Searcharxiv⌕ Search

arXiv subjects

S. McVitie

Publications and source records attributed to S. McVitie.

21 records · Page 2Linked to original sources

Academic performance & student engagement in level 1 physics undergraduates

At the beginning of academic year 2007-08, staff in the Department of Physics & Astronomy at the University of Glasgow started to implement a number of substantial changes to the administration of the level 1 physics undergraduate class. The main aims were to improve the academic performance and progression statistics. With this in mind, a comprehensive system of learning support was introduced, the main remit being the provision of an improved personal contact and academic monitoring and support strategy for all students at level 1. The effects of low engagement with compulsory continuous assessment components had already been observed to have a significant effect for students sitting in the middle of the grade curve. Analysis of data from the 2007-08 class showed that even some nominally high-achieving students achieved lowered grades due to the effects of low engagement. Nonetheless, academic and other support measures put in place during 2007-08 played a part in raising the passrate for the level 1 physics class by approximately 8% as well as raising the progression rate by approximately 10%.

physics.ed-ph↗

Direct observation of domain wall structures in curved permalloy wires containing an anti-notch

The formation and field response of head-to-head domain walls in curved permalloy wires, fabricated to contain a single anti-notch, have been investigated using Lorentz microscopy. High spatial resolution maps of the vector induction distribution in domain walls close to the anti-notch have been derived and compared with micromagnetic simulations. In wires of 10 nm thickness the walls are typically of a modified asymmetric transverse wall type. Their response to applied fields tangential to the wire at the anti-notch location was studied. The way the wall structure changes depends on whether the field moves the wall away from or further into the notch. Higher fields are needed and much more distorted wall structures are observed in the latter case, indicating that the anti-notch acts as an energy barrier for the domain wall.

cond-mat.mtrl-sci↗

On the scaling behaviour of cross-tie domain wall structures in patterned NiFe elements

The cross-tie domain wall structure in micrometre and sub-micrometre wide patterned elements of NiFe, and a thickness range of 30 to 70nm, has been studied by Lorentz microscopy. Whilst the basic geometry of the cross-tie repeat units remains unchanged, their density increases when the cross-tie length is constrained to be smaller than the value associated with a continuous film. This occurs when element widths are sufficiently narrow or when the wall is forced to move close to an edge under the action of an applied field. To a very good approximation the cross-tie density scales with the inverse of the distance between the main wall and the element edge. The experiments show that in confined structures, the wall constantly modifies its form and that the need to generate, and subsequently annihilate, extra vortex/anti-vortex pairs constitutes an additional source of hysteresis.

cond-mat.mtrl-sci↗