arXiv subjects

S. Jana

Publications and source records attributed to S. Jana.

13 recordsLinked to original sources

arXiv2026

Electronic bistability, discontinuous switching and stochasticity in a two-dimensional semiconductor

Bistability - two stable electronic states under the same bias - underlies switching and memory, but is usually absent in transistors and must be engineered through material means: doped tunnel junctions, filaments in memristors, or phase transitions. Here we demonstrate a transistor with intrinsic electronic bistability in a single chemically homogeneous crystal. In dual-gated black phosphorus, whose band gap narrows under a perpendicular electric field due to a giant Stark effect, the gates not only modulate carrier density but also reshape the band profile, forming interband tunnel junctions in the channel. Transport across the two-gate parameter space reveals competing conduction regimes - diffusive, two tunnelling channels and Zener breakdown - whose interplay produces negative differential conductance and transconductance, discontinuous switching, and hysteresis with the state set by gate history. Moreover, the switching remains intrinsically stochastic, yet statistically stable within a narrow range of gate voltages, providing an electrically programmable source of randomness. Devices based on this principle should be realisable in other two-dimensional semiconductors, opening a route to next-generation computing architectures in which nonlinearity, switching, memory and stochasticity are integrated within a single electrostatically programmable element.

cond-mat.mes-hall↗

arXiv2026

Correlated Insulator Moir\'e Bolometer

Light incident on an insulator is generally not expected to turn it into a metal without invoking intense ultrafast excitation that leads to transient structural transitions. Here we show that magic-angle twisted bilayer graphene tuned to half filling of the moir\'e band provides a notable exception to this expectation. We find that weak beam of long-wavelength photons, with energies comparable to the flat-band width, selectively heat the low-heat-capacity electronic subsystem, thereby suppressing the correlated gap. This produces a giant resistance change governed not by a persistent photocarrier population, but by the extreme sensitivity of a many-body correlated gap to weak electronic heating. The resulting photon-driven insulator-to-metal transition produces a broadband low-noise photoresponse with voltage responsivity exceeding millivolts per nW of absorbed power. The mechanism is dual to superconducting hot-electron response: radiation-heated electrons suppress a many-body order, but in reverse the correlated insulator melts into a metal, providing robustness to magnetic fields of several tesla and a sharp insulator-to-metal resistive contrast. Our results establish correlated flat-band systems as a platform for ultra-sensitive detection of faint long-wavelength radiation.

cond-mat.mes-hall↗

arXiv2026

Observation of Berry curvature fluctuations from incipient polar order in an oxide interface

Diagnosing hidden local orders at buried interfaces remains a central challenge in the design and characterization of quantum materials. Second-order electrical responses, such as the nonlinear Hall effect, probe inversion-symmetry-breaking terms invisible to linear transport, offering a direct window into these nanoscale environments via the quantum geometry of Bloch electrons. Here, we utilize $\text{KTaO}_3$, a complex oxide driven by strong tantalum $5d$ spin-orbit coupling and interfacial inversion symmetry breaking, to demonstrate that second-harmonic resistivities exhibit large, reproducible mesoscopic fluctuations. Remarkably, these fluctuations persist in macroscopically large ($200\,\mu\text{m}$) devices and are ubiquitous across all studied surface orientations, even where macroscopic conductivity strictly adheres to underlying crystal symmetries. We propose that these robust, magnetic-field-driven interference patterns arise from local structural symmetry breaking, driven by incipient ferroelectric polarization pinned to the interfacial impurity landscape. This defect-pinned polar mechanism is firmly supported by the signal's suppression above $10\text{ K}$ due to phase decoherence, and a complete loss of mesoscopic memory upon thermal cycling above $40\text{ K}$. By linking quantum geometry to dynamic lattice ordering, our findings establish nonlinear mesoscopic transport as a powerful new characterization tool, capable of revealing local polar tendencies and hidden structural orders in complex materials that remain fundamentally invisible to conventional probes.

cond-mat.mes-hall↗

arXiv2026

Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies

Graphene Josephson junctions (JJ) provide a promising platform for ultra-broadband quantum sensing of light owing to graphene's frequency-independent absorption, vanishing electronic heat capacity, and weak electron-phonon coupling, which enable rapid suppression of the critical current through radiation-induced electron heating. Existing investigations have been confined to the microwave and infrared regimes, where competing detector technologies are already established; by contrast, the terahertz (THz) band - where sensitivity is most urgently lacking and no mature quantum sensor exists - has remained largerly unexplored. Here we demonstrate a strong photoresponse of graphene JJs at THz frequencies, establishing a first experimental step towards graphene-based THz quantum sensors. Under low-intensity illumination, we observe a pronounced suppression of the critical current that generates a strong photovoltage (Vph) under current bias. By tracking this Vph and independently measuring the electron temperature as a function of absorbed power, we extract a responsivity of 88 kV W^-1 and a noise-equivalent power of 45 aW Hz^-1/2 at 1.7 K. Furthermore, gate tunability of our JJ enables access to a regime where hysteretic current-voltage characteristics persist up to 0.9 K, offering a potential route toward single-photon THz detection beyond millikelvin (mK) temperatures. These findings establish graphene JJ as a versatile platform for broadband cryogenic radiation sensing and point towards their use as quantum sensors at THz frequencies.

cond-mat.mes-hall↗

arXiv2025

Enhanced Terahertz Thermoelectricity via Engineered van Hove Singularities and Nernst Effect in Moir\'e Superlattices

Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near van Hove singularities (VHS), though these are usually difficult to access in conventional materials. Here we show that moir\'e band engineering unlocks these singularities for THz optoelectronics. Using 2D moir\'e structures as a model system, we observe strong enhancement of the THz photothermoelectric response in monolayer and bilayer graphene superlattices when the Fermi level is tuned to band singularities. Applying a relatively small magnetic field further boosts the response through the THz-driven Nernst effect, a transverse thermoelectric current driven by the THz-induced temperature gradient. Our results establish moir\'e superlattices as a versatile platform for THz thermoelectricity and highlight engineered band structures as a route to high-performance THz optoelectronic devices.

cond-mat.mes-hall↗

arXiv2025

First experiments with ultrashort, circularly polarized soft X-ray pulses at FLASH2

Time-resolved absorption spectroscopy as well as magnetic circular dichroism with circularly polarized soft X-rays (XAS and XMCD) are powerful tools to probe electronic and magnetic dynamics in magnetic materials element- and site-selectively. Employing these methods, groundbreaking results have been obtained for instance for magnetic alloys, which helped to fundamentally advance the field of ultrafast magnetization dynamics. At the free electron laser facility FLASH key capabilities for ultrafast XAS and XMCD experiments have recently improved: In an upgrade, an APPLE-III helical afterburner undulator was installed at FLASH2 in September 2023. This installation allows for the generation of circularly polarized soft X-ray pulses with a duration of a few tens of femtoseconds covering the L3,2-edges of the important 3d transition metal elements with pulse energies of several uJ. Here, we present first experimental results with such ultrashort X-ray pulses from the FL23 beamline employing XMCD at the L-edges of the 3d metals, Co, Fe and Ni. We obtain significant dichroic difference signals indicating a degree of circular polarization close to 100%. With the pulse-length preserving monochromator at beamline FL23 and an improved pump laser setup, FLASH can offer important and efficient experimental instrumentation for studies on ultrafast spin dynamics in 3d transition metals, multilayers, and alloys.

cond-mat.mtrl-sci↗

arXiv2024

Quotient of Topological Ternary Semigroup

In this paper we introduce a quotient structure on topological ternary semigroup by defining a congruence suitably. We have found conditions under which this quotient structure becomes a topological ternary semigroup. We have also obtained conditions that make this quotient a topological ternary group, whenever the base structure is a topological ternary group.

math.GR↗

arXiv2024

Optical control of 4f orbital state in rare-earth metals

A change of orbital state alters the coupling between ions and their surroundings drastically. Orbital excitations are hence key to understand and control interaction of ions. Rare-earth (RE) elements with strong magneto-crystalline anisotropy (MCA) are important ingredients for magnetic devices. Thus, control of their localized 4f magnetic moments and anisotropy is one major challenge in ultrafast spin physics. With time-resolved X-ray absorption and resonant inelastic scattering experiments, we show for Tb metal that 4f-electronic excitations out of the ground state multiplet occur after optical pumping. These excitations are driven by inelastic 5d-4f-electron scattering, alter the 4f-orbital state and consequently the MCA with important implications for magnetization dynamics in 4f-metals, and more general for the excitation of localized electronic states in correlated materials.

cond-mat.mtrl-sci↗

arXiv2022

Mapping the energy-time landscape of spins with helical X-rays

Unveiling the key mechanisms that determine optically driven spin dynamics is essential both to probe the fundamental nature of ultrafast light-matter interactions, but also to drive future technologies of smaller, faster, and more energy efficient devices. Essential to this task is the ability to use experimental spectroscopic tools to evidence the underlying energy- and spin-resolved dynamics of non-equilibrium electron occupations. In this joint theory and experimental work, we demonstrate that ultrafast helicity-dependent soft X-ray absorption spectroscopy (HXAS) allows access to spin-, time- and energy specific state occupation after optical excitation. We apply this method to the prototype transition metal ferromagnet cobalt and find convincing agreement between theory and experiment. The richly structured energy-resolved spin dynamics unveil the subtle interplay and characteristic time scales of optical excitation and spin-orbit induced spin-flip transitions in this material: the spin moment integrated in an energy window below the Fermi level first exhibits an ultrafast increase as minority carriers are excited by the laser pulse, before it is reduced as spin-flip process in highly localized, low energy states start to dominate. The results of this study demonstrate the power of element specific transient HXAS, placing it as a potential new tool for identifying and determining the role of fundamental processes in optically driven spin dynamics in magnetic materials.

cond-mat.mtrl-sci↗

arXiv2020

Ultrafast magnetization dynamics in half-metallic Co$_2$FeAl Heusler alloy

We report on optically induced, ultrafast magnetization dynamics in the Heusler alloy $\mathrm{Co_{2}FeAl}$, probed by time-resolved magneto-optical Kerr effect. Experimental results are compared to results from electronic structure theory and atomistic spin-dynamics simulations. Experimentally, we find that the demagnetization time ($τ_{M}$) in films of $\mathrm{Co_{2}FeAl}$ is almost independent of varying structural order, and that it is similar to that in elemental 3d ferromagnets. In contrast, the slower process of magnetization recovery, specified by $τ_{R}$, is found to occur on picosecond time scales, and is demonstrated to correlate strongly with the Gilbert damping parameter ($α$). Our results show that $\mathrm{Co_{2}FeAl}$ is unique, in that it is the first material that clearly demonstrates the importance of the damping parameter in the remagnetization process. Based on these results we argue that for $\mathrm{Co_{2}FeAl}$ the remagnetization process is dominated by magnon dynamics, something which might have general applicability.

cond-mat.mtrl-sci↗

arXiv2018

Doping induced site-selective Mott insulating phase in LaFeO$_3$

Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature superconducting phases. In manganites, doping results in exotic physics such as insulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital- or charge-ordered (CO) or charge-disproportionate (CD) states. In most oxides, antiferromagnetic order and charge-disproportionation are asssociated with insulating behavior. Here we report the realization of a unique physical state that can be induced by Mo doping in LaFeO$_3$: the resulting metallic state is a site-selective Mott insulator where itinerant electrons evolving in low-energy Mo states coexist with localized carriers on the Fe sites. In addition, a local breathing-type lattice distortion induces charge disproportionation on the latter, without destroying the antiferromagnetic order. A state, combining antiferromangetism, metallicity and CD phenomena is rather rare in oxides and may be of utmost significance for future antiferromagnetic memory devices.

cond-mat.str-el↗

arXiv2018

Inhomogeneous magnon scattering during ultrafast demagnetization

Ni$_{0.8}$Fe$_{0.2}$ (Py) and Py alloyed with Cu exhibit intriguing ultrafast demagnetization behavior, where the Ni magnetic moment shows a delayed response relative to the Fe, an effect which is strongly enhanced by Cu alloying. We have studied a broad range of Cu concentrations to elucidate the effects of Cu alloying in Py. The orbital/spin magnetic moment ratios are largely unaffected by Cu alloying, signifying that Cu-induced changes in the ultrafast demagnetization are not related to spin-orbit interactions. We show that magnon diffusion can explain the delayed Ni response, which we attribute to an enhanced magnon generation rate in the Fe sublattice relative to the Ni sublattice. Furthermore, Py exhibits prominent RKKY-like exchange interactions, which are strongly enhanced between Fe atoms and diminished between Ni atoms by Cu alloying. An increased Fe magnon scattering rate is expected to occur concurrently with this increased Fe-Fe exchange interaction, supporting the results obtained from the magnon diffusion model.

cond-mat.mtrl-sci↗

arXiv2015

Sputtering based epitaxial growth and modeling of Cu/Si thin films

Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into the growth mechanisms of the films. A modeling has been done on the epitaxial thin film growth with sputtering process. The parameters during sputtering like, sputtering yield, pressure, temperature, current density, deposition time were related and an attempt has been made to analyze the sputtering process.

cond-mat.mtrl-sci↗