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S. Davari

Publications and source records attributed to S. Davari.

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Advances and opportunities for automated robotic preparation of 2D materials and fabrication of 2D heterostructures

The mechanical exfoliation, transfer, and stacking of 2D atomic sheets from van der Waals crystals synergize to enable atomic layer-by-atomic layer engineering of 2D heterostructures with tailored properties that yield new exotic phenomena and states of matter. With the huge variety of van der Waals materials available, there is a limitless number of ways to couple 2D semiconducting, insulating, magnetic, metallic, topological, etc. systems with one another. Experimental exploration of this vast space starts with the fabrication of high-quality 2D heterostructures, which is commonly performed manually, relying on humans to execute delicate operations. Many scientific advancements have been achieved in this manner, revealing immense potential for further discovery and innovation of increasingly sophisticated 2D heterostructures. However, soon, the complexity of the 2D heterostructures that define the scientific state-of-the-art will exceed the capabilities of manual fabrication. Therefore, the demand for robotic instruments for preparing 2D materials and fabricating complex 2D heterostructures with greater quality, at higher rates, and with better reproducibility is increasing. This review covers recent scientific, instrumentation, and processing advances rising to this challenge. Robotic instruments for mechanical exfoliation, optical metrology of 2D crystallites, stacking, as well as advancements in supporting technologies such as organic-free stamps, vacuum-compatible processing tools, and artificial intelligence (AI) are covered. Looking forward, a new generation of AI-driven, automated advanced manufacturing tools is anticipated to emerge from these current advancements. These new tools will bridge the current state-of-the-art of 2D heterostructure science to new scientific frontiers defined by precision fabrication of high-quality, complex, many-layer 2D heterostructure systems.

cond-mat.mtrl-sci

Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition

We present strain tuning of excitonic emission in monolayer MoSe$_2$ by using a high-temperature physical vapor deposition (PVD). The use of two amorphous substrates, Si$_{3}$N$_{4}$ and SiO$_{2}$, provides two setpoints to induce distinct amounts of \textit{biaxial} tensile strain determined by a thermal expansion mismatch between the monolayer and the substrate. The tuning rate of the $A$-exciton transition energy is found to be 103 meV/\% by photoluminescence (PL), which represents the highest value realized by biaxial strain in transition metal dichalcogenides. The biaxial nature of the tensile strain is confirmed by polarization-resolved second harmonic generation, which reveals unperturbed in-plane three-fold symmetry of the monolayer. Furthermore, a softening of $A_\mathrm{1g}$ out-of-plane lattice vibration is identified in the Raman spectroscopy, which is known to be insignificant for uniaxial strain. Concomitantly, PL mapping of our PVD monolayers demonstrates (i) larger strain occurs in the interior of the mono-domain islands compared to the edges and (ii) the absence of island-size dependence in the magnitude of induced strain. Our results demonstrate an effective path towards strain engineering of excitons by using growth substrates, which holds great promise as a building block for future optoelectronic applications.

cond-mat.mtrl-sci

Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe$_2$

We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb blockade regime is consistent with transport through a single level, and excited state transport through the dots was observed at temperatures up to 10 K. For adjacent charge states of a bilayer WSe$_2$ dot, magnetic field dependence of excited state energies was used to estimate $g$-factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe$_2$ for application as qubits.

cond-mat.mes-hall