arXiv subjects

S. Ludwig

Publications and source records attributed to S. Ludwig.

At least 37 records · Page 2Linked to original sources

arXiv2010

Phonon-mediated vs. Coulombic Back-Action in Quantum Dot circuits

Quantum point contacts (QPCs) are commonly employed to capacitively detect the charge state of coupled quantum dots (QD). An indirect back-action of a biased QPC onto a double QD laterally defined in a GaAs/AlGaAs heterostructure is observed. Energy is emitted by non-equilibrium charge carriers in the leads of the biased QPC. Part of this energy is absorbed by the double QD where it causes charge fluctuations that can be observed under certain conditions in its stability diagram. By investigating the spectrum of the absorbed energy, we identify both acoustic phonons and Coulomb interaction being involved in the back-action, depending on the geometry and coupling constants.

cond-mat.mes-hall↗

arXiv2009

Asymmetric non-linear response of the IQHE

An asymmetric break-down of the integer quantized Hall effect is investigated. This rectification effect is observed as a function of the current value and its direction in conjunction with an asymmetric lateral confinement potential defining the Hall-bar. Our electrostatic definition of the Hall-bar via Schottky-gates allows a systematic control of the steepness of the confinement potential at the edges of the Hall-bar. A softer edge (flatter confinement potential) results in more stable Hall-plateaus, i.e. a break-down at a larger current density. For one soft and one hard edge the break-down current depends on the current direction, resembling rectification. This non-linear magneto-transport effect confirms the predictions of an emerging screening theory of the IQHE.

cond-mat.mes-hall↗

arXiv2009

Magneto-electrical subbands of freely suspended quantum point contacts

We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/GaAs heterostructures by electron-beam lithography and etching techniques. Narrow constrictions define quantum point contacts that are capacitively controlled via local in-plane side gates. Employing transport spectroscopy, we investigate the transition from electrostatic subbands to Landau-quantization in a perpendicular magnetic field. The large subband quantization energies allow us to utilize a wide magnetic field range and thereby observe a large exchange splitted spin-gap of the two lowest Landau-levels.

cond-mat.mes-hall↗

arXiv2009

Interaction mediated asymmetries of the quantized Hall effect

Experimental and theoretical investigations on the integer quantized Hall effect in gate defined narrow Hall bars are presented. At low electron mobility the classical (high temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high mobility samples the intersection point, at even filling factors ν= 2; 4 ..., is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i. e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at ν= 1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.

cond-mat.mes-hall↗

arXiv2009

Phonon-mediated non-equilibrium interaction between nanoscale devices

Interactions between mesoscopic devices induced by interface acoustic phonons propagating in the plane of a two-dimensional electron system (2DES) are investigated by phonon-spectroscopy. In our experiments ballistic electrons injected from a biased quantum point contact emit phonons and a portion of them are reabsorbed exciting electrons in a nearby degenerate 2DES. We perform energy spectroscopy on these excited electrons employing a tunable electrostatic barrier in an electrically separate and unbiased detector circuit. The transferred energy is found to be bounded by a maximum value corresponding to Fermi-level electrons excited and back-scattered by absorbing interface phonons. Our results imply that phonon-mediated interaction plays an important role for the decoherence of solid-state-based quantum circuits.

cond-mat.mes-hall↗

arXiv2009

A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.

cond-mat.mes-hall↗

arXiv2008

Nonequilibrium interactions between two quantum circuits

We briefly overview our recent results on nonequilibrium interactions between neighboring electrically isolated nanostructures. One of the nanostructures is represented by an externally biased quantum point contact (drive-QPC), which is used to supply energy quanta to the second nanostructure (detector). Absorption of these nonequilibrium quanta of energy generates a dc-current in the detector, or changes its differential conductance. We present results for a double quantum dot, a single quantum dot or a second QPC placed in the detector circuit. In all three cases a detection of quanta with energies up to ~1 meV is possible for bias voltages across the drive-QPC in the mV range. The results are qualitatively consistent with an energy transfer mechanism based on nonequilibrium acoustic phonons.

cond-mat.mes-hall↗

arXiv2008

Optically induced transport properties of freely suspended semiconductor submicron channels

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

cond-mat.mes-hall↗

arXiv2008

Nonequilibrium phenomena in adjacent electrically isolated nanostructures

We report on nonequilibrium interaction phenomena between adjacent but electrostatically separated nanostructures in GaAs. A current flowing in one externally biased nanostructure causes an excitation of electrons in a circuit of a second nanostructure. As a result we observe a dc current generated in the unbiased second nanostructure. The results can be qualitatively explained in terms of acoustic phonon based energy transfer between the two mutually isolated circuits.

cond-mat.mes-hall↗

arXiv2008

Telegraph Noise in Coupled Quantum Dot Circuits Induced by a Quantum Point Contact

Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back action role of charge sensing on the confined electrons. The quantum point contact triggers inelastic transitions, which occur quite generally. Under specific device and measurement conditions these transitions manifest themselves as bounded regimes of telegraph noise within a stability diagram. A nonequilibrium transition from artificial atomic to molecular behavior is identified. Consequences for quantum information applications are discussed.

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arXiv2007

Investigations on unconventional aspects in the quantum Hall regime of narrow gate defined channels

We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates on the surfaces of GaAs/AlGaAs heterostructures. In the low mobility regime the classical Hall resistance line is proportional to the magnetic field as measured in the high temperature limit and cuts through the center of each Hall plateau. For high mobility samples we observe in linear response measurements, that this symmetry is broken and the classical Hall line cuts the plateaus not at the center but at higher magnetic fields near the edges of the plateaus. These experimental results confirm the unconventional predictions of a model for the quantum Hall effect taking into account mutual screening of charge carriers within the Hall bar. The theory is based on solving the Poisson and Schrödinger equations in a self-consistent manner.

cond-mat.mes-hall↗

arXiv2007

Counterflow of electrons in two isolated quantum point contacts

We study the interaction between two adjacent but electrically isolated quantum point contacts (QPCs). At high enough source-drain bias on one QPC, the drive QPC, we detect a finite electric current in the second, unbiased, detector QPC. The current generated at the detector QPC always flows in the opposite direction than the current of the drive QPC. The generated current is maximal, if the detector QPC is tuned to a transition region between its quantized conductance plateaus and the drive QPC is almost pinched-off. We interpret this counterflow phenomenon in terms of an asymmetric phonon-induced excitation of electrons in the leads of the detector QPC.

cond-mat.mes-hall↗

arXiv2007

An electrostatically defined serial triple quantum dot charged with few electrons

A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of few electrons charging the TQD. An electrostatic model is developed to determine the ground state charge configurations of the TQD. Numerical calculations are compared with experimental results. In addition, the tunneling conductance through all three quantum dots in series is studied. Quantum cellular automata processes are identified, which are where charge reconfiguration between two dots occurs in response to the addition of an electron in the third dot.

cond-mat.mes-hall↗

arXiv2007

A widely tunable few electron droplet

Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide range of coupling strengths to the leads. The weak coupling regime is described by discrete quantum states. At strong interaction with the leads Kondo phenomena are observed as a function of a magnetic field. By varying gate voltages the electron droplet can, in addition, be distorted into a double quantum dot with a strong interdot tunnel coupling while keeping track of the number of trapped electrons.

cond-mat.mes-hall↗

arXiv2006

Kondo effect in a one-electron double quantum dot: Oscillations of the Kondo current in a weak magnetic field

We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a function of a small perpendicular magnetic field |B| \lesssim 50mT. We discuss possible explanations of this effect and interpret it by means of a fine tuning of the energy mismatch of the single dot levels of the two quantum dots. The observed degree of control implies important consequences for applications in quantum information processing.

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arXiv2006

A double-dot quantum ratchet driven by an independently biased quantum point contact

We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunnelling we observe a finite current flowing through the unbiased Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of the two quantum dots. The results are interpreted in terms of a quantum ratchet phenomenon in a DQD energized by a nearby QPC.

cond-mat.mes-hall↗

arXiv2005

Molecular states in a one-electron double quantum dot

The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric ground state and the antisymmetric excited state of the double well potential by means of differential conductance measurements. A sizable magnetic field, perpendicular to the two-dimensional electron gas, reduces the extent of the electronic wave-function and thereby decreases the tunnel coupling. A perpendicular magnetic field also modulates the orbital excitation energies in each individual dot. By additionally tuning the asymmetry of the double well potential we can align the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot. This results in a second anticrossing with a much larger tunnel splitting than the anticrossing involving the two electronic ground states.

cond-mat.mes-hall↗

arXiv2005

Direct control of the tunnel splitting in a one-electron double quantum dot

Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the low-energy spectrum of the double quantum dot is characterized by its quantum mechanical interdot tunnel splitting. We directly measure its magnitude by utilizing particular anticrossing features in the stability diagram at finite source-drain bias. By modification of gate voltages defining the confinement potential as well as by variation of a perpendicular magnetic field we demonstrate the tunability of the coherent tunnel coupling.

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