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S. J. Oh

Publications and source records attributed to S. J. Oh.

3 recordsLinked to original sources

Photoemission Study of Rare-Earth Ditelluride Compounds (ReTe_2 : Re = La, Pr, Sm, and Gd)

We studied the electronic structure of rare-earth ditelluride (ReTe_2 : Re = La, Pr, Sm, and Gd) using photoemission spectroscopy. From the x-ray photoelectron spectroscopy (XPS) study of the 3d core levels of rare-earth elements, we found that all the rare earth elements are trivalent. We have also made theoretical calculations using the Gunnarsson and Schoenhammer approximation and multiplet calculations for the rare earth elements to find that the La and Gd~3d peaks are well explained using our calculations. There is no considerable change in the line-shape of the Te~3d peaks depending on different rare earth elements. On ther other hand, valence band spectra studied with the ultraviolet photoelectron spectroscopy (UPS) show a small change in the Te p band depending on rare-earth elements. According to the UPS data, LaTe_2 has very low carrier density at the Fermi level while SmTe_2 and PrTe_2 show strongly metallic band structure effects near the Fermi level.

cond-mat.str-el

Universal scaling of Hall resistivity in clean and moderately clean limits for Hg- and Tl-based superconductors

The mixed-state Hall resistivity and the longitudinal resistivity in HgBa_{2}CaCu_{2}O_{6}, HgBa_{2}Ca_{2}Cu_{3}O_{8}, and Tl_{2}Ba_{2}CaCu_{2}O_{8} thin films have been investigated as functions of the magnetic field up to 18 T. We observe the universal scaling behavior between ρ_{xy} and ρ_{xx} in the regions of the clean and the moderately clean limit. The scaling exponent βis 1.9 in the clean limit at high field and low temperature whereas βis 1.0 in the moderately clean limit at low field and high temperature, consistent with a theory based on the midgap states in the vortex cores. This finding implies that the Hall conductivity is also universal in Hg- and Tl-based superconductors.

cond-mat.supr-con

Temperature-scaling behavior of the Hall conductivity for Hg-based superconducting thin films

The Hall conductivities of HgBa_{2}CaCu_{2}O_{6+δ}and HgBa_{2}Ca_{2}Cu_{3}O_{8+δ} thin films are investigated for a magnetic field parallel to the c axis. The mixed-state Hall conductivity for these compounds is well described by σ_{xy}=C_{1}/H+C_{2}+C_{3}H. The prefactor C_1 shows a temperature dependence of the form C_1 = A(1-t)^n near T_c, where t=T/T_c is the reduced temperature. Contrary to the previous results, C_2 also follows a temperature-scaling behavior similar to that of the coefficient C_1. The observed value of n = 1.8 - 2.3 is comparable to the previously observed values for YBa_{2}Cu_{3}O_{7-δ} and La_{2-x}Sr_{x}CuO_{4}.

cond-mat.supr-con