arXiv subjects

S. Memaran

Publications and source records attributed to S. Memaran.

4 recordsLinked to original sources

arXiv2020

Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter \alpha is thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, \alpha could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

cond-mat.mes-hall↗

arXiv2017

Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs

We evaluate the topological character of TaAs through a detailed study of the angular, magnetic-field and temperature dependence of its magnetoresistivity and Hall-effect(s), and of its bulk electronic structure through quantum oscillatory phenomena. At low temperatures, and for fields perpendicular to the electrical current, we extract an extremely large Hall angle $\Theta_H$ at higher fields, that is $\Theta_H \sim 82.5^{\circ}$, implying a very pronounced Hall signal superimposed into its magnetoresistivity. For magnetic fields and electrical currents perpendicular to the \emph{c}-axis we observe a very pronounced planar Hall-effect, when the magnetic field is rotated within the basal plane. This effect is observed even at higher temperatures, i.e. as high as $T = 100$ K, and predicted recently to result from the chiral anomaly among Weyl points. Superimposed onto this planar Hall, which is an even function of the field, we observe an anomalous planar Hall-signal akin to the one reported for that is an odd function of the field. Below 100 K, negative longitudinal magnetoresistivity (LMR), initially ascribed to the chiral anomaly and subsequently to current inhomogeneities, is observed in samples having different geometries and contact configurations, once the large Hall signal is subtracted. Our measurements reveal a phase transition upon approaching the quantum limit that leads to the reconstruction of the FS and to the concomitant suppression of the negative LMR indicating that it is intrinsically associated with the Weyl dispersion at the Fermi level. For fields along the \emph{a}-axis it also leads to a pronounced hysteresis pointing to a field-induced electronic phase-transition. This collection of unconventional tranport observations points to the prominent role played by the axial anomaly among Weyl nodes.

cond-mat.mes-hall↗

arXiv2016

Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P

Results are reported for single crystal specimens of Hf$_2$Te$_2$P and compared to its structural analogue Zr$_2$Te$_2$P, which was recently proposed to be a potential reservoir for Dirac physics.[1] Both materials are produced using the iodine vapor transport method and the resulting crystals are exfoliable. The bulk electrical transport and thermodynamic properties indicate Fermi liquid behavior at low temperature for both compounds. Quantum oscillations are observed in magnetization measurements for fields applied parallel but not perpendicular to the $c$-axis, suggesting that the Fermi surfaces are quasi-two dimensional. Frequencies are determined from quantum oscillations for several parts of the Fermi surfaces. Lifshitz-Kosevich fits to the temperature dependent amplitudes of the oscillations reveal small effective masses, with a particularly small value $m^*$ $=$ 0.046$m_0$ for the {\alpha} branch of Zr$_2$Te$_2$P. Electronic structure calculations are in good agreement with quantum oscillation results and illustrate the effect of a stronger spin-orbit interaction going from Zr to Hf. These results suggest that by using appropriate tuning parameters this class of materials may deepen the pool of novel Dirac phenomena.

cond-mat.mtrl-sci↗

arXiv2015

Hall and field-effect mobilities in few layered $p$-WSe$_2$ field-effect transistors

Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics.

cond-mat.mes-hall↗