arXiv subjects

S. Joseph Poon

Publications and source records attributed to S. Joseph Poon.

27 records · Page 2Linked to original sources

arXiv2017

Ballistic transport of long wavelength phonons and thermal conductivity accumulation in nanograined silicon-germanium alloys

Computationally efficient modeling of the thermal conductivity of materials is crucial to thorough experimental planning and theoretical understanding of thermal properties. We present a modeling approach in this work that utilizes frequency-dependent effective medium to calculate lattice thermal conductivity of nanostructured solids. The method accurately predicts a significant reduction in the thermal conductivity of nanostructured Si80Ge20 systems, along with previous reported thermal conductivities in nanowires and nanoparticles-in-matrix materials. We use our model to gain insight into the role of long wavelength phonons on the thermal conductivity of nanograined silicon-germanium alloys. Through thermal conductivity accumulation calculations with our modified effective medium model, we show that phonons with wavelengths much greater than the average grain size will not be impacted by grain boundary scattering, counter to the traditionally assumed notion that grain boundaries in solids will act as diffusive interfaces that will limit long wavelength phonon transport. This is further supported through a modulation frequency dependent thermal conductivity as measured with time-domain thermoreflectance.

cond-mat.mes-hall↗

arXiv2017

High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys

Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was found to increase the Seebeck coefficient in the temperature range 300-1000 K, consistent with a resonant doping scheme. In contrast, Nb and Ta act as normal n-type dopants, as evident by the systematic decrease in electrical resistivity and Seebeck coefficient. The combination of enhanced Seebeck coefficient due to the presence of V resonant states and the reduced thermal conductivity has led to a state-of-the-art ZT of 1.3 near 850 K in n-type (Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.

cond-mat.mtrl-sci↗

arXiv2016

Micromagnetic Simulation of Amorphous Ferrimagnetic TbFeCo Films with Exchange Coupled Nanophases

Amorphous ferrimagnetic TbFeCo thin films are found to exhibit exchange bias effect near the compensation temperature by magnetic hysteresis loop measurement. The observed exchange anisotropy is believed to originate from the exchange interaction between the two nanoscale amorphous phases distributed within the films. Here, we present a computational model of phase-separated TbFeCo using micromagnetic simulation. Two types of cells with different Tb concentration are distributed within the simulated space to obtain a heterogeneous structure consisting of two nanoscale amorphous phases. Each cell contains separated Tb and FeCo components, forming two antiferromagnetically coupled sublattices. Using this model, we are able to show the existence of exchange bias effect, and the shift in hysteresis loops is in agreement with experiment. The micromagnetic model developed herein for a heterogeneous magnetic material may also account for some recent measurements of exchange bias effect in crystalline films.

cond-mat.mes-hall↗

arXiv2015

Exchange Bias and Bistable Magneto-Resistance States in Amorphous TbFeCo thin Films

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

cond-mat.mtrl-sci↗

arXiv2014

First Principles Calculation of Elastic Moduli of Early-Late Transition Metal Alloys

Motivated by interest in the elastic properties of high strength amorphous metals, we examine the elastic properties of select crystalline phases. Using first principles methods, we calculate elastic moduli in various chemical systems containing transition metals, specifically early (Ta,W) and late (Co,Ni). Theoretically predicted alloy elastic properties are verified for Ni-Ta by comparison with experimental measurements using resonant ultrasound spectroscopy. Comparison of our computed elastic moduli with effective medium theories shows that alloying leads to enhancement of bulk moduli relative to averages of the pure elements, and considerable deviation of predicted and computed shear moduli. Specifically, we find an enhancement of bulk modulus relative to effective medium theory and propose a candidate system for high strength, ductile amorphous alloys. Trends in the elastic properties of chemical systems are analyzed using force constants, electronic densities of state and Crystal Overlap Hamilton Populations. We interpret our findings in terms of the electronic structure of the alloys.

cond-mat.mtrl-sci↗

arXiv2013

Structural and magnetic properties of Cr-diluted CoFeB

The crystallization process and the magnetization of Cr diluted CoFeB was investigated in both ribbon samples and thin film samples with Cr content up to 30 at. %. A primary crystallization of bcc phase from an amorphous precursor in ribbon samples was observed when the annealing temperature rose to between 421 oC and 456 oC, followed by boron segregation at temperatures between 518 oC and 573 oC. The two onset crystallization temperatures showed strong dependences on both Cr and B concentrations. The impact of Cr concentration on the magnetic properties including a reduced saturation magnetization and an enhanced coercive field was also observed. The magnetizations of both ribbon samples and thin film samples were well fitted using the generalized Slater-Pauling curve with modified moments for B (-0.94 μB) and Cr (-3.6 μB). Possible origins of the enhanced coercive field were also discussed. We also achieved a damping parameter in CoFeCrB thin films at the same level as Co40Fe40B20, much lower than the value reported for CoFeCrB films previously. The results suggest a possible advantage of CoFeCrB in reducing the critical switching current density in Spin Transfer Torque Random Access Memory (STT-RAM).

cond-mat.mtrl-sci↗

arXiv2013

Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach

It has been demonstrated that InSb nanoinclusions, which are formed in situ, can simultaneously improve all three individual thermoelectric properties of the n-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al., Acta Mater. 58, 4795 (2010)]. In the work presented herein, we have adopted the same approach to the p-type half Heusler compound Ti(Co,Fe)Sb. The results of resistivity, Seebeck coefficient, thermal conductivity, and Hall coefficient measurements indicate that the combined high mobility electron injection, low energy electron filtering, and boundary scattering, again, lead to a simultaneous improvement of all three individual thermoelectric properties: enhanced Seebeck coefficient and electrical conductivity as well as reduced lattice thermal conductivity. A figure of merit of ZT=0.33 was attained at 900 K for the sample containing 1 atomic percent InSb nanoinclusions, a 450 percent improvement over the nanoinclusion-free sample. This represents a rare case that the same nanostructuring approach successfully works for both p-type and n-type thermoelectric materials of the same class, hence pointing to a promising materials design route for higher performance half-Heusler materials in the future and hopefully will realize similar improvement in TE devices based on such half Heusler alloys.

cond-mat.mtrl-sci↗

arXiv2013

Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface

Epitaxial growth of Co20Fe50Ge30 thin film on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of CoFeGe well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy (PMA) was achieved in the MgO/CoFeGe/MgO structure with an optimized magnetic anisotropy energy density (K) of 3 106 erg/cm3. The magnetic anisotropy is found to depend strongly on the thickness of the MgO and CoFeGe layers, indicating that the PMA of CoFeGe is contributed by the interfacial anisotropy between CoFeGe and MgO. With reported low damping constant, CoFeGe films are promising spintronic materials for achieving low switching current.

cond-mat.mtrl-sci↗

arXiv2013

Amorphous GdFeCo Films Exhibiting Large and Tunable Perpendicular Magnetic Anisotropy

We report the compositional and temperature dependence of magnetic compensation in amorphous GdFeCo films. Magnetic compensation is attributed to the competition between antiferromagnetic coupling of rare-earth with transition-metal (TM) ions and ferromagnetic interaction between the TM ions. The low-Gd region from 20 to 34 at. % was found to exhibit compensation phenomena characterized by a low saturation magnetization and perpendicular magnetic anisotropy (PMA) near the compensation temperature. Compensation temperature was not observed in previously unreported high-Gd region from 52 to 59 at. %, in qualitative agreement with results from recent model calculations. However, low magnetization was achieved at room temperature, accompanied by a large PMA with coercivity reaching ~6.6 kOe. The observed perpendicular magnetic anisotropy of amorphous GdFeCo films probably has a structural origin consistent with certain aspects of the atomic-scale anisotropy. Our findings have broadened the composition range of transition metal-rare earth alloys for designing PMA films, making it attractive for tunable magnetic anisotropy in nanoscale devices.

cond-mat.mtrl-sci↗