arXiv subjects

S. Sanvito

Publications and source records attributed to S. Sanvito.

At least 37 records · Page 2Linked to original sources

arXiv2009

Polaronic distortion and vacancy-induced magnetism in MgO

The electronic structure of the neutral and singly charged Mg vacancy in MgO is investigated using density functional theory. For both defects, semilocal exchange correlation functionals such as the local spin density approximation incorrectly predict a delocalized degenerate ground state. In contrast functionals that take strong correlation effects into account predict a localized solution, in agreement with spin resonance experiments. Our results, obtained with the HSE hybrid, atomic self-interaction corrected and LDA+U functionals, provide a number of constraints to the possibility of ferromagnetism in hole doped MgO.

cond-mat.mtrl-sci↗

arXiv2009

MgN: a new promising material for spintronic applications

Density functional theory calculations demonstrate that rocksalt MgN is a magnetic material at the verge of half-metallicity, with an electronic structure robust against strong correlations and spin-orbit interaction. Furthermore the calculated heat of formation describes the compound as metastable and suggests that it can be fabricated by tuning the relative Mg and N abundance during growth. Intriguingly the equilibrium lattice constant is close to that of MgO, so that MgN is likely to form as an inclusion during the fabrication of N-doped MgO. We then speculate that the MgO/MgN system may represent a unique materials platform for magnetic tunnel junctions not incorporating any transition metals.

cond-mat.mtrl-sci↗

arXiv2009

Electronic transport calculations for rough interfaces in Al, Cu, Ag, and Au

We present results of electronic structure and transport calculations for metallic interfaces, based on density functional theory and the non-equilibrium Green's functions method. Starting from the electronic structure of smooth Al, Cu, Ag, and Au interfaces, we study the effects of different kinds of interface roughness on the transmission coefficient and the I-V characteristic. In particular, we compare prototypical interface distortions, including vacancies and metallic impurities.

cond-mat.mes-hall↗

arXiv2009

Magnetic state electrical readout of Mn12 molecules

We demonstrate that the different magnetic states of a Mn12 molecule can be distinguished in a two-probe transport experiment from a complete knowledge of the current-voltage curve. Our results, obtained with state-of-the-art non-equilibrium transport methods combined with density functional theory, demonstrate that spin configuration-specific negative differential resistances (NDRs) appear in the I-V curves. These originate from the interplay between electron localization and the re-hybridization of the molecular levels in an external electric field and allow the detection of the molecule's spin-state.

cond-mat.mtrl-sci↗

arXiv2009

Simulating STM transport in alkanes from first principles

Simulations of scanning tunneling microscopy measurements for molecules on surfaces are traditionally based on a perturbative approach, most typically employing the Tersoff-Hamann method. This assumes that the STM tip is far from the sample so that the two do not interact with each other. However, when the tip gets close to the molecule to perform measurements, the electrostatic interplay between the tip and substrate may generate non-trivial potential distribution, charge transfer and forces, all of which may alter the electronic and physical structure of the molecule. These effects are investigated with the ab initio quantum transport code SMEAGOL, combining non-equilibrium Green's functions formalism with density functional theory. In particular, we investigate alkanethiol molecules terminated with either CH3 or CF3 end-groups on gold surfaces, for which recent experimental data are available. We discuss the effects connected to the interaction between the STM tip and the molecule, as well as the asymmetric charge transfer between the molecule and the electrodes.

cond-mat.mes-hall↗

arXiv2008

Structural relaxation effects on interface and transport properties of Fe/MgO(001) tunnel junctions

The interface structure of Fe/MgO(100) magnetic tunnel junctions predicted by density functional theory (DFT) depends significantly on the choice of exchange and correlation functional. Bader analysis reveals that structures obtained by relaxing the cell with the local spin-density approximation (LSDA) display a different charge transfer than those relaxed with the generalized gradient approximation (GGA). As a consequence, the electronic transport is found to be extremely sensitive to the interface structure. In particular, the conductance for the LSDA-relaxed geometry is about one order of magnitude smaller than that of the GGA-relaxed one. The high sensitivity of the electronic current to the details of the interface might explain the discrepancy between the experimental and calculated values of magnetoresistance.

cond-mat.mtrl-sci↗

arXiv2008

I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions

In this work, we calculate with ab initio methods the current-voltage characteristics for ideal single- and double-barrier Fe/MgO (001) magnetic tunnel junctions. The current is calculated in the phase-coherent limit by using the recently developed SMEAGOL code, combining the nonequilibrium Green function formalism with density-functional theory. In general we find that double-barrier junctions display a larger magnetoresistance, which decays with bias at a slower pace than their single-barrier counterparts. This is explained in terms of enhanced spin filtering from the middle Fe layer sandwiched in between the two MgO barriers. In addition, for double-barrier tunnel junctions, we find a well defined peak in the magnetoresistance at a voltage of V=0.1 V. This is the signature of resonant tunneling across a majority quantum well state. Our findings are discussed in relation to recent experiments.

cond-mat.other↗

arXiv2008

Predicting d$^0$ magnetism

Predicting magnetism originating from 2$p$ orbitals is a delicate problem, which depends on the subtle interplay between covalency and Hund's coupling. Calculations based on density functional theory and the local spin density approximation fail in two remarkably different ways. On the one hand the excessive delocalization of spin-polarized holes leads to half-metallic ground states and the expectation of room temperature ferromagnetism. On the other hand, in some cases a magnetic ground state may not be predicted at all. We demonstrate that a simple self-interaction correction scheme modifies both these situations via an enhanced localization of the holes responsible for the magnetism and possibly Jahn-Teller distortion. In both cases the ground state becomes insulating and the magnetic coupling between the impurities weak.

cond-mat.mtrl-sci↗

arXiv2008

Impurity-Ion pair induced high-temperature ferromagnetism in Co-doped ZnO

Magnetic 3d-ions doped into wide-gap oxides show signatures of room temperature ferromagnetism, although their concentration is two orders of magnitude smaller than that in conventional magnets. The prototype of these exceptional materials is Co-doped ZnO, for which an explanation of the room temperature ferromagnetism is still elusive. Here we demonstrate that magnetism originates from Co2+ oxygen-vacancy pairs with a partially filled level close to the ZnO conduction band minimum. The magnetic interaction between these pairs is sufficiently long-ranged to cause percolation at moderate concentrations. However, magnetically correlated clusters large enough to show hysteresis at room temperature already form below the percolation threshold and explain the current experimental findings. Our work demonstrates that the magnetism in ZnO:Co is entirely governed by intrinsic defects and a phase diagram is presented. This suggests a recipe for tailoring the magnetic properties of spintronics materials by controlling their intrinsic defects.

cond-mat.mtrl-sci↗

arXiv2007

Effects of self-interaction corrections on the transport properties of phenyl-based molecular junctions

In transport calculations for molecular junctions based on density functional theory the choice of exchange and correlation functional may dramatically affect the results. In particular local and semi-local functionals tend to over-delocalize the molecular levels thus artificially increasing their broadening. In addition the same molecular levels are usually misplaced with respect to the Fermi level of the electrodes. These shortfalls are reminiscent of the inability of local functionals to describe Mott-Hubbard insulators, but they can be corrected with a simple and computationally undemanding self-interaction correction scheme. We apply such a scheme, as implemented in our transport code Smeagol, to a variety of phenyl-based molecular junctions attached to gold electrodes. In general the corrections reduce the current, since the resonant Kohn-Sham states of the molecule are shifted away from the contact Fermi level. In contrast, when the junction is already described as insulating by local exchange and correlation potentials, the corrections are minimal and the I-V is only weakly modified.

cond-mat.mes-hall↗

arXiv2007

Polarizability of molecular chains: does one need exact exchange?

Standard density functional approximations greatly over-estimate the static polarizability of longchain polymers, but Hartree-Fock or exact exchange calculations do not. Simple self-interaction corrected (SIC) approximations can be even better than exact exchange, while their computational cost can scale only linearly with the number of occupied orbitals.

physics.atm-clus↗

arXiv2007

Exchange parameters from approximate self-interaction correction scheme

The approximate atomic self-interaction corrections (ASIC) method to density functional theory is put to the test by calculating the exchange interaction for a number of prototypical materials, critical to local exchange and correlation functionals. ASIC total energy calculations are mapped onto an Heisenberg pair-wise interaction and the exchange constants J are compared to those obtained with other methods. In general the ASIC scheme drastically improves the bandstructure, which for almost all the cases investigated resemble closely available photo-emission data. In contrast the results for the exchange parameters are less satisfactory. Although ASIC performs reasonably well for systems where the magnetism originates from half-filled bands, it suffers from similar problems than those of LDA for other situations. In particular the exchange constants are still overestimated. This reflects a subtle interplay between exchange and correlation energy, not captured by the ASIC.

cond-mat.mtrl-sci↗

arXiv2007

Is magnetoresistance in excess of 1,000 % possible in Ni point contacts?

Electronic transport in nickel magnetic point contacts is investigated with a combination of density functional theory and the non-equilibrium Green functions method. In particular we address the possibility of huge ballistic magnetoresistance in impurity-free point contacts and the effects of oxygen impurities. On-site corrections over the local spin density approximation (LSDA) for the exchange and correlation potential, namely the LDA+U method, are applied in order to account for low-coordination and strong correlations. We show that impurity-free point contacts present magnetoresistance never in excess of 50%. This value can raise up to about 450 % in the case of oxygen contamination. These results suggest that magnetoresistance in excess of 1,000 % can not have solely electronic origin.

cond-mat.mtrl-sci↗

arXiv2006

Efficient atomic self-interaction correction scheme for non-equilibrium quantum transport

Density functional theory calculations of electronic transport based on local exchange and correlation functionals contain self-interaction errors. These originate from the interaction of an electron with the potential generated by itself and may be significant in metal-molecule-metal junctions due to the localized nature of the molecular orbitals. As a consequence, insulating molecules in weak contact with metallic electrodes erroneously form highly conducting junctions, a failure similar to the inability of local functionals of describing Mott-Hubbard insulators. Here we present a fully self-consistent and still computationally undemanding self-interaction correction scheme that overcomes these limitations. The method is implemented in the Green's function non-equilibrium transport code Smeagol and applied to the prototypical cases of benzene molecules sandwiched between gold electrodes. The self-interaction corrected Kohn-Sham highest occupied molecular orbital now reproduces closely the negative of the molecular ionization potential and is moved away from the gold Fermi energy. This leads to a drastic reduction of the low bias current in much better agreement with experiments.

cond-mat.mes-hall↗

arXiv2006

Atomic self-interaction correction for molecules and solids

We present an atomic orbital based approximate scheme for self-interaction correction (SIC) to the local density approximation of density functional theory. The method, based on the idea of Filippetti and Spaldin [Phys. Rev. B 67, 125109 (2003)], is implemented in a code using localized numerical atomic orbital basis sets and is now suitable for both molecules and extended solids. After deriving the fundamental equations as a non-variational approximation of the self-consistent SIC theory, we present results for a wide range of molecules and insulators. In particular, we investigate the effect of re-scaling the self-interaction correction and we establish a link with the existing atomic-like corrective scheme LDA+U. We find that when no re-scaling is applied, i.e. when we consider the entire atomic correction, the Kohn-Sham HOMO eigenvalue is a rather good approximation to the experimental ionization potential for molecules. Similarly the HOMO eigenvalues of negatively charged molecules reproduce closely the molecular affinities. In contrast a re-scaling of about 50% is necessary to reproduce insulator bandgaps in solids, which otherwise are largely overestimated. The method therefore represents a Kohn-Sham based single-particle theory and offers good prospects for applications where the actual position of the Kohn-Sham eigenvalues is important, such as quantum transport.

cond-mat.str-el↗

arXiv2006

Conductance oscillations in zigzag platinum chains

Using first principles simulations we perform a detailed study of the structural, electronic and transport properties of monoatomic platinum chains, sandwiched between platinum electrodes. First we demonstrate that the most stable atomic configuration corresponds to a zigzag arrangement that gradually straightens as the chains are stretched. Secondly, we find that the conductance at equilibrium atomic spacing does not oscillate with the number of atoms $n$ in the chain, but instead decreases almost monotonically with $n$. In contrast, the conductances of chains of fixed $n$ oscillate as the end atoms are pulled apart, due to the gradual closing and opening of conductance channels as the chain straightens.

cond-mat.mtrl-sci↗

arXiv2005

Inelastic transport in molecular spin valves

We present a study of the effects of inelastic scattering on the transport properties of various nanoscale devices, namely H$_2$ molecules sandwiched between Pt contacts, and a spin-valve made by an organic molecule attached to model half-metal ferromagnetic current/voltage probes. In both cases we use a tight-binding Su-Schrieffer-Heeger Hamiltonian and the inelastic effects are treated with a multi-channel method, including Pauli exclusion principle. In the case of the H$_2$ molecule, we find that inelastic backscattering is responsible for the drop of the differential conductance at biases larger than the excitation energy of the lower of the molecular phonon modes. In the case of the spin-valve, we investigate the different spin-currents and the magnetoresistance as a function of the position of the Fermi level with respect to the spin-polarized band edges. In general inelastic scattering reduces the spin-polarization of the current and consequently the magnetoresistance.

cond-mat.mes-hall↗

arXiv2005

The Smeagol method for spin- and molecular-electronics

{\it Ab initio} computational methods for electronic transport in nanoscaled systems are an invaluable tool for the design of quantum devices. We have developed a flexible and efficient algorithm for evaluating $I$-$V$ characteristics of atomic junctions, which integrates the non-equilibrium Green's function method with density functional theory. This is currently implemented in the package {\it Smeagol}. The heart of {\it Smeagol} is our novel scheme for constructing the surface Green's functions describing the current/voltage probes. It consists of a direct summation of both open and closed scattering channels together with a regularization procedure of the Hamiltonian, and provides great improvements over standard recursive methods. In particular it allows us to tackle material systems with complicated electronic structures, such as magnetic transition metals. Here we present a detailed description of {\it Smeagol} together with an extensive range of applications relevant for the two burgeoning fields of spin and molecular-electronics.

cond-mat.mes-hall↗