arXiv subjects

S. N. Kaul

Publications and source records attributed to S. N. Kaul.

7 recordsLinked to original sources

arXiv2025

Electrical- and magneto-transport across the thermo-elastic martensitic transformation in anti-site-disordered off-stoichiometric Co-Fe-Ti-Si Heusler alloy thin films

In this work, we systematically investigate the effect of Anti-site Disorder (ASD) on electrical resistivity $ρ(T)$ and transverse magnetoresistance $MR_{\perp}$ in off-stoichiometric Co-Fe-Ti-Si (CFTS) thin films across the thermo-elastic martensitic phase transformation (MPT). The CFTS films with A2 ASD exhibit a negative temperature coefficient of resistivity (n-TCR) and an upturn below $\sim 30\,$K. In sharp contrast, the partially L2$_1$-ordered films are metallic in nature, characterized by a resistivity minimum at low temperatures ($T_{\min} \cong 30\,$K) and a positive TCR for $T > T_{\min}$. The change in the sign of TCR finds a straightforward explanation in terms of the competition between the quantum corrections (weak localization, electron-diffuson scattering) and the ballistic scattering mechanisms (electron-magnon and electron-phonon). We find that, stronger the atomic ASD, more prominent the quantum corrections and the weaker the scattering of $e-m$ and $e-p$ scattering. All the CFTS films exhibit a distinct thermal hysteresis and a significant drop in resistivity, symptomatic of a MPT, near the characteristic temperatures: martensite-end $T_{Me} \cong 300\,$K and austenite-begin $T_{\mathrm{Ab}} \cong 325\,$K. Regardless of the strength of ASD, in the martensite phase the anti-symmetric (ASMR) component of $\mathrm{MR}_{\perp}(H)$ dominates over the symmetric (SMR) counterpart, whereas the reverse is true (i.e. SMR $\gg$ ASMR) for the austenite phase at temperatures $T_{\mathrm{Ab}} \cong 325\,$K $\le T \le 375\,$K, where $\mathrm{MR}_{\perp}$ increases very sharply with temperature as the austenite phase grows rapidly at the expense of the martensite phase. The present results assert that the CFTS Heusler alloy thin films are promising candidates for shape-memory devices and for spintronic applications such as spin valves.

cond-mat.mtrl-sci↗

arXiv2023

Random magnetic anisotropy driven transitions in layered perovskite LaSrCoO$_4$

Attempts to unravel the nature of magnetic ordering in LaSrCoO$_4$ (Co$^{3+}$), a compound intermediate between antiferromagnetic (AFM) La$_2$CoO$_4$ (Co$^{2+}$) and ferromagnetic (FM) Sr$_2$CoO$_4$ (Co$^{4+}$), have met with a limited success so far. In this report, the results of a thorough investigation of dc magnetization and ac susceptibility (ACS) in single-phase LaSrCoO$_4$ provide clinching evidence for a thermodynamic paramagnetic (PM) - ferromagnetic (FM) phase transition at T$_{c}$ = 220.5 K, followed at lower temperature (T$_{g}$ = 7.7 K) by a transition to the cluster spin glass (CSG) state. Analysis of the low-field Arrott plot isotherms, in the critical region near T$_{c}$, in terms of the Aharony-Pytte scaling equation of state clearly establishes that the PM-FM transition is basically driven by random magnetic anisotropy (RMA). For temperatures below $\approx$ 30 K, large enough RMA destroys long-range FM order by breaking up the infinite FM network into FM clusters of finite size and leads to the formation of a CSG state at temperatures T $\lesssim$ 8 K by promoting freezing of finite FM clusters in random orientations. Increasing strength of the single-ion magnetocrystalline anisotropy (and hence RMA) with decreasing temperature is taken to reflect an increase in the number of low-spin (LS) Co$^{3+}$ ions at the expense of that of high-spin (HS) Co$^{3+}$ ions. At intermediate temperatures (30 K $\lesssim T \lesssim$ 180 K), spin dynamics has contributions from the infinite FM network (fast relaxation governed by a single anisotropy energy barrier) and finite FM clusters (extremely slow stretched exponential relaxation due to hierarchical energy barriers).

cond-mat.mtrl-sci↗

arXiv2019

Uniaxial anisotropy, intrinsic and extrinsic damping in Co$_{2}$FeSi Heusler alloy thin films

Ferromagnetic resonance (FMR) technique has been used to study the magnetization relaxation processes and magnetic anisotropy in two different series of the Co2FeSi (CFS) Heusler alloy thin films, deposited on the Si(111) substrate by UHV sputtering. While the CFS films of fixed (50 nm) thickness, deposited at different substrate temperatures (TS) ranging from room temperature (RT) to 600^C, constitute the series-I, the CFS films with thickness t varying from 12 nm to 100 nm and deposited at 550^C make up the series-II. In series-I, the CFS films deposited at TS = RT and 200^C are completely amorphous, the one at TS = 300^C is partially crystalline, and those at TS equal 450^C, 550^C and 600^C are completely crystalline with B2 order. By contrast, all the CFS films in series-II are in the fully-developed B2 crystalline state. Irrespective of the strength of disorder and film thickness, angular variation of the resonance field in the film plane unambiguously establishes the presence of global in-plane uniaxial anisotropy. Angular variation of the linewidth in the film plane reveals that, in the CFS thin films of varying thickness, a crossover from the in-plane local four-fold symmetry (cubic anisotropy) to local two-fold symmetry (uniaxial anisotropy) occurs as t exceeds 50 nm. Gilbert damping parameter α decreases monotonously from 0.047 to 0.0078 with decreasing disorder strength (increasing TS) and jumps from 0.008 for the CFS film with t = 50 nm to 0.024 for the film with t equal 75 nm. Such variations of α with TS and t are understood in terms of the changes in the total (spin-up and spin-down) density of states at the Fermi level caused by the disorder and film thickness.

cond-mat.mtrl-sci↗

arXiv2018

Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films

A wide variation in the disorder strength, as inferred from an order of magnitude variation in the longitudinal resistivity of Co2FeSi (CFS) Huesler alloy thin films of fixed (50 nm) thickness, has been achieved by growing these films on Si(111) substrates at substrate temperatures ranging from room temperature (RT) to 600 C. An in-depth study of the influence of disorder on anomalous Hall resistivity,longitudinal resistivity(LR) and magnetoresistance, enabled by this approach, reveals the following. The side-jump mechanism gives a dominant contribution to anomalous Hall resistivity (AHR) in the CFS thin films, regardless of the degree of disorder present. A new and novel contribution to both LR and AHR characterized by the logarithmic temperature dependence at temperatures below the minimum, exclusive to the amorphous CFS films, originates from the scattering of conduction electrons from the diffusive hydrodynamic modes associated with the longitudinal component of magnetization, called diffusons. In these amorphous CFS films, the electron-diffuson, e d, scattering and weak localization (WL) mechanisms compete with that arising from the inelastic electron magnon, e m, scattering to produce the minimum in longitudinal resistivity, whereas the minimum in AHR is caused by the competing contributions from the e d and e m scattering, as WL does not make any contribution to AHR. In sharp contrast, in crystalline films, enhanced electron electron Coulomb interaction (EEI), which is basically responsible for the resistivity minimum, makes no contribution to AHR with the result that AHR does not exhibit a minimum.

cond-mat.mes-hall↗

arXiv2013

Critical behavior of nanocrystalline gadolinium: Evidence for a new universality class

We report on how nanocrystal size affects the critical behavior of the rare-earth metal Gd near the ferromagnetic-to-paramagnetic phase transition. The asymptotic critical behavior of the coarse-grained polycrystalline sample (with an average crystallite size of $L \cong \unit[100]{μm}$) is that of a (pure) \textsl{uniaxial dipolar} ferromagnet, as is the case with single-crystal Gd, albeit the width of the asymptotic critical region (ACR) is reduced. As the grain size approaches $\sim \unit[30]{nm}$, the ACR is so narrow that it could not be accessed in the present experiments. Inaccessibly narrow ACR for $L \sim \unit[30]{nm}$ and the continuous increase in the width of ACR as $L$ decreases from $\unit[16]{nm}$ to $\unit[9.5]{nm}$ basically reflects a crossover to the \textsl{random uniaxial dipolar} fixed point caused by the quenched random-exchange disorder prevalent at the internal interfaces (grain boundaries).

cond-mat.mes-hall↗

arXiv2008

Correlation between site preference of ternary Mn addition in LaAg and superconductivity

The results of an extensive investigation of structure, surface morphology, composition and the superconducting-normal phase diagram of a new unconventional superconductor LaAg1-cMnc with nominal composition c = 0.0, 0.025, 0.05, 0.1, 0.2 and 0.3, reveal the following. The alloys with c = 0, 0.025 and 0.05 are essentially single phase alloys with the actual Mn concentration, x, same as the nominal one, i.e., c = x, whereas in the alloys with c = 0.1, 0.2 and 0.3, the actual Mn concentration of the majority phase (crystalline grains) is x = 0.050(1), 0.080(1) and 0.100(1), respectively. The ternary Mn addition does not alter the CsCl structure of the parent compound LaAg. Neither a structural phase transition occurs nor a long-range antiferromagnetic order exists at any temperature within the range 1.8K < = T < = 50K in any of the Mn containing alloys. Mn has exclusive La (Ag) site preference in the alloy (alloys) with x = c = 0.025 (x < = 0.05 or c < = 0.1) whereas in the alloy with x = c = 0.05, Mn has essentially no site preference in that all the Mn atoms either occupy the La sites or the Ag sites. In the alloys (alloy) with x < = 0.05 (x = c = 0.025), substitution of Ag (La) by Mn at the Ag (La) sub-lattice sites in LaAg host gives rise to unconventional superconductivity (destroys the conventional phonon-mediated superconductivity prevalent in the parent LaAg compound).

cond-mat.mtrl-sci↗

arXiv2007

Dynamic elastic properties and magnetic susceptibility across the austenite-martensite transformation in site-disordered ferromagnetic Ni-Fe-Al alloy

Besides permitting an accurate determination of the ferromagnetic-to-paramagnetic phase transition temperature and the characteristic temperatures for the beginning and end of the growth of martensite (austenite) phase at the expense of austenite (martensite) phase while cooling (heating), the results of an extensive ac susceptibility, sound velocity and internal friction investigation of the thermoelastic martensitic transformation in melt-quenched (site-disordered) Ni55Fe20Al25 alloy provide a clear experimental evidence for the following. Irreversible thermoelastic changes (thermal hysteresis) occur in the austenite phase in the premartensitic regime. In the heating cycle, the system retains the "memory" of the initiation and subsequent growth of the martensitic phase (at the expense of the parent austenite phase) that had taken place during the cooling cycle in the austenite-martensite phase coexistence region. We report and discuss these novel findings in this communication.

cond-mat.mtrl-sci↗