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S. Q. Lim

Publications and source records attributed to S. Q. Lim.

4 recordsLinked to original sources

Coherent all-optical control of the germanium vacancy in diamond

The germanium vacancy in diamond (GeV) is a promising candidate for color center based quantum networking. Yet, like for other group-IV vacancy defects in diamond, achieving fast, high-fidelity qubit operations using traditional magnetic resonance techniques is experimentally challenging due to a weak magnetic dipole and susceptibility to thermally induced decoherence. Here, we perform all-optical control of the GeV and realize Rabi frequencies exceeding $\sim 20$~MHz. We do so by driving the two $Λ$-systems of the GeV simultaneously and apply this to probe the spin coherence ($T_2^*=224\pm14$~ns, $T_2^{\rm H}=11.9\pm0.3$~$μ$s). Our control scheme is applicable to other color centers and particularly, other group-IV defects for which, the scheme may be optimized to improve all-optical control in these systems.

cond-mat.mes-hall

Strong coupling of a superconducting flux qubit to single bismuth donors

The realization of a quantum computer represents a tremendous scientific and technological challenge due to the extreme fragility of quantum information. The physical support of information, namely the quantum bit or qubit, must at the same time be strongly coupled to other qubits by gates to compute information, and well decoupled from its environment to keep its quantum behavior. An interesting physical system for realizing such qubits are magnetic impurities in semiconductors, such as bismuth donors in silicon. Indeed, spins associated to bismuth donors can reach an extremely long coherence time -- of the order of seconds. Yet it is extremely difficult to establish and control efficient gates between these spins. Here we demonstrate a protocol where single bismuth donors can coherently transfer their quantum information to a superconducting flux qubit, which acts as a mediator or quantum bus. This superconducting device allows to connect distant spins on-demand with little impact on their coherent behavior.

cond-mat.mes-hall

Deep-level structure of the spin-active recombination center in dilute nitrides

A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment.

cond-mat.mtrl-sci

An Integrated Widefield Probe for Practical Diamond Nitrogen-Vacancy Microscopy

The widefield diamond nitrogen-vacancy (NV) microscope is a powerful instrument for imaging magnetic fields. However, a key limitation impeding its wider adoption is its complex operation, in part due to the difficulty of precisely interfacing the sensor and sample to achieve optimum spatial resolution. Here we demonstrate a solution to this interfacing problem that is both practical and reliably minimizes NV-sample standoff. We built a compact widefield NV microscope which incorporates an integrated widefield diamond probe with full position and angular control, and developed a systematic alignment procedure based on optical interference fringes. Using this platform, we imaged an ultrathin (1 nm) magnetic film test sample, and conducted a detailed study of the spatial resolution. We reproducibly achieved an estimated NV-sample standoff (and hence spatial resolution) of at most $\sim2~μ$m across a $\sim0.5$ mm field of view. Guided by these results, we suggest future improvements for approaching the optical diffraction limit. This work is a step towards realizing a widefield NV microscope suitable for routine high-throughput mapping of magnetic fields.

cond-mat.mes-hall