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S. N. Coppersmith

Publications and source records attributed to S. N. Coppersmith.

At least 19 recordsLinked to original sources

Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex

The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized samplings of valley energy distributions tend to dramatically overestimate the average valley coupling. But we find that knowledge of the valley phase, in addition to the valley splitting, can significantly improve our estimates. Motivated by this understanding, we propose a novel method to probe the valley phase landscape across the quantum well using simple $g$-factor measurements. An important calibration step in this procedure is to measure $g$ in a loop enclosing a valley vortex, where the valley phase winds by $\pm 2π$ around a zero of the valley splitting. This proposal establishes an important new tool for probing spin qubits, and it can be implemented in current experiments.

cond-mat.mes-hall

Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination

Semiconductor quantum dot qubits often require very different voltages on each gate to bring them to a correct operating point. Here, we present a method by which one can controllably and repeatably alter the nanoscale trapped charge distribution at an oxide-semiconductor interface. We demonstrate this method on a Si/SiGe quantum dot device, and we find that the operating voltages can be controlled and made much more uniform. The method relies on illumination with near-infrared light in the presence of applied gate voltages, and it enables the tuning of the device operating point on a gate-by-gate basis. We present an explanation of the underlying physics using self-consistent Schrödinger-Poisson simulations. As an application of this method, we tune a triple quantum dot to have uniform and small operating voltages in the (1,1,1) charge configuration. Importantly, we show that shifting the operating voltages in this way does not change the measured charge noise.

cond-mat.mes-hall

The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe

In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dipole, flopping mode qubits can provide faster gates with smaller field gradients. Moreover, operating in the strong-driving limit can reduce their sensitivity to charge noise. However, alloy disorder in Si/SiGe heterostructures randomizes the valley energy splitting and the valley phase difference between dots, enhancing the probably of valley excitations while tunneling between the dots, and opening a leakage channel. In this work, we analyze the performance of flopping mode spin qubits in the presence of charge noise and alloy disorder, and we optimize these qubits for a variety of valley configurations, in both weak and strong charge-noise regimes. When the charge noise is weak, high fidelity qubits can be implemented across a wide range of valley parameters, provided the electronic pulse is fine-tuned for a given valley configuration. When the charge noise is strong, high-fidelity pulses can still be engineered, provided the valley splittings in each dot are relatively large and the valley phase difference is relatively small. We analyze how charge noise-induced fluctuations of the inter-dot detuning, as well as small shifts in other qubit parameters, impact qubit fidelities. We find that strongly driven pulses are less sensitive to detuning fluctuations but more sensitive to small shifts in the valley parameters, which can actually dominate the qubit infidelities in some regimes. Finally, we discuss schemes to tune devices away from poor-performing configurations, enhancing the scalability of flopping-mode-based qubit architectures.

cond-mat.mes-hall

Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells

Spatial variations of the valley splitting in a quantum well present a key challenge for conveyor-mode shuttling of electron spins in Si/SiGe, giving rise to Landau-Zener-like excitations that cause leakage outside the qubit subspace. Here, we propose an unconventional two-electron qubit encoding, based on valley-singlet states, that is largely immune to Landau-Zener leakage processes. In contrast to single-electron spins, the shuttling fidelity actually improves for small valley splittings, in this case. We show that high fidelities can be achieved without applying any special procedures, such as fine-tuning of the shuttling path.

cond-mat.mes-hall

Single-shot latched readout of a quantum dot qubit using barrier gate pulsing

Latching techniques are widely used to enhance readout of qubits. These methods require precise tuning of multiple tunnel rates, which can be challenging to achieve under realistic experimental conditions, such as when a qubit is coupled to a single reservoir. Here, we present a method for single-shot measurement of a quantum dot qubit with a single reservoir using a latched-readout scheme. Our approach involves pulsing a barrier gate to dynamically control qubit-to-reservoir tunnel rates, a method that is readily applicable to the latched readout of various spin-based qubits. We use this method to enable qubit state latching and to reduce the qubit reset time in measurements of coherent Larmor oscillations of a Si/SiGe quantum dot hybrid qubit.

cond-mat.mes-hall

A scanning probe microscopy approach for identifying defects in aluminum oxide

The coherence of quantum dot qubits fabricated in semiconductors is often limited by charge noise from defects in gate dielectrics, which are material- and process-dependent. Characterizing these defects is an important step towards reducing their impact and improving qubit coherence. The identification of individual defects requires atomic-scale spatial resolution, however, and sufficient spectral sensitivity to determine their electronic structure. Electrostatic force microscopy (EFM) provides highly resolved maps of the surface potential of dielectrics, and importantly, is also sensitive to single-electron charging processes that reflect the spectral structure of underlying defects. In this work, we use cryogenic EFM to characterize aluminum oxide grown by atomic layer deposition (ALD) on bulk silicon. These measurements reveal defects close to the surface that exchange electrons with the EFM tip as they transition through different charge states. Detailed electrostatic modeling opens the door to powerful techniques for mapping tip-backgate charging voltages onto defect transition energies, allowing defects such as aluminum vacancies, and carbon, oxygen, or hydrogen impurities to be identified, by comparing to density functional theory (DFT). These results point towards EFM as a powerful tool for exploring defect structures in solid-state qubits.

cond-mat.mes-hall

Excitation of quasiparticle pairs in superconducting nanodevices by 1/f noise

Superconducting nanodevices such as qubits, resonators, and photodetectors, have revolutionized our capabilities for probing and controlling quantum phenomena. Nonequilibrium quasiparticles, which are broken Cooper pairs that cause decoherence and energy loss, can limit their performance. The number of these quasiparticles is often tens of orders of magnitude greater than would be present in thermal equilibrium. Background radiation has been shown to excite quasiparticles, but quasiparticles are observed even when the devices are carefully shielded. Here we show that the high-frequency components of 1/f noise can excite quasiparticle pairs and that this mechanism is consistent with previously unexplained experimental results. We also propose new experiments that exploit this quasiparticle excitation mechanism to non-invasively characterize high-frequency charge noise as well as the locations and nature of the defects producing the noise. The proposed experiments would also investigate how this noise changes as the defects that give rise to it evolve towards thermal equilibrium.

cond-mat.mes-hall

Leakage at zero temperature from changes in chemical potential in Majorana qubits

Building a fault-tolerant quantum computer requires physical qubits with exceptionally low error rates. Majorana-based tetron qubits are predicted to exhibit error rates that decrease exponentially with inverse temperature and length of each topological superconducting wire in the tetron. In contrast to this prediction, we show that errors arising from small variations in the chemical potential grow linearly with tetron length at zero temperature. These errors stem from leakage into excited quasiparticle states, which ultimately poison Majorana modes at opposite ends of the tetron, causing errors. We further demonstrate that the dynamics of this leakage is captured by the half Landau-Zener effect, which dictates its dependence on key system parameters such as the superconducting gap, chemical potential variations, and dynamic changes in the spatial profile of Majorana modes. These results motivate further investigations into the impact of leakage on qubit performance and potential mitigation strategies.

quant-ph

Variational simulation of the Lipkin-Meshkov-Glick model on a neutral atom quantum computer

We simulate the Lipkin-Meshkov-Glick (LMG) model using the Variational-Quantum-Eigensolver (VQE) algorithm on a neutral atom quantum computer. We test the ground-state energy of spin systems with up to 15 spins. Two different encoding schemes are used: an individual spin encoding where each spin is represented by one qubit, and an efficient Gray code encoding scheme which only requires a number of qubits that scales with the logarithm of the number of spins. This more efficient encoding, together with zero noise extrapolation techniques, is shown to improve the fidelity of the simulated energies with respect to exact solutions.

quant-ph

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder

Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with valley splitting dominated by alloy disorder, one can expect to encounter pockets of low valley splitting, given a long-enough shuttling path. At such locations, inter-valley tunneling leads to dephasing of the spin wavefunction, substantially reducing the shuttling fidelity. We show how to mitigate this problem by modifying the heterostructure composition, or by varying the vertical electric field, the shuttling velocity, the shape and size of the dot, or the shuttling path. We further show that combinations of these strategies can reduce the shuttling infidelity by several orders of magnitude, putting shuttling fidelities sufficient for error correction within reach.

cond-mat.mes-hall

Using stochastic resonance of two-level systems to increase qubit decoherence times

Two-level systems (TLS) are the major source of dephasing of spin qubits in numerous quantum computing platforms. In spite of much effort, it has been difficult to substantially mitigate the effects of this noise or, in many cases, to fully understand its physical origin. We propose a method to make progress on both of these issues. When an oscillating field is applied to a TLS, stochastic resonance can occur and the noise spectrum is moved to higher frequencies. This shift in the TLS noise spectrum will increase the dephasing times of the qubits that they influence. Furthermore, the details of this effect depend on the physical properties of the noise sources. Thus one can use qubit spectroscopy to investigate their physical properties, specifically the extent to which the TLS themselves possess quantum coherence. We find that it should be possible to determine the dephasing rate and the energy level separation of the TLS themselves in this way.

quant-ph

Multielectron dots provide faster Rabi oscillations when the core electrons are strongly confined

Increasing the number of electrons in electrostatically confined quantum dots can enable faster qubit gates. Although this has been experimentally demonstrated, a detailed quantitative understanding has been missing. Here we study one- and three-electron quantum dots in silicon/silicon-germanium heterostructures within the context of electrically-driven spin resonance (EDSR) using full configuration interaction and tight binding approaches. Our calculations show that anharmonicity of the confinement potential plays an important role: while the EDSR Rabi frequency of electrons in a harmonic potential is indifferent to the electron number, soft anharmonic confinements lead to larger and hard anharmonic confinements lead to smaller Rabi frequencies. We also confirm that double dots allow fast Rabi oscillations, and further suggest that purposefully engineered confinements can also yield similarly fast Rabi oscillations in a single dot. Finally, we discuss the role of interface steps. These findings have important implications for the design of multielectron Si/SiGe quantum dot qubits.

cond-mat.mes-hall

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices.

quant-ph

Latched readout for the quantum dot hybrid qubit

A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a metastable charge configuration whose lifetime is tunnel rate limited, persisting here as long as 2.5 ms. Additionally, we show that working in the (4,1)-(3,2) charge configuration enables a latched readout window that is larger and more tunable than typical charge configurations, because the size of the readout window is determined by an orbital splitting rather than a valley splitting.

cond-mat.mes-hall

Collective neutrino oscillations with tensor networks using a time-dependent variational principle

If a system of flavor-oscillating neutrinos is at high enough densities that neutrino-neutrino coherent forward scatterings are non-negligible, the system becomes a time-dependent many-body problem. An important and open question is whether the flavor evolution is sufficiently described by a mean-field approach or can be strongly affected by correlations arising from two-body interactions in the neutrino Hamiltonian, as measured by nontrivial quantum entanglement. Numerical computations of the time evolution of many-body quantum systems are challenging because the size of the Hilbert space scales exponentially with the number of particles N in the system. Thus, it is important to investigate approximate but beyond-mean-field numerical treatments at larger values of N. Here we investigate the efficacy of tensor network methods to calculate the time evolution of interacting neutrinos at larger values of N than are possible with conventional methods. In particular, we introduce the use of time-dependent variational principle methods to address the long-range (in momentum space) interactions of the neutrino Hamiltonian when including many distinct vacuum oscillation frequencies. We also define new error measures based upon the instantaneously conserved charge operators known for this Hamiltonian to determine validity of large-N tensor network calculations.

hep-ph

How valley-orbit states in silicon quantum dots probe quantum well interfaces

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.

cond-mat.mes-hall

Lipkin model on a quantum computer

Atomic nuclei are important laboratories for exploring and testing new insights into the universe, such as experiments to directly detect dark matter or explore properties of neutrinos. The targets of interest are often heavy, complex nuclei that challenge our ability to reliably model them (as well as quantify the uncertainty of those models) with classical computers. Hence there is great interest in applying quantum computation to nuclear structure for these applications. As an early step in this direction, especially with regards to the uncertainties in the relevant quantum calculations, we develop circuits to implement variational quantum eigensolver (VQE) algorithms for the Lipkin-Meshkov-Glick model, which is often used in the nuclear physics community as a testbed for many-body methods. We present quantum circuits for VQE for two and three particles and discuss the construction of circuits for more particles. Implementing the VQE for a two-particle system on the IBM Quantum Experience, we identify initialization and two-qubit gates as the largest sources of error. We find that error mitigation procedures reduce the errors in the results significantly, but additional quantum hardware improvements are needed for quantum calculations to be sufficiently accurate to be competitive with the best current classical methods.

hep-th

Long-range two-hybrid-qubit gates mediated by a microwave cavity with red sidebands

Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here, we theoretically investigate several schemes for performing gates between two quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics of the quantum dot hybrid qubit gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. Our results suggest that the numerous tuning knobs of quantum dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities $>$95\% for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities $>$99\%.

cond-mat.mes-hall