arXiv subjects

S. Haas

Publications and source records attributed to S. Haas.

31 records · Page 2Linked to original sources

arXiv2005

Scaling Relations in the Triplet Superconductor PrOs4Sb12

Scaling relations are one of the hallmarks of nodal superconductivity since they contain information characteristic for gapless order parameters. In this paper we derive the scaling relations for the thermodynamics and the thermal conductivity in the vortex state of the A and B phases of the skutterudite PrOs4Sb12. Experimental confirmation of these scaling relations can provide further support for anisotropic gap functions which were previously considered for this material.

cond-mat.supr-con↗

arXiv2005

BCS theory of nodal superconductors

This course has a dual purpose. First we review the successes of the weak-coupling BCS theory in describing new classes of superconductors discovered since 1979. They include the heavy-fermion superconductors, high-Tc cuprate superconductors, organic superconductors, Sr2RuO4, etc. Second, we present the quasiclassical approximation introduced by Volovik, which we extend to describe the thermodynamics and the thermal conductivity of the vortex state in nodal superconductors. This approach provides the most powerful tool to identify the symmetry of the energy gap function Delta(k) in these new superconductors.

cond-mat.supr-con↗

arXiv2004

Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator

We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4*10^12/cm^2. In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold region is broadened, indicating that the SAM creates additional trap states, whose density is estimated to be of order 1*10^12/cm^2.

cond-mat.mtrl-sci↗

arXiv2004

Panorama of Nodal Superconductors

Since 1979, many new classes of superconductors have been discovered, including heavy-fermion compounds, organic conductors, high-Tc cuprates, and Sr2RuO4. Most of these superconductors are unconventional and/or nodal. Therefore it is of central importance to determine the symmetry of the order parameter in each of these superconductors. In particular, the angular-controlled thermal conductivity in the vortex state provides a unique means of investigating the nodal structure of the superconducting energy gap when high-quality single crystals in the extremely clean limit are available. Using this method, Izawa et al have recently succeeded in identifying the energy gap symmetry of superconductivity in Sr2RuO4, CeCoIn5, kappa-(ET)2Cu(NCS)2, YNi2B2C, and PrOs4Sb12.

cond-mat.supr-con↗

arXiv2004

Hole mobility in organic single crystals measured by a "flip-crystal" field-effect technique

We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the FET electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purification of the starting materials, hole mobilities of 10.7, 1.3, and 1.4 cm^2/Vs have been measured on rubrene, tetracene, and pentacene single crystals, respectively. Four-terminal measurements allow for the extraction of the "intrinsic" transistor channel resistance and the parasitic series contact resistances. The technique employed in this study shows potential as a general method for studying charge transport in field-accumulated carrier channels near the surface of organic single crystals.

cond-mat.other↗

arXiv2003

Field-induced charge transport at the surface of pentacene single crystals: a method to study charge dynamics of 2D electron systems in organic crystals

A method has been developed to inject mobile charges at the surface of organic molecular crystals, and the DC transport of field-induced holes has been measured at the surface of pentacene single crystals. To minimize damage to the soft and fragile surface, the crystals are attached to a pre-fabricated substrate which incorporates a gate dielectric (SiO_2) and four probe pads. The surface mobility of the pentacene crystals ranges from 0.1 to 0.5 cm^2/Vs and is nearly temperature-independent above ~150 K, while it becomes thermally activated at lower temperatures when the induced charges become localized. Ruling out the influence of electric contacts and crystal grain boundaries, the results contribute to the microscopic understanding of trapping and detrapping mechanisms in organic molecular crystals.

cond-mat↗

arXiv2000

Order by disorder from non-magnetic impurities in a two-dimensional quantum spin liquid

We consider doping of non-magnetic impurities in the spin-1/2, 1/5-depleted square lattice. This structure, whose undoped phase diagram offers both magnetically ordered and spin-liquid ground states, is realized physically in CaV_4O_9. Doping into the ordered phase results in a progressive loss of order, which becomes complete at the percolation threshold. By contrast, non-magnetic impurities introduced in the spin liquids create a phase of weak but long-ranged antiferromagnetic order coexisting with the gapped state. The latter may be viewed as a true order-by-disorder phenomenon. We study the phase diagram of the doped system by computing the static susceptibility and staggered magnetization using a stochastic series-expansion quantum Monte Carlo technique.

cond-mat.str-el↗

arXiv1997

Dynamical properties of the spin-Peierls compound α'--NaV2O5

Dynamical properties of the novel inorganic spin-Peierls compound α'--NaV2O5 are investigated using a one-dimensional dimerized Heisenberg model. By exact diagonalizations of chains with up to 28 sites, supplemented by a finite-size scaling analysis, the dimerization parameter δis determined by requiring that the model reproduces the experimentally observed spin gap Δ. The dynamical and static spin structure factors are calculated. As for CuGeO3, the existence of a low energy magnon branch separated from the continuum is predicted. The present calculations also suggest that a large magnetic Raman scattering intensity should appear above an energy threshold of 1.9 Δ. The predicted photoemission spectrum is qualitatively similar to results for an undimerized chain due to the presence of sizable short-range antiferromagnetic correlations.

cond-mat.str-el↗

arXiv1996

Atomic Carbon in M82: Physical conditions derived from simultaneous observations of the [CI] fine structure submillimeter wave transitions

We report the first extragalactic detection of the neutral carbon [CI] 3P2-3P1 fine structure line at 809 GHz. The line was observed towards M82 simultaneously with the 3P1-3P0 line at 492 GHz, providing a precise measurement of the J=2-1/J=1-0 integrated line ratio of 0.96 (on a [K km s^-1] -scale). This ratio constrains the [CI] emitting gas to have a temperature of at least 50 K and a density of at least 10^4 cm^-3. Already at this minimum temperature and density, the beam averaged CI-column density is large, 2.1 10^18 cm^-2, confirming the high CI/CO abundance ratio of approximately 0.5 estimated earlier from the 492 GHz line alone. We argue that the [CI] emission from M82 most likely arises in clouds of linear size around a few pc with a density of about 10^4 cm^-3 or slightly higher and temperatures of 50 K up to about 100 K.

astro-ph↗

arXiv1995

Superconductivity in the Cuprates as a Consequence of Antiferromagnetism and a Large Hole Density of States

We briefly review a theory for the cuprates that has been recently proposed based on the movement and interaction of holes in antiferromagnetic (AF) backgrounds. A robust peak in the hole density of states (DOS) is crucial to produce a large critical temperature once a source of hole attraction is identified. The predictions of this scenario are compared with experiments. The stability of the calculations after modifying some of the original assumptions is addressed. We find that if the dispersion is changed from an antiferromagnetic band at half-filling to a tight binding $cosk_x + cosk_y$ narrow band at $ =0.87$, the main conclusions of the approach remain basically the same i.e. superconductivity appears in the $d_{x^2 - y^2}$-channel and $T_c$ is enhanced by a large DOS. The main features distinguishing these ideas from more standard theories based on antiferromagnetic correlations are here discussed.

cond-mat↗

arXiv1995

Study of ARPES data and d-wave superconductivity using electronic models in two dimensions

We review the results of an extensive investigation of photoemission spectral weight using electronic models for the high-Tc superconductors. Here we show that some recently reported unusual features of the cuprates namely the presence of (i) flat bands, (ii) small quasiparticle bandwidths, and (iii) antiferromagnetically induced weight, have all a natural explanation within the context of holes moving in the presence of robust antiferromagnetic correlations. Introducing interactions among the hole carriers, a model is constructed which has ${\rm d_{x^2 - y^2}}$ superconductivity, an optimal doping of $\sim 15\%$ (caused by the presence of a large density of states at the top of the valence band), and a critical temperature $\sim 100K$.

cond-mat↗

arXiv1995

Photoemission spectra of ${\rm Sr_2 Cu O_2 Cl_2}$: a theoretical analysis

Recent angle resolved photoemission (ARPES) results for the insulating cuprate ${\rm Sr_2 Cu O_2 Cl_2}$ have provided the first experimental data which can be directly compared to the (theoretically) well--studied problem of a single hole propagating in an antiferromagnet. The ARPES results reported a small bandwidth, providing evidence for the existence of strong correlations in the cuprates. However, in the same experiment some discrepancies with the familiar 2D ${\rm t-J}$ model were also observed. Here we discuss a comparison between the ARPES results and the quasiparticle dispersion of both (i) the ${\rm t-t'-J}$ Hamiltonian and (ii) the three--band Hubbard model in the strong--coupling limit. Both model Hamiltonians show that the experimentally observed one--hole band structure can be approximately reproduced using reasonable values for ${\rm t'}$, or the direct oxygen hopping amplitude ${\rm t_{pp}}$.

cond-mat↗

arXiv1994

Quasiparticle dispersion of the t-J and Hubbard models

The spectral weight ${\rm A({\bf p},ω)}$ of the two dimensional ${\rm t-J}$ and Hubbard models has been calculated using exact diagonalization and quantum Monte Carlo techniques, at several densities ${\rm 1.0 \leq \langle n \rangle \leq 0.5}$. The photoemission $(ω< 0)$ region contains two dominant distinct features, namely a low-energy quasiparticle peak with bandwidth of order J, and a broad valence band peak at energies of order t. This behavior $persists$ away from half-filling, as long as the antiferromagnetic (AF) correlations are robust. The results give support to theories of the copper oxide materials based on the behavior of holes in antiferromagnets, and it also provides theoretical guidance for the interpretation of experimental photoemission data for the cuprates.

cond-mat↗