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S. G. Sharapov

Publications and source records attributed to S. G. Sharapov.

At least 19 recordsLinked to original sources

Sagnac and Mashhoon effects in graphene

We investigate the Sagnac and Mashhoon effects in graphene, taking into account both the pseudospin and intrinsic spin of electrons, within a simplified model of a rotating nanotube or infinitesimally narrow ring. Based on considerations of the relativistic phase of the wave function and employing the effective Larmor theorem, we demonstrate that the Sagnac fringe shift retains a form analogous to that for free electrons, governed by the electron's vacuum mass. In the case of a narrow ring, an additional $π$-phase shift arises due to the Berry phase associated with the honeycomb graphene lattice. The Mashhoon fringe shift retains its conventional form, with its dependence on the Fermi velocity.

cond-mat.mes-hall↗

WKB energy levels in gapped graphene under crossed electromagnetic fields

We consider a single layer of graphene subjected to a magnetic field $H$ applied perpendicular to the layer and an in-plane constant radial electric field $E$. The Dirac equation for this configuration does not admit analytical solutions in terms of known special functions. Using the WKB approximation, we demonstrate that for gapped graphene the Bohr-Sommerfeld quantization condition for eigenenergies includes an additional valley-dependent geometrical phase. When this term is accounted for, the WKB approximation exhibits good agreement with results from the exact diagonalization method except to the lowest Landau level.

cond-mat.mes-hall↗

Sagnac effect in a rotating ring with Dirac fermions

The observation of the Sagnac effect for massive material particles offers a significant enhancement in sensitivity when compared to optical interferometers with equal area and angular rotation velocity. For this reason, there have been suggestions to employ solid-state interferometers that rely on semiconductors and graphene. We investigate the Sagnac effect in Dirac materials governed by the relativisticlike quasiparticle dispersion law and show that the fringe shift is still determined by the mass of a free electron. This confirms that graphene is indeed a promising material for creating solid-state Sagnac interferometers. Considering monolayer graphene with its linear dispersion law and comparing it with light provides a deeper understanding of the Sagnac effect.

cond-mat.mes-hall↗

Peculiarities of the Landau level collapse in graphene ribbons in crossed magnetic and in-plane electric fields

Employing the low-energy effective theory alongside a combination of analytical and numerical techniques, we explore the Landau level collapse phenomenon, uncovering previously undisclosed features. We consider both finite-width graphene ribbons and semi-infinite geometries subjected to a perpendicular magnetic field and an in-plane electric field, applied perpendicular to both zigzag and armchair edges. In the semi-infinite geometry the hole (electron)-like Landau levels collapse as the ratio of electric and magnetic fields reaches the critical value $ +(-) 1$. On the other hand, the energies of the electron (hole)-like levels remain distinct near the edge and deeply within the bulk approaching each other asymptotically for the same critical value. In the finite geometry, we show that the electron (hole)-like levels become denser and merge, forming a band.

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Zigzag edge states in graphene in the presence of in-plane electric field

The present study explores the edge states in a finite-width graphene ribbon and a semi-infinite geometry subject to a perpendicular magnetic field and an in-plane electric field, applied perpendicular to a zigzag edge. To accomplish this, a combination of analytic and numerical methods within the framework of low-energy effective theory is employed. Both the gapless and gapped Dirac fermions in graphene are considered. It is found that a surface mode localized at the zigzag edge remains dispersionless even in the presence of electric field. This is shown analytically by employing Darwin's expansion of the parabolic cylinder functions of large order and argument.

cond-mat.mes-hall↗

Landau level collapse in graphene in the presence of in-plane radial electric and perpendicular magnetic fields

It is known that in two-dimensional relativistic Dirac systems placed in orthogonal uniform magnetic and electric fields, the Landau levels collapse as the applied in-plane electric field reaches a critical value $\pm E_c$. We study this phenomenon for a distinct field configuration with in-plane constant radial electric field. The Dirac equation for this configuration does not allow analytical solutions in terms of known special functions. The results are obtained by using both the WKB approximation and the exact diagonalization and shooting methods. It is shown that the collapse occurs for positive values of the total angular momentum quantum number, the hole (electron)-like Landau levels collapse as the electric field reaches the value $ +(-) E_c/2$. The investigation of the Landau level collapse in the case of gapped graphene shows a number of distinctive features in comparison with the gapless case.

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Genesis and fading away of persistent currents in a Corbino disk geometry

The detailed analytical and numerical analysis of the electron spectrum, persistent currents, and their densities for an annulus placed in a constant magnetic field (Corbino disk geometry) is presented. We calculate the current density profiles and study their dependence on the inner and outer radii of the annular. We study evolution of the persistent currents and track their emergence and decay for different limiting cases of such a geometry, starting from a nanodot and ending by a macroscopic circle. Our analytical results for the currents are confirmed by the agreement between the integration of the corresponding current densities and the application of the Byers-Yang formula, when it is applicable. Among other results we find the general expression for the persistent current in a narrow annulus, which in the one channel approximation reproduces the well-known result for quasi-one dimensional mesoscopic metallic ring. Moreover it allows to analyze the multi-channel case of a relatively wide annulus. Our study can be used for more accurate treatment and interpretation of the experimental data with measurements of the persistent currents in different doubly-connected systems.

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Concise guide for electronic topological transitions

In this short review we pass through the milestones in the studies of the electronic topological transitions (ETT) and focus on some recent applications of the ideas worked out in their classical theory. These are: two-dimensional electron systems, de Haas-van Alphen effect, classification of ETT in multidimensional systems, superconductivity in systems close to ETT, thermoelectricity in heavy-fermion systems, where the cascades of topological changes of Fermi surface (FS) are generated by magnetic field. The history of studies of ETT is inextricably linked with Kharkov school of condensed matter physics, with such names as I.M. Lifshitz, V.G.Bar'yakhtar and many other. Among them is Moisey Isaakovich Kaganov, who contributed much in studies of the role of geometry and topology of FS in physical properties of the metals. Two of the authors (A.V. and Y.G.) had a honor and pleasure to work with "Musik", as all friends called Kaganov; all of us have been learning the niceties of science from his books. "The Fermi surface is the stage on which the drama of the life of the electron is played out" wrote Kaganov and Lifshitz. We devote this work to their memory.

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Nernst and Ettingshausen effects in the Laughlin geometry

The ideal reversible thermodynamic cycle visualization of the Nernst effect in Laughlin geometry, excluding the kinetic contribution is proposed. The Ettingshausen effect is also treated in the fashion using the reverse cycle. The corresponding values of the off-diagonal thermoelectric coefficients are expressed through the ratio of the entropy budget per magnetic flux. Our approach enlightens the profound thermodynamic origin of the relation between the Nernst effect and magnetization currents.

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Work function, deformation potential, and collapse of Landau levels in strained graphene and silicene

We perform a systematic {\it ab initio} study of the work function and its uniform strain dependence for graphene and silicene for both tensile and compressive strains. The Poisson ratios associated with armchair and zigzag strains are also computed. Based on these results, we obtain the deformation potential, crucial for straintronics, as a function of the applied strain. Further, we propose a particular experimental setup with a special strain configuration that generates only the electric field, while the pseudomagnetic field is absent. Then, applying a real magnetic field, one should be able to realize experimentally the spectacular phenomenon of the collapse of Landau levels in graphene or related two-dimensional materials.

cond-mat.str-el↗

The Nernst effect in Corbino geometry

We study the manifestation of the Nernst effect in the Corbino disk subjected to the normal external magnetic field and to the radial temperature gradient. The Corbino geometry offers a precious opportunity for the direct measurement of the magnetization currents that are masked by kinetic contributions to the Nernst current in the conventional geometry. The magnetization currents, also referred to as the edge currents, are independent on the conductivity of the sample which is why they can be conveniently described within the thermodynamic approach. They can be related to the Landau thermodynamic potential for an infinite system. We demonstrate that the observable manifestation of this, purely thermodynamic, Nernst effect consists in the strong oscillations of the magnetic field measured in the center of the disk as a function of the external field. The oscillations depend on the temperature difference at the edges of the disk. Dirac fermions and 2D electrons with a parabolic spectrum are characterized by oscillations of different phase and frequency. We predict qualitatively different power dependencies of the magnitude of the Nernst signal on the chemical potential for normal and Dirac carriers.

cond-mat.mes-hall↗

Effect of resonant impurity scattering of carriers on Drude peak broadening in uniaxially strained graphene

An explanation is proposed for the recently observed in optical spectra of monolayer graphene giant increase in the Drude peak width under applied uniaxial strain. We argue that the underlying mechanism of this increase can be based on resonant scattering of carriers from inevitably present impurities such as adsorbed atoms that can be described by the Fano-Anderson model. We demonstrate that the often neglected scalar deformation potential plays the essential role in this process. The conditions necessary for the maximum effect of the giant Drude peak broadening are determined. It is stressed that the effect is strongly enhanced when the Fermi level gets closer to the Dirac point. Our theoretical analysis provides guidelines for functionalizing graphene samples in a way that would allow to modulate efficiently the Drude peak width by the applied strain.

cond-mat.dis-nn↗

Impurity induced broadening of Drude peak in strained graphene

The recent experimental study of the far-infrared transmission spectroscopy of monolayer graphene has shown that the Drude peak width increases by more than $10\%$ per $1\%$ of applied mechanical strain, while the Drude weight remains unchanged. We study the influence of the strain on the resonant impurity scattering. We propose a mechanism of augmentation of the scattering rate due to the shift in the position of resonance. Using the Lifshitz model of substitutional impurities, we investigate changes in the Drude peak weight and width as functions of the Fermi energy, impurity concentration and magnitude of the impurity potential.

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Entropy Signatures of Topological Phase Transitions

We review the behavior of the entropy per particle in various two-dimensional electronic systems. The entropy per particle is an important characteristic of any many body system that tells how the entropy of the ensemble of electrons changes if one adds one more electron. Recently, it has been demonstrated how the entropy per particle of a two-dimensional electron gas can be extracted from the recharging current dynamics in a planar capacitor geometry. These experiments pave the way to the systematic studies of entropy in various crystal systems including novel two-dimensional crystals such as gapped graphene, germanene and silicene. Theoretically, the entropy per particle is linked to the temperature derivative of the chemical potential of the electron gas by the Maxwell relation. Using this relation, we calculate the entropy per particle in the vicinity of topological transitions in various two-dimensional electronic systems. We show that the entropy experiences quantized steps at the points of Lifshitz transitions in a two-dimensional electronic gas with a parabolic energy spectrum. In contrast, in doubled-gapped Dirac materials, the entropy per particles demonstrates characteristic spikes once the chemical potential passes through the band edges. The transition from a topological to trivial insulator phase in germanene is manifested by the disappearance of a strong zero-energy resonance in the entropy per particle dependence on the chemical potential. We conclude that studies of the entropy per particle shed light on multiple otherwise hidden peculiarities of the electronic band structure of novel two-dimensional crystals.

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Detection of topological phase transitions through entropy measurements: the case of germanene

We propose a characterization tool for studies of the band structure of new materials promising for the observation of topological phase transitions. We show that a specific resonant feature in the entropy per electron dependence on the chemical potential may be considered as a fingerprint of the transition between topological and trivial insulator phases. The entropy per electron in a honeycomb two-dimensional crystal of germanene subjected to the external electric field is obtained from the first principle calculation of the density of electronic states and the Maxwell relation. We demonstrate that, in agreement to the recent prediction of the analytical model, strong spikes in the entropy per particle dependence on the chemical potential appear at low temperatures. They are observed at the values of the applied bias both below and above the critical value that corresponds to the transition between the topological insulator and trivial insulator phases, while the giant resonant feature in the vicinity of zero chemical potential is strongly suppressed at the topological transition point, in the low temperature limit. In a wide energy range, the van Hove singularities in the electronic density of states manifest themselves as zeros in the entropy per particle dependence on the chemical potential.

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Entropy per particle spikes in the transition metal dichalcogenides

We derive a general expression for the entropy per particle as a function of chemical potential, temperature and gap magnitude for the single layer transition metal dichalcogenides. The electronic excitations in these materials can be approximately regarded as two species of the massive or gapped Dirac fermions. Inside the smaller gap there is a region with zero density of states where the dependence of the entropy per particle on the chemical potential exhibits a huge dip-and-peak structure. The edge of the larger gap is accompanied by the discontinuity of the density of states that results in the peak in the dependence of the entropy per particle on the chemical potential. The specificity of the transition metal dichalcogenides makes possible the observation of these features at rather high temperatures order of 100 K. The influence of the uniaxial strain on the entropy per particle is discussed.

cond-mat.mes-hall↗

Density of states of Dirac-Landau levels in a gapped graphene monolayer under strain gradient

We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.

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Entropy spikes as a signature of Lifshitz transitions in the Dirac materials

We demonstrate theoretically that the characteristic feature of a 2D system undergoing $N$ consequent Lifshitz topological transitions is the occurrence of spikes of entropy per particle $s$ of a magnitude $\pm \ln 2/(J-1/2)$ with $2 \leq J \leq N$ at low temperatures. We derive a general expression for $s$ as a function of chemical potential, temperature and gap magnitude for the gapped Dirac materials. Inside the smallest gap, the dependence of $s$ on the chemical potential exhibits a dip-and-peak structure in the temperature vicinity of the Dirac point. The spikes of the entropy per particles can be considered as a signature of the Dirac materials. These distinctive characteristics of gapped Dirac materials can be detected in transport experiments where the temperature is modulated in gated structures.

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