arXiv subjects

S. P. Lebedev

Publications and source records attributed to S. P. Lebedev.

3 recordsLinked to original sources

arXiv2026

Revealing the (111) surface electronic structure of epitaxially grown Na$_2$KSb photocathode

A recent study has established the Na$_2$KSb(Cs) photocathode as a highly efficient emitter of spin-polarized electrons. However, the electronic structure of alkali antimonides remains poorly understood. In this work, we report the first crystalline epitaxial growth of Na$_2$KSb films, achieved via chemical vapor deposition (CVD) on a graphene-coated SiC(0001) substrate. The high crystalline quality of these films enabled a direct investigation of the material's electronic structure using angle-resolved photoemission spectroscopy (ARPES). By comparing the experimental results with density functional theory (DFT) calculations, we have identified dispersive surface states originating from different terminations of the Na$_2$KSb(111) surface. Furthermore, we demonstrate that the crystalline order of the film is preserved following its activation via the deposition of Cs and Sb. This finding opens a pathway for investigating the electronic structure of multialkali Na$_2$KSb(Cs) photocathodes and for rationally improving their properties.

cond-mat.mtrl-sci↗

arXiv2016

Optical thermometry based on level anticrossing in silicon carbide

We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of $100 \,$mK/Hz$^{1/2}$ for a detection volume of approximately $10^{-6} \,$mm$^{3}$. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.

cond-mat.mtrl-sci↗

arXiv2012

Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer

Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov- de Haas oscillations shown the features, typical for single-layered graphene. The low temperature resistance demonstrated an increase with temperature increase, which also corresponds to a behavior typical for single-layered graphene (antilocalization). However at higher temperatures the resistance decreased with an increase of temperature, which corresponds to a weak localization. We believe that the observed behavior can be explained by a parallel combination of contributions to the conductivity of single-layered graphene and of multigraphene, the latter allowing to escape damages of the graphene by atmosphere effect.

cond-mat.mtrl-sci↗