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S. Tarucha

Publications and source records attributed to S. Tarucha.

At least 73 records · Page 4Linked to original sources

Two level anti-crossings high up in the single-particle energy spectrum of a quantum dot

We study the evolution with magnetic field of the single-particle energy levels high up in the energy spectrum of one dot as probed by the ground state of the adjacent dot in a weakly coupled vertical quantum dot molecule. We find that the observed spectrum is generally well accounted for by the calculated spectrum for a two-dimensional elliptical parabolic confining potential, except in several regions where two or more single-particle levels approach each other. We focus on two two-level crossing regions which show unexpected anti-crossing behavior and contrasting current dependences. Within a simple coherent level mixing picture, we can model the current carried through the coupled states of the probed dot provided the intrinsic variation with magnetic field of the current through the states (as if they were uncoupled) is accounted for by an appropriate interpolation scheme.

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Electron spin manipulation and resonator readout in a double quantum dot nano-electromechanical system

Magnetically coupling a nano-mechanical resonator to a double quantum dot confining two electrons can enable the manipulation of a single electron spin and the readout of the resonator's natural frequency. When the Larmor frequency matches the resonator frequency, the electron spin in one of the dots can be selectively flipped by the magnetised resonator. By simultaneously measuring the charge state of the two-electron double quantum dots, this transition can be detected thus enabling the natural frequency of the mechanical resonator to be determined.

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Many-body excitations in tunneling current spectra of a few-electron quantum dot

Inherent asymmetry in the tunneling barriers of few-electron quantum dots induces intrinsically different tunneling currents for forward and reverse source-drain biases in the non-linear transport regime. Here we show that in addition to spin selection rules, overlap matrix elements between many-body states are crucial for the correct description of tunneling transmission through quantum dots at large magnetic fields. Signatures of excited (N-1)-electron states in the transport process through the N-electron system are clearly identified in the measured transconductances. Our analysis clearly confirms the validity of single-electron quantum transport theory in quantum dots.

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Large nuclear Overhauser fields detected in vertically-coupled double quantum dots

We report the electrical induction and detection of dynamic nuclear polarization in the spin-blockade regime of double GaAs vertical quantum dots. The largest Overhauser field observed was about 4 Tesla, corresponding to a nuclear polarization of about 40% in the present device. A phenomenological model is presented to provide a qualitative understanding of our results.

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Spins in few-electron quantum dots

This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements. Furthermore, experimental techniques are discussed that allow for: (1) the rotation of an electron spin into a superposition of up and down, (2) the measurement of the quantum state of an individual spin and (3) the control of the interaction between two neighbouring spins by the Heisenberg exchange interaction. Finally, the physics of the relevant relaxation and dephasing mechanisms is reviewed and experimental results are compared with theories for spin-orbit and hyperfine interactions. All these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins (i.e. single-spintronics).

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Noise Correlations in a Coulomb Blockaded Quantum Dot

We report measurements of current noise auto- and cross-correlation in a tunable quantum dot with two or three leads. As the Coulomb blockade is lifted at finite source-drain bias, the auto-correlation evolves from super-Poissonian to sub-Poissonian in the two-lead case, and the cross-correlation evolves from positive to negative in the three-lead case, consistent with transport through multiple levels. Cross-correlations in the three-lead dot are found to be proportional to the noise in excess of the Poissonian value in the limit of weak output tunneling.

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Micro-magnets for coherent control of spin-charge qubit in lateral quantum dots

A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-level system, which involves hybridization of a single electron spin to the quantum dot's orbitals. Operation speed and gate fidelity are related to device parameters. Sub 100 ns $π$ pulse duration can be achieved with lattice fluctuations coherence time of 4 ms for GaAs.

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Intermediate Low Spin States in a Few-electron Quantum Dot in the $ν\le 1$ Regime

We study the effects of electron-electron interactions in a circular few-electron vertical quantum dot in such a strong magnetic field that the filling factor $ν\le 1$. We measure excitation spectra and find ground state transitions beyond the maximum density droplet ($ν=1$) region. We compare the observed spectra with those calculated by exact diagonalization to identify the ground state quantum numbers, and find that intermediate low-spin states occur between adjacent spin-polarized magic number states.

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Electronic Structure of Multiple Dots

We calculate, via spin density functional theory (SDFT) and exact diagonalization, the eigenstates for electrons in a variety of external potentials, including double and triple dots. The SDFT calculations employ realistic wafer profiles and gate geometries and also serve as the basis for the exact diagonalization calculations. The exchange interaction J between electrons is the difference between singlet and triplet ground state energies and reflects competition between tunneling and the exchange matrix element, both of which result from overlap in the barrier. For double dots, a characteristic transition from singlet ground state to triplet ground state (positive to negative J) is calculated. For the triple dot geometry with 2 electrons we also find the electronic structure with exact diagonalization. For larger electron number (18 and 20) we use only SDFT. In contrast to the double dot case, the triple dot case shows a quasi-periodic fluctuation of J with magnetic field which we attribute to periodic variations of the basis states in response to changing flux quanta threading the triple dot structure.

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Few-electron molecular states and their transitions in a single InAs quantum dot molecule

We study electronic configurations in a single pair of vertically coupled self-assembled InAs quantum dots, holding just a few electrons. By comparing the experimental data of non-linear single-electron transport spectra in a magnetic field with many-body calculations, we identify the spin and orbital configurations to confirm the formation of molecular states by filling both the quantum mechanically coupled symmetric and anti-symmetric states. Filling of the anti-symmetric states is less favored with increasing magnetic field, and this leads to various magnetic field induced transitions in the molecular states.

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Spin configurations in circular and rectangular vertical quantum dots in a magnetic field: Three-dimensional self-consistent simulation

The magnetic field dependence of the electronic properties of \textit{real} single vertical quantum dots in circular and rectangular mesas is investigated within a full three-dimensional multiscale self-consistent approach without any {\it á priori} assumptions about the shape and strength of the confinement potential. The calculated zero field electron addition energies are in good agreement with available experimental data for both mesa geometries. Charging diagrams in a magnetic field for number of electrons up to five are also computed. Consistent with the experimental data, we found that the charging curves for the rectangular mesa dot in a magnetic field are flatter and exhibit less features than for a circular mesa dot. Evolution of the singlet-triplet energy separation in the two electron system for both dot geometries in magnetic field was also investigated. In the limit of large field, beyond the singlet-triplet transition, the singlet-triplet energy difference continues to become more negative in a circular mesa dot without any saturation within the range of considered magnetic fields whilst it is predicted to asymptotically approach zero for the rectangular mesa dot. This different behavior is attributed to the symmetry "breaking" that occurs in the singlet wave-functions in the rectangular mesa dot but not in the circular one.

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Single-dot spectroscopy via elastic single-electron tunneling through a pair of coupled quantum dots

We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage behavior provides electronic addition energies exactly as the linear, Coulomb blockade oscillation does. By analyzing it, we identify the s and p shell addition spectrum for up to six electrons in the single InAs dot, i.e. one of the coupled dots. The evolution of shell addition spectrum with magnetic field provides Fock-Darwin spectra of s and p shell.

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Molecular states observed in a single pair of strongly coupled self-assembled InAs quantum dots

Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We observe a series of well-formed Coulomb diamonds with charging energy of less than 5 meV, which are much smaller than those reported previously. This is because electrons are occupied in molecular states, which are spread over both dots and occupy a large volume. In the measurement of ground and excited state single electron transport spectra with magnetic field, we find that the electrons are sequentially trapped in symmetric and anti-symmetric states. This result is well-explained by numerical calculation using an exact diagonalization method.

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Molecular phases in coupled quantum dots

We present excitation energy spectra of few-electron vertically coupled quantum dots for strong and intermediate inter-dot coupling. By applying a magnetic field, we induce ground state transitions and identify the corresponding quantum numbers by comparison with few-body calculations. In addition to atomic-like states, we find novel "molecular-like" phases. The isospin index characterizes the nature of the bond of the artificial molecule and this we control. Like spin in a single quantum dot, transitions in isospin leading to full polarization are observed with increasing magnetic field.

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Magnetically induced chessboard pattern in the conductance of a Kondo quantum dot

We quantitatively describe the main features of the magnetically induced conductance modulation of a Kondo quantum dot -- or chessboard pattern -- in terms of a constant-interaction double quantum dot model. We show that the analogy with a double dot holds down to remarkably low magnetic fields. The analysis is extended by full 3D spin density functional calculations. Introducing an effective Kondo coupling parameter, the chessboard pattern is self-consistently computed as a function of magnetic field and electron number, which enables us to quantitatively explain our experimental data.

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Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out

We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of the double quantum dot and serve as charge detectors. These enable determination of the number of conduction electrons on each dot. This number can be reduced to zero while still allowing transport measurements through the double dot. Microwave radiation is used to pump an electron from one dot to the other by absorption of a single photon. The experiments demonstrate that this quantum dot circuit can serve as a good starting point for a scalable spin-qubit system.

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A vertical diatomic artificial molecule in the intermediate coupling regime in a parallel and perpendicular magnetic field

We present experimental results for the ground state electrochemical potentials of a few electron semiconductor artificial molecule made by vertically coupling two quantum dots, in the intermediate coupling regime, in perpendicular and parallel magnetic fields up to 5 T. We perform a quantitative analysis based on local-spin density functional theory. The agreement between theoretical and experimental results is good, and the phase transitions are well reproduced.

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Electron transport through double quantum dots

Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show that the double dot geometry allows for an accurate determination of the intrinsic lifetime of discrete energy states in quantum dots. The evolution of discrete energy levels in magnetic field is studied. The resolution allows to resolve avoided crossings in the spectrum of a quantum dot. With microwave spectroscopy it is possible to probe the transition from ionic bonding (for weak inter-dot tunnel coupling) to covalent bonding (for strong inter-dot tunnel coupling) in a double dot artificial molecule. This review on the present experimental status of double quantum dot studies is motivated by their relevance for realizing solid state quantum bits.

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