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S. Shrestha

Publications and source records attributed to S. Shrestha.

8 recordsLinked to original sources

The MUSE Target Chamber Post Veto

The Muon Scattering Experiment (MUSE) was developed to address the proton radius puzzle through simultaneous electron-proton and muon-proton scattering using the Paul Scherrer Institute's PiM1 secondary beamline. MUSE uses a large-solid-angle, non-magnetic spectrometer to detect beam particles scattering from a liquid hydrogen cell contained within a vacuum chamber. Due to the large scattering windows, the structural integrity of the chamber is supported by posts located at small scattering angles. While out of the acceptance, particles in the tails of the beam distribution can strike these posts, causing a significant trigger background. We describe the design and performance of the Target Chamber Post Veto (TCPV) detector installed inside the vacuum chamber to remove these background events at the trigger level.

physics.ins-det

Studying the Strangeness $D$-Term in Hall C via Exclusive $\phi$ Electroproduction

We propose a measurement of exclusive electroproduction of $\phi$ mesons near threshold in Hall C. We will measure the |t|-dependence of the exclusive $\phi$ electroproduction cross section, which has recently been proposed as an observable sensitive to the strangeness $D$-term. The contribution of strangeness to the total $D$-term is presently unknown, with different arguments favoring $D_s$ being large, being small, or even having opposite sign from the total $D$-term. Our exploratory measurement is designed to distinguish between these hypotheses. If $D_s$ turns out to be small, $\phi$ electroproduction can be used to study the gluon $D$-term. In addition, this dataset will allow us to perform measurements of other exclusive meson final states, including the first measurement of $\eta'$ electroproduction and multi-differential measurements of $\eta$ and $\omega$ electroproduction.

nucl-ex

Investigations of Graphene on SrTiO3 Single-Crystal using Confocal Raman Spectroscopy

Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samples that were synthesized by different techniques. This confocal Raman spectroscopic approach can shed light on the investigation of not only this graphene/SrTiO3 system but also various two-dimensional layered materials whose Raman modes interfere with their substrates.

cond-mat.mtrl-sci

Emergent interlayer magnetic order via strain-induced orthorhombic distortion in the 5d Mott insulator Sr2IrO4

We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant X-ray scattering experiments, we observed an antiferromagnetic order in the orthorhombic Sr2IrO4 film whose interlayer stacking pattern is inverted from that of the tetragonal Sr2IrO4 crystal. This interlayer stacking is similar to that of the orthorhombic La2CuO4, implying that the asymmetric interlayer exchange interaction along a and b-directions exceeds the anisotropic interlayer pseudo-dipolar interaction. Our result suggests that strain-induced distortion can provide a delicate knob for tuning the long-range magnetic order in quasi-two-dimensional systems by evoking the competition between the interlayer exchange coupling and the pseudo-dipolar interaction.

cond-mat.str-el

Technical design of the phase I Mu3e experiment

The Mu3e experiment aims to find or exclude the lepton flavour violating decay $μ\rightarrow eee$ at branching fractions above $10^{-16}$. A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of $2\cdot 10^{-15}$. We present an overview of all aspects of the technical design and expected performance of the phase~I Mu3e detector. The high rate of up to $10^{8}$ muon decays per second and the low momenta of the decay electrons and positrons pose a unique set of challenges, which we tackle using an ultra thin tracking detector based on high-voltage monolithic active pixel sensors combined with scintillating fibres and tiles for precise timing measurements.

physics.ins-det

Higgs boson potential at colliders: status and perspectives

This document summarises the current theoretical and experimental status of the di-Higgs boson production searches, and of the direct and indirect constraints on the Higgs boson self-coupling, with the wish to serve as a useful guide for the next years. The document discusses the theoretical status, including state-of-the-art predictions for di-Higgs cross sections, developments on the effective field theory approach, and studies on specific new physics scenarios that can show up in the di-Higgs final state. The status of di-Higgs searches and the direct and indirect constraints on the Higgs self-coupling at the LHC are presented, with an overview of the relevant experimental techniques, and covering all the variety of relevant signatures. Finally, the capabilities of future colliders in determining the Higgs self-coupling are addressed, comparing the projected precision that can be obtained in such facilities. The work has started as the proceedings of the Di-Higgs workshop at Colliders, held at Fermilab from the 4th to the 9th of September 2018, but it went beyond the topics discussed at that workshop and included further developments.

hep-ph

MuPix7 - A fast monolithic HV-CMOS pixel chip for Mu3e

The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 μm. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 μm^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.

physics.ins-det

Electrical Properties of Conductive Ge Nanocrystal Thin Films Fabricated by Low Temperature In-situ Growth

Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional doping from shallow dopants was excluded as a candidate mechanism of hole generation. Instead, the p-type characteristic was attributed to surface state induced hole accumulation in NCs, and the hole conduction was found to be a thermally activated process involving charge hopping from one NC to its nearest neighbor. Theoretical analysis has shown that the density of surface states in Ge-NCs is sufficient to induce adequate holes for measured conductivity. The film conductivity can be improved significantly by post-growth rapid thermal annealing and this effect is explained by a simple thermodynamic model. The impact of impurities on the conduction properties was also studied. Neither compensation nor enhancement in conduction was observed in the Sb and Ga doped Ge-NCs TFs, respectively. This could be attributed to the fact that these impurities are no longer shallow dopants in NCs and are much less likely to be effectively activated. Finally, the photovoltaic effect of heterojunction diodes employing such Ge-NCs TFs was characterized in order to demonstrate its functionality in device implementation.

cond-mat.mtrl-sci