arXiv subjects

S. N. Coppersmith

Publications and source records attributed to S. N. Coppersmith.

At least 109 records · Page 6Linked to original sources

arXiv2008

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics.

cond-mat.mes-hall↗

arXiv2008

Multiscale theory of valley splitting

The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However, the complexity and size of a realistic device precludes an analytical atomistic description. Here, we develop a fully analytical multiscale theory of valley coupling, by combining effective mass and tight binding approaches. The results are of particular interest for silicon qubits and quantum devices, but also provide insight for GaAs quantum wells.

cond-mat.mes-hall↗

arXiv2007

Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.

cond-mat.mes-hall↗

arXiv2007

Controllable valley splitting in silicon quantum devices

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices.

cond-mat.mes-hall↗

arXiv2006

Spectroscopy of Valley Splitting in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas

The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a linear magnetic field dependence of the valley splitting, and a strong low-field suppression, consistent with recent theory. The resonance linewidth shows a marked enhancement above $T\simeq 300$ mK.

cond-mat.mes-hall↗

arXiv2006

Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells

The authors investigate the magnetic field dependence of the energy splitting between low-lying valley states for electrons in a Si/SiGe quantum well tilted with respect to the crystallographic axis. The presence of atomic steps at the quantum well interface may explain the unexpected, strong suppression of the valley splitting observed in recent experiments. The authors find that the suppression is caused by an interference effect associated with multiple steps, and that the magnetic field dependence arises from the lateral confinement of the electronic wave function. Using numerical simulations, the authors clarify the role of step disorder, obtaining quantitative agreement with the experiments.

cond-mat.mes-hall↗

arXiv2006

Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells

We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The resulting formalism provides rather simple analytical results for several geometries of interest, including a finite square well, a quantum well in an electric field, and a modulation doped two-dimensional electron gas. Of particular importance is the problem of a quantum well in a magnetic field, grown on a miscut substrate. The latter may pose a numerical challenge for atomistic techniques like tight-binding, because of its two-dimensional nature. In the effective mass theory, however, the results are straightforward and analytical. We compare our effective mass results with those of the tight binding theory, obtaining excellent agreement.

cond-mat.mtrl-sci↗

arXiv2006

Renormalization group approach to the P versus NP question

This paper argues that the ideas underlying the renormalization group technique used to characterize phase transitions in condensed matter systems could be useful for distinguishing computational complexity classes. The paper presents a renormalization group transformation that maps an arbitrary Boolean function of $N$ Boolean variables to one of $N-1$ variables. When this transformation is applied repeatedly, the behavior of the resulting sequence of functions is different for a generic Boolean function than for Boolean functions that can be written as a polynomial of degree $ξ$ with $ξ\ll N$ as well as for functions that depend on composite variables such as the arithmetic sum of the inputs. Being able to demonstrate that functions are non-generic is of interest because it suggests an avenue for constructing an algorithm capable of demonstrating that a given Boolean function cannot be computed using resources that are bounded by a polynomial of $N$.

cs.CC↗

arXiv2006

Renormalization group approach to satisfiability

Satisfiability is a classic problem in computational complexity theory, in which one wishes to determine whether an assignment of values to a collection of Boolean variables exists in which all of a collection of clauses composed of logical OR's of these variables is true. Here, a renormalization group transformation is constructed and used to relate the properties of satisfiability problems with different numbers of variables in each clause. The transformation yields new insight into phase transitions delineating "hard" and "easy" satisfiability problems.

cond-mat.stat-mech↗

arXiv2005

The computational complexity of Kauffman nets and the P versus NP problem

Complexity theory as practiced by physicists and computational complexity theory as practiced by computer scientists both characterize how difficult it is to solve complex problems. Here it is shown that the parameters of a specific model can be adjusted so that the problem of finding its global energy minimum is extremely sensitive to small changes in the problem statement. This result has implications not only for studies of the physics of random systems but may also lead to new strategies for resolving the well-known P versus NP question in computational complexity theory.

cond-mat.dis-nn↗

arXiv2005

Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG

The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication.

cond-mat.mes-hall↗

arXiv2004

Electron spin coherence in Si/SiGe quantum wells

The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature.

cond-mat.mtrl-sci↗

arXiv2004

Exchange in a silicon-based quantum dot quantum computer architecture

In bulk silicon, intervalley electronic interference has been shown to lead to strong oscillations in the exchange coupling between impurity electronic wavefunctions, posing a serious manufacturability problem for proposed quantum computers. Here we show that this problem does not arise in proposed architectures using Si/SiGe quantum dots because of the large in-plane strain in Si quantum wells together with the strong confinement potential typical of heterostructures.

cond-mat.mes-hall↗

arXiv2004

Physically-motivated dynamical algorithms for the graph isomorphism problem

We investigate classical and quantum physics-based algorithms for solving the graph isomorphism problem. Our work integrates and extends previous work by Gudkov et al. (cond-mat/0209112) and by Rudolph (quant-ph/0206068). Gudkov et al. propose an algorithm intended to solve the graph isomorphism problem in polynomial time by mimicking a classical dynamical many-particle process. We show that this algorithm fails to distinguish pairs of non-isomorphic strongly regular graphs, thus providing an infinite class of counterexamples. We also show that the simplest quantum generalization of the algorithm also fails. However, by combining Gudkov et al.'s algorithm with a construction proposed by Rudoph in which one examines a graph describing the dynamics of two particles on the original graph, we find an algorithm that successfully distinguishes all pairs of non-isomorphic strongly regular graphs that we tested (with up to 29 vertices).

quant-ph↗

arXiv2004

Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.

cond-mat.mtrl-sci↗

arXiv2004

Entangled Quantum States of Magnetic Dipoles

Free magnetic moments usually manifest themselves in Curie Laws, where weak external magnetic fields produce magnetizations diverging as the reciprocal 1/T of the temperature. for a variety of materials that do not disply static magnetism, including doped semiconductors and certain rare earth intermetallics, the 1/T law is changed to a power law T^-a with a<1. We report here that a considerably simpler material, namely an insulating magneticsalt can also display such a power law, and show via comparison to specific heat data and numerical simulations that quantum mechanics is crucial for its formation. Two quantum mechanical phenomena are needed, namely level splitting - which affects the spectrum of excited states - and entanglement - where the wavefunction of a system with several degrees of freedom cannot be written as a product of wavefunctions for each degree of freedom. Entanglement effects become visible for remarkably small tunnelling terms, and are turned on well before tunnelling has visible effects on the spectrum. Our work is significant because it illustrates that entanglement is at the very heart of a very simple experimental observation for an insulating quantum spin system.

cond-mat.other↗

arXiv2003

Valley splitting in strained silicon quantum wells

A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tight-binding model is developed, it yields much physical insight, and it reproduces the behavior of the splitting in the NEMO results. The splitting is in general nonzero even in the absence of electric field in contrast to previous works. The splitting in a square well oscillates as a function of S, the number of layers in the quantum well, with a period that is determined by the location of the valley minimum in the Brillouin zone. The envelope of the splitting decays as $S^3$. Finally the feasibility of observing such oscillations experimentally in modern Si/SiGe heterostructures is discussed.

cond-mat.mes-hall↗

arXiv2003

Performance Limitations of Flat Histogram Methods and Optimality of Wang-Landau Sampling

We determine the optimal scaling of local-update flat-histogram methods with system size by using a perfect flat-histogram scheme based on the exact density of states of 2D Ising models.The typical tunneling time needed to sample the entire bandwidth does not scale with the number of spins N as the minimal N^2 of an unbiased random walk in energy space. While the scaling is power law for the ferromagnetic and fully frustrated Ising model, for the +/- J nearest-neighbor spin glass the distribution of tunneling times is governed by a fat-tailed Frechet extremal value distribution that obeys exponential scaling. We find that the Wang-Landau algorithm shows the same scaling as the perfect scheme and is thus optimal.

cond-mat.stat-mech↗