arXiv subjects

S. Thirupathaiah

Publications and source records attributed to S. Thirupathaiah.

At least 19 recordsLinked to original sources

arXiv2025

Pressure induced ferromagnetic to antiferromagnetic phase transition in transition metal chalcogenide Cr$_{3}$Te$_4$

We have carried out a detailed high-pressure investigation on the strongly correlated transition metal chalcogenide $Cr_{3}Te_4$ using Raman spectroscopy and XRD, which is ferromagnetic and metallic at ambient conditions. We find that the monoclinic structure remains stable up to 30 GPa, the highest pressure studied. The Cr-Te bond length and octahedral volume decrease drastically up to 7.6 GPa pressure. The $A_{1g}$ Raman mode shows a red shift up to 7.6 GPa, and the $E_g$ Raman mode shows a sudden drop around the same pressure. Further low-temperature Raman spectroscopic investigation shows that the Raman modes soften at the ferromagnetic to antiferromagnetic phase transition. This suggests a change in the magnetic ordering at high pressure. Our Density Functional Theory (DFT) calculations reveal the change in magnetic ground state from ferromagnetic state to antiferromagnetic state above 7.6 GPa pressure, corroborating our experimental result.

cond-mat.str-el↗

arXiv2025

Anomalous Lattice Effect Originated Metal-Insulator Transition in FeSe$_x$

We present a comprehensive investigation of the structural, electrical transport, and magnetic properties of FeSe$_{\it{x}}$ ($\it{x}$ = 1.14, 1.18, 1.23, 1.28, and 1.32) to unravel the mechanism of the metal-insulator transition observed in these systems. For this, we systematically evaluated the structural parameters of FeSe$_{\it{x}}$ as a function of Se concentration and temperature. We observe increased lattice constants and cell volume with increased Se concentration. On the other hand, the temperature-dependent XRD studies suggest unusual lattice change around the metal-insulator (MI) transition temperature of the respective compositions. This remarkable observation suggests that the anomalous lattice effect originates the MI transition in these systems. Additionally, our density of states (DOS) calculations on FeSe$_{1.14}$ qualitatively explain the MI transition, as the low-temperature (50 K) structure DOS suggests a metallic nature and the high-temperature (300 K) structure DOS shows a gap near the Fermi level.

cond-mat.str-el↗

arXiv2024

Experimental and Computational Insights Into the Magnetic Anisotropy and Magnetic Behaviour of Layered Room-Temperature Ferromagnet Cr$_{1.38}$Te$_2$

We investigate the structural, magnetocrystalline anisotropy, critical behaviour, and magnetocaloric effect in the layered room-temperature monoclinic ferromagnet Cr$_{1.38}$Te$_2$. The critical behavior is studied by employing various techniques such as the modified Arrott plot (MAP), the Kouvel-Fisher method (KF), and the critical isothermal analysis (CI) around the Curie temperature ($T_C$) of 316 K. The derived critical exponents are self-consistent and obey the rescaling analysis. The Monte-Carlo simulations reproduce the experimentally obtained critical exponents. However, the derived critical exponents do not suggest any single universality class of the magnetic interactions. On the other hand, the renormalization group (RG) theory suggests 3D-Ising type long-range exchange interactions [$J(r)$], decaying with distance ($r$) as $J (r) = r^{-(d+σ)}= r^{-4.73}$. Further, magnetocrystalline anisotropy energy density (K$_u$) is found to be temperature dependent. The ground state magnetic easy-axis ($b$-axis) is identified by analyzing the magnetocrystalline anisotropy energy (MAE) using the density functional theory calculations. Maximum entropy change -$ΔS_{m}^{max}$$\approx$2.51 J/kg-K is found near the $T_C$.

cond-mat.mtrl-sci↗

arXiv2024

Intricate magnetic interactions and topological Hall effect observed in itinerant room-temperature layered ferromagnet Cr0.83Te

We report the magnetic, electrical, and magnetotransport (Hall effect) properties of the hexagonal itinerant ferromagnet Cr$_{0.83}$Te. Further, a comprehensive study of the magneto-entropy scaling behavior has been done around the Curie temperature of $T_C \approx$ 338 K. A maximum entropy change (-$ΔS_{m}^{max}$) of 2.77 $J/kg-K$ and relative cooling power (RCP) of 88.29 $J/kg$ near the T$_C$ have been achieved under an applied magnetic field of 5 Tesla. The critical exponents, $β$ = 0.4739(4), $γ$ = 1.2812(3), and $δ$ = 3.7037(5), have been extracted using the magneto-entropy scaling analysis. The obtained critical exponents indicate the presence of intricate magnetic interactions in Cr$_{0.83}$Te. On the other hand, the magnetotransport study reveals a topological Hall effect attributed to the noncoplanar spin structure coexisting with a robust magnetocrystalline anisotropy. Further, we observe that the extrinsic skew-scattering mechanism originated anomalous Hall effect. Our experimental findings of the anomalous and topological Hall effect properties in the presence of intriguing high-temperature itinerant ferromagnetism and magnetocaloric effect in Cr$_{0.83}$Te can offer potential technological applications at room temperature.

cond-mat.mtrl-sci↗

arXiv2023

Comparative study of Kondo effect in Vanadium dichalcogenides VX$_2$ (X=Se & Te)

We report on the electrical transport, magnetotransport, and magnetic properties studies on the transition metal dichalcogenides VSe$_2$ and VTe$_2$ and draw a comprehensive comparison between them. We observe Kondo effect in both systems induced by the exchange interaction between localized moments and conduction electrons at low temperature, resulting into resistance upturn at 6 K for VSe$_2$ and 17 K for VTe$_2$. From the field dependent resistance measurements we find that the data is fitted best with modified Hamann equation corrected by the quantum Brillouin function for VSe$_2$, while the data is fitted best with modified Hamann equation corrected by the classical Langevin function for VTe$_2$. Interestingly, we observe a contrasting magnetoresistance (MR) property between these systems across the Kondo temperature. That means, negative MR is found in both systems in the Kondo state. In the normal state MR is positive for VSe$_2$, while it is negligible for VTe$_2$. In addition, both systems show weak ferromagnetism at low temperature due to intercalated V atoms.

cond-mat.mtrl-sci↗

arXiv2023

Investigation of the Anomalous and Topological Hall Effects in Layered Monoclinic Ferromagnet Cr$_{2.76}$Te$_4$

We studied the electrical transport, Hall effect, and magnetic properties of monoclinic layered ferromagnet Cr$_{2.76}$Te$_4$. Our studies demonstrate Cr$_{2.76}$Te$_4$ to be a soft ferromagnet with strong magnetocrystalline anisotropy. Below 50 K, the system shows an antiferromagnetic-like transition. Interestingly, between 50 and 150 K, we observe fluctuating magnetic moments between in-plane and out-of-plane orientations, leading to non-coplanar spin structure. On the other hand, the electrical resistivity data suggest it to be metallic throughout the measured temperature range, except a $kink$ at around 50 K due to AFM ordering. The Rhodes-Wohlfarth ratio $\frac{μ_{eff}}{μ_{s}}=1.89 (>1)$ calculated from our magnetic studies confirms that Cr$_{2.76}$Te$_4$ is an itinerant ferromagnet. Large anomalous Hall effect has been observed due to the skew-scattering of impurities and the topological Hall effect has been observed due to non-coplanar spin-structure in the presence of strong magnetocrystalline anisotropy. We examined the mechanism of anomalous Hall effect by employing the first principles calculations.

cond-mat.mtrl-sci↗

arXiv2023

Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal

The compound V$_5$S$_8$ can also be represented by V$_{1.25}$S$_2$, a transition metal dichalcogenide (TMDC) with excess V. Very few TMDCs show magnetism and/or Kondo effect. Among them, the sister compounds VSe$_2$ and VTe$_2$ are recently proved to show ferromagnetism in addition to the low-temperature resistivity upturn due to Kondo effect. In this study, we show Kondo effect in V$_5$S$_8$ originated from the antiferromagnetic exchange interactions among the intercalated V atoms below the N$\acute{e}$el ($T_N$) temperature of 27 K. We find isotropic magnetic properties above $T_N$, while a strong magnetic anisotropy is noticed below $T_N$. In addition, below $T_N$ we find an out-of-plane ($H\parallel c$) spin-flop transition triggered at a critical field of 3.5 T that is absent from the in-plane ($H\perp c$). Angle-dependent magnetoresistance is found to be highly anisotropic in the antiferromagnetic state.

cond-mat.str-el↗

arXiv2022

Tuning of topological properties in the strongly correlated antiferromagnet Mn$_3$Sn via Fe doping

Magnetic topological materials, in which strong correlations between magnetic and electronic properties of matter, give rise to various exotic phenomena such as anomalous Hall effect (AHE), topological Hall effect (THE), and skyrmion lattice. Here, we report on the electronic, magnetic, and topological properties of Mn$_{3-\it{x}}$Fe$_{\it{x}}$Sn single crystals ($\it{x}$=0, 0.25, and 0.35). Low temperature magnetic properties have been significantly changed with Fe doping. Most importantly, we observe that large uniaxial magnetocrystalline anisotropy that is induced by the Fe doping in combination with competing magnetic interactions at low temperature produce nontrivial spin-texture, leading to large topological Hall effect in the doped systems at low temperatures. Our studies further show that the topological properties of Mn$_{3-\it{x}}$Fe$_{\it{x}}$Sn are very sensitive to the Fe doping.

cond-mat.mtrl-sci↗

arXiv2022

Magnetocrystalline Anisotropy and Magnetocaloric Effect Studies on the Room-temperature 2D Ferromagnetic Cr$_4$Te$_5$

We present a thorough study on the magnetoanisotropic properties and magnetocaloric effect in the layered ferromagnetic Cr$_4$Te$_5$ single crystals by performing the critical behaviour analysis of magnetization isotherms. The critical exponents $β$=0.485(3), $γ$=1.202(5), and $δ$=3.52(3) with a Curie temperature of $T_C \approx 340.73(4)$ K are determined by the modified Arrott plots. We observe a large magnetocrystalline anisotropy K$_u$=330 kJ/$m^3$ at 3 K which gradually decreases with increasing temperature. Maximum entropy change -$ΔS_{M}^{max}$ and the relative cooling power (RCP) are found to be 2.77 $J/kg-K$ and 88.29 $J/kg$, respectively near $T_C$ when the magnetic field applied parallel to $\it{ab}$-plane. Rescaled -$ΔS_M (T, H)$ data measured at various temperatures and fields collapse into a single universal curve, confirming the second order magnetic transition in this system. Following the renormalization group theory analysis, we find that the spin-coupling is of 3D Heisenberg-type, $\{d:n\}=\{3:3\}$, with long-range exchange interactions decaying as $J (r) = r^{-(d+σ)}= r^{-4.71}$.

cond-mat.mtrl-sci↗

arXiv2022

Effect on the Electronic and Magnetic Properties of Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ with Sn Doping

We thoroughly investigate the effect of nonmagnetic Sn doping on the electronic and magnetic properties of antiferromagnetic topological insulator MnBi$_2$Te$_4$. We observe that Sn doping reduces the out-of-plane antiferromagnetic (AFM) interactions in MnBi$_2$Te$_4$ up to 68\% of Sn concentration and above the system is found to be paramagnetic. In this way, the anomalous Hall effect observed at a very high field of 7.8 T in MnBi$_2$Te$_4$ is reduced to 2 T with 68\% of Sn doping. Electrical transport measurements suggest that all compositions are metallic in nature, while the low-temperature resistivity is sensitive to the AFM ordering and to the doping-induced disorder. Hall effect study demonstrates that Sn actually dopes electrons into the system, thus, enhancing the electron carrier density almost by two orders at 68\% of Sn. In contrast, SnBi$_2$Te$_4$ is found to be a p-type system. Angle-resolved photoemission spectroscopy (ARPES) studies show that the topological properties are intact at least up to 55\% of Sn as the Dirac surface states are present in the valance band, but in SnBi$_2$Te$_4$ we are unable to detect the topological states due to heavy hole doping. Overall, Sn doping significantly affects the electronic and magnetic properties of MnBi$_2$Te$_4$.

cond-mat.mtrl-sci↗

arXiv2021

Observation of Exchange Bias in Antiferromagnetic Cr$_{0.79}$Se due to the Coexistence of Itinerant Weak Ferromagnetism at Low-temperatures

We report on the structural, electrical transport, and magnetic properties of antiferromagnetic transition-metal monochalcogenide Cr$_{0.79}$Se. Different from the existing off-stoichiometric compositions, Cr$_{0.79}$Se is found to be synthesised into the same NiAs-type hexagonal crystal structure of CrSe. Resistivity data suggest Cr$_{0.79}$Se to be a Fermi-liquid-type metal at low temperatures, while at intermediate temperatures the resistivity depends sublinearly on the temperature. Eventually, at the elevated temperatures the rate of change of resistivity rapidly decreases with increasing temperature. Magnetic measurements suggest a transition from paramagnetic phase to an antiferromagnetic phase at a N$\acute{e}$el temperature of 225 K. Further reduction of the sample temperature results into coexistance of weak ferromagnetism along with the antiferromagnetic phase below 100 K. As a result, below 100 K, we identify significant exchange bias due to the interaction between the ferro- and antiferromagnetic phases. In addition, from the temperature dependent X-ray diffraction measurements we observe that the NiAs-type structure is stable up to as high as 600$^o$C.

cond-mat.mtrl-sci↗

arXiv2021

Sixfold fermion near the Fermi level in cubic PtBi2

We show that the cubic compound PtBi2, is a topological semimetal hosting a sixfold band touching point in close proximity to the Fermi level. Using angle-resolved photoemission spectroscopy, we map the bandstructure of the system, which is in good agreement with results from density functional theory. Further, by employing a low energy effective Hamiltonian valid close to the crossing point, we study the effect of a magnetic field on the sixfold fermion. The latter splits into a total of twenty Weyl cones for a Zeeman field oriented in the diagonal, [111] direction. Our results mark cubic PtBi2, as an ideal candidate to study the transport properties of gapless topological systems beyond Dirac and Weyl semimetals.

cond-mat.mes-hall↗

arXiv2020

Experimental Evidence of Stable 2$H$ Phase on the Surface of Layered 1$T'$-TaTe$_2$

We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that the Fermi surface topology of TaTe$_2$ is quite complicated compared to its isovalent compounds such as TaS$_2$, TaSe$_2$, and isostructural compound NbTe$_2$. More importantly, we discover that the surface electronic structure of 1$T'$-TaTe$_2$ has more resemblance to the 2$H$-TaTe$_2$, while the bulk electronic structure has more resemblance to the hypothetical 1$T$-TaTe$_2$. These experimental observations are thoroughly compared with our DFT calculations performed on 1$T$-, 2$H$- and 2$H$ (monolayer)/1$T$- TaTe$_2$. We further notice that the Fermi surface topology is temperature independent up to 180 K, confirming that the 2$H$ phase on the surface is stable up to 180 K and the CDW order is not due to the Fermi surface nesting.

cond-mat.mtrl-sci↗

arXiv2020

Anomalous band renormalization due to high energy $kink$ in the colossal thermoelectric material K$_{0.65}$RhO$_2$

We report on low-energy electronic structure and electronic correlations of K$_{0.65}$RhO$_2$, studied using high-resolution angle-resolved photoemission spectroscopy (ARPES) technique and density functional theory (DFT) calculations. We observe a highly correlated hole pocket on the Fermi surface. We further notice that the correlations are momentum dependent. Most importantly, two $kinks$ at binding energies of 75 meV and 195 meV have been observed from the band dispersion in the vicinity of the Fermi level. While the low energy $kink$ at 75 meV can be understood as a result of the electron-phonon interaction, the presence of high energy $kink$ at 195 meV is totally a new discovery of this system leading to an anomalous band renormalization. Based on systematic analysis of our experimental data, we propose high frequency bosonic excitations as a plausible origin of the high energy anomaly. Further, we notice that the high energy anomaly has important implications in obtaining the colossal thermoelectric power of K$_{0.65}$RhO$_2$.

cond-mat.str-el↗

arXiv2019

Electronic Structure Studies of FeSi: A Chiral Topological System

Most recent observation of topological Fermi arcs on the surface of manyfold degenerate B20 systems, CoSi and RhSi, have attracted enormous research interests. Although an another isostructural system, FeSi, has been predicted to show bulk chiral fermions, it is yet to be clear theoretically and as well experimentally that whether FeSi possesses the topological surface Fermi arcs associated with the exotic chiral fermions in vicinity of the Fermi level. In this contribution, using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), we present the low-energy electronic structure of FeSi. We further report the surface state calculations to provide insights into the surface band structure of FeSi near the Fermi level. Unlike in CoSi or RhSi, FeSi has no topological Fermi arcs near the Fermi level as confirmed both from ARPES and surface state calculations. Further, the ARPES data show spin-orbit coupling (SOC) band splitting of 40 meV, which is in good agreement with bulk band structure calculations. We noticed an anomalous temperature dependent resistivity in FeSi which can be understood through the electron-phonon interactions as we find a Debye energy of 80 meV from the ARPES data.

cond-mat.mtrl-sci↗

arXiv2019

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX$_2$ (X = Se and Te)

Using angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations we studied the low-energy electronic structure of bulk ZrTe$_2$. ARPES studies on ZrTe$_2$ demonstrate free charge carriers at the Fermi level, which is further confirmed by the DFT calculations. An equal number of hole and electron carrier density estimated from the ARPES data, points ZrTe$_2$ to a semimetal. The DFT calculations further suggest a band inversion between Te $p$ and Zr $d$ states at the $Γ$ point, hinting at the non-trivial band topology in ZrTe$_2$. Thus, our studies for the first time unambiguously demonstrate that ZrTe$_2$ is a topological semimetal. Also, a comparative band structure study is done on ZrSe$_2$ which shows a semiconducting nature of the electronic structure with an indirect band gap of 0.9 eV between $Γ(A) $ and $M (L)$ high symmetry points. In the below we show that the metal-chalcogen bond-length plays a critical role in the electronic phase transition from semiconductor to a topological semimetal ingoing from ZrSe$_2$ to ZrTe$_2$.

cond-mat.mtrl-sci↗

arXiv2018

Massive Dirac fermions in layered BaZnBi$_2$

Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) we study the electronic structure of layered BaZnBi$_2$. Our experimental results show no evidence of Dirac states in BaZnBi$_2$ originated either from the bulk or the surface. The calculated band structure without spin-orbit interaction shows several linear dispersive band crossing points throughout the Brillouin zone. However, as soon as the spin-orbit interaction is turned on, the band crossing points are significantly gapped out. The experimental observations are in good agreement with our DFT calculations. These observations suggest that the Dirac fermions in BaZnBi$_2$ are trivial and massive. We also observe experimentally that the electronic structure of BaZnBi$_2$ comprises of several linear dispersive bands in the vicinity of Fermi level dispersing to a wider range of binding energy.

cond-mat.mtrl-sci↗

arXiv2018

3D superconducting gap in FeSe from ARPES

We present a systematic angle-resolved photoemission spectroscopy study of the superconducting gap in FeSe. The gap function is determined in a full Brillouin zone including all Fermi surfaces and kz-dependence. We find significant anisotropy of the superconducting gap in all momentum directions. While the in-plane anisotropy can be explained by both, nematicity-induced pairing anisotropy and orbital-selective pairing, the kz-anisotropy requires additional refinement of theoretical approaches.

cond-mat.supr-con↗