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S. J. Tjung

Publications and source records attributed to S. J. Tjung.

4 recordsLinked to original sources

Surface Structures of Epitaxial B20 FeGe(-1-1-1) Thin Films via Scanning Tunneling Microscopy

We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer.

cond-mat.mes-hall

Crystalline hydrogenation of graphene by STM tip-induced field dissociation of H$_2$

We have developed a novel method for crystalline hydrogenation of graphene on the nanoscale. Molecular hydrogen was physisorbed at 5 K onto pristine graphene islands grown on Cu(111) in ultrahigh vacuum. Field emission local to the tip of a scanning tunneling microscope dissociates H$_2$ and results in hydrogenated graphene. At lower coverage, isolated point defects are found on the graphene and are attributed to chemisorbed H on top and bottom surfaces. Repeated H$_2$ exposure and field emission yielded patches and then complete coverage of a crystalline $\sqrt{3}$ $\times$ $\sqrt{3}$ R30° phase, as well as less densely packed 3 $\times$ 3 and 4 $\times$ 4 structures. The hydrogenation can be reversed by imaging with higher bias voltage.

cond-mat.mes-hall

Native defects in ultra-high vacuum grown graphene islands on Cu(111)

We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.

cond-mat.mes-hall

Modification of electronic surface states by graphene islands on Cu(111)

We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using \emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of image potential states is shifted toward lower energy over the graphene islands relative to Cu(111), indicating a decrease in the local work function, and the resonances have a much smaller linewidth, indicating reduced coupling to the bulk. In addition, we show the dispersion of the occupied Cu(111) Shockley surface state is influenced by the graphene layer, and both the band edge and effective mass are shifted relative to bare Cu(111).

cond-mat.mes-hall