arXiv subjects
Publications and source records attributed to S. E. Ulloa.
We make detailed analysis of each possible spin-orbit coupling of zincblende narrow-gap cylindrical quantum dots built in two-dimensional electron gas. These couplings are related to both bulk (Dresselhaus) and structure (Rashba) inversion asymmetries. We study the competition between electron-electron and spin-orbit interactions on electronic properties of 2-electron quantum dots.
We analyze the singlet-triplet splitting on a planar array of quantum dots coupled capacitively to a set of external voltage gates. The system is modelled using an extended Hubbard Hamiltonian keeping two excess electrons on the array. The voltage dependence of the low-energy singlet and triplet states is analyzed using the Feshbach formalism. The formation of a well decoupled two-level system in the ground state is shown to rely on the fact of having two particles in the system. Coherent operation of the array is studied with respect to single quantum bit operations. One quantum gate is implemented via voltage controls, while for the necessary second quantum gate, a uniform external magnetic field is introduced. The Aharonov-Bohm phases on the closed loop tunnel connections in the array are used to effectively suppress the tunneling, despite a constant tunneling amplitude in the structure. This allows one to completely stall the qubit in any arbitrary quantum superposition, providing full control of this interesting quantum system.
We investigate the characteristics of purely electrostatic interactions with external gates in constructing full single qubit manipulations. The quantum bit is naturally encoded in the spatial wave function of the electron system. Single-electron{transistor arrays based on quantum dots or insulating interfaces typically allow for electrostatic controls where the inter-island tunneling is considered constant, e.g. determined by the thickness of an insulating layer. A representative array of 3x3 quantum dots with two mobile electrons is analyzed using a Hubbard Hamiltonian and a capacitance matrix formalism. Our study shows that it is easy to realize the first quantum gate for single qubit operations, but that a second quantum gate only comes at the cost of compromising the low-energy two-level system needed to encode the qubit. We use perturbative arguments and the Feshbach formalism to show that the compromising of the two-level system is a rather general feature for electrostatically interacting qubits and is not just related to the specific details of the system chosen. We show further that full implementation requires tunable tunneling or external magnetic fields.
We investigate theoretically the linear conductance of a two-level quantum dot as a function of the gate voltage and different strength of coupling to the external electronic system (the reservoir). Apart from the weak coupling regime, characterized by the Kondo-enhancement of the conductance in the spinful ground state, a strong coupling regime, which can be called mixed-valence (MV), is found. This regime is characterized by a qualitative change of the energy level structure in the dot, resulting in sub- and super-tunneling coupling of the levels, which in turn yield a novel temperature dependence of the Kondo effect in the quantum dot.
The Aharonov-Bohm effect is measured in a four-terminal open ring geometry based on a Ga[Al]As heterostructure. Two quantum dots are embedded in the structure, one in each of the two interfering paths. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots. Although the measured phase shifts are in qualitative agreement with theoretical predictions, the phase evolution exhibits unexpected dependence on the magnetic field. For example, phase lapses are found only in certain ranges of magnetic field.
Spin-orbit coupling effects are studied in quantum dots in InSb, a narrow-gap material. Competition between different Rashba and Dresselhaus terms is shown to produce wholesale changes in the spectrum. The large (and negative) $g$-factor and the Rashba field produce states where spin is no longer a good quantum number and intrinsic flips occur at moderate magnetic fields. For dots with two electrons, a singlet-triplet mixing occurs in the ground state, with observable signatures in intraband FIR absorption, and possible importance in quantum computation.
We calculate electrostatic potential landscapes for an external probe charge in the presence of a set of metallic islands. Our numerical calculation in three dimensions (3D)uses an efficient grid relaxation technique. The well-known relaxation algorithm for solving the Poisson equation in two dimensions is generalized to 3D. In addition,all charges on the system, free as well as induced charges,are determined accurately and self-consistently to satisfy the desired boundary conditions. This allows the straightforward calculation of the potential on the outer boundary using the free space electrostatic Green's function,as well as the calculation of the entire capacitance matrix of the system. Physically interesting examples of nanoscale systems are presented and analyzed.
The quantum nature of matter lies in the wave function phases that accumulate while particles move along their trajectories. A prominent example is the Aharonov-Bohm phase, which has been studied in connection with the conductance of nanostructures. However, optical response in solids is determined by neutral excitations, for which no sensitivity to magnetic flux would be expected. We propose a new mechanism for the topological phase of a neutral particle, a polarized exciton confined to a semiconductor quantum ring. We predict that this magnetic-field induced phase may strongly affect excitons in a system with cylindrical symmetry, resulting in switching between `bright' exciton ground states and novel `dark' states with nearly infinite lifetimes. Since excitons determine the optical response of semiconductors, the predicted phase can be used to tailor photon emission from quantum nanostructures.
We study the role of dissipation and structural defects on the time evolution of quantum dot arrays with mobile charges under external driving fields. These structures, proposed as quantum dot cellular automata, exhibit interesting quantum dynamics which we describe in terms of equations of motion for the density matrix. Using an open system approach, we study the role of asymmetries and the microscopic electron-phonon interaction on the general dynamical behavior of the charge distribution (polarization) of such systems. We find that the system response to the driving field is improved at low temperatures (and/or weak phonon coupling), before deteriorating as temperature and asymmetry increase. In addition to the study of the time evolution of polarization, we explore the linear entropy of the system in order to gain further insights into the competition between coherent evolution and dissipative processes.
A novel magnetic interference effect is proposed for a neutral, but polarizable exciton in a quantum ring with a finite width. The magnetic interference effect originates from the nonzero dipole moment in the exciton. The ground state of exciton acquires a nonzero angular momentum with increasing normal magnetic field. This leads to the suppression of the photoluminescence in defined windows of the magnetic field.
We study theoretically the magnetic field effect on a neutral, but polarizable exciton confined in quantum-ring structures. For excitons with a nonzero dipole moment, a novel magnetic interference effect occurs: The ground state of an exciton confined in a finite-width quantum ring possesses a nonzero angular momentum with increasing normal magnetic field. This effect is accompanied by a suppression of the photoluminescence in well-defined magnetic-field intervals. The magnetic interference effect is calculated for type-II quantum dots and quantum rings.
We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The presence of these oscillations coincides with the observation of a metal-insulator transition, and a maximum in the electron mobility as a function of the electron density. Within a model based on correlated disorder, we establish a relation between these effects.
The interaction potential of a two-dimensional system of excitons with spatially separated electron-hole layers is considered in the strong magnetic field limit. The excitons are assumed to have free dynamics in the $x$-$y$ plane, while being constrained or `polarized' in the $z$ direction. The model simulates semiconductor double layer systems under strong magnetic field normal to the layers. The {\em residual} interaction between excitons exhibits interesting features, arising from the coupling of the center-of-mass and internal degrees of freedom of the exciton in the magnetic field. This coupling induces a dynamical dipole moment proportional to the center-of-mass magnetic moment of the exciton. We show the explicit dependence of the inter-exciton potential matrix elements, and discuss the underlying physics. The unusual features of the interaction potential would be reflected in the collective response and non-equilibrium properties of such system.
We investigate the dependence of the ground state of a multi-level quantum dot on the coupling to an external fermionic system and on the interactions in the dot. As the coupling to the external system increases, the rearrangement of the effective energy levels in the dot signals the transition from the Kondo regime to a mixed valence (MV) regime. The MV regime in a two level dot is characterized by an intrinsic mixing of the levels in the dot, resulting in non-perturbative sub- and super-tunneling phenomena that strongly influence the Kondo effect.
We present a model to find analytically the electronic states in self-assembled quantum dots with a truncated spherical cap (`lens') geometry. A conformal analytical image is designed to map the quantum dot boundary into a dot with semi-spherical shape. The Hamiltonian for a carrier confined in the quantum lens is correspondingly mapped into an equivalent operator and its eigenvalues and eigenfunctions for the corresponding Dirichlet problem are analyzed. A modified Rayleigh-Schrödinger perturbation theory is presented to obtain analytical expressions for the energy levels and wavefunctions as a function of the spherical cap height $b$ and radius $a$ of the circular cross section. Calculations for a hard wall confinement potential are presented, and the effect of decreasing symmetry on the energy values and eigenfunctions of the lens-shape quantum dot is studied. As the degeneracies of a semi-circular geometry are broken for $b\neq a$, our perturbation approach allows tracking of the split states. Energy states and electronic wavefunctions with $m=0$ present the most pronounced influence on the reduction of the lens height. The analytical expressions presented here can be used to better parameterize the states in realistic self-assembled quantum dots.
It is shown that a non-periodic Kronig-Penney model exhibits mobility edges if the positions of the scatterers are correlated at long distances. An analytical expression for the energy-dependent localization length is derived for weak disorder in terms of the real-space correlators defining the structural disorder in these systems. We also present an algorithm to construct a non-periodic but correlated sequence exhibiting desired mobility edges. This result could be used to construct window filters in electronic, acoustic, or photonic non-periodic structures.
A two-layer system coupled via tunneling and with different carrier masses in each layer is investigated in the integer quantum Hall regime. Striking deviations of the one-layer Hall conductivity from the usual quantization are found, if resonance between Landau levels of different layers is achieved. The appearance of negative jumps in the Hall conductivity is also predicted under suitable conditions. The results obtained are robust against disorder in the system.
Spectral weights and current-voltage characteristics of an artificial diatomic molecule are calculated, considering cases where the dots connected in series are in general different. The spectral weights allow us to understand the effects of correlations, their connection with selection rules for transport, and the role of excited states in the experimental conductance spectra of these coupled double dot systems (DDS). An extended Hubbard Hamiltonian with varying interdot tunneling strength is used as a model, incorporating quantum confinement in the DDS, interdot tunneling as well as intra- and interdot Coulomb interactions. We find that interdot tunneling values determine to a great extent the resulting eigenstates and corresponding spectral weights. Details of the state correlations strongly suppress most of the possible conduction channels, giving rise to effective selection rules for conductance through the molecule. Most states are found to make insignificant contributions to the total current for finite biases. We find also that the symmetry of the structure is reflected in the I-V characteristics, and is in qualitative agreement with experiment.