arXiv subjects

S. Goswami

Publications and source records attributed to S. Goswami.

23 records · Page 2Linked to original sources

arXiv2014

Ballistic transport in graphene grown by chemical vapor deposition

In this letter we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ~μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

cond-mat.mes-hall↗

arXiv2013

Black Holes In Young Stellar Clusters

We present theoretical models for stellar black hole (BH) properties in young, massive star clusters. Using a Monte Carlo code for stellar dynamics, we model realistic star clusters with $N\simeq 5\times10^5$ stars and significant binary fractions (up to 50%) with self-consistent treatments of stellar dynamics and stellar evolution. We compute the formation rates and characteristic properties of single and binary BHs for various representative ages, cluster parameters, and metallicities. Because of dynamical interactions and supernova (SN) kicks, more single BHs end up retained in clusters compared to BHs in binaries. We also find that the ejection of BHs from a cluster is a strong function of initial density. In low-density clusters (where dynamical effects are negligible), it is mainly SN kicks that eject BHs from the cluster, whereas in high-density clusters (initial central density $ρ_c(0) \sim 10^5 \, M_\odot\, {\rm pc}^{-3} $ in our models) the BH ejection rate is enhanced significantly by dynamics. Dynamical interactions of binary systems in dense clusters also modify the orbital period and eccentricity distributions while also increasing the probability of a BH having a more massive companion.

astro-ph.GA↗

arXiv2011

Interim Design Report

The International Design Study for the Neutrino Factory (the IDS-NF) was established by the community at the ninth "International Workshop on Neutrino Factories, super-beams, and beta- beams" which was held in Okayama in August 2007. The IDS-NF mandate is to deliver the Reference Design Report (RDR) for the facility on the timescale of 2012/13. In addition, the mandate for the study [3] requires an Interim Design Report to be delivered midway through the project as a step on the way to the RDR. This document, the IDR, has two functions: it marks the point in the IDS-NF at which the emphasis turns to the engineering studies required to deliver the RDR and it documents baseline concepts for the accelerator complex, the neutrino detectors, and the instrumentation systems. The IDS-NF is, in essence, a site-independent study. Example sites, CERN, FNAL, and RAL, have been identified to allow site-specific issues to be addressed in the cost analysis that will be presented in the RDR. The choice of example sites should not be interpreted as implying a preferred choice of site for the facility.

hep-ex↗

arXiv2011

Multiferroic coupling in nanoscale BiFeO3

Using the results of x-ray and neutron diffraction experiments, we show that the ferroelectric polarization, in ~22 nm particles of BiFeO3, exhibits a jump by ~30% around the magnetic transition point T_N (~635 K) and a suppression by ~7% under 5T magnetic field at room temperature (<<T_N). These results confirm presence of strong multiferroic coupling even in nanoscale BiFeO3 and thus could prove to be quite useful for applications based on nanosized devices of BiFeO3.

cond-mat.mtrl-sci↗

arXiv2004

Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.

cond-mat.mtrl-sci↗