arXiv subjects

S. Urazhdin

Publications and source records attributed to S. Urazhdin.

43 records · Page 3Linked to original sources

arXiv2003

Modifying the surface electronic properties of YBa2Cu3O7-delta with cryogenic scanning probe microscopy

We report the results of a cryogenic study of the modification of YBa2Cu3O7-delta surface electronic properties with the probe of a scanning tunneling microscope (STM). A negative voltage applied to the sample during STM tunneling is found to modify locally the conductance of the native degraded surface layer. When the degraded layer is removed by etching, the effect disappears. An additional surface effect is identified using Scanning Kelvin Probe Microscopy in combination with STM. We observe reversible surface charging for both etched and unetched samples, indicating the presence of a defect layer even on a surface never exposed to air.

cond-mat.supr-con↗

arXiv2003

Switching Current vs. Magnetoresistance in Magnetic Multilayer Nanopillars

We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving increased magnetoresistance. Second, we insert a spacer with a short spin-diffusion length between the magnetic layers, decreasing the magnetoresistance. Third, we vary the angle between layer magnetizations. In all cases, we find an approximately linear dependence between magnetoresistance and inverse switching current. We give a qualitative explanation for the observed behaviors, and suggest some ways in which the switching currents may be reduced.

cond-mat.mtrl-sci↗

arXiv2003

Current-Driven Magnetic Excitations in Permalloy-Based Multilayer Nanopillars

We study current-driven magnetization switching in nanofabricated Ni84Fe16/Cu/Ni84Fe16 trilayers at 295 K and 4.2 K. The shape of the hysteretic switching diagram at low magnetic field changes from 295 K to 4.2 K. The reversible behavior at higher field involves two phenomena, a threshold current for magnetic excitations closely correlated with the switching current, and a peak in differential resistance characterized by telegraph noise, with average period that decreases exponentially with current and shifts with temperature. We interpret both static and dynamic results at 295 K and 4.2 K in terms of thermal activation over a potential barrier, with a current dependent effective magnetic temperature.

cond-mat.mtrl-sci↗

arXiv2003

Effect of Interlayer Coupling on Current-Assisted Magnetization Switching in Nanopillars

We show that dipole-field induced antiferromagnetic coupling, or RKKY ferromagnetic coupling, between Co layers can strongly affect the low magnetic field switching behavior of Co/Cu/Co nanopillars. Whereas current-assisted switching at low fields in uncoupled nanopillars is always hysteretic, strong coupling of either kind can change the switching to non-hysteretic (reversible). These differences can be understood with a simple picture of current-assisted thermal activation over a barrier.

cond-mat.mtrl-sci↗

arXiv2003

Effect of Antiferromagnetic Interlayer Coupling on Current-Assisted Magnetization Switching

We compare magnetization switching in Co/Cu/Co nanopillars with uncoupled and dipole-field coupled Co layers. In uncoupled nanopillars, current-driven switching is hysteretic at low magnetic field H and changes to reversible, characterized by telegraph noise, at high H. We show that dipolar coupling both affects the switching current and causes the switching to become reversible at small H. The coupling thus changes the switching to reversible, hysteretic, and then reversible again as H increases. We describe our results in terms of current-assisted thermal activation.

cond-mat↗

arXiv2002

Scanning Tunneling Microscopy of Defect States in the Semiconductor Bi$_2$Se$_3$

Scanning tunneling spectroscopy images of Bi$_2$Se$_3$ doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model we show that the geometry of the defect states in Bi$_2$Se$_3$ can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.

cond-mat.mtrl-sci↗

arXiv2001

Phenomenological theory of phase transitions in highly piezoelectric perovskites

Recently discovered fine structure of the morphotropic phase boundaries in highly piezoelectric mixture compounds PZT, PMN-PT, and PZN-PT demonstrates the importance of highly non-linear interactions in these systems. We show that an adequate Landau-type description of the ferroelectric phase transitions in these compounds is achieved by the use of a twelfth-order expansion of the Landau potential in terms of the phenomenological order parameter. Group-theoretical and catastrophe-theory methods are used in constructing the appropriate Landau potential. A complete phase diagram is calculated in phenomenological parameter space. The theory describes both PZT and PZN-PT types of phase diagrams, including the newly found monoclinic and orthorhombic phases. Anomalously large piezoelectric coefficients are predicted in the vicinity of the phase transition lines.

cond-mat.mtrl-sci↗