arXiv subjects

S. M. Thomas

Publications and source records attributed to S. M. Thomas.

At least 55 records · Page 3Linked to original sources

arXiv2022

Persistence of correlation-driven surface states in SmB6 under pressure

The proposed topological Kondo insulator SmB$_{6}$ hosts a bulk Kondo hybridization gap that stems from strong electronic correlations and a metallic surface state whose effective mass remains disputed. Thermopower and scanning tunneling spectroscopy measurements argue for heavy surface states that also stem from strong correlations, whereas quantum oscillation and angle-resolved photoemission measurements reveal light effective masses that would be consistent with a Kondo breakdown scenario at the surface. Here we investigate the evolution of the surface state via electrical and thermoelectric transport measurements under hydrostatic pressure, a clean symmetry-preserving tuning parameter that suppresses the Kondo gap and increases the valence of Sm from 2.6+ towards a 3+ magnetic metallic state. Electrical resistivity measurements reveal that the surface carrier density increases with increasing pressure, whereas thermopower measurements show an unchanged Fermi energy under pressure. As a result, the effective mass of the surface state charge carriers linearly increases with pressure as the Sm valence approaches 3+. Our results are consistent with the presence of correlation-driven surface states in SmB$_{6}$ and suggest that the surface Kondo effect persists under pressure to 2 GPa.

cond-mat.str-el↗

arXiv2022

Nanometric modulations of the magnetic structure of the element Nd

The rare earth neodymium arguably exhibits the most complex magnetic ordering and series of magnetic phase transitions of the elements. Here we report the results of small-angle neutron scattering (SANS) measurements as a function of temperature and applied magnetic field to study magnetic correlations on nanometer length scales in Nd. The SANS measurements reveal the presence of previously unreported modulation vectors characterizing the ordered spin configuration which exhibit changes in magnitude and direction that are phase dependent. Between 5.9 and 7.6 K the additional modulation vector has a magnitude $Q$ =0.12 Å$^{-1}$ and is primarily due to order of the Nd layers which contain a center of inversion. In this region of the phase diagram, the SANS measurements also identify a phase boundary at $\approx$1 T. An important feature of these modulation vectors is that they indicate the presence of nanometer length scale spin textures which are likely stabilized by frustrated Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions rather than a Dzyaloshinskii-Moriya (DM) exchange interaction.

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arXiv2022

Colossal piezoresistance in narrow-gap Eu5In2Sb6

Piezoresistance, the change of a material's electrical resistance ($R$) in response to an applied mechanical stress ($σ$), is the driving principle of electromechanical devices such as strain gauges, accelerometers, and cantilever force sensors. Enhanced piezoresistance has been traditionally observed in two classes of uncorrelated materials: nonmagnetic semiconductors and composite structures. We report the discovery of a remarkably large piezoresistance in Eu$_5$In$_2$Sb$_6$ single crystals, wherein anisotropic metallic clusters naturally form within a semiconducting matrix due to electronic interactions. Eu$_5$In$_2$Sb$_6$ shows a highly anisotropic piezoresistance, and uniaxial pressure along [001] of only 0.4~GPa leads to a resistivity drop of more than 99.95\% that results in a colossal piezoresistance factor of $5000\times10^{-11}$Pa$^{-1}$. Our result not only reveals the role of interactions and phase separation in the realization of colossal piezoresistance, but it also highlights a novel route to multi-functional devices with large responses to both pressure and magnetic field.

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arXiv2022

Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$

Colossal magnetoresistance (CMR) emerges from intertwined spin and charge degrees of freedom in the form of ferromagnetic clusters also known as trapped magnetic polarons. As a result, CMR is rarely observed in antiferromagnetic materials. Here we use electron spin resonance (ESR) to reveal microscopic evidence for the formation of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$. First, we observe a reduction of the Eu$^{2+}$ ESR linewidth as a function of the applied magnetic field consistent with ferromagnetic clusters that are antiferromagnetically coupled. Additionally, the Eu$^{2+}$ lineshape changes markedly below T' ~ 200 K, a temperature scale that coincides with the onset of CMR. The combination of these two effects provide strong evidence that magnetic polarons grow in size below T' and start influencing the macroscopic properties of the system.

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arXiv2021

Ground state of Ce$_{3}$Bi$_{4}$Pd$_{3}$ unraveled by hydrostatic pressure

Noncentrosymmetric Ce$_{3}$Bi$_{4}$Pd$_{3}$ has attracted a lot of attention as a candidate for strongly correlated topological material, yet its experimental ground state remains a matter of contention. Two conflicting scenarios have emerged from a comparison to prototypical Kondo insulator Ce$_{3}$Bi$_{4}$Pt$_{3}$: either Ce$_{3}$Bi$_{4}$Pd$_{3}$ is a spin-orbit-driven topological semimetal or a Kondo insulator with smaller Kondo coupling than its Pt counterpart. Here we determine the ground state of Ce$_{3}$Bi$_{4}$Pd$_{3}$ via electrical resistivity measurements under hydrostatic pressure, which is a clean symmetry-preserving tuning parameter that increases hybridization but virtually preserves spin-orbit coupling. Ce$_{3}$Bi$_{4}$Pd$_{3}$ becomes more insulating under pressure, which is a signature of Ce-based Kondo insulating materials. Its small zero-pressure gap increases quadratically with pressure, similar to the behavior observed in the series Ce$_{3}$Bi$_{4}$(Pt$_{1-x}$Pd$_{x}$)$_{3}$, which indicates that Pt substitution and applied pressure have a similar effect. Our result not only demonstrates that Kondo coupling, rather than spin-orbit coupling, is the main tuning parameter in this class of materials, but it also establishes that Ce$_{3}$Bi$_{4}$Pd$_{3}$ has a narrow-gap Kondo insulating ground state.

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arXiv2021

Single-component superconducting state in UTe2 at 2 K

UTe2 is a newly-discovered unconventional superconductor wherein multicomponent topological superconductivity is anticipated based on the presence of two superconducting transitions and time-reversal symmetry breaking in the superconducting state. The observation of two superconducting transitions, however, remains controversial. Here we demonstrate that UTe2 single crystals displaying an optimal superconducting transition temperature at 2 K exhibit a single transition and remarkably high quality supported by their small residual heat capacity in the superconducting state and large residual resistance ratio. Our results shed light on the intrinsic superconducting properties of UTe2 and bring into question whether UTe2 is a multicomponent superconductor at ambient pressure.

cond-mat.supr-con↗

arXiv2021

Spatially inhomogeneous superconductivity in UTe2

Newly-discovered superconductor UTe$_2$ is a strong contender for a topological spin-triplet state wherein a multi-component order parameter arises from two nearly-degenerate superconducting states. A key issue is whether both of these states intrinsically exist at ambient pressure. Through thermal expansion and calorimetry, we show that UTe$_2$ at ambient conditions exhibits two detectable transitions only in some samples, and the size of the thermal expansion jump at each transition varies when the measurement is performed in different regions of the sample. This result indicates that the two transitions arise from two spatially separated regions that are inhomogeneously mixed throughout the volume of the sample, each with a discrete superconducting transition temperature (T$_c$). Notably, samples with higher T$_c$ only show a single transition at ambient pressure. Above 0.3 GPa, however, two transitions are invariably observed in ac calorimetry. Our results not only point to a nearly vertical line in the pressure-temperature phase diagram but also provide a unified scenario for the sample dependence of UTe$_{2}$.

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arXiv2021

Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$

Here we investigate the thermodynamic and electronic properties of Eu$_{11}$InSb$_9$ single crystals. Electrical transport data show that Eu$_{11}$InSb$_9$ has a semiconducting ground state with a relatively narrow band gap of $320$~meV. Magnetic susceptibility data reveal antiferromagnetic order at low temperatures, whereas ferromagnetic interactions dominate at high temperature. Specific heat, magnetic susceptibility, and electrical resistivity measurements reveal three phase transitions at $T_{N1}=9.3$~K, $T_{N2} =8.3$~K, and $T_{N3} =4.3$~K. Unlike Eu$_{5}$In$_{2}$Sb$_6$, a related europium-containing Zintl compound, no colossal magnetoresistance (CMR) is observed in Eu$_{11}$InSb$_9$. We attribute the absence of CMR to the smaller carrier density and the larger distance between Eu ions and In-Sb polyhedra in Eu$_{11}$InSb$_9$. Our results indicate that Eu$_{11}$InSb$_9$ has potential applications as a thermoelectric material through doping or as a long-wavelength detector due to its narrow gap.

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arXiv2021

Fingerprinting Triangular-Lattice Antiferromagnet by Excitation Gaps

CeCd$_3$As$_3$ is a rare-earth triangular-lattice antiferromagnet with large inter-layer separation. Our field-dependent heat capacity measurements at dilution fridge temperatures allow us to trace the field-evolution of the spin-excitation gaps throughout the antiferromagnetic and paramagnetic regions. The distinct gap evolution places strong constraints on the microscopic pseudo-spin model, which, in return, yields a close {\it quantitative} description of the gap behavior. This analysis provides crucial insights into the nature of the magnetic state of CeCd$_3$As$_3$, with a certainty regarding its stripe order and low-energy model parameters that sets a compelling paradigm for exploring and understanding the rapidly growing family of the rare-earth-based triangular-lattice systems.

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arXiv2021

Colossal anomalous Nernst effect in a correlated noncentrosymmetric kagome ferromagnet

Analogous to the Hall effect, the Nernst effect is the generation of a transverse voltage due to a temperature gradient in the presence of a perpendicular magnetic field. The Nernst effect has promise for thermoelectric applications and as a probe of electronic structure. In magnetic materials, a so-called anomalous Nernst effect (ANE) is possible in zero magnetic field. Here we report a colossal ANE reaching 23 $μ$V/K in the ferromagnetic metal UCo$_{0.8}$Ru$_{0.2}$Al. Uranium's $5f$ electrons provide strong electronic correlations that lead to narrow bands, which are a known route to producing a large thermoelectric response. Additionally, the large nuclear charge of uranium generates strong spin-orbit coupling, which produces an intrinsic transverse response in this material due to the Berry curvature associated with the relativistic electronic structure. Theoretical calculations show that at least 148 Weyl nodes and two nodal lines exist within $\pm$ 60 meV of the Fermi level in UCo$_{0.8}$Ru$_{0.2}$Al. This work demonstrates that magnetic actinide materials can host strong Nernst and Hall responses due to their combined correlated and topological nature.

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arXiv2021

Electron-beam Floating-zone Refined UCoGe

The interplay between unconventional superconductivity and quantum critical ferromagnetism in the U-Ge compounds represents an open problem in strongly correlated electron systems. Sample quality can have a strong influence on both of these ordered states in the compound UCoGe, as is true for most unconventional superconductors. We report results of a new approach at UCoGe crystal growth using a floating-zone method with potential for improvements of sample quality and size as compared with traditional means such as Czochralski growth. Single crystals of the ferromagnetic superconductor UCoGe were produced using an ultra-high vacuum electron-beam floating-zone refining technique. Annealed single crystals show well-defined signatures of bulk ferromagnetism and superconductivity at $T_c \sim$2.6 K and $T_s \sim$0.55 K, respectively, in the resistivity and heat capacity. Scanning electron microscopy of samples with different surface treatments shows evidence of an off-stoichiometric uranium rich phase of UCoGe collected in cracks and voids that might be limiting sample quality.

cond-mat.supr-con↗

arXiv2020

Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$

We report the electronic and magnetic properties of stoichiometric CeAuBi$_{2}$ single crystals. At ambient pressure, CeAuBi$_{2}$ orders antiferromagnetically below a Néel temperature ($T_{N}$) of 19 K. Neutron diffraction experiments revealed an antiferromagnetic propagation vector $\hatτ = [0, 0, 1/2]$, which doubles the paramagnetic unit cell along the $c$-axis. At low temperatures several metamagnetic transitions are induced by the application of fields parallel to the $c$-axis, suggesting that the magnetic structure of CeAuBi$_{2}$ changes as a function of field. At low temperatures, a linear positive magnetoresistance may indicate the presence of band crossings near the Fermi level. Finally, the application of external pressure favors the antiferromagnetic state, indicating that the 4$f$ electrons become more localized.

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arXiv2020

Anomalous Hall Effect in Kagome Ferrimagnet GdMn$_6$Sn$_6$

We present magnetotransport data on the ferrimagnet GdMn$_6$Sn$_6$. From the temperature dependent data we are able to extract a large instrinsic contribution to the anomalous Hall effect $σ_{xz}^{int} \sim$ 32 $Ω^{-1}cm^{-1}$ and $σ_{xy}^{int} \sim$ 223 $Ω^{-1}cm^{-1}$, which is comparable to values found in other systems also containing kagome nets of transition metals. From our transport anisotropy, as well as our density functional theory calculations, we argue that the system is electronically best described as a three dimensional system. Thus, we show that reduced dimensionality is not a strong requirement for obtaining large Berry phase contributions to transport properties. In addition, the coexistence of rare-earth and transition metal magnetism makes the hexagonal MgFe$_6$Ge$_6$ structure type a promising system to tune the electronic and magnetic properties in future studies.

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arXiv2020

Large Tunable Anomalous Hall Effect in the Kagom$\acute{e}$ Antiferromagnet U$_3$Ru$_4$Al$_{12}$

The Berry curvature in magnetic systems is attracting interest due to the potential tunability of topological features via the magnetic structure. $f$-electrons, with their large spin-orbit coupling, abundance of non-collinear magnetic structures and high electronic tunability, are attractive candidates to search for tunable topological properties. In this study, we measure anomalous Hall effect (AHE) in the distorted kagom$\acute{e}$ heavy fermion antiferromagnet U$_3$Ru$_4$Al$_{12}$. A large intrinsic AHE in high fields reveals the presence of a large Berry curvature. Moreover, the fields required to obtain the large Berry curvature are significantly different between $B \parallel a$ and $B \parallel a^*$, providing a mechanism to control the topological response in this system. Theoretical calculations illustrate that this sensitivity may be due to the heavy fermion character of the electronic structure. These results shed light on the Berry curvature of a strongly correlated band structure in magnetically frustrated heavy fermion materials, but also emphasize 5$f$-electrons as an ideal playground for studying field-tuned topological states.

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arXiv2020

Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator

Here we investigate antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$, a nonsymmorphic Zintl phase. Our electrical transport data show that Eu$_{5}$In$_{2}$Sb$_{6}$ is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From {\it ab initio} calculations, the paramagnetic state of Eu$_{5}$In$_{2}$Sb$_{6}$ is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke-Johnson potential. Notably, GGA+U calculations suggest that the antiferromagnetic phase of Eu$_{5}$In$_{2}$Sb$_{6}$ may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.

cond-mat.str-el↗

arXiv2020

Evidence for a pressure-induced antiferromagnetic quantum critical point in intermediate valence UTe2

UTe$_2$ is a recently discovered unconventional superconductor that has attracted much interest due to its many intriguing properties - a large residual density-of-states in the superconducting state, re-entrant superconductivity in high magnetic fields, and potentially spin-triplet topological superconductivity. Our ac calorimetry, electrical resistivity, and x-ray absorption study of UTe$_2$ under applied pressure reveals key new insights on the superconducting and magnetic states surrounding pressure-induced quantum criticality at P$_{c1}$ = 1.3 GPa. First, our specific heat data at low pressures, combined with a phenomenological model, show that pressure alters the balance between two closely competing superconducting orders. Second, near 1.5 GPa we detect two bulk transitions that trigger changes in the resistivity which are consistent with antiferromagnetic order, rather than ferromagnetism. The presence of both bulk magnetism and superconductivity at pressures above P$_{c2}$ = 1.4 GPa results in a significant temperature difference between resistively and thermodynamically determined transitions into the superconducting state, which indicates a suppression of the superconducting volume fraction by magnetic order. Third, the emergence of magnetism is accompanied by an increase in valence towards a U$^{4+}$ (5f2) state, which indicates that UTe$_2$ exhibits intermediate valence at ambient pressure. Our results suggest that antiferromagnetic fluctuations may play a more significant role on the superconducting state of UTe$_2$ than previously thought.

cond-mat.str-el↗

arXiv2019

Nematic state in CeAuSb$_{2}$

At ambient pressure and zero field, tetragonal CeAuSb$_{2}$ hosts stripe antiferromagnetic order at $T_{N} = 6.3$ K. Here we first show via bulk thermodynamic probes and x-ray diffraction measurements that this magnetic order is connected with a structural phase transition to a superstructure which likely breaks $C_{4}$ symmetry, thus signaling nematic order. The temperature-field-pressure phase diagram of CeAuSb$_{2}$ subsequently reveals the emergence of additional ordered states under applied pressure at a multicritical point. Our phenomenological model supports the presence of a vestigial nematic phase in CeAuSb$_{2}$ akin to iron-based high-temperature superconductors; however, superconductivity, if present, remains to be discovered.

cond-mat.str-el↗

arXiv2019

Putative hybridization gap in CaMn$_{2}$Bi$_{2}$ under applied pressure

We report electrical transport measurements on CaMn$_{2}$Bi$_{2}$ single crystals under applied pressure. At ambient pressure and high temperatures, CaMn$_{2}$Bi$_{2}$ behaves as a single-band semimetal hosting Néel order at $T_{N}=150$~K. At low temperatures, multi-band behavior emerges along with an activated behavior typical of degenerate semiconductors. The activation gap is estimated to be $Δ\sim 20$~K. Applied pressure not only favors the antiferromagnetic order at a rate of 0.40(2)~K/kbar, but also enhances the activation gap at $20$~kbar by about $70$~\%. This gap enhancement is typical of correlated narrow-gap semiconductors such as FeSi and Ce$_{3}$Bi$_{4}$Pt$_{3}$, and places CaMn$_{2}$Bi$_{2}$ as a Mn-based hybridization-gap semiconductor candidate. \textit{Ab initio} calculations based on the density functional theory are shown to be insufficient to describe the ground state of CaMn$_{2}$Bi$_{2}$.

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