arXiv subjects

S. De Franceschi

Publications and source records attributed to S. De Franceschi.

43 records · Page 3Linked to original sources

arXiv2002

Kondo effect out of equilibrium in a mesoscopic device

We study the non-equilibrium regime of the Kondo effect in a quantum dot laterally coupled to a narrow wire. We observe a split Kondo resonance when a finite bias voltage is imposed across the wire. The splitting is attributed to the creation of a double-step Fermi distribution function in the wire. Kondo correlations are strongly suppressed when the voltage across the wire exceeds the Kondo temperature. A perpendicular magnetic field enables us to selectively control the coupling between the dot and the two Fermi seas in the wire. Already at fields of order 0.1 T only the Kondo resonance associated with the strongly coupled reservoir survives.

cond-mat.mes-hall↗

arXiv2001

Two-stage Kondo effect in a quantum dot at high magnetic field

We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.

cond-mat.mes-hall↗

arXiv2001

Electro-magnetic Aharonov-Bohm effect in a 2-D electron gas ring

We define a mesoscopic ring in a 2-dimensional electron gas (2DEG) interrupted by two tunnel barriers, enabling us to apply a well-defined potential difference between the two halves of the ring. The electron interference in the ring is modified using a perpendicular magnetic field and a bias voltage. We observe clear Aharonov-Bohm oscillations up to the quantum Hall regime as a function of both parameters. The electron travel time between the barriers is found to increase with the applied magnetic field. Introducing a scattering model, we develop a new method to measure the non-equilibrium electron dephasing time, which becomes very short at high voltages and magnetic fields. The relevance of electron-electron interactions is discussed.

cond-mat.mes-hall↗

arXiv2000

Electron Cotunneling in a Semiconductor Quantum Dot

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.

cond-mat.mes-hall↗

arXiv2000

The Kondo Effect in the Unitary Limit

We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit value. We compare the experimental Kondo temperature with the theoretical predictions for the spin-1/2 Anderson impurity model. Excellent agreement is found throughout the Kondo regime. Phase coherence is preserved when a Kondo quantum dot is included in one of the arms of an Aharonov-Bohm ring structure and the phase behavior differs from previous results on a non-Kondo dot.

cond-mat.mes-hall↗

arXiv2000

Kondo effect in an integer-spin quantum dot

The Kondo effect is a key many-body phenomenon in condensed matter physics. It concerns the interaction between a localised spin and free electrons. Discovered in metals containing small amounts of magnetic impurities, it is now a fundamental mechanism in a wide class of correlated electron systems. Control over single, localised spins has become relevant also in fabricated structures due to the rapid developments in nano-electronics. Experiments have already demonstrated artificial realisations of isolated magnetic impurities at metallic surfaces, nanometer-scale magnets, controlled transitions between two-electron singlet and triplet states, and a tunable Kondo effect in semiconductor quantum dots. Here, we report an unexpected Kondo effect realised in a few-electron quantum dot containing singlet and triplet spin states whose energy difference can be tuned with a magnetic field. This effect occurs for an even number of electrons at the degeneracy between singlet and triplet states. The characteristic energy scale is found to be much larger than for the ordinary spin-1/2 case.

cond-mat.mes-hall↗

arXiv1999

Andreev reflection in engineered Al/Si/InGaAs(001) junctions

Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing the realization of truly Ohmic non-alloyed contacts in low-doped and low-In content InGaAs/Si/Al junctions. It is shown that this technique is ideally suited for the fabrication of high-transparency superconductor-semiconductor junctions. To this end magnetotransport characterization of Al/Si/InGaAs low-n-doped single junctions below the Al critical temperature is presented. Our measurements show Andreev-reflection dominated transport corresponding to junction transparency close to the theoretical limit due to Fermi-velocity mismatch

cond-mat.supr-con↗