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S. V. Ivanov

Publications and source records attributed to S. V. Ivanov.

At least 37 records · Page 2Linked to original sources
arXiv2012

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.

cond-mat.mes-hall↗
arXiv2011

Long-lived electron spin coherence in CdSe/ZnSSe self-assembled quantum dots

The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived spin coherence persisting up to 13 ns after spin orientation has been found in the n-doped quantum dots, outlasting significantly the lifetimes of charge neutral and negatively charged excitons of 350 - 530 ps. The electron spin dephasing time as long as 5.6 ns has been measured in a magnetic field of 0.25 T. Hyperfine interaction of resident electrons with a nuclear spin fluctuations is suggested as the main limiting factor for the dephasing time. The efficiency of this mechanism in II-VI and III-V quantum dots is analyzed.

cond-mat.mes-hall↗
arXiv2011

Identification of main contributions to conductivity of epitaxial InN

Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films.

cond-mat.mtrl-sci↗
arXiv2011

Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.

cond-mat.mes-hall↗
arXiv2010

Terahertz radiation due to random grating coupled surface plasmon polaritons

We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of surface plasmon polaritons supported by the accumulation layer to the THz emission. The principal emission band occupies the 2-6 THz spectral range. We establish a link between the shape of emission spectra and the structural factor of the random grating and show that the change of slope of power dependencies is characteristic for temperature-dependent plasmonic mechanisms. The super-linear rise of a THz emission intensity on applied electric power provides advantage of such materials in emission yield.

cond-mat.mtrl-sci↗
arXiv2009

On Dehn functions of infinite presentations of groups

We introduce two new types of Dehn functions of group presentations which seem more suitable (than the standard Dehn function) for infinite group presentations and prove the fundamental equivalence between the solvability of the word problem for a group presentation defined by a decidable set of defining words and the property of being computable for one of the newly introduced functions (this equivalence fails for the standard Dehn function). Elaborating on this equivalence and making use of this function, we obtain a characterization of finitely generated groups for which the word problem can be solved in nondeterministic polynomial time. We also give upper bounds for these functions, as well as for the standard Dehn function, for two well-known periodic groups one of which is an infinite 2-group of intermediate growth and the other is a free Burnside group of sufficiently large exponent.

math.GR↗
arXiv2008

InN/In nanocomposites: Evidences of plasmonic effects and hidden gap

InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.

cond-mat.mtrl-sci↗
arXiv2008

InN/In nanocomposites: Plasmonic effects and a hidden optical gap

InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.

cond-mat.mtrl-sci↗
arXiv2007

On the intersection of free subgroups in free products of groups

Let (G_i | i in I) be a family of groups, let F be a free group, and let G = F *(*I G_i), the free product of F and all the G_i. Let FF denote the set of all finitely generated subgroups H of G which have the property that, for each g in G and each i in I, H \cap G_i^{g} = {1}. By the Kurosh Subgroup Theorem, every element of FF is a free group. For each free group H, the reduced rank of H is defined as r(H) = max{rank(H) -1, 0} in \naturals \cup {\infty} \subseteq [0,\infty]. To avoid the vacuous case, we make the additional assumption that FF contains a non-cyclic group, and we define sigma := sup{r(H\cap K)/(r(H)r(K)) : H, K in FF and r(H)r(K) \ne 0}, sigma in [1,\infty]. We are interested in precise bounds for sigma. In the special case where I is empty, Hanna Neumann proved that sigma in [1,2], and conjectured that sigma = 1; almost fifty years later, this interval has not been reduced. With the understanding that \infty/(\infty -2) = 1, we define theta := max{|L|/(|L|-2) : L is a subgroup of G and |L| > 2}, theta in [1,3]. Generalizing Hanna Neumann's theorem, we prove that sigma in [theta, 2 theta], and, moreover, sigma = 2 theta if G has 2-torsion. Since sigma is finite, FF is closed under finite intersections. Generalizing Hanna Neumann's conjecture, we conjecture that sigma = theta whenever G does not have 2-torsion.

math.GR↗
arXiv2006

Spin physics with light and heavy neutral mesons at Protvino

PROZA-M experiment results as well the proposal of a new spin program with the use of a polarized proton beam are presented. Significant asymmetries were observed in inclusive $π^0$ production. The new program proposes to study a wealth of single- and double-spin observables in various reactions using longitudinally and transversely polarized proton beams at U70. The main goal is to define gluon contribution to nucleon spin by measuring double-spin asymmetry in charmonium production.

hep-ex↗
arXiv2005

Spin physics program in the U70 polarized proton beam

A possibility to accelerate a high intensity polarized proton beam up to 70 GeV at the IHEP accelerator, extract it from the main ring and deliver to several experimental setups is being studied now. We propose to study a wealth of single- and double-spin observables in various reactions using longitudinally and transverserly polarized proton beams at U70. The proposed measurements can be done at the existing detectors as well as require to create a few new experimental setups at U70.

hep-ex↗
arXiv2004

Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well

We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitating penetration of the electron wave function from the diluted magnetic semiconductor ZnCdMnSe QW into the nonmagnetic GaAs QW and vice versa. Magneto-photoluminescence studies demonstrate level anticrossing and strong intermixing resulting in a drastic renormalization of the electron effective g factor, in perfect agreement with the energy level calculations.

cond-mat.mtrl-sci↗
arXiv2003

Non-hopfian relatively free groups

To solve problems of Gilbert Baumslag and Hanna Neumann, posed in the 1960's, we construct a nontrivial variety of groups all of whose noncyclic free groups are non-hopfian.

math.GR↗
arXiv2003

On varieties of groups in which all periodic groups are abelian

To solve a number of problems on varieties of groups, stated by Kleiman, Kuznetsov, Ol'shanskii, Shmel'kin in the 1970's and 1980's, we construct continuously many varieties of groups in which all periodic groups are abelian and whose pairwise intersections are the variety of all abelian groups.

math.GR↗
arXiv2003

On identities in groups of fractions of cancellative semigroups

To solve two problems of Bergman stated in 1981, we construct a group $G$ such that $G$ contains a free noncyclic subgroup (hence, $G$ satisfies no group identity) and $G$, as a group, is generated by its subsemigroup that satisfies a nontrivial semigroup identity.

math.GR↗
arXiv2003

Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.

cond-mat.mtrl-sci↗
arXiv2003

Mie-resonances, infrared emission and band gap of InN

Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises from In aggregates, and is likely associated with surface states at the metal/InN interfaces.

cond-mat.mtrl-sci↗