arXiv subjects

S. Gaucher

Publications and source records attributed to S. Gaucher.

4 recordsLinked to original sources

arXiv2026

Geometry of Relaxed Fair Regression: A Unified Framework for Aware and Unaware Settings

Fairness-accuracy trade-offs are a central concern in the deployment of fairness-aware machine learning methods. When sensitive attributes are unavailable at inference time-the so called unawareness setting, principled methods for obtaining accurate predictions under relaxed fairness constraints are largely missing. In this work, we address this gap by formulating regression under a demographic parity penalty as an optimal transport problem. Our framework unifies both the \emph{aware} and \emph{unaware} settings and characterizes optimal prediction functions via optimal transport maps, under both squared Wasserstein-2 and Total Variation penalties. These results reveal that the choice of penalty reflects fundamentally different fairness philosophies: the Wasserstein penalty induces a smooth, population-wide compromise, while Total Variation enforces exact parity for a subset of individuals. Building on these theoretical characterizations, we propose an algorithm that is simple to implement, computationally efficient, and consistently matches or outperforms state-of-the-art baselines on real-world benchmarks.

stat.ML↗

arXiv2026

Counterfactually Fair Regression via Optimal Transport

We consider the problem of learning a counterfactually fair regressor. We adopt a causal uncertainty view in which counterfactual fairness is defined with resampled noise. We focus on obtaining theoretical fairness guarantees for a new post-processing estimator. We begin by showing that counterfactual fairness is equivalent to satisfying demographic parity conditional on the latent variable. This allows us to provide a closed-form expression of the optimal fair regressor via a barycentric quantile map. In order to handle continuous latent variables, we propose a discretized post-processing method. Then, under mild regularity assumptions, we prove high-probability finite-sample fairness guarantees for our estimator, providing an unfairness decay at rate $\tilde O(n^{-1/3})$, and establishing a matching risk bound of order $\tilde O(n^{-1/3})$. We provide a matching lower bound on the excess risk of almost fair predictions. Finally, we extend our results to the setting of relaxed counterfactual fairness. We validate our approach on real-world and synthetic data.

stat.ML↗

arXiv2017

Specific heat and entropy of fractional quantum Hall states in the second Landau level

Specific heat has had an important role in the study of superfluidity and superconductivity, and could provide important information about the fractional quantum Hall effect as well. However, traditional measurements of the specific heat of a two-dimensional electron gas are difficult due to the large background contribution of the phonon bath, even at very low temperatures. Here, we report measurements of the specific heat per electron in the second Landau level by measuring the thermalization time between the electrons and phonons. We observe activated behaviour of the specific heat of the 5/2 and 7/3 fractional quantum Hall states, and extract the entropy by integrating over temperature. Our results are in excellent agreement with previous measurements of the entropy via longitudinal thermopower. Extending the technique to lower temperatures could lead to detection of the non-Abelian entropy predicted for bulk quasiparticles at 5/2 filling

cond-mat.mes-hall↗

arXiv2015

Mechanical Flip-Chip for Ultra-High Electron Mobility Devices

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

cond-mat.mes-hall↗