arXiv subjects

S. Ideta

Publications and source records attributed to S. Ideta.

At least 19 recordsLinked to original sources

arXiv2026

Tuning topological phase and Dirac point position via Pb and Sb substitution in Mn$_{1-x}$Pb$_{x}$(Bi$_{1-y}$Sb$_{y}$)$_{2}$Te$_{4}$

This study presents a systematic investigation of Mn$_{1-x}$Pb$_{x}$(Bi$_{1-y}$Sb$_{y}$)$_{2}$Te$_{4}$ crystals over a wide range of concentrations (x = 10-60%, y = 5-60%). It was found that the value of the bulk band gap is determined exclusively by the Pb concentration and it closes at Pb 40-50 %, which corresponds to a topological phase transition. The position of the Dirac point is determined by the Pb/Sb ratio, rather than the absolute Sb content. The magnetic properties depend on the dilution of the Mn sublattice by Pb and are weakly sensitive to Sb. We show that the simultaneous substitution of Mn and Bi allows independent control of the topological phase and the position of the Fermi level.

cond-mat.mtrl-sci↗

arXiv2024

Probing the Interaction Between Topological and Rashba-like Surface States in MnBi$_2$Te$_4$ Through Sn Doping

The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory (DFT) calculations and high-resolution ARPES. Our findings reveal that increasing Sn concentration shifts RSS downward in energy, enhancing their influence on the electronic structure near the Fermi level. ARPES validates these predictions, capturing the evolution of RSS and their hybridization with TSS. Orbital analysis shows RSS are localized within the first three Te-Bi-Te trilayers, dominated by Bi $p$-orbitals, with evidence of the orbital Rashba effect enhancing spin-momentum locking. At higher Sn concentrations, RSS penetrate deeper into the crystal, driven by Sn $p$-orbital contributions. These results position Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ as a tunable platform for tailoring electronic properties in spintronic and quantum technologies.

cond-mat.mtrl-sci↗

arXiv2024

The electronic structure of Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$: experimental evidence of topological phase transition

This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and circular dichroism (CD) measurements, we analyzed the evolution of the electronic structure across different Pb concentrations, with a focus on topological phase transitions (TPT) near x = 50 %. Key indicators of TPT include the presence or absence of topological surface states (TSS) and bulk band gap closure. The results show a gradual decrease of the bulk band gap in the electronic structure of MPBT up to x = 40 %, where it nearly vanishes, followed by a constant gap value between 40 - 60 %, and its reopening above 80 %, which is accompanied by a transition of the electronic structure of MPBT to a PbBi$_2$Te$_4$-like electronic structure. TSS were observed at x less than 30 % and greater than 80 %, as confirmed by CD and spin-resolved ARPES data, but were absent near x = 55 %, suggesting a distinct topological phase - possibly semi-metallic or a trivial insulator with a narrow gap phase. These findings demonstrate the tunability of the electronic structure of MPBT, making it a promising candidate for topological and spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Phase transitions, Dirac and WSM states in $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$

Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10$\%$ to 75$\%$. It was shown that when Ge concentration increases then the bulk band gap decreases and reaches zero plateau in the concentration range of 45$\%$-60$\%$ while non-topological surface states (TSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40$\%$. DFT calculations of $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ band structure were carried out to identify the nature of observed band dispersion features and to analyze a possibility of magnetic Weyl semimetal state formation in this system. These calculations were performed for both antiferromagnetic (AFM) and ferromagnetic (FM) ordering types while the spin-orbit coupling (SOC) strength was varied or a strain (compression or tension) along the $c$-axis was applied. Calculations show that two different series of topological phase transitions (TPTs) may be implemented in this system depending on the magnetic ordering. At AFM ordering transition between TI and trivial insulator phase goes through the Dirac semimetal state, whereas for FM phase such route admits three intermediate states instead of one (TI - Dirac semimetal - Weyl semimetal - Dirac semimetal - trivial insulator).

cond-mat.mtrl-sci↗

arXiv2022

Observation of the bands with $d_{xy}$ orbital character near the Fermi level in NdFeAs$_{1-x}$P$_{x}$O$_{0.9}$F$_{0.1}$ using angle-resolved photoemission spectroscopy

We studied the band structure of NdFeAs$_{1-x}$P$_{x}$O$_{0.9}$F$_{0.1}$ ($x$ = 0, 0.2, 0.4 and 0.6) using angle-resolved photoemission spectroscopy (ARPES) measurements. Two of the hole bands, $α_1$ $(d_{xz})$ and $α_3$ $(d_{z^2})$, were observed at the Brillouin zone center in the $P$-polarized light configuration, while the other two hole bands, $α_2$ $(d_{yz})$ and $γ$ $(d_{xy})$, were observed in the $S$-polarized alternative. The observed $γ$ band shifts downwards as $x$ increases, which is consistent with the theoretical prediction for the change in bond angle of As/P-Fe-As/P. Furthermore, a small amount of the $d_{xy}$ orbital component was observed at the same binding energy as that of the top of the $α_1$ band, thus indicating the band reconstruction of the originally degenerate $α_1$ and $α_2$ $(d_{xz}/d_{yz})$ bands by the unoccupied $d_{xy}$ band. The change in the energy level of the $α_1$ band top with $d_{xy}$ orbital character is accompanied by a $T_{c}$ upturn at $0.2 < x < 0.4$. The $T_{c}$ continues to increase as the $α_1$ band shifts downward, crossing the Fermi level. The incipient band with the $d_{xy}$ orbital character on its top could be an important ingredient for high $T_{c}$ 1111-type iron-based superconductors.

cond-mat.str-el↗

arXiv2021

Superconducting gap and pseudogap in the surface states of the iron-based superconductor PrFeAsO$_{1-y}$ studied by angle-resolved photoemission spectroscopy

In order to study the possible superconductivity at the polar surfaces of 1111-type iron-based superconductors, which is doped with a large amount of holes in spite of the electron doping in bulk materials, we have performed angle-resolved photoemission spectroscopy (ARPES) studies on superconducting PrFeAsO$_{1-y}$~crystals. We have indeed observed the opening of a superconducting gap on surface-derived hole pockets as well as on a bulk-derived hole pocket. The superconducting gap is found to open on the surface-derived hole pockets below the bulk $T_c$, which suggests that the surface superconductivity is possibly induced by proximity effect from the bulk. We have also observed the opening of a large pseudogap on the surface-derived hole pockets, which is similar to the pseudogap in 122-type bulk superconductors doped with a smaller amount of holes. This suggests that the opening of a large pseudogap is a characteristic property of hole-doped iron-based superconductors.

cond-mat.supr-con↗

arXiv2021

Van Hove Singularity and Lifshitz Transition in Thickness-Controlled Li-Intercalated Graphene

We demonstrate a new method to control the Fermi level around the van Hove singularity (VHS) in Li-intercalated graphene on the SiC substrate. By angle-resolved photoemission spectroscopy, we observed a clear Lifshitz transition in the vicinity of the VHS by increasing the graphene thickness. This behavior is unexpected in a free-standing Li-intercalated graphene model. The calculation including the substrate suggests that the surface state stabilizes the Fermi level around the VHS of the Dirac bands via hybridization. In addition, we found that a sizable Schottky barrier is formed between graphene and the substrate. These properties allow us to explore the electronic phase diagram around the VHS by controlling the thickness and electric field in the device condition.

cond-mat.mes-hall↗

arXiv2021

Nematicity in the pseudogap state of cuprate superconductors revealed by angle-resolved photoemission spectroscopy

The nature of the pseudogap and its relationship with superconductivity are one of the central issues of cuprate superconductors. Recently, a possible scenario has been proposed that the pseudogap state is a distinct phase characterized by spontaneous rotational symmetry breaking called "nematicity" based on transport and magnetic susceptibility measurements, where the symmetry breaking was observed below the pseudogap temperature $T^*$. Here, we report a temperature-dependent ARPES study of nematicity in slightly overdoped Bi${}_{1.7}$Pb${}_{0.5}$Sr${}_{1.9}$CaCu${}_2$O${}_{8+δ}$ triggered by a uniaxial strain applied along one of the Cu-O bond directions. While the nematicity was enhanced in the pseudogap state as in the previous studies, it was suppressed in the superconducting state. These results indicate that the pseudogap state is characterized by spontaneous rotational symmetry breaking and that the nematicity may compete with superconductivity. These new experimental insights may provide clues for the nature of the pseudogap and its relation to the superconductivity.

cond-mat.supr-con↗

arXiv2021

Extended superconducting dome of electron-doped cuprates after protect annealing revealed by ARPES

The electron-doped cuprates are usually characterized by a more robust antiferromagnetic phase and a much narrower superconducting (SC) dome than those of the hole-doped counterparts. Recently, bulk single crystals of Pr1.3-xLa0.7CexCuO4-δ (PLCCO) prepared by the protect annealing method have been studied extensively and revealed many intriguing properties that were different from those obtained from samples annealed by the conventional methods. Here, we report on a systematic angle-resolved photoemission spectroscopy study of PLCCO single crystals after protect annealing. The results indicate that the actual electron concentration (nFS ) estimated from the Fermi-surface area is significantly larger than the Ce concentration x and the new nFS-based SC dome of PLCCO is more extended towards the overdoped side than the x-based SC dome derived for samples prepared using the conventional annealing method.

cond-mat.supr-con↗

arXiv2020

Hybridization of Bogoliubov-quasiparticles between adjacent CuO$_2$ layers in the triple-layer cuprate Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+\delta}$ studied by ARPES

Hybridization of Bogoliubov quasiparticles (BQPs) between the CuO$_2$ layers in the triple-layer cuprate high-temperature superconductor Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+\delta}$ is studied by angle-resolved photoemission spectroscopy (ARPES). In the superconducting state, an anti-crossing gap opens between the outer- and inner-BQP bands, which we attribute primarily to interlayer single-particle hopping with possible contributions from interlayer Cooper pairing. We find that the $d$-wave superconducting gap of both BQP bands smoothly develops with momentum without abrupt jump in contrast to a previous ARPES study. Hybridization between the BQPs also gradually increases in going from the off-nodal to the anti-nodal region, which is explained by the momentum-dependence of the interlayer single-particle hopping. As possible mechanisms for the enhancement of the superconducting transition temperature, the hybridization between the BQPs, as well as the combination of phonon modes of the triple CuO$_2$ layers and spin fluctuations are discussed.

cond-mat.supr-con↗

arXiv2020

Devil's staircase transition of the electronic structures in CeSb

Solids with competing interactions often undergo complex phase transitions with a variety of long-periodic modulations. Among such transition, devil's staircase is the most complex phenomenon, and for it, CeSb is the most famous material, where a number of the distinct phases with long-periodic magnetostructures sequentially appear below the Neel temperature. An evolution of the low-energy electronic structure going through the devil's staircase is of special interest, which has, however, been elusive so far despite the 40-years of intense researches. Here we use bulk-sensitive angle-resolved photoemission spectroscopy and reveal the devil's staircase transition of the electronic structures. The magnetic reconstruction dramatically alters the band dispersions at each transition. We moreover find that the well-defined band picture largely collapses around the Fermi energy under the long-periodic modulation of the transitional phase, while it recovers at the transition into the lowest-temperature ground state. Our data provide the first direct evidence for a significant reorganization of the electronic structures and spectral functions occurring during the devil's staircase.

cond-mat.mtrl-sci↗

arXiv2019

$d$-wave superconducting gap observed in protect-annealed electron-doped cuprate superconductors Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_{4}$

For electron-doped cuprates, the strong suppression of antiferromagnetic spin correlation by efficient reduction annealing by the "protect-annealing" method leads to superconductivity not only with lower Ce concentrations but also with higher transition temperatures. To reveal the nature of this superconducting state, we have performed angle-resolved photoemission spectroscopy measurements of protect-annealed electron-doped superconductors Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_{4}$ and directly investigated the superconducting gap. The gap was found to be consistent with $d$-wave symmetry, suggesting that strong electron correlation persists and hence antiferromagnetic spin fluctuations remain a candidate that mediates Copper pairing in the protect-annealed electron-doped cuprates.

cond-mat.supr-con↗

arXiv2019

Non-trivial surface states of samarium hexaboride at the (111) surface

The peculiar metallic electronic states observed in the Kondo insulator, samarium hexaboride (SmB$_6$), has stimulated considerable attention among those studying non-trivial electronic phenomena. However, experimental studies of these states have led to controversial conclusions mainly to the difficulty and inhomogeneity of the SmB$_6$ crystal surface. Here, we show the detailed electronic structure of SmB$_6$ with angle-resolved photoelectron spectroscopy measurements of the three-fold (111) surface where only two inequivalent time-reversal-invariant momenta (TRIM) exist. We observe the metallic two-dimensional state was dispersed across the bulk Kondo gap. Its helical in-plane spin polarisation around the surface TRIM suggests that SmB$_6$ is topologically non-trivial, according to the topological classification theory for weakly correlated systems. Based on these results, we propose a simple picture of the controversial topological classification of SmB$_6$.

cond-mat.str-el↗

arXiv2019

Temperature-driven modification of surface electronic structure on bismuth, a topological border material

Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the $\bar{M}$ point of the surface Brillouin zone (SBZ). In contrast, the same branch merged to the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling.

cond-mat.mtrl-sci↗

arXiv2018

Change of Fermi surface states related with two different $T_{\rm c}$-raising mechanisms in iron pnictide superconductor

Evolution of Fermi surface (FS) states of NdFeAs$_{1-x}$P$_x$O$_{0.9}$F$_{0.1}$ single crystals with As/P substitution has been investigated. The critical temperature $T_{\rm c}$ and the power law exponent ($n$) of temperature-dependent resistivity ($ρ(T) = ρ_0 + AT^n$) show a clear correlation above $x=$0.2, suggesting that $T_{\rm c}$ is enhanced with increasing bosonic fluctuation in the same type of FS state. Around $x=$0.2, all the transport properties show anomalies, indicating that $x$$\sim$0.2 is the critical composition of drastic FS change. The angle resolved photoemission spectroscopy has more directly revealed the distinct change of FS around $x=$0.2, that one hole FS disappears at Brillouin zone center and the other FS with propeller like shape appears at zone corner with decreasing $x$. These results are indicative of the existence of two types of FS state with different nesting conditions that are related with two $T_{\rm c}$-rising mechanisms in this system.

cond-mat.supr-con↗

arXiv2018

Giant Rashba splitting of quasi-1D surface states on Bi/InAs(110)-(2$\times$1)

Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of the Rashba parameter ($α_{\rm R}$) reached quite a large value ($\sim$5.5 eVÅ). The present result would provide a fertile playground for further studies of the exotic electronic phenomena in 1D or Q1D systems with the spin-split electronic states as well as for advanced spintronic devices.

cond-mat.mtrl-sci↗

arXiv2017

Direct observation of heterogeneous valence state in Yb-based quasicrystalline approximants

We study the electronic structure of Tsai-type cluster-based quasicrystalline approximants, Au$_{64}$Ge$_{22}$Yb$_{14}$ (AGY-I), Au$_{63.5}$Ge$_{20.5}$Yb$_{16}$ (AGY-II), and Zn$_{85.4}$Yb$_{14.6}$ (Zn-Yb), by means of photoemission spectroscopy. In the valence band hard x-ray photoemission spectra of AGY-II and Zn-Yb, we separately observe a fully occupied Yb 4$f$ state and a valence fluctuation derived Kondo resonance peak, reflecting two inequivalent Yb sites, a single Yb atom in the cluster center and its surrounding Yb icosahedron, respectively. The fully occupied 4$f$ signal is absent in AGY-I containing no Yb atom in the cluster center. The results provide direct evidence for a heterogeneous valence state in AGY-II and Zn-Yb.

cond-mat.str-el↗

arXiv2017

Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface

One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronic and energy-saving devices.

cond-mat.mtrl-sci↗