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S. P. Bennett

Publications and source records attributed to S. P. Bennett.

3 recordsLinked to original sources

Determining Magnetic Nanoparticle Size Distributions from Thermomagnetic Measurements

Thermomagnetic measurements are used to obtain the size distribution and anisotropy of magnetic nanoparticles. An analytical transformation method is described which utilizes temperature-dependent zero-field cooling (ZFC) magnetization data to provide a quantitative measurement of the average diameter and relative abundance of superparamagnetic nanoparticles. Applying this method to self-assembled MnAs nanoparticles in MnAs-GaAs composite films reveals a log-normal size distribution and reduced anisotropy for nanoparticles compared to bulk materials. This analytical technique holds promise for rapid assessment of the size distribution of an ensemble of superparamagnetic nanoparticles.

cond-mat.mes-hall

Large Coercivity in Nanostructured Rare-earth-free MnxGa Films

The magnetic hysteresis of MnxGa films exhibit remarkably large coercive fields as high as 2.5 T when fabricated with nanoscale particles of a suitable size and orientation. This coercivity is an order of magnitude larger than in well-ordered epitaxial film counterparts and bulk materials. The enhanced coercivity is attributed to the combination of large magnetocrystalline anisotropy and ~ 50 nm size nanoparticles. The large coercivity is also replicated in the electrical properties through the anomalous Hall effect. The magnitude of the coercivity approaches that found in rare-earth magnets, making them attractive for rare-earth-free magnet applications.

cond-mat.mtrl-sci

Universal Properties of Linear Magnetoresistance in Strongly Disordered Semiconductors

Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite material, it is found that the magnitude of the linear magnetoresistance (LMR) is numerically equal to the carrier mobility over a wide range and is independent of carrier density. This behavior is complementary to the Hall effect that is independent of the mobility and dependent on the carrier density. Moreover, the LMR appears to be insensitive to the details of the disorder and points to a universal explanation of classical LMR that can be applied to other material systems.

cond-mat.mes-hall