arXiv subjects

S. F. Li

Publications and source records attributed to S. F. Li.

3 recordsLinked to original sources

arXiv2013

Assembly and Installation of the Daya Bay Antineutrino Detectors

The Daya Bay reactor antineutrino experiment is designed to make a precision measurement of the neutrino mixing angle theta13, and recently made the definitive discovery of its nonzero value. It utilizes a set of eight, functionally identical antineutrino detectors to measure the reactor flux and spectrum at baselines of 300 - 2000m from the Daya Bay and Ling Ao Nuclear Power Plants. The Daya Bay antineutrino detectors were built in an above-ground facility and deployed side-by-side at three underground experimental sites near and far from the nuclear reactors. This configuration allows the experiment to make a precision measurement of reactor antineutrino disappearance over km-long baselines and reduces relative systematic uncertainties between detectors and nuclear reactors. This paper describes the assembly and installation of the Daya Bay antineutrino detectors.

physics.ins-det↗

arXiv2012

A side-by-side comparison of Daya Bay antineutrino detectors

The Daya Bay Reactor Neutrino Experiment is designed to determine precisely the neutrino mixing angle $θ_{13}$ with a sensitivity better than 0.01 in the parameter sin$^22θ_{13}$ at the 90% confidence level. To achieve this goal, the collaboration will build eight functionally identical antineutrino detectors. The first two detectors have been constructed, installed and commissioned in Experimental Hall 1, with steady data-taking beginning September 23, 2011. A comparison of the data collected over the subsequent three months indicates that the detectors are functionally identical, and that detector-related systematic uncertainties exceed requirements.

physics.ins-det↗

arXiv2007

Room temperature green light emissions from nonpolar cubic InGaN/GaN multi quantum wells

Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to 5th order are clearly resolved in X-ray diffraction. We observe bright green room temperature photoluminescence (PL) from c-InxGa1-xN/GaN MQWs (x=0.16). The full-width at half maximum of the PL emission is about 240 meV at 300 K. The PL intensity increases with well thickness, giving proof that polarization fields which can limit the performance of the wurtzite III-nitride based devices are absent. The diffusion length of excess carriers is about 17 nm.

cond-mat.mtrl-sci↗