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S. Ismail-Beigi

Publications and source records attributed to S. Ismail-Beigi.

3 recordsLinked to original sources

Orbital engineering in nickelate heterostructures driven by anisotropic oxygen hybridization rather than orbital energy levels

Resonant inelastic x-ray scattering is used to investigate the electronic origin of orbital polarization in nickelate heterostructures taking $\mathrm{LaTiO_3-LaNiO_3-3x(LaAlO_3)}$, a system with exceptionally large polarization, as a model system. We find that heterostructuring generates only minor changes in the Ni $3d$ orbital energy levels, contradicting the often-invoked picture in which changes in orbital energy levels generate orbital polarization. Instead, O $K$-edge x-ray absorption spectroscopy demonstrates that orbital polarization is caused by an anisotropic reconstruction of the oxygen ligand hole states. This provides an explanation for the limited success of theoretical predictions based on tuning orbital energy levels and implies that future theories should focus on anisotropic hybridization as the most effective means to drive large changes in electronic structure and realize novel emergent phenomena.

cond-mat.str-el

Resonant phonon coupling across the La{1-x}Sr{x}MnO{3}/SrTiO{3} interface

The transport and magnetic properties of correlated La{0.53}Sr{0.47}MnO{3} ultrathin films, grown epitaxially on SrTiO{3}, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and theory we show that the cusp is a result of resonant coupling between the charge carriers in the film and a soft phonon mode in the SrTiO{3}, mediated through oxygen octahedra in the film. The amplitude of the mode diverges towards the transition temperature, and phonons are launched into the first few atomic layers of the film affecting its electronic state.

cond-mat.mtrl-sci

Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3

We present low temperature magnetoresistance measurements of Ar-irradiated SrTiO3 under an applied electrostatic field. The electric field, applied through a back gate bias, modulates both the mobility and sheet density, with a greater effect on the former. For high mobilities, 3-dimensional orbital magnetoresistance is observed. For low mobilities, negative magnetoresistance that is consistent with the suppression of 2-dimensional weak-localization is observed. The crossover from 3 to 2-dimensional transport arises from a modulation in the carrier confinement, which is enhanced by the electric field dependent dielectric constant of SrTiO3. The implications of our results on the development of oxide electronic devices will be discussed.

cond-mat.mtrl-sci