arXiv subjects

S. J. van der Molen

Publications and source records attributed to S. J. van der Molen.

15 recordsLinked to original sources

arXiv2025

Unoccupied bands in the molybdenum dichalcogenides MoS$_2$, MoSe$_2$, and MoTe$_2$

We present angle-resolved reflected electron spectroscopy (ARRES) data for the three molybdenum-based transition metal dichalcogenides (TMDs) \mos, \mose, and \mote. To follow the changes as the series moves from S to Se to Te in more detail, we determine accurate IV-spectra for monolayers and bulk TMDs. These experimental data sets are then compared with theoretical predictions for both the unoccupied band structure and the scattering density of states. We find good agreement, especially for lower energies where inelastic effects are relatively unimportant. Furthermore, we identify a series of interlayer resonances for which the dependence of the hybridization effects on the layer count is observed. Although these resonances bear similarity to interlayer resonances in hBN and graphene, they differ in their character, being dominated by unoccupied $d$-states of the chalcogen-atoms. The unoccupied states studied and analyzed here play a key role in all processes that require an electron to temporarily reside in a state above the vacuum level, such as in photoemission and secondary electron emission experiments.

cond-mat.mes-hall↗

arXiv2024

A structural analysis of ordered Cs$_{3}$Sb films grown on single crystal graphene and silicon carbide substrates

Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam brightness. Ordering the crystalline structure of alkali antimonides has the potential to deliver higher brightness electron beams by reducing surface disorder and enabling the engineering of material properties at the level of atomic layers. In this report, we demonstrate the growth of ordered Cs$_{3}$Sb films on single crystal substrates 3C-SiC and graphene-coated 4H-SiC using pulsed laser deposition and conventional thermal evaporation growth techniques. The crystalline structures of the Cs$_{3}$Sb films were examined using reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD) diagnostics, while film thickness and roughness estimates were made using x-ray reflectivity (XRR). With these tools, we observed ordered domains in less than 10 nm thick films with quantum efficiencies greater than one percent at 530 nm. Moreover, we identify structural features such as Laue oscillations indicative of highly ordered films. We found that Cs$_{3}$Sb films grew with flat, fiber-textured surfaces on 3C-SiC and with multiple ordered domains and sub-nanometer surface roughness on graphene-coated 4H-SiC under our growth conditions. We identify the crystallographic orientations of Cs$_{3}$Sb grown on graphene-coated 4H-SiC substrates and discuss the significance of examining the crystal structure of these films for growing epitaxial heterostructures in future experiments.

cond-mat.mtrl-sci↗

arXiv2019

Non-universal Transverse Electron Mean Free Path through Few-layer Graphene

In contrast to the in-plane transport electron mean-free path in graphene, the transverse mean-free path has received little attention and is often assumed to follow the 'universal' mean-free path (MFP) curve broadly adopted in surface and interface science. Here we directly measure transverse electron scattering through graphene from 0 to 25 eV above the vacuum level both in reflection using Low Energy Electron Microscopy and in transmission using electron-Volt Transmission Electron Microscopy. From this data, we obtain quantitative MFPs for both elastic and inelastic scattering. Even at the lowest energies, the total MFP is just a few graphene layers and the elastic MFP oscillates with graphene layer number, both refuting the 'universal' curve. A full theoretical calculation taking the graphene band structure into consideration agrees well with experiment, while the key experimental results are reproduced even by a simple optical toy model.

cond-mat.mtrl-sci↗

arXiv2018

Stacking domains in graphene on silicon carbide: a pathway for intercalation

Graphene on silicon carbide (SiC) bears great potential for future graphene electronic applications because it is available on the wafer-scale and its properties can be custom-tailored by inserting various atoms into the graphene/SiC interface. It remains unclear, however, how atoms can cross the impermeable graphene layer during this widely used intercalation process. Here we demonstrate that, in contrast to the current consensus, graphene layers on SiC are not homogeneous, but instead composed of domains of different crystallographic stacking. We show that these domains are intrinsically formed during growth and that dislocations between domains dominate the (de)intercalation dynamics. Tailoring these dislocation networks, e.g. through substrate engineering, will increase the control over the intercalation process and could open a playground for topological and correlated electron phenomena in two-dimensional superstructures.

cond-mat.mtrl-sci↗

arXiv2017

Formation of a conducting LaAlO$_3$ / SrTiO$_3$ interface studied by low energy electron reflection during growth

The two-dimensional electron gas occurring between the band insulators SrTiO$_3$ and LaAlO$_3$ continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations, there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO$_3$ layer at the growth temperature (around 800 $^o$C) in oxygen (pressure around $5\times 10^{-5}$ mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in-situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO$_2$-rich surface and a conducting interface; or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.

cond-mat.mtrl-sci↗

arXiv2012

Intrinsic Instability of Aberration-Corrected Electron Microscopes

Aberration-corrected microscopes with sub-atomic resolution will impact broad areas of science and technology. However, the experimentally observed lifetime of the corrected state is just a few minutes. Here we show that the corrected state is intrinsically unstable; the higher its quality, the more unstable it is. Analyzing the Contrast Transfer Function near optimum correction, we define an 'instability budget' which allows a rational trade-off between resolution and stability. Unless control systems are developed to overcome these challenges, intrinsic instability poses a fundamental limit to the resolution practically achievable in the electron microscope.

physics.ins-det↗

arXiv2011

Bulk and Surface Nucleation Processes in Ag2S Conductance Switches

We studied metallic Ag formation inside and on the surface of Ag2S thin films, induced by the electric field created with a STM tip. Two clear regimes were observed: cluster formation on the surface at low bias voltages, and full conductance switching at higher bias voltages (V > 70mV). The bias voltage at which this transition is observed is in agreement with the known threshold voltage for conductance switching at room temperature. We propose a model for the cluster formation at low bias voltage. Scaling of the measured data with the proposed model indicates that the process takes place near steady state, but depends on the STM tip geometry. The growth of the clusters is confirmed by tip retraction measurements and topography scans. This study provides improved understanding of the physical mechanisms that drive conductance switching in solid electrolyte memristive devices.

cond-mat.mtrl-sci↗

arXiv2011

Transition Voltage Spectroscopy and the Nature of Vacuum Tunneling

Transition Voltage Spectroscopy (TVS) has been proposed as a tool to analyze charge transport through molecular junctions. We extend TVS to Au-vacuum-Au junctions and study the distance dependence of the transition voltage V_t(d) for clean electrodes in cryogenic vacuum. On the one hand, this allows us to provide an important reference for V_t(d)-measurements on molecular junctions. On the other hand, we show that TVS forms a simple and powerful test for vacuum tunneling models.

cond-mat.mes-hall↗

arXiv2009

Bistable hysteresis and resistance switching in hydrogen gold junctions

Current-voltage characteristics of H2-Au molecular junctions exhibit intriguing steps around a characteristic voltage of 40 mV. Surprisingly, we find that a hysteresis is connected to these steps with a typical time scale > 10 ms. This time constant scales linearly with the power dissipated in the junction beyond an ofset power P_s = IV_s. We propose that the hysteresis is related to vibrational heating of both the molecule in the junction and a set of surrounding hydrogen molecules. Remarkably, we can engineer our junctions such that the hysteresis' characteristic time becomes >days. We demonstrate that reliable switchable devices can be built from such junctions.

cond-mat.mes-hall↗

arXiv2008

Single atom adhesion in optimized gold nanojunctions

We study the interaction between single apex atoms in a metallic contact, using the break junction geometry. By carefully 'training' our samples, we create stable junctions in which no further atomic reorganization takes place. This allows us to study the relation between the so-called jump out of contact (from contact to tunnelling regime) and jump to contact (from tunnelling to contact regime) in detail. Our data can be fully understood within a relatively simple elastic model, where the elasticity k of the electrodes is the only free parameter. We find 5 < k < 32 N/m. Furthermore, the interaction between the two apex atoms on both electrodes, observed as a change of slope in the tunnelling regime, is accounted for by the same model.

cond-mat.mes-hall↗

arXiv2007

Controlled formation of metallic nanowires via Au nanoparticle ac trapping

Applying ac voltages, we trapped gold nanoparticles between microfabricated electrodes under well-defined conditions. We demonstrate that the nanoparticles can be controllably fused together to form homogeneous gold nanowires with pre-defined diameters and conductance values. Whereas electromigration is known to form a gap when a dc voltage is applied, this ac technique achieves the opposite, thereby completing the toolkit for the fabrication of nanoscale junctions.

cond-mat.mes-hall↗

arXiv2006

The role of Joule heating in the formation of nanogaps by electromigration

We investigate the formation of nanogaps in gold wires due to electromigration. We show that the breaking process will not start until a local temperature of typically 400 K is reached by Joule heating. This value is rather independent of the temperature of the sample environment (4.2-295 K). Furthermore, we demonstrate that the breaking dynamics can be controlled by minimizing the total series resistance of the system. In this way, the local temperature rise just before break down is limited and melting effects are prevented. Hence, electrodes with gaps < 2 nm are easily made, without the need of active feedback. For optimized samples, we observe quantized conductance steps prior the gap formation.

cond-mat.mtrl-sci↗

arXiv2006

The Magneto-coulomb effect in spin valve devices

We discuss the influence of the magneto-coulomb effect (MCE) on the magnetoconductance of spin valve devices. We show that MCE can induce magnetoconductances of several per cents or more, dependent on the strength of the coulomb blockade. Furthermore, the MCE-induced magnetoconductance changes sign as a function of gate voltage. We emphasize the importance of separating conductance changes induced by MCE from those due to spin accumulation in spin valve devices.

cond-mat.mes-hall↗

arXiv2005

Separating spin and charge transport in single wall carbon nanotubes

We demonstrate spin injection and detection in single wall carbon nanotubes using a 4-terminal, non-local geometry. This measurement geometry completely separates the charge and spin circuits. Hence all spurious magnetoresistance effects are eliminated and the measured signal is due to spin accumulation only. Combining our results with a theoretical model, we deduce a spin polarization at the contacts of approximately 25 %. We show that the magnetoresistance changes measured in the conventional two-terminal geometry are dominated by effects not related to spin accumulation.

cond-mat.mes-hall↗

arXiv1997

Suppression of the Coulomb interaction contribution to the conductance by a parallel magnetic field

The Coulomb interaction contribution to the conductance is investigated in a phase-coherent disordered 2-dimensional electron gas, which resistance can be varied by an overall gate electrode. Its magnitude of dGeei=-0.3 e^2/h is obtained by applying a bias voltage to suppress the Coulomb anomaly. In contrast to theoretical predictions, dGeei is suppressed by a parallel magnetic field. The zero-bias magnetoresistance exhibits reproducible fluctuations in perpendicular magnetic fields on a field scale much larger than that expected for universal conductance fluctuations, which might be attributed to fluctuations in the Coulomb interaction contribution.

cond-mat.mes-hall↗