arXiv subjects

S. Shin

Publications and source records attributed to S. Shin.

At least 127 records · Page 7Linked to original sources

arXiv2009

Fermi surfaces, electron-hole asymmetry and correlation kink in a three-dimensional Fermi liquid LaNiO$_3$

We report the three-dimensional (3-D) momentum-resolved soft x-ray photoemission spectroscopy of the Fermi liquid LaNiO$_3$. The out-of-plane and in-plane cuts of the 3-D electron- and hole-Fermi surfaces (FSs) are observed by energy- and angle- dependent photoemission measurements. The energy bands forming the electron FS suggest an $ω^2$ dependence of the imaginary part of the self-energy and a `correlation kink' at an energy scale of 0.25 eV. In contrast, the bands which form nesting character hole FSs do not show kinks and match local density approximation calculations. The results indicate a momentum-dependent mass renormalization, leading to electron-hole asymmetry in strongly correlated LaNiO$_3$.

cond-mat.str-el↗

arXiv2009

Anomalous State Sandwiched between Fermi Liquid and Charge Ordered Mott-Insulating Phases of Ti4O7

The Magneli phase Ti4O7 exhibits two sharp jumps in resistivity with coupled structural transitions as a function of temperature at Tc1=142 K and Tc2=154 K. We have studied electronic structure changes across the two transitions using 7 eV laser, soft x-ray and hard x-ray (HX) photoemission spectroscopy (PES). Ti 2p-3d resonant PES and HX-PES show a clear metallic Fermi-edge and mixed valency above Tc2. The low temperature phase below Tc1 shows a clear insulating gap of 100 meV. The intermediate phase between Tc1 and Tc2 indicates a pseudogap coexisting with remnant coherent states. HX-PES and complementary calculations have confirmed the coherent screening in the strongly correlated intermediate phase. The results suggest existence of a highly anomalous state sandwiched between the mixed-valent Fermi liquid and charge ordered Mott-insulating phase in Ti4O7.

cond-mat.str-el↗

arXiv2009

Unusual Pseudogap-like Features Observed in Iron Oxypnictide Superconductors

We have performed a temperature-dependent angle-integrated laser photoemission study of iron oxypnictide superconductors LaFeAsO:F and LaFePO:F exhibiting critical transition temperatures (Tc's) of 26 K and 5 K, respectively. We find that high-Tc LaFeAsO:F exhibits a temperature-dependent pseudogap-like feature extending over ~0.1 eV about the Fermi level at 250 K, whereas such a feature is absent in low-Tc LaFePO:F. We also find ~20-meV pseudogap-like features and signatures of superconducting gaps both in LaFeAsO:F and LaFePO:F. We discuss the possible origins of the unusual pseudogap-like features through comparison with the high-Tc cuprates.

cond-mat.supr-con↗

arXiv2008

Relation between Superconducting Gap Minima and Nesting Vector in YNi2B2C

We have performed ultrahigh-resolution angle-resolved photoemission spectroscopy to directly observe the large superconducting (SC) gap anisotropy (GA) of YNi2B2C. The result shows large SC GA with a smooth variation along an intersection of a Fermi surface (FS) around the $Γ$-Z line and nearly isotropic SC gap values for two intersections of FSs around the X-P line but with a point-like non-zero minimum only for one sheet. The point-like SC gap minimum can be connected by the nesting vector reported from band calculations. The results show unexpectedly complicated SC GA of borocarbide superconductors.

cond-mat.supr-con↗

arXiv2008

Combining photoemission and optical spectroscopies for reliable valence determination in YbS and Yb metal

Hard x-ray photoemission and optical spectroscopies have been performed on YbS and Yb metal to determine the precise $f$-electron occupation. A comparison of the photoemission spectra with the energy loss functions in bulk and surface, obtained from optical reflectivity, enables us to distinguish between the energy loss satellite of Yb$^{2+}$ peak and Yb$^{3+}$ multiplet. The results clearly indicate a purely divalent Yb state except for the surface of YbS. We demonstrate that the present method is highly reliable in identifying the electronic structure and the mean valence in $f$-electron systems.

cond-mat.str-el↗

arXiv2008

Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO$_2$

The temperature ($T$) dependent metal-insulator transition (MIT) in VO$_2$ is investigated using bulk sensitive hard x-ray ($\sim$ 8 keV) valence band, core level, and V 2$p-3d$ resonant photoemission spectroscopy (PES). The valence band and core level spectra are compared with full-multiplet cluster model calculations including a coherent screening channel. Across the MIT, V 3$d$ spectral weight transfer from the coherent ($d^1\underbar{\it {C}}$ final) states at Fermi level to the incoherent ($d^{0}+d^1\underbar{\it {L}}$ final) states, corresponding to the lower Hubbard band, lead to gap-formation. The spectral shape changes in V 1$s$ and V 2$p$ core levels as well as the valence band are nicely reproduced from a cluster model calculations, providing electronic structure parameters. Resonant-PES finds that the $d^1\underbar{\it{L}}$ states resonate across the V 2$p-3d$ threshold in addition to the $d^{0}$ and $d^1\underbar{\it {C}}$ states. The results support a Mott-Hubbard transition picture for the first order MIT in VO$_2$.

cond-mat.str-el↗

arXiv2008

Recoil Effect of Photoelectrons in the Fermi-Edge of Simple Metals

High energy resolution photoelectron spectroscopy of conduction electrons in the vicinity of the Fermi-edge in Al and Au at the excitation energy of 880 and 7940 eV was carried out using synchrotron radiation. For the excitation energy of 7940 eV, the observed Fermi energy of Al shows a remarkable shift to higher binding energy as compared with that of Au, with accompanying broadening. This is due to the recoil effect of the emitted photoelectrons. The observed spectra are well reproduced by a simple model of Bloch electrons based on the isotropic Debye model.

cond-mat.other↗

arXiv2008

Remote hole-doping of Mott insulators on the nanometer scale

At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.

cond-mat.str-el↗

arXiv2008

Revisiting the valence-band and core-level photoemission spectra of NiO

We have re-examined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopy (PES). The spectral weight of the lowest energy state found to be enhanced in the bulk sensitive Ni 2p core-level PES. A configuration-interaction model including the bound state screening has shown significant agreement with the core-level spectra, and the off and on-resonance VB spectra. These results identify the lowest energy state in core-level and VB-PES as the Zhang-Rice doublet bound state, consistent with the spin-fermion model and recent ab initio calculation with dynamical mean-field theory (LDA + DMFT).

cond-mat.str-el↗

arXiv2008

Bulk electronic structure of the antiferromagnetic superconducting phase in ErNi2B2C

We have performed temperature (T) - dependent laser-photoemission spectroscopy of antiferromagnetic (AF) superconductor ErNi2B2C to study the electronic-structure evolution reflecting the interplay between antiferromagnetism and superconductivity. The spectra at the superconducting (SC) phase show a very broad spectral shape. T-dependent SC gap shows a sudden deviation from the BCS prediction just below TN. This observation can be well explained by the theoretical model and thus represents characteristic bulk electronic structure of the AF SC phase for the first time.

cond-mat.supr-con↗

arXiv2007

The origin of the anomalously strong influence of out-of-plane disorder on high-Tc superconductivity

The electronic structure of Bi2Sr2-xRxCuOy(R=La, Eu) near the (pi,0) point of the first Brillouin zone was studied by means of angle-resolved photoemission spectroscopy (ARPES). The temperature T* above which the pseudogap structure in the ARPES spectrum disappears was found to have an R dependence that is opposite to that ofthe superconducting transition temperature Tc. This indicates that the pseudogap state is competing with high-Tc superconductivity, and the large Tc suppression observed with increasing the out-of-plane disorder is due to the stabilization of the pseudogap state.

cond-mat.supr-con↗

arXiv2007

Coherent and Incoherent States of Electron-doped SrTiO3

Resonant photoemission at the Ti 2p and O 1s edges on a Nb-doped SrTiO3 thin film revealed that the coherent state (CS) at the Fermi level (EF) had mainly Ti 3d character whereas the incoherent in-gap state (IGS) positioned ~1.5 eV below EF had mixed character of Ti 3d and O 2p states. This indicates that the IGS is formed by a spectral-weight transfer from the CS and subsequent spectral-weight redistribution through d-p hybridization. We discuss the evolution of the excitation spectrum with 3d band filling and rationalize the IGS through a mechanism similar to that proposed by Haldane and Anderson.

cond-mat.str-el↗

arXiv2007

Doping-dependence of nodal quasiparticle properties in high-$T_{\rm c}$ cuprates studied by laser-excited angle-resolved photoemission spectroscopy

We investigate the doping dependent low energy, low temperature ($T$ = 5 K) properties of nodal quasiparticles in the d-wave superconductor Bi$_{2.1}$Sr$_{1.9}$CaCu$_2$O$_{8+δ}$ (Bi2212). By utilizing ultrahigh resolution laser-excited angle-resolved photoemission spectroscopy, we obtain precise band dispersions near $E_{F}$, mean free paths and scattering rates ($Γ$) of quasiparticles. For optimally and overdoped, we obtain very sharp quasiparticle peaks of 8 meV and 6 meV full-width at half-maximum, respectively, in accord with terahertz conductivity. For all doping levels, we find the energy-dependence of $Γ\sim |ω|$, while $Γ$($ω=0$) shows a monotonic increase from overdoping to underdoping. The doping dependence suggests the role of electronic inhomogeneity on the nodal quasiparticle scattering at low temperature (5 K $\lsim 0.07T_{\rm c}$), pronounced in the underdoped region.

cond-mat.supr-con↗

arXiv2007

The influence of out-of-plane disorder on the formation of pseudogap and Fermi arc in Bi2Sr2-xRxCuOy (R=La and Eu)

We found that the length of the Fermi arc decreases with increasing out-of-plane disorder by performing angle resolved photoemission spectroscopy (ARPES) measurements in the superconducting state of optimally doped R=La and Eu samples of Bi2Sr2−xRxCuOy. Since out-of-plane disorder stabilizes the antinodal pseudogap as was shown in our previous study of the normal state, the present results indicate that this antinodal pseudogap persists into the superconducting state and decreases the Fermi arc length. We think that the shrinkage of the Fermi arc reduces the superfluid density, which explains the large suppression of the superconducting transition temperature when out-of-plane disorder is increased.

cond-mat.supr-con↗

arXiv2007

Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers

We have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 Å$. The Mott-Hubbard gap of LVO remained open at the interface, indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$ multilayers. We found that the valence of V in LVO were partially converted from V$^{3+}$ to V$^{4+}$ only at the interface on the top side of the LVO layer and that the amount of V$^{4+}$ increased with LVO layer thickness. We suggest that the electronic reconstruction to eliminate the polarity catastrophe inherent in the polar heterostructure is the origin of the highly asymmetric valence change at the LVO/LAO interfaces.

cond-mat.str-el↗

arXiv2007

Hidden Charge-Density-Wave Order in a Low-Tc Superconductor 2H-NbSe2

The Charge-density-wave(CDW) in 2H-NbSe2(TCDW ~ 33 K), which coexists with superconductivity(Tc = 7.2 K), is investigated using Angle-resolved photoemission spectroscopy as a function of temperature. Across TCDW, energy and momentum(k) distribution curves show changes associated with the primary and secondary CDW vectors. The CDW is due to hidden charge order occurring at specific k-points on Fermi surfaces in the 2-dimensional Brillouin zone(2D BZ) with spectral weight suppression, but no gap formation. The study rules out nesting in the 2D BZ and the van Hove singularity driven CDW transition in 2H-NbSe2.

cond-mat.str-el↗

arXiv2006

Hard X-ray Cu $2p$ Core-Level Photoemission of High-$T_c$ Cuprate Superconductors

We have performed a detailed study of Cu $2p$ core-level spectra in single layer La$_{2-x}$Sr$_{x}$CuO$_{4}$, La doped Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ (Bi2201) and bilayer Bi$_2$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ (Bi2212) high-temperature superconductors by using hard x-ray photoemission (HX-PES). We identify the Cu$^{2+}$ derived (i) the Zhang-Rice singlet (ZRS) feature, (ii) the $d^{n+1}\underline{L}$ (ligand screened) feature, (iii) the $d^{n}$ satellite feature, as well as the hole-doping derived high binding energy feature in the main peak. In Bi-based cuprates, intensities of the $d^{n}$ satellite features seem to be strongly enhanced compared to La$_{2-x}$Sr$_{x}$CuO$_{4}$. From x-ray photon energy dependent measurements, it is shown that the increased intensity in the satellite region is associated with Bi $4s$ core-level spectral intensity. The corrected $d^{n}$ satellite intensity is independent of the doping content or number of Cu-O layers. Our results suggest a correlation of the relative intensity of ZRS feature and hole-doping induced high binding energy spectral changes in the main peak with superconductivity.

cond-mat.str-el↗

arXiv2006

Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges

We investigated the dielectric functions $ε$($ω$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $ε^{b}$($ω$), since these are important scientifically as well as technologically: the $ε_1^{b}$(0) of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain $ε_1^{b}$(0), we measured reflectivity spectra of sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7 meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings to extract $ε_1^{b}$(0) values. Ir, Ru, Pt, and IrO$_2$ produced experimental $ε_1^{b}$(0) values of 48$\pm$10, 82$\pm$10, 58$\pm$10, and 29$\pm$5, respectively, which are in good agreement with values obtained using first-principles calculations. These values are much higher than those for noble metals such as Cu, Ag, and Au because transition metals and IrO$_2$ have such strong d-d transitions below 2.0 eV. High $ε_1^{b}$(0) values will reduce the depolarization field in ferroelectric capacitors, making these materials good candidates for use as electrodes in ferroelectric applications.

cond-mat.str-el↗