arXiv subjects

S. Satpathy

Publications and source records attributed to S. Satpathy.

At least 19 recordsLinked to original sources

arXiv2026

Topological Hall effect due to electron-skyrmion scattering

Electron scattering from chiral spin textures such as skyrmions is fundamental to the understanding of transport in more complex systems, including skyrmion crystals. Most of the previous studies have focused on the weak-coupling regime, where the exchange interaction is small compared with the electron energy. Real materials, however, often lie in the strong-coupling regime, which exhibits qualitatively different behavior. Using the Lippmann-Schwinger equation and Green's function formalism, valid for all coupling strengths, we uncover several new features in the scattering cross section, including Ramsauer-Townsend minima, pronounced intermediate-coupling resonances, and Landau-level resonances for skyrmions with larger winding numbers. These features strongly influence the topological and spin Hall conductivities, which depend sensitively on the incident electron energy. Our work provides important insights into the Hall transport in collective chiral spin textures such as the skyrmion crystal.

cond-mat.mtrl-sci↗

arXiv2025

Spin and Orbital Edelstein effect in gated monolayer transition metal dichalcogenides

The Edelstein effect consists of the non-equilibrium accumulation of magnetization in response to an applied electric field in systems with broken inversion symmetry. While the spin Edelstein effect (SEE), originating from spin moments, is well established, its orbital counterpart, where magnetization arises from orbital moment, has only recently begun to attract attention. In this work, we investigate the orbital Edelstein effect (OEE) in gated monolayer transition-metal dichalcogenides (TMDs), such as MoS2, by using first-principles density-functional calculations with both electron and hole doping. The gate-induced broken mirror symmetry produces a Rashba-type chiral spin/orbital angular momentum texture, which in turn leads to the Edelstein effect in response to an applied in-plane electric field. We find that for electron doping the Edelstein response is dominated by the orbital channel, whereas for hole doping the orbital and spin contributions are comparable. For the case of hole doping, both OEE and SEE are strongly enhanced by a small amount of strain, due to strain-driven shifts between the Gamma and K/K' valley energies. We derive analytical expressions for the spin and orbital Edelstein susceptibilities and evaluate their magnitudes from first-principles. Remarkably, the predicted OEE in gated monolayer TMDs is an order of magnitude larger than values reported in previously studied systems. Our results identify TMDs as promising platforms for studying the orbital Edelstein effect and highlight their potential applications in spintronics devices.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Dynamics of Electron Scattering from Skyrmions

Scattering of electrons from chiral spin textures such as the skyrmions is an emerging research area due to its richness in topological quantum transport, which is significant for spintronic devices. We study the dynamical process of scattering of the spin-$\frac{1}{2}$ particles in the form of Gaussian wavepackets from skyrmions with the aid of the non-relativistic time-dependent Schr\"odinger equation. The scattering cross section shows a rich angular dependence and is deterministically influenced by the iterative flipping of the spin state inside the skyrmion. The latter leads to a set of non-trivial outcomes which include finite transmission and reflection probabilities irrespective of interaction strength, formation of secondary wavefronts associated with back-converted spin components, and a long-lived quasi-bound state at the scattering center. In addition to the rich and intriguing physics, the numerical recipe developed here can be easily adopted for any arbitrary spin texture, which will prepare a playground to explore tunable spin transport.

cond-mat.mes-hall↗

arXiv2024

Tuning the band topology and topological Hall effect in skyrmion crystals via the spin-orbit coupling

The topological Hall effect is the result of spin-asymmetric deflection of charge carriers flowing through a non-collinear spin system. Effective manipulation of the topological Hall conductivity (THC) in skyrmions is currently a vigorous area of research with an eye towards potential spintronics application. Here, we show that the band topology and the THC in a skyrmion crystal can be tuned by changing the strength of the Rashba spin-orbit coupling (SOC), which can be accomplished via a perpendicular electric field. This results in the change of the subband Chern numbers and a transition between ordinary insulator and Chern insulator as the Rashba SOC is varied. For partially filled subbands, the Rashba SOC can tune the THC and reverse its sign, so that the direction of the Hall current is flipped. The critical Rashba strength for this depends on the skyrmion type and the carrier density. We extend our analysis to the cases of Dresselhaus and Weyl SOC as well, and show that they can be directly mapped to the Rashba SOC case and therefore lead to similar results. Our work opens up the scope to go beyond the existing avenues for the control of charge transport in skyrmion crystals.

cond-mat.mtrl-sci↗

arXiv2024

Emergence of giant orbital Hall and tunable spin Hall effects in centrosymmetric TMDs

We demonstrate the formation of orbital and spin Hall effects (OHE/SHE) in the 1T phase of non-magnetic transition metal dichalcogenides. With the aid of density functional theory calculations and model Hamiltonian studies on MX$_2$ (M = Pt, Pd and X = S, Se, and Te), we show an intrinsic orbital Hall conductivity ($\sim 10^3 \hbar /e\ \Omega^{-1}cm^{-1}$) , which primarily emerges due to the orbital texture around the valleys in the momentum space. The robust spin-orbit coupling in these systems induces a sizable SHE out of OHE. Furthermore, to resemble the typical experimental setups, where the magnetic overlayers produce a proximity magnetic field, we examine the effect of magnetic field on OHE and SHE and showed that the latter can be doubled in these class of compounds. With a giant OHE and tunable SHE, the 1T-TMDs are promising candidates for spin and orbital driven quantum devices such as SOT-MRAM, spin nano-oscillators, spin logic devices etc., and to carry out spin-charge conversion experiments for fundamental research.

cond-mat.mes-hall↗

arXiv2023

Effective tight-binding Hamiltonian for the low-energy electronic structure of the Cu-doped lead apatite and the parent compound

We examine the origin of the formation of narrow bands in LK-99 (Pb$_{9}$Cu(PO$_4$)$_6$O) and the parent compound without the Cu doping using density functional theory calculations and model Hamiltonian studies. Explicit analytical expressions are given for a nearest-neighbor tight-binding (TB) Hamiltonian in the momentum space for both the parent and the LK-99 compound, which can serve as an effective model to study various quantum phenomena including superconductivity. The parent material is an insulator with the buckle oxygen atom on the stacked triangular lattice forming the topmost bands, well-separated from the remaining oxygen band manifold. The $C_3$ symmetry-driven two-band TB model describes these two bands quite well. These bands survive in the Cu-doped, LK-99, though with drastically altered band dispersion due to the Cu-O interaction. A similar two-band model involving the Cu $xz$ and $yz$ orbitals broadly describes the top two valence bands of LK-99. However, the band dispersions of both the Cu and O bands are much better described by the four-band TB model incorporating the Cu-O interactions on the buckled honeycomb lattice. We comment on the possible mechanisms of superconductivity in LK-99. even though the actual T$_c$ may be much smaller than reported, and suggest that interstitial Cu clusters leading to broad bands might have a role to play

cond-mat.supr-con↗

arXiv2023

Magnetic Proximity induced efficient charge-to-spin conversion in large area PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructures

As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe$_2$, a transition-metal dichalcogenide, is a promising material for several applications from optoelectric to sensors. However, its potential for spintronics applications is yet to be explored. In this work, we demonstrate that PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructure can generate a large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe$_{2}$. The efficiency of charge-to-spin conversion is found to be $(-0.1 \pm 0.02)$~nm$^{-1}$ in PtSe$_{2}$/Ni$_{80}$Fe$_{20}$, which is three times that of the control sample, Ni$_{80}$Fe$_{20}$/Pt. Our band structure calculations show that the SOT due to the PtSe$_2$ arises from an unexpectedly large spin splitting in the interfacial region of PtSe$_2$ introduced by the proximity magnetic field of the Ni$_{80}$Fe$_{20}$ layer. Our results open up the possibilities of using large-area PtSe$_{2}$ for energy-efficient nanoscale devices by utilizing the proximity-induced SOT.

cond-mat.mtrl-sci↗

arXiv2023

Electron confinement in chain-doped TMDs: A platform for spin-orbit coupled 1D physics

The state-of-the-art defect engineering techniques have paved the way to realize novel quantum phases out of pristine materials. Here, through density-functional calculations and model studies, we show that the chain-doped monolayer transition metal dichalcogenides (TMDs), where M atoms on a single the zigzag chains are replaced by a higher-valence transition-metal element M$^\prime$ (MX$_2$/M$^\prime$), exhibit one-dimensional (1D) bands. These 1D bands, occurring in the fundamental gap of the pristine material, are dispersive along the doped chain but are strongly confined along the lateral direction. This confinement occurs as the bare potential of the dopant chain formed by the positively charged M$^\prime$ ions resembles the potential well of a uniformly charged wire. These bands could show novel 1D physics, including a new type of Tomonaga-Luttinger liquid behavior, multi-orbital Mott insulator physics, and an unusual optical absorption, due to the simultaneous presence of the spin-orbit coupling, strong correlation, multiple orbitals, Rashba spin splitting, and broken symmetry. For the half-filled 1D bands, we find, quite surprisingly, a broadening of the 1D bands due to correlation, as opposed to the expected band narrowing. This is interpreted to be due to multiple orbitals forming the single Hubbard band at different points of the Brillouin zone. Furthermore, due to the presence of an intrinsic electric field along the lateral direction, the 1D bands are Rashba spin-split and provide a new mechanism for tuning the valley dependent optical transitions.

cond-mat.str-el↗

arXiv2020

Orbital gyrotropic magneto-electric effect and its strain engineering in monolayer Nb$X_2$

Electrical control of the orbital degrees of freedom is an important area of research in the emerging field of "orbitronics." Orbital {\it gyrotropic} magneto-electric effect (OGME) is the generation of an orbital magnetization in a nonmagnetic metal by an applied electric field. Here, we show that strain induces a large GME in the monolayer Nb$X_2$ ($X =$ S, Se) normal to the plane, primarily driven by the orbital moments of the Bloch bands as opposed to the conventional spin magnetization, without any need for spin-orbit coupling. The key physics is captured within an effective two-band valley-orbital model and it is shown to be driven by three key ingredients: the intrinsic valley orbital moment, broken $C_{3z}$ symmetry, and strain-induced Fermi surface changes. The effect can be furthermore switched by changing the strain condition, with potential for future device applications.

cond-mat.mes-hall↗

arXiv2020

Intrinsic orbital and spin Hall effects in monolayer transition metal dichalcogenides

Orbital Hall effect (OHE) is the phenomenon of transverse flow of orbital moment in presence of an applied electric field. Solids with broken inversion symmetry are expected to exhibit a strong OHE due to the presence of an intrinsic orbital moment at individual momentum points in the Brillouin zone, which in presence of an applied electric field, flows in different directions causing a net orbital Hall current. Here we provide a comprehensive understanding of the effect and its tunability in the monolayer 2D transition metal dichalcogenides (TMDCs). Both metallic and insulating TMDCs are investigated from full density-functional calculations, effective $d$-band tight-binding models, as well as a minimal four-band model for the valley points that captures the key physics of the system. For the tuning of the OHE, we examine the role of hole doping as well as the change in the band parameters, which, e. g., can be controlled by strain. We demonstrate that the OHE is a more fundamental effect than the spin Hall effect (SHE), with the momentum-space orbital moments inducing a spin moment in the presence of the spin-orbit coupling, leading to the SHE. The physics of the OHE, described here, is relevant for 2D materials with broken inversion symmetry in general, even beyond the TMDCs, providing a broad platform for future research.

cond-mat.mes-hall↗

arXiv2020

Magnetic Skyrmions in Condensed Matter Physics

Skyrmions were originally introduced in Particle Physics as a possible mechanism to explain the stability of particles. Lately the concept has been applied in Condensed Matter Physics to describe the newly discovered topologically protected magnetic configurations called the magnetic Skyrmions. This elementary review introduces the concept at a level suitable for beginning students of Physics.

cond-mat.mes-hall↗

arXiv2020

Intrinsic orbital moment and prediction of a large orbital Hall effect in the 2D transition metal dichalcogenides

Carrying information using generation and detection of the orbital current, instead of the spin current, is an emerging field of research, where the orbital Hall effect (OHE) is an important ingredient. Here, we propose a new mechanism of the OHE that occurs in {\it non-}centrosymmetric materials. We show that the broken inversion symmetry in the 2D transition metal dichalcogenides (TMDCs) causes a robust orbital moment, which flow in different directions due to the opposite Berry curvatures under an applied electric field, leading to a large OHE. This is in complete contrast to the inversion-symmetric systems, where the orbital moment is induced only by the external electric field. We show that the valley-orbital locking as well as the OHE both appear even in the absence of the spin-orbit coupling. The non-zero spin-orbit coupling leads to the well-known valley-spin locking and the spin Hall effect, which we find to be weak, making the TMDCs particularly suitable for direct observation of the OHE, with potential application in {\it orbitronics}.

cond-mat.mtrl-sci↗

arXiv2019

Two dimensional electron gas in the $\delta$-doped iridates with strong spin-orbit coupling: La$_\delta$Sr$_2$IrO$_4$

Iridates are of considerable current interest because of the strong spin-orbit coupling that leads to a variety of new phenomena. Using density-functional studies, we predict the formation of a spin-orbital entangled two-dimensional electron gas (2DEG) in the $\delta$-doped iridate La$_\delta$Sr$_2$IrO$_4$, where a single SrO layer is replaced by a LaO layer. The extra La electron resides close to the $\delta$-doped layer, partially occupying the $J_{\rm eff}= 1/2 $ upper Hubbard band and thereby making the interface metallic. The magnetic structure of the bulk is destroyed near the interface, with the Ir$_0$ layer closest to the interface becoming non-magnetic, while the next layer (Ir$_1$) continues to maintain the AFM structure of the bulk, but with a reduced magnetic moment. The Fermi surface consists of a hole pocket and an electron pocket, located in two different Ir layers (Ir$_0$ and Ir$_1$), with both carriers derived from the $J_{\rm eff}= 1/2 $ upper Hubbard band. The presence of both electrons and holes at the $\delta$-doped interface suggests unusual transport properties, leading to possible device applications.

cond-mat.mtrl-sci↗

arXiv2018

Electric field tuning of the anomalous Hall effect at oxide interfaces

We show that the anomalous Hall effect (AHE) at a magnetic interface with strong spin-orbit coupling can be tuned with an external electric field. By altering the strength of the inversion symmetry breaking, the electric field changes the Rashba interaction, which in turn modifies the magnitude of the Berry curvature, the central quantity in determining the anomalous Hall conductivity (AHC). The effect is illustrated with a square lattice model, which yields a quadratic dependence of the AHC for small electric fields. Explicit density-functional calculations were performed for the recently grown iridate interface, viz., the (SrIrO$_3$)$_1$/(SrMnO$_3$)$_1$ (001) structure, both with and without an electric field. The effect may be potentially useful in spintronics applications.

cond-mat.str-el↗

arXiv2018

Electronic structure and optical properties of Sr$_2$IrO$_4$ under epitaxial strain

We study the modification of the electronic structure in the strong spin-orbit coupled Sr$_2$IrO$_4$ by epitaxial strain using density functional methods. Structural optimization shows that strain changes the internal structural parameters such as the Ir-O-Ir bond angle, which has an important effect on the band structure. An interesting prediction is the $\Gamma - $X crossover of the valence band maximum with strain, while the conduction minimum at M remains unchanged. This in turn suggests strong strain dependence of the transport properties for the hole doped system, but not when the system is electron-doped. Taking the measured value of the $\Gamma-X$ separation for the unstrained case, we predict the $\Gamma - $X crossover of the valence band maximum to occur for the tensile epitaxial strain $e_{xx} \approx 3\%$. A minimal tight-binding model within the $J_{\rm eff} = 1/2$ subspace is developed to describe the main features of the band structure. The optical absorption spectra under epitaxial strain are computed using density-functional theory, which explains the observed anisotropy in the optical spectra with the polarization of the incident light. We show that the optical transitions between the Ir (d) states, which are dipole forbidden, can be explained in terms of the admixture of Ir (p) orbitals with the Ir (d) bands.

cond-mat.mtrl-sci↗

arXiv2018

Phase-flip bifurcation and synchronous transition in unidirectionally coupled parametrically excited pendula

Phase-flip bifurcation plays an important role in the transition to synchronization state in unidirectionally coupled parametrically excited pendula. In coupled identical system it is the cause of complete synchronization whereas in case of coupled non-identical system it causes desynchronization. In coupled identical systems negativity of conditional Lyapunov exponent is not always sufficient for complete synchronization. In complete synchronization state the largest conditional Lyapunov exponent and the second largest Lyapunov exponent are equal in magnitude and slope.

nlin.CD↗

arXiv2017

Synchronization of Two Diffusively Coupled Chaotic Parametrically Excited nonidentical Pendula

Auxiliary system approach and various nearest neighbor methods are widely used to detect generalized synchronization in non-identical coupled systems. These methods generally give contradictory results. Therefore one method alone is not sufficient to predict correct result. We show in this report that it is necessary to apply multiple methods together to come to a conclusion. These methods show a signature of generalized synchronization in diffusively coupled non-identical chaotic parametric excited pendula. But we finally find it to be the almost synchronization. It is achieved when the second Lyapunov exponent and both the system's transverse Lyapunov exponents are almost equal. The transition from asynchronous state to almost synchronization is through frequency entrainment as coupling constant is increased. Non-identity of the pendula are realized by mismatch in amplitude of parametric forcing. The frequency entrainment regime does not depend on amplitude mismatch whereas onset of almost synchronization increases with increase in mismatch. The systems

nlin.AO↗

arXiv2017

Mott metal-insulator transition in the Doped Hubbard-Holstein model

Motivated by the current interest in the understanding of the Mott insulators away from half filling, observed in many perovskite oxides, we study the Mott metal-insulator transition (MIT) in the doped Hubbard-Holstein model using the Hatree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occur. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration $\delta_c$, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. Our theory provides a framework for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

cond-mat.str-el↗