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S. Lebègue

Publications and source records attributed to S. Lebègue.

15 recordsLinked to original sources

Solving the Schrödinger Equation in the Configuration Space with Generative Machine Learning

The configuration interaction approach provides a conceptually simple and powerful approach to solve the Schrödinger equation for realistic molecules and materials but is characterized by an unfavourable scaling, which strongly limits its practical applicability. Effectively selecting only the configurations that actually contribute to the wavefunction is a fundamental step towards practical applications. We propose a machine learning approach that iteratively trains a generative model to preferentially generate the important configurations. By considering molecular applications it is shown that convergence to chemical accuracy can be achieved much more rapidly with respect to random sampling or the Monte Carlo configuration interaction method. This work paves the way to a broader use of generative models to solve the electronic structure problem.

physics.chem-ph

Anisotropic thermal expansion of bismuth from first principles

Some anisotropy in both mechanical and thermodynamical properties of bismuth is expected. A combination of density functional theory total energy calculations and density functional perturbation theory in the local density approximation is used to compute the elastic constants at 0 K using a finite strain approach and the thermal expansion tensor in the quasiharmonic approximation. The overall agreement with experiment is good. Furthermore, the anisotropy in the thermal expansion is found to arise from the anisotropy in both the directional compressibilities and the directional Grüneisen functions.

cond-mat.mtrl-sci

Dispersion Corrected Structural Properties and Quasiparticle Band Gaps of Several Organic Energetic Solids

We have performed {\it ab initio} calculations for a series of energetic solids to explore their structural and electronic properties. To evaluate the ground state volume of these molecular solids, different dispersion correction methods were accounted in DFT, namely the Tkatchenko-Scheffler method (with and without self-consistent screening), Grimme's methods (D2, D3(BJ)) and the vdW-DF method. Our results reveals that dispersion correction methods are essential in understanding these complex structures with van der Waals interactions and hydrogen bonding. The calculated ground state volumes and bulk moduli show that the performance of each method is not unique, and therefore a careful examination is mandatory for interpreting theoretical predictions. This work also emphasizes the importance of quasiparticle calculations in predicting the band gap, which is obtained here with the GW approximation. We find that the obtained band gaps are ranging from 4 to 7 eV for the different compounds, indicating their insulating nature. In addition, we show the essential role of quasiparticle band structure calculations to correlate the gap with the energetic properties.

cond-mat.mtrl-sci

Electron correlations in Mn$_x$Ga$_{1-x}$As as seen by resonant electron spectroscopy and dynamical mean field theory

After two decades from the discovery of ferromagnetism in Mn-doped GaAs, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of Mn-doped GaAs. The experimental data are obtained through the differences between off- and on-resonance photo-emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean-field theory (LDA+DMFT), using exact diagonalisation as impurity solver. Theory is found to accurately reproduce measured data, and illustrates the importance of correlation effects. Our results demonstrate that the Mn states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits off from the valence band edge, while the induced holes seem located primarily around the Mn impurity.

cond-mat.str-el

Structural, elastic, optical properties and quasiparticle band structure of solid cyanuric triazide

In this letter, we report the structural, elastic, and quasiparticle band structure of cynauric triazide. The structural properties using a dispersion corrected method to treat van der Waals (vdW) forces offers a significant improvement in the description of the ground state properties. The predicted bulk modulus from the equation of state and the elastic constants are consistent and the magnitude lies in the order of secondary explosives. Then, the G$_0$W$_0$ approximation is used to study the band structure and an indirect band gap of 6.33 eV is obtained. Finally, we have calculated the optical and detonation characteristics at ambient pressure.

cond-mat.mtrl-sci

Structural, vibrational, and quasiparticle band structure of 1, 1 - diamino-2, 2 - dinitroethelene from ab-initio calculations

The effect of pressure on the structural and vibrational properties of the layered molecular crystal 1,1-diamino-2,2-dinitroethelene (FOX-7) are explored by first principles calculations. We observe significant changes in the calculated structural properties with different corrections for treating van der Waals interactions to Density Functional Theory (DFT), as compared with standard DFT functionals. In particular, the calculated ground state lattice parameters, volume and bulk modulus obtained with Grimme's scheme are found to agree well with experiments. The calculated vibrational frequencies demonstrates the dependence of the intra and inter-molecular interactions in FOX-7 under pressure. In addition, we also found a significant increment in the N-H...O hydrogen bond strength under compression. This is explained by the change in bond lengths between nitrogen, hydrogen and oxygen atoms, as well as calculated IR spectra under pressure. Finally, the computed band gap is about 2.3 eV with GGA, and is enhanced to 5.1 eV with the GW approximation, which reveals the importance of performing quasiparticle calculations in high energy density materials.

cond-mat.mtrl-sci

Binding and interlayer force in the near-contact region of two graphite slabs: experiment and theory

Via a novel experiment, Liu \emph{et al.} [Phys. Rev. B, {\bf 85}, 205418 (2012)] estimated the graphite binding energy, specifically the cleavage energy, an important physical property of bulk graphite. We re-examine the data analysis and note that within the standard Lennard-Jones model employed, there are difficulties in achieving internal consistency in the reproduction of the graphite elastic properties. By employing similar models which guarantee consistency with the elastic constant, we find a wide range of model dependent binding energy values from the same experimental data. We attribute some of the difficulty in the determination of the binding energy to: i) limited theoretical understanding of the van der Waals dispersion of graphite cleavage, ii) the mis-match between the strong bending stiffness of the graphite-SiO$_2$ cantilever and the weak asymptotic inter-layer forces that are integrated over to produce the binding energy. We find, however, that the data does support determination of a maximum inter-layer force that is relatively model independent. We conclude that the peak force per unit area is $1.1 \pm 0.15$GPa for cleavage, and occurs at an inter-layer spacing of $0.377\pm 0.013$nm.

cond-mat.mtrl-sci

Dispersion corrections in graphenic systems: a simple and effective model of binding

We combine high-level theoretical and \emph{ab initio} understanding of graphite to develop a simple, parametrised force-field model of interlayer binding in graphite, including the difficult non-pairwise-additive coupled-fluctuation dispersion interactions. The model is given as a simple additive correction to standard density functional theory (DFT) calculations, of form $ΔU(D)=f(D)[U^{vdW}(D)-U^{DFT}(D)]$ where $D$ is the interlayer distance. The functions are parametrised by matching contact properties, and long-range dispersion to known values, and the model is found to accurately match high-level \emph{ab initio} results for graphite across a wide range of $D$ values. We employ the correction on the difficult bigraphene binding and graphite exfoliation problems, as well as lithium intercalated graphite LiC$_6$. We predict the binding energy of bigraphene to be 0.27 J/m^2, and the exfoliation energy of graphite to be 0.31 J/m^2, respectively slightly less and slightly more than the bulk layer binding energy 0.295 J/m^2/layer. Material properties of LiC$_6$ are found to be essentially unchanged compared to the local density approximation. This is appropriate in view of the relative unimportance of dispersion interactions for LiC$_6$ layer binding.

cond-mat.mtrl-sci

Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration.

cond-mat.mes-hall

Correlated Electrons Step-by-Step: Itinerant-to-Localized Transition of Fe Impurities in Free-Electron Metal Hosts

High-resolution photoemission spectroscopy and realistic ab-initio calculations have been employed to analyze the onset and progression of d-sp hybridization in Fe impurities deposited on alkali metal films. The interplay between delocalization, mediated by the free-electron environment, and Coulomb interaction among d-electrons gives rise to complex electronic configurations. The multiplet structure of a single Fe atom evolves and gradually dissolves into a quasiparticle peak near the Fermi level with increasing the host electron density. The effective multi-orbital impurity problem within the exact diagonalization scheme describes the whole range of hybridizations.

cond-mat.str-el

Electron-Hole Symmetry and Magnetic Coupling in Antiferromagnetic LaOFeAs

When either electron or hole doped at concentrations $x\sim 0.1$, the LaOFeAs family displays remarkably high temperature superconductivity with T$_c$ up to 55 K. In the most energetically stable $\vec Q_M = (π,π)$ antiferromagnetic (AFM) phase comprised of tetragonal-symmetry breaking alternating chains of aligned spins, there is a deep pseudogap in the Fe 3d states centered at the Fermi energy, and very strong magnetophonon coupling is uncovered. Doping (of either sign) beyond $x \sim 0.1$ results in Fe 3d heavy mass carriers ($m^*\sim 4-8$) with a large Fermi surface. Calculated Fe-Fe transverse exchange couplings $J_{ij}(R)$ reveal that exchange coupling is strongly dependent on the AFM symmetry and Fe-As distance.

cond-mat.supr-con

Huge excitonic effects in layered hexagonal boron nitride

The calculated quasiparticle band structure of bulk hexagonal boron nitride using the all-electron GW approximation shows that this compound is an indirect-band-gap semiconductor. The solution of the Bethe-Salpeter equation for the electron-hole two-particle Green function has been used to compute its optical spectra and the results are found in excellent agreement with available experimental data. A detailed analysis is made for the excitonic structures within the band gap and found that the excitons belong to the Frenkel class and are tightly confined within the layers. The calculated exciton binding energy is much larger than that obtained by Watanabe {\it et al} using a Wannier model to interpret their experimental results and assuming that h-BN is a direct-band-gap semiconductor.

cond-mat.mtrl-sci

Excitonic and Quasiparticle Life Time Effects on Silicon Electron Energy Loss Spectrum from First Principles

The quasiparticle decays due to electron-electron interaction in silicon are studied by means of first-principles all-electron GW approximation. The spectral function as well as the dominant relaxation mechanisms giving rise to the finite life time of quasiparticles are analyzed. It is then shown that these life times and quasiparticle energies can be used to compute the complex dielectric function including many-body effects without resorting to empirical broadening to mimic the decay of excited states. This method is applied for the computation of the electron energy loss spectrum of silicon. The location and line shape of the plasmon peak are discussed in detail.

cond-mat.mtrl-sci

Pressure-Induced Simultaneous Metal-Insulator and Structural-Phase Transitions in LiH: a Quasiparticle Study

A pressure-induced simultaneous metal-insulator transition (MIT) and structural-phase transformation in lithium hydride with about 1% volume collapse has been predicted by means of the local density approximation (LDA) in conjunction with an all-electron GW approximation method. The LDA wrongly predicts that the MIT occurs before the structural phase transition. As a byproduct, it is shown that only the use of the generalized-gradient approximation together with the zero-point vibration produces an equilibrium lattice parameter, bulk modulus, and an equation of state that are in excellent agreement with experimental results.

cond-mat.mtrl-sci

Implementation of an all-electron GW approximation based on the PAW method without plasmon pole approximation: application to Si, SiC, AlAs, InAs, NaH and KH

A new implementation of the GW approximation (GWA) based on the all-electron Projector-Augmented-Wave method (PAW) is presented, where the screened Coulomb interaction is computed within the Random Phase Approximation (RPA) instead of the plasmon-pole model. Two different ways of computing the self-energy are reported. The method is used successfully to determine the quasiparticle energies of six semiconducting or insulating materials: Si, SiC, AlAs, InAs, NaH and KH. To illustrate the novelty of the method the real and imaginary part of the frequency-dependent self-energy together with the spectral function of silicon are computed. Finally, the GWA results are compared with other calculations, highlighting that all-electron GWA results can differ markedly from those based on pseudopotential approaches.

cond-mat.mtrl-sci