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S. Mahakal

Publications and source records attributed to S. Mahakal.

3 recordsLinked to original sources

Effect of Indium doping on structural and thermoelec-tric properties of SnTe

The solid state reaction method is employed to synthesize Sn1-xInxTe samples. Power Factors of synthesized samples are estimated from resistivity and thermopower data. Modifications in structural parameters, resistivity and thermopower owing to In doping in SnTe thermoelectric material are reported. In-depth structural analysis, employing Rietveld refinement of X-ray diffraction data, confirms the substitution of Sn by In. A minute amount of embedded phases in synthesized samples is revealed from the refinement of X-ray diffraction data. Williamson-Hall and modified Williamson-Hall methods are employed to estimate dislocation density and strain. The highest power factor and maximum host phases are simultaneously achieved for the Sn0.96In0.04Te sample amid the synthesized Sn1-xInxTe samples.

cond-mat.mtrl-sci

Transport phenomena of TiCoSb: Defects induced modification in structure and density of states

TiCoSb1+x (x=0.0, 0.01, 0.02, 0.03, 0.04, 0.06) samples have been synthesized, employing solid state reaction method followed by arc menting. Theoretical calculations, using Density Functional Theory (DFT) have been performed to estimate band structure and density of states (DOS). Further, energitic calculations, using first principle have been carried out to reveal the formation energy for vacancy, interstitial, anti-site defects. Detail structural calculation, employing Rietveld refinement reveals the presence of embedded phases, vacancy and interstitial atom, which is also supported by the theoretical calculations. Lattice strain, crystalline size and dislocation density have been estimated by Williamson-Hall and modified Williamson-Hall methods. Thermal variation of resistivity [\r{ho}(T)] and thermopower [S(T)] have been explained using Mott equation and density of states (DOS) modification near the Fermi surface due to Co vancancy and embedded phases. Figure of merit (ZT) has been calculated and 4 to 5 times higher ZT for TiCoSb than earlier reported value is obtained at room temperature.

cond-mat.mtrl-sci

Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal

(Bi1-xSbx)2Te3 (x=0.60, 0.65, 0.68, 0.70, 0.75 and 0.80) mixed crystals have been synthesized by solid state reaction. In depth structural, thermal, transport and electronic properties are reported. Defect and disorder play a crucial role in structural and transport behaviour. Disorder induced iso-structural phase transition is observed at x=0.70, which is supported by the structural and transport properties data. Debye temperature has been estimated from the powder diffraction data. Differential scanning calorimetry (DSC) data confirms the glass transition in the material. Low temperature resistivity data shows Variable range hopping mechanism whereas high temperature data follows activated behaviour. Activation energy is calculated from the semiconducting region of resistivity data. Both Hall measurement and temperature dependent thermopower data (S(T)) confirms that samples are p-type in nature. Density of state effective mass has been estimated from Pisarenko relation and corroborated with resistivity data. Thermal conductivity (k) is estimated using experimentally obtained data. Figure of Merit (ZT) of the synthesized samples are calculated using resistivity, S(T) and k. Structural and transport properties are correlated, confirms the transition from disorder to order state. Defect and disorder are corroborated with structural and Thermoelectric properties of the synthesized samples.

physics.app-ph