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S. Russo

Publications and source records attributed to S. Russo.

At least 19 recordsLinked to original sources

Performance of the High-Angle Time Projection Chambers in the Upgraded T2K Off-Axis Near Detector

The off-axis magnetic near detector of the T2K experiment has undergone a significant upgrade, including the construction and installation of two new Time Projection Chambers featuring innovative resistive Micromegas technology and a field cage composed of thin composite walls. This paper provides a detailed description of the new components of the chambers, including the gas system, gas monitoring chambers, and data acquisition system. Additionally, it reports the results of extensive testing using both neutrino beams and cosmic rays, with comparisons between data and Monte Carlo simulations. The new detectors achieve improved spatial resolution and enhanced particle identification capabilities which are crucial for the precision goals of the T2K experiment.

physics.ins-det

Characterization of Charge Spreading and Gain of Encapsulated Resistive Micromegas Detectors for the Upgrade of the T2K Near Detector Time Projection Chambers

An upgrade of the near detector of the T2K long baseline neutrino oscillation experiment is currently being conducted. This upgrade will include two new Time Projection Chambers, each equipped with 16 charge readout resistive Micromegas modules. A procedure to validate the performance of the detectors at different stages of production has been developed and implemented to ensure a proper and reliable operation of the detectors once installed. A dedicated X-ray test bench is used to characterize the detectors by scanning each pad individually and to precisely measure the uniformity of the gain and the deposited energy resolution over the pad plane. An energy resolution of about 10% is obtained. A detailed physical model has been developed to describe the charge dispersion phenomena in the resistive Micromegas anode. The detailed physical description includes initial ionization, electron drift, diffusion effects and the readout electronics effects. The model provides an excellent characterization of the charge spreading of the experimental measurements and allowed the simultaneous extraction of gain and RC information of the modules.

physics.ins-det

Analysis of test beam data taken with a prototype of TPC with resistive Micromegas for the T2K Near Detector upgrade

In this paper we describe the performance of a prototype of the High Angle Time Projection Chambers (HA-TPCs) that are being produced for the Near Detector (ND280) upgrade of the T2K experiment. The two HA-TPCs of ND280 will be instrumented with eight Encapsulated Resistive Anode Micromegas (ERAM) on each endplate, thus constituting in total 32 ERAMs. This innovative technique allows the detection of the charge emitted by ionization electrons over several pads, improving the determination of the track position. The TPC prototype has been equipped with the first ERAM module produced for T2K and with the HA-TPC readout electronics chain and it has been exposed to the DESY Test Beam in order to measure spatial and dE/dx resolution. In this paper we characterize the performances of the ERAM and, for the first time, we compare them with a newly developed simulation of the detector response. Spatial resolution better than 800 ${\mu \rm m}$ and dE/dx resolution better than 10% are observed for all the incident angles and for all the drift distances of interest. All the main features of the data are correctly reproduced by the simulation and these performances fully fulfill the requirements for the HA-TPCs of T2K.

physics.ins-det

Dosimetric commissioning and quality assurance of scanned ion beams at the Italian National Center for Oncological Hadrontherapy

Purpose: To describe the dosimetric commissioning and quality assurance (QA) of the actively scanned proton and carbon ion beams at the Italian National Center for Oncological Hadrontherapy. Methods: The laterally integrated depth-dose-distributions (IDDs) were acquired with the PTW Peakfinder, a variable depth water column, equipped with two Bragg peak ionization chambers. FLUKA MC code was used to generate the energy libraries, the IDDs in water, and the fragment spectra for carbon beams. EBT3 films were used for spot size measurements, beam position over the scan field, and homogeneity in 2D-fields. Beam monitor calibration was performed in terms of number of particles per MU using both a Farmer-type and an Advanced Markus ionization chamber. The beam position at the isocenter, beam monitor calibration curve, dose constancy in the center of the spread-out-Bragg-peak, dose homogeneity in 2D-fields, beam energy, spot size, and spot position over the scan field are all checked on a daily basis for both protons and carbon ions and on all beam lines. Results: The simulated IDDs showed an excellent agreement with the measured experimental curves. The measured FWHM of the pencil beam in air at the isocenter was from 0.7 to 2.2 cm for protons. For carbon ions, two sets of spot size are available: from 0.4 to 0.8 cm (for the smaller) and from 0.8 to 1.1 cm (for the larger one). The spot position was within +/-1 mm over the whole 20x20 cm2 scan field; homogeneity in a uniform squared field was within +/-5% for both particle types at any energy. QA results exceeding tolerance levels were rarely found. In the reporting period, the machine downtime was around 6%, of which 4.5% was due to planned maintenance shutdowns. Conclusions: After successful dosimetric beam commissioning, quality assurance measurements performed during a 24-month period show very stable beam characteristics.

physics.med-ph

Laser writable high-K dielectric for van der Waals nano-electronics

Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-functional few nm thick high-k oxide within van der Waals devices without degrading the properties of the neighbouring 2D materials. This is achieved by in-situ laser oxidation of embedded few layer HfS2 crystals. The resultant oxide is found to be in the amorphous phase with a dielectric constant of k~15 and break-down electric fields in the range of 0.5-0.6 V/nm. This transformation allows for the creation of a variety of fundamental nano-electronic and opto-electronic devices including, flexible Schottky barrier field effect transistors, dual gated graphene transistors as well as vertical light emitting and detecting tunnelling transistors. Furthermore, upon dielectric break-down, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching between two resistance states. This allows for the creation of resistive switching random access memories (ReRAMs). We believe that this method of embedding a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multi-functional van der Waals devices.

cond-mat.mes-hall

Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene

Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in optical spectroscopy. Here we report the first direct observation of the electric field tunable energy gap in electronic transport experiments on doubly gated suspended ABC-trilayer graphene. From a systematic study of the non-linearities in current \textit{versus} voltage characteristics and the temperature dependence of the conductivity we demonstrate that thermally activated transport over the energy-gap dominates the electrical response of these transistors. The estimated values for energy gap from the temperature dependence and from the current voltage characteristics follow the theoretically expected electric field dependence with critical exponent $3/2$. These experiments indicate that high quality few-layer graphene are suitable candidates for exploring novel tunable THz light sources and detectors.

cond-mat.mes-hall

Approaching magnetic ordering in graphene materials by FeCl$_3$ intercalation

We show the successful intercalation of large area (1 cm$^2$) epitaxial few-layer graphene grown on 4H-SiC with FeCl$_3$. Upon intercalation the resistivity of this system drops from an average value of $\approx 200 \ \Omega/sq$ to $\approx 16 \ \Omega/sq$ at room temperature. The magneto-conductance shows a weak localization feature with a temperature dependence typical of graphene Dirac fermions demonstrating the decoupling into parallel hole gases of each carbon layer composing the FeCl$_3$ intercalated structure. The phase coherence length ($\approx 1.2 \mu$m at 280 mK) decreases rapidly only for temperatures higher than the 2-D magnetic ordering in the intercalant layer while it tends to saturate for temperatures lower than the antiferromagnetic ordering between the planes of FeCl$_3$ molecules providing the first evidence for magnetic ordering in the extreme two-dimensional limit of graphene.

cond-mat.mes-hall

Unforeseen high temperature and humidity stability of FeCl$_3$ intercalated few layer graphene

We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman spectroscopy conclusively demonstrate the unforeseen stability of this transparent conductor to a relative humidity up to $100 \%$ at room temperature for 25 days, to a temperature up to $150\,^\circ$C in atmosphere and up to a temperature as high as $620\,^\circ$C in vacuum, that is more than twice higher than the temperature at which the intercalation is conducted. The stability of FeCl$_3$ intercalated few-layer graphene together with its unique values of low square resistance and high optical transparency, makes this material an attractive transparent conductor in future flexible electronic applications.

cond-mat.mtrl-sci

High Efficiency CVD Graphene-lead (Pb) Cooper Pair Splitter

We demonstrate high efficiency Cooper pair splitting in a graphene-based device. We utilize a true Y-shape design effectively placing the splitting channels closer together: graphene is used as the central superconducting electrode as well as QD output channels, unlike previous designs where a conventional superconductor was used with tunnel barriers to the quantum dots (QD) of a different material. Superconductivity in graphene is induced via the proximity effect, thus resulting in both a large measured superconducting gap $\Delta=0.5$meV, and a long coherence length $\xi=200$nm. The graphene-graphene, flat, two dimensional, superconductor-QD interface lowers the capacitance of the quantum dots, thus increasing the charging energy $E_C$ (in contrast to previous devices). As a result we measure a visibility of up to 96% and a splitting efficiency of up to 62%. Finally, the devices utilize graphene grown by chemical vapor deposition allowing for a standardized device design with potential for increased complexity.

cond-mat.mes-hall

Big Data in Critical Infrastructures Security Monitoring: Challenges and Opportunities

Critical Infrastructures (CIs), such as smart power grids, transport systems, and financial infrastructures, are more and more vulnerable to cyber threats, due to the adoption of commodity computing facilities. Despite the use of several monitoring tools, recent attacks have proven that current defensive mechanisms for CIs are not effective enough against most advanced threats. In this paper we explore the idea of a framework leveraging multiple data sources to improve protection capabilities of CIs. Challenges and opportunities are discussed along three main research directions: i) use of distinct and heterogeneous data sources, ii) monitoring with adaptive granularity, and iii) attack modeling and runtime combination of multiple data analysis techniques.

cs.SE

Heterogeneity for Increasing Performance and Reliability of Self-Reconfigurable Multi-Robot Organisms

Homogeneity and heterogeneity represent a well-known trade-off in the design of modular robot systems. This work addresses the heterogeneity concept, its rationales, design choices and performance evaluation. We introduce challenges for self-reconfigurable systems, show advances of mechatronic and software design of heterogeneous platforms and discuss experiments, which intend to demonstrate usability and performance of this system.

cs.RO

Stacking-order dependent transport properties of trilayer graphene

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of ν= 2, 4, 6... with a step of Δν= 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at ν= 6 and 10 with 4-fold spin and valley degeneracy.

cond-mat.mes-hall

Tuning the electronic transport properties of graphene through functionalisation with fluorine

Engineering the electronic properties of graphene has triggered great interest for potential applications in electronics and opto-electronics. Here we demonstrate the possibility to tune the electronic transport properties of graphene monolayers and multilayers by functionalisation with fluorine. We show that by adjusting the fluorine content different electronic transport regimes can be accessed. For monolayer samples, with increasing the fluorine content, we observe a transition from electronic transport through Mott variable range hopping in two dimensions to Efros - Shklovskii variable range hopping. Multilayer fluorinated graphene with high concentration of fluorine show two-dimensional Mott variable range hopping transport, whereas CF0.28 multilayer flakes have a band gap of 0.25eV and exhibit thermally activated transport. Our experimental findings demonstrate that the ability to control the degree of functionalisation of graphene is instrumental to engineer different electronic properties in graphene materials.

cond-mat.mes-hall

Electronic transport properties of few-layer graphene materials

Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.

cond-mat.mes-hall

Tuneable electronic properties in graphene

Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices.

cond-mat.mes-hall

Accessing the transport properties of graphene and its multi-layers at high carrier density

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the conductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field-effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.

cond-mat.mes-hall

Measurement of the atmospheric muon flux with the NEMO Phase-1 detector

The NEMO Collaboration installed and operated an underwater detector including prototypes of the critical elements of a possible underwater km3 neutrino telescope: a four-floor tower (called Mini-Tower) and a Junction Box. The detector was developed to test some of the main systems of the km3 detector, including the data transmission, the power distribution, the timing calibration and the acoustic positioning systems as well as to verify the capabilities of a single tridimensional detection structure to reconstruct muon tracks. We present results of the analysis of the data collected with the NEMO Mini-Tower. The position of photomultiplier tubes (PMTs) is determined through the acoustic position system. Signals detected with PMTs are used to reconstruct the tracks of atmospheric muons. The angular distribution of atmospheric muons was measured and results compared with Monte Carlo simulations.

astro-ph.IM

Double-gated graphene-based devices

We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few layer graphene systems. Here we discuss technological details that are important for the fabrication of top gated structures, based on electron-gun evaporation of SiO$_2$. We perform a statistical study that demonstrates how --contrary to expectations-- the breakdown field of electron-gun evaporated thin SiO$_2$ films is comparable to that of thermally grown oxide layers. We find that a high breakdown field can be achieved in evaporated SiO$_2$ only if the oxide deposition is directly followed by the metallization of the top electrodes, without exposure to air of the SiO$_2$ layer.

cond-mat.mes-hall