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S. Dyer

Publications and source records attributed to S. Dyer.

5 recordsLinked to original sources

Longitudinal spin-relaxation optimization for miniaturized optically pumped magnetometers

The microfabrication of cesium vapor cells for optically pumped magnetometry relies on optimization of buffer gas pressure in order to maximize atomic coherence time and sensitivity to external magnetic signals. We demonstrate post-bond nitrogen buffer gas pressure tuning through localized heating of an integrated micro-pill dispenser. We characterize the variation in the intrinsic longitudinal relaxation rate, $\gamma_{10}$, and magnetic sensitivity, as a function of the resulting nitrogen buffer gas pressure. Measurements are conducted through employing an optically pumped magnetometer operating in a free-induction-decay configuration. $\gamma_{10}$ is extracted across a range of nitrogen pressures between $\sim$~60~-~700~Torr, measuring a minimum of 140~Hz at 115~Torr. Additionally, we achieve sensitivities as low as 130 ~fT/$\sqrt{\text{Hz}}$ at a bias field amplitude of $\sim 50~\mu$T. With the optimal nitrogen buffer gas pressure now quantified and achievable post-fabrication, these mass-producible cells can be tailored to suit a variety of sensing applications, ensuring peak magnetometer performance.

physics.atom-ph

Real-time buffer gas pressure tuning in a micro-machined vapor cell

We demonstrate a controllable depletion of the nitrogen buffer gas pressure in a micro-machined cesium (Cs) vapor cell from the dynamic heating of an alkali dispenser pill. When the alkali source is laser activated, the gettering compounds within the alkali pill dispenser reduce the nitrogen (N$_2$) content from the vapor for fine-tuning of the alkali to buffer gas pressure ratio. Additionally, we decrease the buffer gas pressure below 100$\,$mTorr to evaluate the presence of other potential broadening mechanisms. Real-time control of the gas pressure ratio in the vapor cell will have notable benefits for refining atomic sensor performance and provide a routine to achieve various target pressures across a wafer bonded with a uniform back-filled buffer gas pressure.

physics.atom-ph

A tuneable wavelength reference for chip-scale laser cooling

We demonstrate a tuneable, chip-scale wavelength reference to greatly reduce the complexity and volume of cold-atom sensors. A 1 mm optical path length micro-fabricated cell provides an atomic wavelength reference, with dynamic frequency control enabled by Zeeman shifting the atomic transition through the magnetic field generated by the printed circuit board (PCB) coils. The dynamic range of the laser frequency stabilization system is evaluated and used in conjunction with an improved generation of chip-scale cold atom platforms that traps 4 million 87Rb atoms. The scalability and component consolidation provide a key step forward in the miniaturization of cold atom sensors.

physics.atom-ph

Micro-machined deep silicon atomic vapor cells

Using a simple and cost-effective water jet process, silicon etch depth limitations are overcome to realize a $6\,$mm deep atomic vapor cell. While the minimum silicon feature size was limited to a $1.5\,$mm width in these first generation vapor cells, we successfully demonstrate a two-chamber geometry by including a $\sim$25~mm meandering channel between the alkali pill chamber and main interrogation chamber. We evaluate the impact of the channel conductance on the introduction of alkali vapor density during the pill activation process, and mitigate glass damage and pill contamination near the main chamber. Finally, we highlight the improved signal achievable in the $6\,$mm silicon cell compared to standard $2\,$mm path length silicon vapor cells.

physics.atom-ph

Hotspot Relaxation Dynamics in a Current Carrying Superconductor

We experimentally studied the dynamics of optically excited hotspots in current carrying WSi superconducting nanowires as a function of bias current, bath temperature and excitation wavelength. We discovered that: (1) the hotspot relaxation is a factor of ~ 4 slower in WSi than in NbN; (2) the hotspot relaxation time depends on bias current, and (3) the current dependence of the hotspot relaxation time changes with temperature and wavelength. We explained all of these effects with a model based on quasi particle recombination.

cond-mat.supr-con