely limited by decoherence originating from charge noise and hyperfine interactions with nuclear spins, and are currently unacceptably low for any conceivable multi-qubit gate operations. Here, we present control protocols that implement two-qubit entangling gates while substantially suppressing errors due to both types of noise. These protocols are obtained by making simple modifications to control sequences already used in the laboratory and should thus be easy enough for immediate experimental realization. Together with existing control protocols for robust single-qubit gates, our results constitute an important step toward scalable quantum computation using spin qubits in semiconductor platforms.

cond-mat.mes-hall↗

arXiv2015

Charge transport in gapless chiral electron systems with arbitrary band dispersion

Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and non-chiral) systems in the presence of resistive scattering due to static disorder arising from random quenched impurities in the background. We obtain the dependence of the Boltzmann conductivity on carrier density and temperature for arbitrary band dispersion in arbitrary dimensionality assuming long-range ($\sim 1/r$) Coulomb disorder and zero-range white noise disorder [$\sim δ(r)$]. We establish that the temperature and the density dependence of the Boltzmann conductivity manifests scaling behaviors determining respectively the intrinsic semimetallic or the extrinsic metallic property of the gapless system. Our results apply equally well to both chiral and non-chiral gapless systems, and provide a qualitative understanding of the dependence of the Boltzmann conductivity on the band dispersion in arbitrary dimensionality.

cond-mat.dis-nn↗

arXiv2015

Transport in two-dimensional modulation doped semiconductor structures

We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultra high-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultra-pure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

cond-mat.mes-hall↗

arXiv2015

Nearest neighbor tight binding models with an exact mobility edge in one dimension

We investigate localization properties in a family of deterministic (i.e. no disorder) nearest neighbor tight binding models with quasiperiodic onsite modulation. We prove that this family is self-dual under a generalized duality transformation. The self-dual condition for this general model turns out to be a simple closed form function of the model parameters and energy. We introduce the typical density of states as an order parameter for localization in quasiperiodic systems. By direct calculations of the inverse participation ratio and the typical density of states we numerically verify that this self-dual line indeed defines a mobility edge in energy separating localized and extended states. Our model is a first example of a nearest neighbor tight binding model manifesting a mobility edge protected by a duality symmetry. We propose a realistic experimental scheme to realize our results in atomic optical lattices and photonic waveguides.

cond-mat.dis-nn↗