arXiv subjects

S. Dhara

Publications and source records attributed to S. Dhara.

At least 19 recordsLinked to original sources

arXiv2022

Probing spin dynamics of 2D excitons with twisted light

We propose a mechanism of intravalley spin-flip scattering in spin-valley coupled two dimensional systems by transferring momentum of light into exciton center of mass using optical vortex (OV) beams. By varying the dispersion of light using the topological charge of OV beam, we demonstrate a unique approach to control the intra-valley spin-flip scattering rate of excitons. From our photoluminescence measurements, we demonstrate that the intra-valley scattering rate in W-based TMDs can be tuned externally by OV beams. Variation of photoluminescence intensity with topological charges shows a crossover temperature (> 150 K), indicating competitions among time scales involving radiative recombination, spin-flip scattering, and thermal relaxations. Our proposed technique utilizing a structured light beam can open up a new approach to explore the physics of excitons in 2D systems.

cond-mat.mes-hall↗

arXiv2022

Studies on tuning surface electronic properties of hydrogenated diamond by oxygen functionalization

Ultra-wide bandgap and the absence of shallow dopants are the major challenges in realizing diamond based electronics. However, the surface functionalization offers an excellent alternative to tune electronic structure of diamonds. Herein, we report on tuning the surface electronic properties of hydrogenated polycrystalline diamond films through oxygen functionalization. The hydrogenated diamond (HD) surface transforms from hydrophobic to hydrophilic nature and the sheet resistance increases from ~ 8 kohms/sq. to over 10 Gohms/sq. with progressive ozonation. The conductive atomic force microscopic (c-AFM) studies reveal preferential higher current conduction on selective grain interiors (GIs) than that of grain boundaries confirming the surface charge transfer doping on these HDs. In addition, the local current conduction is also found to be much higher on (111) planes as compared to (100) planes on pristine and marginally O-terminated HD. However, there is no current flow on the fully O-terminated diamond (OD) surface. Further, X-ray photoelectron spectroscopic (XPS) studies reveal a redshift in binding energy (BE) of C1s on pristine and marginally O-terminated HD surfaces indicating surface band bending whilst the BE shifts to higher energy for OD. Moreover, XPS analysis also corroborate c-AFM study for the possible charge transfer doping mechanism on the diamond films which results in high current conduction on GIs of pristine and partially O-terminated HDs.

cond-mat.mtrl-sci↗

arXiv2021

Direct microscopic evidence of shear induced graphitization of ultrananocrystalline diamond films

The origin of ultralow friction and high wear resistance in ultrananocrystalline diamond (UNCD) films is still under active debate because of the perplexed tribochemistry at the sliding interface. Herein, we report a comparative study on surface topography and nanoscale friction of tribofilms, in wear tracks of two sets of UNCD films having different structural characteristics. Despite both the films display ultralow coefficient of friction, the UNCD films grown under Ar atmosphere (UNCDAr) exhibit a high wear resistance while the wear rate is higher for the films grown in N2 (UNCDN). Frictional force microscopic (FFM) investigations clearly reveal the manifestation of shear induced graphitization on both the films. However, the wear track of UNCDAr films have a large network of a few layer graphene (FLG) structures over the amorphous carbon tribofilms while only isolated clusters of FLG structures are present in the wear track of UNCDN films. Here, we demonstrate the direct micro-/nanoscopic evidence for the formation of large network of ~ 0.8 - 6 nm thick FLG structures, as a consequence of shear induced graphitization and discuss their decisive role in ultralow friction and wear.

cond-mat.mtrl-sci↗

arXiv2019

Si and N - vacancy color centers in discrete diamond nanoparticles: Raman and fluorescence spectroscopic studies

The present study reports on an innovative method to prepare discrete diamond nanoparticles or nanodiamonds (NDs) with high structural and optical quality through top-down approach by controlled oxidation of pre-synthesized nanocrystalline diamond (NCD) film. These NDs are studied for their structural and optical properties using atomic force microscopy (AFM), Raman and fluorescence (FL) spectroscopy. While AFM analysis confirms uniform distribution of discrete NDs with different sizes varying from a few tens of nanometers to about a micron, spectroscopic investigations reveal the presence of impurity - vacancy related color centers exhibiting FL at 637 and 738 nm as a function of particle size. In addition, an intense emission originating from vacancy centers associated with N and Si (SiV-) is observed for all NDs at the temperature close to liquid nitrogen. A detailed spectral analysis is carried out on the structural defects in these NDs. The full width at half maximum of diamond Raman band ( ~ 1332 cm-1) is found to be as narrow as 1.5 cm-1 which reveals the superior structural quality of these NDs. Further, mapping of diamond Raman and FL spectra of SiV- confirm the uniform distribution of NDs throughout the substrate. The narrow line widths and a minimal shift in peak positions of Raman and FL spectra endorse this aspect.

cond-mat.mtrl-sci↗

arXiv2018

Nano-molar to milli-molar level Ag (I) determination using absorption of light by ZnS QDs without organic ligand

Despite of useful applications of Ag, it is hazardous to health and environment and hence early detection is required. Crystal defects influencing optical property is less likely utilized for Ag detection using prevalent UV-Vis technique. Quantum dots (QDs) ZnS prepared by soft chemical route are exploited for the detection of Ag ions in aqueous solution for nM to mM concentrations. UV-Vis and photoluminescence (PL) measurements reveal quantum confinement effect and presence of defects in ZnS nanoparticles (NPs). Controlled synthesis of ZnS NPs allows appearance of defects related peak at 400-550 nm in UV-Vis spectra. A plausible mechanism is presented and elucidated by XRD and PL studies for chemical interaction between ZnS with Ag ion. The interaction affects prominently and defects related absorption of ZnS NPs and allows single step Ag ion detection in aqueous medium. This absorption method is extended to other ions (Na, K, Mg, Ca, Ba ions) including S prone heavy and toxic ions like Pb, Hg and Cd. Among them, Ag ion shows the best response with ZnS NPs. This demonstration using a portable and cost effective technique with no organic component opens up possibility for other inorganic materials.

cond-mat.mtrl-sci↗

arXiv2017

Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance - plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as dilutants. Field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy are used to study the structural and morphological features of the grown films. Herein, we demonstrate, how the morphology can be tuned from planar to vertical structure using single control parameter namely, dilution of CH4 with Ar and/or H2. Our results show that the competitive growth and etching processes dictate the morphology of the NGSs. While Ar-rich composition favors vertically oriented graphene nanosheets, H2-rich composition aids growth of planar films. Raman analysis reveals dilution of CH4 with either Ar or H2 or in combination helps to improve the structural quality of the films. Line shape analysis of Raman 2D band shows nearly symmetric Lorentzian profile which confirms the turbostratic nature of the grown NGSs. Further, this aspect is elucidated by HRTEM studies by observing elliptical diffraction pattern. Based on these experiments, a comprehensive understanding is obtained on the growth and structural properties of NGSs grown over a wide range of feedstock compositions.

cond-mat.mtrl-sci↗

arXiv2016

Polarized Raman and photoluminescence studies of a sub-micron sized hexagonal AlGaN crystallite for structural and optical properties

The polarized Raman spectroscopy is capable of giving confirmation regarding the crystalline phase as well as the crystallographic orientation of the sample. In this context, apart from crystallographic x-ray and electron diffraction tools, polarized Raman spectroscopy and corresponding spectral imaging can be a promising crystallographic tool for determining both crystalline phase and orientation. Sub-micron sized hexagonal AlGaN crystallites are grown by a simple atmospheric pressure chemical vapor deposition technique using the self catalytic vapor-solid process under N-rich condition. The crystallites are used for the polarized Raman spectra in different crystalline orientations along with spectral imaging studies. The results obtained from the polarized Raman spectral studies shows single crystalline nature of sub-micron sized hexagonal AlGaN crystallites. Optical properties of the crystallites for different crystalline orientations are also studied using polarized photoluminescence measurements. The influence of internal crystal field to the photoluminescence spectra is proposed to explain the distinctive observation of splitting of emission intensity reported, for the first time, in case of c-plane oriented single crystalline AlGaN crystallite as compared to that of m-plane oriented crystallite.

cond-mat.mtrl-sci↗

arXiv2016

Electrochemical supercapacitor performance of SnO2 quantum dots

Metal oxide nanostructures are widely used in energy applications like super capacitors and Li-on battery. Smaller size nanocrystals show better stability, low ion diffusion time, higher-ion flux and low pulverization than bigger size nanocrystals during electrochemical operation. Studying the distinct properties of smaller size nanocrystals such as quantum dots (QDs) can improve the understanding on reasons behind the better performance and it will also help in using QDs or smaller size nanoparticles (NPs) more efficiently in different applications. Aqua stable pure SnO2 QDs with compositional stability and high surface to volume ratio are studied as an electrochemical super capacitor material and compared with bigger size NPs of size 25 nm. Electron energy-loss spectroscopic study of the QDs revealed dominant role of surface over the bulk. Temperature dependent study of low frequency Raman mode and defect Raman mode of QDs indicated no apparent volume change in the SnO2 QDs within the temperature range of 80-300 K. The specific capacitance of these high surface area and stable SnO2 QDs has showed only 9% loss while increasing the scan rate from 20 mV/S to 500 mV/S. Capacitance loss for the QDs is less than 2% after 1000 cycles of charging discharging, whereas for the 25 nm SnO2 NPs, the capacitance loss is 8% after 1000 cycles. Availability of excess open volume in QDs leading to no change in volume during the electro-chemical operation and good aqua stability is attributed to the better performance of QDs over bigger sized NPs.

cond-mat.mtrl-sci↗

arXiv2016

Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(ON) and VGa-3ON defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied in situ scanning by Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the VGa-3ON defect complex on nanowire surface is attributed in controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires.

cond-mat.mtrl-sci↗

arXiv2016

Effect of Strain Relaxation and the Burstein-Moss Energy Shift on the Optical Properties of InN Films Grown in the Self-Seeded Catalytic Process

For the first time, high optical quality InN films were grown on sapphire substrate using atmospheric chemical vapour deposition technique in the temperature range of 560-650 oC. Self-catalytic approach was adopted to overcome the nucleation barrier for depositing InN films. In this process, seeding of the nucleation sites and subsequent growth was performed in the presence of reactive NH3. We investigated the simultaneous effect of strain and Burstein-Moss (BM) energy shift on optical properties of InN films using Raman and photoluminescence spectroscopy. Existence of compressive strain in all films is revealed by Raman spectroscopic analysis and is found to relax with increasing growth temperature. The asymmetric broadening of the A1(LO) phonon mode is observed with the onset of plasmon-phonon interaction for films grown at 620 oC. Large blue shift of the band gap of InN (1.2 eV) is observed as a collective result of compressive strain in films as well as BM shift. Carrier density is calculated using the BM shift in the photoluminescence spectra. Finally, blue shift in band edge emission is observed further because of the presence of compressive strain in the films along with the BM effect.

cond-mat.mtrl-sci↗

arXiv2016

Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A1 symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however is reported only in the O rich single nanowires with the asymmetric A1(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

cond-mat.mtrl-sci↗

arXiv2016

Piezoelectric Domains in the AlGaN Hexagonal Microrods: Effect of Crystal Orientations

Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence study reveal the formation of AlGaN microrods in the wurtzite phase and ensures the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

cond-mat.mtrl-sci↗

arXiv2016

Tuning of thermoelectric properties with changing Se content in Sb2Te3

Polycrystalline Sb 2 Te 3-x Se x (0.0 < x < 1.0) samples were synthesized by the solid state reaction method. The structural analysis showed that up to the maximal concentration of Se, the samples possess the Rhombohedral crystal symmetry (space group R 3 m ). Increase of Se content increases the resistivity of the samples. Variation of phonon frequencies, observed from Raman spectroscopic study, depict anomalous behaviour around x = 0.2. The sample Sb 2 Te 2.8 Se 0.2 also shows maximum Seebeck coefficient, carrier concentration and thermoelectric power factor. Nature of scattering mechanism controlling the thermopower data has been explored. The thermoelectric properties of the synthesized materials have been analyzed theoretically in the frame of Boltzmann equation approach.

cond-mat.mtrl-sci↗

arXiv2015

Selective observation of Goos-Hänchen and Imbert-Federov shifts in partial reflection via optimized weak measurements in linear and elliptical polarization basis

The spatial and the angular variants of the Goos-Hänchen (GH) and the Imbert-Federov (IF) beam shifts contribute in a complex interrelated way to the resultant beam shift in partial reflection at planar dielectric interfaces. Here, we show that the angular GH and the two variants of the IF effects can be decoupled, amplified and separately observed by weak value amplification and subsequent conversion of spatial$\leftrightarrow$angular nature of the beam shifts using appropriate pre and post selection of polarization states. We experimentally demonstrate such decoupling and illustrate various other intriguing manifestations of weak measurements by employing optimized pre and post selections (based on the eigen polarization states of the shifts) elliptical and / or linear polarization basis. The demonstrated ability to amplify, controllably decouple or combine the beam shifts via weak measurements may prove to be valuable for understanding the different physical contributions of the effects and for their applications in sensing and precision metrology

physics.optics↗

arXiv2015

Novel single phase vanadium dioxide nanostructured films for methane sensing near room temperature

Methane (CH_4) gas sensing properties of novel vanadium dioxide (VO_2) nanostructured films is reported for the first time. The single phase nanostructures are synthesized by pulsed dc-magnetron sputtering of V target followed by oxidation in O_2 atmosphere at 550 ^oC. The partial pressure of O_2 is controlled to obtain stoichiometric VO_2 with the samples showing rutile monoclinic crystalline symmetry and regions of rod shaped nano-architectures. These nanostructured films exhibit a reversible semiconductor to metal transition in the temperature range of 60-70 ^oC. Gas sensing experiments are carried out in the temperature span from 25 ^oC to 200 ^oC in presence of CH_4. These experiments reveal that the films respond very well at temperatures as low as 50 ^oC, in the semiconducting state.

cond-mat.mtrl-sci↗

arXiv2015

Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor

Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low vapor pressure of Ga below 900 ^oC. In the present study, we have grown the GaN nanowires at a temperature, as low as 700 ^oC. Role of indium in the reduction of growth temperature is discussed in the ambit of Raoult's law. Indium is used to increase the vapor pressure of the Ga sufficiently to evaporate even at low temperature initiating the growth of GaN nanowires. In addition to the studies related to structural and vibrational properties, optical properties of the grown nanowires are also reported for detailed structural analysis.

cond-mat.mtrl-sci↗

arXiv2015

Influence of oxygen in architecting large scale nonpolar GaN nanowires

Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of exceptionally high structural and optical quality nonpolar GaN nanowires with controlled and uniform surface morphology and size distribution, for large scale production. The role of O contamination (~1-10^5 ppm) in the surface architecture of these nanowires is investigated with the possible mechanism involved. Nonpolar GaN nanowires grown in O rich condition show the inhomogeneous surface morphologies and sizes (50 - 150 nm) while nanowires are having precise sizes of 40(5) nm and uniform surface morphology, for the samples grown in O reduced condition. Relative O contents are estimated using electron energy loss spectroscopy studies. Size-selective growth of uniform nanowires is also demonstrated, in the O reduced condition, using different catalyst sizes. Photoluminescence studies along with the observation of single-mode waveguide formation, as far field bright violet multiple emission spots, reveal the high optical quality of the nonpolar GaN nanowires grown in the O reduced condition.

physics.chem-ph↗

arXiv2015

Origin of Shifts in the Surface Plasmon Resonance Frequencies for Au and Ag Nanoparticles

Origin of shifts in the surface plasmon resonance (SPR) frequency for noble metal (Au, Ag) nanoclusters are discussed in this book chapter. Spill out of electron from the Fermi surface is considered as the origin of red shift. On the other hand, both screening of electrons of the noble metal in porous media and quantum effect of screen surface electron are considered for the observed blue shift in the SPR peak position.

cond-mat.mes-hall↗